BRT21, BRT22, BRT23
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Rev. 1.8, 02-Dec-11 1Document Number: 83690
For technical questions, contact: optocoupleranswers@vishay.com
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Optocoupler, Phototriac Output, Zero Crossing
DESCRIPTION
The BRT21, BRT22, BRT23 product family consists of AC
switch optocouplers with zero voltage detectors with two
electrically insulated lateral power ICs which integrate a
thyrister system, a photo detector and noise suppression at
the output and an IR GaAs diode input.
High input sensitivity is achieved by using an emitter
follower phototransistor and a SCR predriver resulting in an
LED trigger current of less than 2 mA or 3 mA (DC). Inverse
parallel SCRs provide commutating dV/dt greater than
10 kV/μs.
The zero cross line voltage detection circuit consists of two
MOSFETS and a photodiode.
The BRT21, BRT22, BRT23 product family isolates
low-voltage logic from 120, 230, and 380 VAC lines to
control resistive, inductive or capacitive loads including
motors, solenoids, high current thyristers or TRIAC and
relays.
FEATURES
High input sensitivity IFT = 1 mA
•I
TRMS = 300 mA
High static dV/dt 10 000 V/μs
Electrically insulated between input and output
circuit
Microcomputer compatible
Trigger current
- (IFT < 1.2 mA) BRT22F, BRT23F,
- (IFT < 2 mA) BRT21H, BRT22H, BRT23H
- (IFT < 3 mA) BRT21M, BRT22M, BRT23M
Available surface mount and on on tape and reel
Zero voltage crossing detector
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
Industrial controls
Office equipment
Consumer appliances
AGENCY APPROVALS
UL file no. E52744 system code H
DIN EN 60747-5-2 (VDE 0844)/DIN EN 60747-5-5
(pending) available with option 1
•CQC
i179030_3
1
2
3
6
5
4
MT2
MT1
NC
A
C
NC
*Zero crossing circuit
ZCC*
V
DE
i179004-10
ORDERING INFORMATION
BRT2#x-X0##T
PART NUMBER PACKAGE OPTION TAPE
AND
REEL
AGENCY
CERTIFIED/PACKAGE
VDRM (V)
400 600 800
UL IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA
DIP-6 BRT21H BRT21M BRT22F BRT22H BRT22M BRT23F BRT23H BRT23M
DIP-6, 400 mil, option 6 - - BRT22F-
X006 --
BRT23F-
X006
BRT23H-
X006 -
SMD-6, option 7 BRT21H-
X007 -BRT22F-
X007T (1)
BRT22H-
X007T (1) -BRT23F-
X007T (1)
BRT23H-
X007T (1)
BRT23M-
X007T
SMD-6, option 9 - - BRT22F-
X009T (1) --
BRT23F-
X009T --
> 0.1 mm
10.16 mm
> 0.7 mm
7.62 mm
DIP-6
Option 7
Option 6
Option 9
9.27 mm
Option 8
BRT21, BRT22, BRT23
www.vishay.com Vishay Semiconductors
Rev. 1.8, 02-Dec-11 2Document Number: 83690
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Also available in tube, do not put T on the end.
Notes
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
UL, VDE IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA IFT = 1.2 mA IFT = 2 mA IFT = 3 mA
DIP-6 - - BRT22F-
X001
BRT22H-
X001 --
BRT23H-
X001 -
DIP-6, option 6 BRT21H-
X016
BRT21M-
X016
BRT22F-
X016
BRT22H-
X016
BRT22M-
X016 -BRT22H-
X016
BRT23M-
X016
SMD-6, option 7 - - BRT22F-
X017T
BRT22H-
X017 ----
SMD-6, option 8 - - - - - - BRT23H-
X018T -
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
INPUT
Reverse voltage IR = 10 μA VR6V
Forward current IF60 mA
Surge current IFSM 2.5 A
Power dissipation Pdiss 100 mW
Derate from 25 °C 1.33 mW/°C
OUTPUT
Peak off-state voltage
BRT21 VDRM 400 V
BRT22 VDRM 600 V
BRT23 VDRM 800 V
On state RMS current ITRM 300 mA
Single cycle surge current 3A
Power dissipation Pdiss 600 mW
Derate from 25 °C 6.6 mW/°C
COUPLER
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
t = 1 s VISO 5300 VRMS
Pollution degree (DIN VDE 0109) 2
Creepage distance 7mm
Clearance distance 7mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
CTI 175
Isolation resistance VIO = 500 V, Tamb = 25 °C RIO 1012 Ω
VIO = 500 V, Tamb = 100 °C RIO 1011 Ω
Storage temperature range Tstg - 40 to + 150 °C
Ambient temperature range Tamb - 40 to + 100 °C
Soldering temperature (1) max. 10 s dip soldering
0.5 mm from case bottom Tsld 260 °C
AGENCY
CERTIFIED/PACKAGE
VDRM (V)
400 600 800
BRT21, BRT22, BRT23
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Rev. 1.8, 02-Dec-11 3Document Number: 83690
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Note
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage IF = 10 mA VF1.16 1.35 V
Reverse current VR = 6 V IR0.1 10 μA
Capacitance f = 1 MHz, VF = 0 V CO25 pF
Thermal resistance, junction to
ambient RthJA 750 K/W
OUTPUT
Peak off-state voltage ID(RMS) = 100 μA
BRT21
VDM
400
VBRT22 600
BRT23 800
Off-state current VD = VDRM, Tamb = 100 °C,
IF = 0 mA ID(RMS) 10 100 μA
On-state voltage IT = 300 mA VTM 1.7 3 V
On-state current PF = 1, VT(RMS) = 1.7 V ITM 300 mA
Surge (non-repetitive),
on-state current f = 50 Hz ITSM 3A
Trigger current temp. gradient
ΔIFT1/ΔTj714μA/K
ΔIFT2/ΔTj714μA/K
Inhibit voltage temp. gradient ΔVDINH/ΔT
j- 20 mV/K
Off-state current in inhibit state IF = IFT1, VDRM IDINH 50 200 μA
Holding current IH65 500 μA
Latching current VT = 2.2 V IL5mA
Zero cross inhibit voltage IF = rated IFT VIH 15 25 V
Turn-on time VRM = VDM = VD(RMS) ton 35 μs
Turn-off time PF = 1, IT = 300 mA toff 50 μs
Critical rate of rise of off-state
voltage
VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10 000 V/μs
VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5000 V/μs
Critical rate of rise of voltage at
current commutation
VD = 230 VRMS,
ID = 300 mARMS, Tj = 25 °C dV/dtcrq 8V/μs
VD = 230 VRMS,
ID = 300 mARMS, Tj = 85 °C dV/dtcrq 7V/μs
Critical rate of rise of on-state at
current commutation
VD = 230 VRMS,
ID = 300 mARMS, Tj = 25 °C dI/dtcrq 12 A/ms
Thermal resistance, junction to
ambient RthJA 125 K/W
COUPLER
Critical rate of rise of coupled
input/output voltage IT = 0 A, VRM = VDM = VD(RMS) dVIO/dt 10 000 V/μs
Common mode coupling
capacitance CCM 0.01 pF
Capacitance (input to output) f = 1 MHz, VIO = 0 V CIO 0.8 pF
Isolation resistance VIO = 500 V, Tamb = 25 °C Ris 1012 Ω
VIO = 500 V, Tamb = 100 °C Ris 1011 Ω
Trigger current
VD = 5 V, F - versions IFT 1.2 mA
VD = 5 V, H - versions IFT 2mA
VD = 5 V, M - versions IFT 3mA
BRT21, BRT22, BRT23
www.vishay.com Vishay Semiconductors
Rev. 1.8, 02-Dec-11 4Document Number: 83690
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
As per IEC 60747-5-2, § 7.4.3.8.1, this optocoupler is suitable for “safe electrical insulation” only within the safety ratings. Compliance with
the safety ratings shall be ensured by means of protective circuits.
POWER FACTOR CONSIDERATIONS
A snubber is not needed to eliminate false operation of the
TRIAC driver because of the high static and commutating
dV/dt with loads between 1.0 and 0.8 power factors. When
inductive loads with power factors less than 0.8 are being
driven, include a RC snubber or a single capacitor directly
across the device to damp the peak commutating dV/dt
spike. Normally a commutating dV/dt causes a turning-off
device to stay on due to the stored energy remaining in the
turning-off device.
But in the case of a zero voltage crossing optotriac, the
commutating dV/dt spikes can inhibit one half of the TRIAC
from turning on. If the spike potential exceeds the inhibit
voltage of the zero cross detection circuit, half of the TRIAC
will be heldoff and not turn-on. This hold-off condition can
be eliminated by using a snubber or capacitor placed
directly across the optotriac as shown in figure 1. Note that
the value of the capacitor increases as a function of the load
current.
The hold-off condition also can be eliminated by providing a
higher level of LED drive current. The higher LED drive
provides a larger photocurrent which causes the
phototransistor to turn-on before the commutating spike
has activated the zero cross network. Figure 2 shows the
relationship of the LED drive for power factors of less than
1.0. The curve shows that if a device requires 1.5 mA for a
resistive load, then 1.8 times 2.7 mA) that amount would be
required to control an inductive load whose power factor is
less than 0.3.
Fig. 1 - Shunt Capacitance vs. Load Current
SAFETY AND INSULATION RATINGS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Climatic classification
(according to IEC 68 part 1) 40/100/21
Comparative tracking index CTI 175 399
VIOTM 6000 V
VIORM 630 V
PSO 200 mW
ISI 400 mA
TSI 175 °C
Creepage distance standard DIP-6 7 mm
Clearance distance standard DIP-6 7 mm
Creepage distance 400 mil DIP-6 8 mm
Clearance distance 400 mil DIP-6 8 mm
iil410_01
400350300250200150100500
0.001
0.01
0.1
1
IL - Load Current (mARMS)
C
s
- Shunt Capacitance (µF)
Cs (µF) = 0.0032 (µF)*10^0.0066 IL (mA)
TA = 25 °C, PF = 0.3
IF = 2.0 mA
BRT21, BRT22, BRT23
www.vishay.com Vishay Semiconductors
Rev. 1.8, 02-Dec-11 5Document Number: 83690
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 2 - Normalized LED Trigger Current vs. Power Factor
Fig. 3 - Forward Voltage vs. Forward Current
Fig. 4 - Peak LED Current vs. Duty Factor, τ
Fig. 5 - Maximum LED Power Dissipation
Fig. 6 - Typical Output Characteristics
Fig. 7 - Current Reduction
iil410_02
1.21.00.80.60.40.20.0
0.8
1.0
1.2
1.4
1.6
1.8
2.0
PF - Power Factor
NIFth - Normalized LED
Trigger Current
IFth Normalized to IFth at PF = 1.0
TA = 25 °C
iil410_03
1001010.1
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
IF - Forward Current (mA)
VF - Forward Voltage (V)
TA = - 55 °C
TA = 25 °C
TA = 85 °C
iil410_04
10-6 10-5 10-4 10-3 10-2 10-1 100101
10
100
1000
10 000
t - LED Pulse Duration (s)
If(pk) - Peak LED Current (mA)
0.005
0.05
0.02
0.01
0.1
0.2
0.5
Duty Factor
t
τ
DF = /t
τ
iil410_05
100806040200- 20- 40- 60
0
50
100
150
TA - Ambient Temperature (°C)
LED - LED Power (mW)
103
102
101
5
5
5
100
012 43
iil410_06
IT = f(VT),
Parameter: Tj
Tj = 25 °C
100 °C
IT (mA)
VT (V)
400
300
200
100
0
0 20 40 60 80 100
iil410_07
I
TRMS
(mA)
T
A
(°C)
I
TRMS
= f(VT),
R
thJA
= 150 K/W
Device switch
soldered in pcb
or base plate.
BRT21, BRT22, BRT23
www.vishay.com Vishay Semiconductors
Rev. 1.8, 02-Dec-11 6Document Number: 83690
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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Fig. 8 - Current Reduction
Fig. 9 - Typical Trigger Delay Time
Fig. 10 - Typical Inhibit Current
Fig. 11 - Power Dissipation 40 Hz to 60 Hz Line Operation
Fig. 12 - Typical Static Inhibit Voltage Limit
Fig. 13 - Apply a Capacitor to the Supply Pins at the Load-Side
400
300
200
100
0
50 60 70 80 90 100
iil410_08
ITRMS (mA)
TPIN5 (°C)
ITRMS = f(TPIN5), RthJ-PIN5 = 16.5 K/W
Thermocouple measurement must
be performed potentially separated
to A1 and A2. Measuring junction
as near as possible at the case.
iil410_09
tgd = f (IF/IFT 25 °C), VD = 200 V
f = 40 to 60 Hz, Parameter: Tj
103
102
101
5
fgd (µs)
10051015102
IF/IFT25 °C
Tj = 25 °C
100 °C
0.6
0.4
0.5
0.3
0.2
0.1
0
0 100 200 300
iil410_11
Ptot (W)
ITRMS (mA)
40 to 60 Hz
Line operation,
Ptot = f(ITRMS)
12
10
8
6
4
1005510
2
101
iil410_12
V
V
DINH min.
(V)
I
F
/I
FT25 °C
VDINH min = f (IF/IFT25°C),
parameter: Tj
Device zero voltage
switch can be triggered
only in hatched are
below Tj curves.
Tj = 25 °C
100 °C
iil410_13
0.1 µF 220 V~
1
2
3
6
5
4
BRT21, BRT22, BRT23
www.vishay.com Vishay Semiconductors
Rev. 1.8, 02-Dec-11 7Document Number: 83690
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 14 - Connect a Series Resistor to the Output and Bridge
Both by a Capacitor Fig. 15 - Connect a Choke of Low Winding Cap. in Series,
e.g., a Ringcore Choke, with Higher Load Currents
TECHNICAL INFORMATION
See Application Note for additional information.
PACKAGE DIMENSIONS in millimeters
PACKAGE MARKING (example)
Note
Basic product marking only, refer to option information document number 83713 for option marking
iil410_14
22 nF 220 V~
2
1
3
5
6
4
33 Ω
iil410_15
22 nF 220 V~
1
2
3
5
4
6
500 µH
20802-40
Option 6 Option 7 Option 8 Option 9
10.16 typ.
7.62 typ.
8 min.
7.62 typ.
4.3 ± 0.3
0.6 min.
10.3 max.
0.7 min.
7.62 typ.
12.1 max.
9.27 min.
10.3 max.
7.62 typ.
8 min.0.6 min.
0.1 ± 0.1 3.6 ± 0.3
3.5 ± 0.3
2.55 ± 0.25
0.1 min.
0.25 ± 0.1
3.5 ± 0.3
0.765 ± 0.255
7.62 ref.
9.78 ± 0.25
0.30 typ.
0.1755 ± 0.0735
15° max.
6.4 ± 0.1
8.6 ± 0.1
pin one ID
6
5
4
12
3
ISO method A
3.555 ± 0.255
0.84 typ.
2.54 typ.
1 min.
0.485 ± 0.025
1.27 ± 0.05
4° typ.
17222
0.84 typ.
BRT22H
V YWW H 68
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Revision: 12-Mar-12 1Document Number: 91000
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