BUZ 101SL SIPMOS Power Transistor Features Product Summary * N channel Drain source voltage VDS * Drain-Source on-state resistance RDS(on) Continuous drain current ID Enhancement mode * Avalanche rated 55 V 0.04 20 A * Logic Level * dv/dt rated * 175C operating temperature Type Package Ordering Code Packaging BUZ101SL P-TO220-3-1 Q67040-S4012-A2 Tube BUZ101SL E3045A P-TO263-3-2 Q67040-S4012-A6 Tape and Reel BUZ101SL E3045 P-TO263-3-2 Q67040-S4012-A5 Tube Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 C 20 TC = 100 C 14 Pulsed drain current Unit IDpulse 80 EAS 90 Avalanche energy, periodic limited by Tjmax EAR 5.5 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS 20 V Power dissipation Ptot 55 W -55... +175 C TC = 25 C Avalanche energy, single pulse mJ ID = 20 A, VDD = 25 V, RGS = 25 kV/s IS = 20 A, VDS = 40 V, di/dt = 200 A/s, Tjmax = 175 C TC = 25 C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Data Sheet 55/175/56 1 05.99 BUZ 101SL Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 2.7 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area1) - - 40 K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)DSS 55 - - Gate threshold voltage, VGS = VDS ID = 40 A VGS(th) 1.2 1.6 2 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA A VDS = 50 V, VGS = 0 V, T j = 25 C - 0.1 1 VDS = 50 V, VGS = 0 V, T j = 150 C - - 100 - 10 100 Gate-source leakage current I GSS nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 4.5 V, ID = 14 A - 0.057 0.07 VGS = 10 V, ID = 14 A - 0.034 0.04 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Data Sheet 2 05.99 BUZ 101SL Electrical Characteristics, at Tj = 25 C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. g fs 7 14 - S Ciss - 560 700 pF Coss - 170 215 Crss - 95 120 t d(on) - 15 25 tr - 35 55 t d(off) - 15 25 tf - 15 25 Dynamic Characteristics Transconductance VDS2*ID*RDS(on)max , ID = 14 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time ns VDD = 30 V, V GS = 4.5 V, ID = 20 A, RG = 10 Rise time VDD = 30 V, V GS = 4.5 V, ID = 20 A, RG = 10 Turn-off delay time VDD = 30 V, V GS = 4.5 V, ID = 20 A, RG = 10 Fall time VDD = 30 V, V GS = 4.5 V, ID = 20 A, RG = 10 Data Sheet 3 05.99 BUZ 101SL Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 3 4.5 Q gd - 10 15 Qg - 24 36 V(plateau) - 4.06 - V IS - - 20 A I SM - - 80 VSD - 1.12 1.8 V t rr - 50 75 ns Q rr - 0.12 0.18 C Dynamic Characteristics Gate to source charge nC VDD = 40 V, ID = 20 A Gate to drain charge VDD = 40 V, ID = 20 A Gate charge total VDD = 40 V, ID = 20 A, VGS = 0 to 10 V Gate plateau voltage VDD = 40 V, ID = 20 A Reverse Diode Inverse diode continuous forward current TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage VGS = 0 V, I F = 40 A Reverse recovery time VR = 30 V, IF=IS , diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=l S , diF/dt = 100 A/s Data Sheet 4 05.99 BUZ 101SL Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS 10 V BUZ101SL BUZ101SL 60 22 W A 50 18 16 40 ID Ptot 45 35 14 12 30 10 25 8 20 6 15 10 4 5 2 0 0 20 40 60 80 0 0 100 120 140 160 C 190 20 40 60 80 100 120 140 160 C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 C parameter : D = tp /T 10 2 BUZ101SL 10 1 tp = 28.0s BUZ101SL K/W 10 0 A Z thJC 10 -1 /I D ID 100 s =V DS 10 1 DS (on ) D = 0.50 0.20 R 10 -2 0.10 1 ms 0.05 0.02 10 -3 0.01 10 ms 10 0 -1 10 10 0 10 1 DC V 10 single pulse 10 -4 -7 10 2 VDS Data Sheet 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 05.99 BUZ 101SL Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 s parameter: V GS BUZ101SL 50 BUZ101SL Ptot = 55W 0.24 A k j i h 40 b 3.0 c 3.5 f d 4.0 e 4.5 f 5.0 g 5.5 35 ID b VGS [V] g a 2.5 30 25 e 20 d 15 10 h 6.0 i 6.5 j 7.0 k 8.0 l 10.0 c d e f 0.20 0.18 RDS(on) l 0.16 0.14 0.12 0.10 0.08 0.06 c g h i j k l 0.04 5 VGS [V] = b 0.02 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.00 0 VDS b 3.0 c 3.5 4 d 4.0 8 e f 4.5 5.0 12 g 5.5 16 h i 6.0 6.5 20 24 j 7.0 k l 8.0 10.0 A 28 36 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 s VDS 2 x I D x RDS(on)max gfs = f(ID ); Tj = 25C parameter: gfs 50 20 A gfs ID S 30 10 20 5 10 0 1 2 3 4 V 0 0 6 VGS Data Sheet 5 10 15 20 A 30 ID 6 05.99 BUZ 101SL Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 40 A parameter : ID = 14 A, VGS = 4.5 V BUZ101SL 3.0 V 0.26 0.22 2.4 VGS(th) RDS(on) 0.20 0.18 0.16 2.2 2.0 1.8 1.6 0.14 1.4 0.12 1.2 98% 0.10 1.0 typ 0.08 0.06 0.6 0.04 0.4 typ 0.2 0.02 0.00 -60 max 0.8 min 0.0 -60 -20 20 60 100 140 C -20 20 60 100 140 200 C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 s 10 4 10 2 pF BUZ101SL A 10 3 10 1 IF C Ciss Coss 10 2 10 0 Crss Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 10 20 V 10 -1 0.0 40 VDS Data Sheet 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 05.99 BUZ 101SL Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 20 A, V DD = 25 V RGS = 25 VGS = f (QGate ) parameter: ID puls = 20 A BUZ101SL 100 16 mJ V 80 12 VGS EAS 70 60 50 10 8 0,2 VDS max 40 0,8 VDS max 6 30 4 20 2 10 0 20 40 60 80 100 120 140 C 0 0 180 Tj 4 8 12 16 20 24 28 nC 36 Q Gate Drain-source breakdown voltage V(BR)DSS = f (Tj) BUZ101SL 66 V V(BR)DSS 64 62 60 58 56 54 52 50 -60 -20 20 60 100 140 C 200 Tj Data Sheet 8 05.99