ADVANCED APT6035SVR POWER TECHNOLOGY 600V 18A 0.3500 POWER MOS vV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching * 100% Avalanche Tested D Lower Leakage * Surface Mount D*PAK Package G i) MAXIMUM RATINGS All Ratings: Tg = 25C unless otherwise specified. Symbol | Parameter APT6035SVR UNIT Voss Drain-Source Voltage 600 Volts Ib Continuous Drain Current @ Tg = 25C 18 @) Amps lom Pulsed Drain Current 72 Vas Gate-Source Voltage Continuous +30 Vol olts Vesm Gate-Source Voltage Transient +40 p Total Power Dissipation @ Tc, = 25C 280 Watts p Linear Derating Factor 2.24 wc TT stg | Operating and Storage Junction Temperature Range -55 to 150 C Ty, Lead Temperature: 0.063" from Case for 10 Sec. 300 laR Avalanche Current (Repetitive and Non-Repetitive) 18 Amps Ear Repetitive Avalanche Energy O 30 J m Eas Single Pulse Avalanche Energy 1210 STATIC ELECTRICAL CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT BVgg | Drain-Source Breakdown Voltage (V,. = OV, |, = 250A) 600 Volts lb(on) On State Drain Current @ (Vig > | (on) X Rosion) Max, Vas = 10V) 18 Amps Roscon) Drain-Source On-State Resistance @ (Vos = 10V, 0.5 | prcont?) 0.350 | Ohms Zero Gate Voltage Drain Current (Vos = Vase? Vos = 0V) 95 Dss - = HA Zero Gate Voltage Drain Current (V). = 0.8 Vigg,s Vag = OV, T, = 125C) 250 lass Gate-Source Leakage Current (Vos = +30V, Vos = 0V) +100 nA Vesith) Gate Threshold Voltage (Vig = Vas? Ly = 1.0mA) 2 4 Volts Was CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA ( APT Website - htip:/www.advancedpower.com } 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadra Nord F-33700 Merignac - France Phone: (33) 557921515 FAX: (33) 5 56 47 97 61 050-5530 Rev A050-5530 Rev A DYNAMIC CHARACTERISTICS APT6035SVR Symbol | Characteristic Test Conditions MIN TYP MAX UNIT Co. Input Capacitance Vg = OV 3450 | 4140 C..5 | Output Capacitance Vog = 25V 403 565 pF C., | Reverse Transfer Capacitance f= 1 MHz 155 235 Q, Total Gate Charge @ Vas = 10V 140 210 Qs Gate-Source Charge Vop = 9-5 Vigs 19 30 nc Qo Gate-Drain ("Miller") Charge lb = loicont] @ 25C 68 100 ton) | Turn-on Delay Time Veg = 15V 12 24 t Rise Time Vp = 9-5 Vigs 12 24 ; l= @ 25C ns tyoty | Turn-off Delay Time b= 'piCont] 40 60 t, Fall Time Rg = 1.62 8 16 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol | Characteristic / Test Conditions MIN TYP MAX UNIT Is Continuous Source Current (Body Diode) 18 A mps lon Pulsed Source Current (Body Diode) 72 P Vsp Diode Forward Voltage @ (Vag = OV, Is = lotcont) 1.3 Volts t. Reverse Recovery Time (I, = lorconty dl/dt = 100A/us) 450 ns tr Reverse Recovery Charge (I, = lorcontp dl./dt = 100A/ps) 8 uC THERMAL CHARACTERISTICS Symbol | Characteristic MIN TYP MAX UNIT Rojc | Junction to Case 0.45 C/W Roja | Junction to Ambient 40 @ Repetitive Rating: Pulse width limited by maximum junction Pp 9g y J temperature. Pulse Test: Pulse width < 380 nS, Duty Cycle < 2% @ See MIL-STD-750 Method 3471 @ Starting T = +25C, L = 7.47mH, Rg = 259, Peak |, = 18A APT Reserves the right to change, without notice, the specifications and information contained herein. 0.5 = l 0.1 o Zz <= 0.05 a Ww a = ol S 2 0.01 lu = 0.005 SINGLE PULSE & 3 N 0.001 10% to 108 = ec ty > | Duty Factor D = itp Peak Ty =PpmxZojot+Teo 102 107 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATIONIp DRAIN CURRENT (AMPERES) Ip DRAIN CURRENT (AMPERES) Ip, DRAIN CURRENT (AMPERES) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) APT6035SVR 50 Vagge7V, 10V & 15V 40 30 20 5V 4.5V 0 0 50 100 150 200 250 300 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 50 Vpg> !p (ON) x Rpg (ON)MAX. 40 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE 30 20 Ty =+125C Ty = +25C Ty = -55C 0 2 4 6 8 Vag: GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 20 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) 2.5 2.0 15 1.0 0.5 0.0 0 -25 O 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 50 Vag=10V & 15V wo Oo Nm oO 5V Ip DRAIN CURRENT (AMPERES) 3 4.5V 0 0 5 10 15 20 25 Vpg: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS 1.4 Ty = 25C 250SEC. PULSE TEST @<0.5 % DUTY CYCLE NORMALIZED TO Veg = 10V @ 05 Ip [Cont] wo to a ua o Rpg(ON), DRAIN-TO-SOURCE ON RESISTANCE 9 io 10 20 30 Ip, DRAIN CURRENT (AMPERES) FIGURE 5, R,,(ON) vs DRAIN CURRENT a ua on a oa Oo 1.05 BV gg, DRAIN-TO-SOURCE BREAKDOWN VOLTAGE (NORMALIZED) 0.90 0 -25 0 25 50 75 100 125 150 Ty, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 1.2 a ua 1.0 0.9 0.8 0.7 Veg(TH), THRESHOLD VOLTAGE (NORMALIZED) 0.6 0 -25 0 25 50 75 100 125 150 Tg, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 050-5530 Rev A050-5530 Rev A APT6035SVR 100 15,000 10pS _~ 50 OPERATION HERE 10,000 P LIMITED BY Rog 100nS x _ 5,000 oo WL 2 10 & < 1mS WW 5 5 Zz a = om o 10mS g 1,000 3 a. 2 ' 100ms Oo 800 bs To =+25C Oo GOS HT 4150C DC 4 SINGLE PU 0.1 100 4 5 10 50 100 600 01 A 4 10 50 Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) Vos: DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE = 20 a 100 2 Ip = Ip [Cont] & ; i Q Vpg=120V a 50 ~ 46 z Oo V = = 5 5 i g 12 ff Ty =+150C Ww 2 9 10 x zZ 5 8 < # a 5 8 . Ww cc E 4 wi 5 a o c n ~ G fia > 0 a 4 0 50 100 150 200 250 300 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Qg, TOTAL GATE CHARGE (nC) Vep: SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE DPAK Package Outline = 4.98 (.196) 15.95 (.628 13.41 (.528 2 <P 8.08 (200) < 138 | } <1351 | wo <- 1.47 (.058) cn | 1.87 (.062) ao 6x NI 453) 457) 46 (.018 6 { O23) {8 Ples} 20 (.001) 78 (.007) 7 (.105) 84 (.112) 1.22 (.048) 1.32 (.052) Heat Sink (Drain) 5.45 (.215) BSC and Leads {2 Ples.} are Plated Source Drain Gate Dimensions in Millimeters (Inches) APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058