89 Pro-Electron Series VBE tsat) v v, v 1 bre VE (sat) I Cob tote | NF Type Case cBO CEO EBO cBO oy tke) * fl Vee sat} Vg toni* ic 0 Ie | to Test Process No. Style (vi v) wi | ina) @ (CB | Melt @ Cg tw ww Star | (oF! | IMH2) @ iy] ms) | (48) | Condition | No. Min Min Min Max Min Max Max Min Max Max Min Max Max | Max BSY53 TOs 78 30 7 10 60 | 20 01 10 06 13. 150} 9 150 50 20 35 10 10 2.0 500 40 120 150 10 20 500 10 Bsysa TOS 75 30 ? 10 60 | 35 0.1 10 0.6 13 150{ 9 150 50 20 75 10 10 2.0 500 100 300 150 10 40 500 10 BSY95A 10-18 20 15 5 50 16 | 30 1 0.35} 035 067 087 10 | 6 200 10 21 50 200 10 0.35 Test Conditions: 1. Ic = 200A, Voce = 5V. 4, Ic = 20uA, Voge = 5V, 7. We = 50 uA, VcE = SV, 10. I = 104A. Veg = BV. 43. Ig = 10 mA, Igy = 3 mA, 16. [ = 150 mA, VcE = BV. 19. Veg = 20V, Ic = 100 mA Rg = 2k, f = 1 kHz, BW = 200 Hz 2. ig = 200 uA, Voce = SV, Rg = 2k. WB 3. Ig = 304A, Vee = SV, Rg = 10k2. f= 1 kHz BW = 200 Hz Rg = 10k2, f = T kHz, BW = 150 Hz 5. Ie = 200uA, Vee = SV, Rg =2k2, f= 20 Hz to 15 kHz 6 Ic = 100 uA, Vee = BV, Ag = 2k, f= 10 H2 to 10 kHz Rg * 10 k82, BW = 10 Hz to 15 kHz 8. (C= 5OHA, Vee = 5V, Rg = 10k92, f= 1 kHz, BW = 200 Hz 9. i = 200 4A, Vee = 2V, Rg = 2kO. ET kHe, BW = 200 Hz 11 12. Rg = 102, WB Ig = 150 mA, Vcg = 10V, Igy = gg 215 mA Iq = 150 mA, Igy = Igo > +75 mA igg=tma 14, I = 100 mA, Igy = 40 mA, 1g2=20mA 18. Voc = 10V, Ic = 100 mA igi =igg = 10mA Igy = lpg = 1S mA 17. Ic = 10 MA, Igy = 1 mA, igg=-1ma 18. t = 300 MA, Igy = ipa = 30 MA, Vc = 26V (Bi = eg = 5 mA