AUTOMOTIVE GRADE AUIRLR3410 Features Advanced Planar Technology Low On-Resistance Logic Level Gate Drive Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * HEXFET(R) Power MOSFET VDSS RDS(on) AUIRLR3410 D-Pak 105m 17A D G S D-Pak AUIRLR3410 G Gate D Drain Standard Pack Form Quantity Tube 75 Tape and Reel Left 3000 Package Type max. ID Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. Base part number 100V S Source Orderable Part Number AUIRLR3410 AUIRLR3410TRL Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 17 ID @ TC = 100C IDM PD @TC = 25C Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation 12 60 79 VGS EAS IAR EAR dv/dt TJ TSTG Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Pead Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Symbol RJC RJA RJA Parameter Junction-to-Case Junction-to-Ambient ( PCB Mount) Junction-to-Ambient Max. Units A W 0.53 16 150 9.0 7.9 5.0 -55 to + 175 W/C V mJ A mJ V/ns C 300 Typ. Max. Units --- --- --- 1.9 50 110 C/W HEXFET(R) is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-10-29 AUIRLR3410 Static @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage Forward Trans conductance IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 100 --- --- V VGS = 0V, ID = 250A --- 0.122 --- V/C Reference to 25C, ID = 1mA --- --- 0.105 VGS = 10V, ID = 10A --- --- 0.125 VGS = 5.0V, ID = 10A --- --- 0.155 VGS = 4.0V, ID = 9.0A 1.0 --- 2.0 V VDS = VGS, ID = 250A 7.7 --- --- S VDS = 25V, ID = 9.0A --- --- 25 VDS = 100 V, VGS = 0V A --- --- 250 VDS = 80V,VGS = 0V,TJ =150C --- --- 100 VGS = 16V nA --- --- -100 VGS = -16V Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Qg Qgs Qgd td(on) tr td(off) tf Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time --- --- --- --- --- --- --- --- --- --- 7.2 53 30 26 34 4.8 20 --- --- --- --- LD Internal Drain Inductance --- 4.5 --- LS Internal Source Inductance --- 7.5 --- --- --- --- 800 160 90 --- --- --- Min. Typ. Max. Units --- --- 17 --- --- 60 --- --- --- --- 140 740 1.3 210 1100 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Diode Characteristics Parameter Continuous Source Current IS (Body Diode) Pulsed Source Current ISM (Body Diode) VSD Diode Forward Voltage Reverse Recovery Time trr Qrr Reverse Recovery Charge ton Forward Turn-On Time ID = 9.0A nC VDS = 80V VGS = 5.0V VDD = 50V ID = 9.0A ns RG = 6.0 VGS = 5.0V Between lead, 6mm (0.25in.) nH from package and center of die contact VGS = 0V pF VDS = 25V = 1.0MHz Conditions MOSFET symbol showing the A integral reverse p-n junction diode. V TJ = 25C,IS = 9.0A,VGS = 0V ns TJ = 25C ,IF = 9.0A nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11) VDD = 25V, starting TJ = 25C, L = 3.1mH, RG = 25, IAS = 9.0A, VGS =10V. (See fig. 12) ISD 9.0A, di/dt 540A/s, VDD V(BR)DSS, TJ 175C. Pulse width 300s; duty cycle 2%. Uses IRL530N data and test conditions. This is applied for LS of D-PAK is measured between lead and center of die contact. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 . R is measured at TJ approximately 90C. 2 2015-10-29 AUIRLR3410 100 100 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V ID , Drain-to-Source Current (A) ID , Drain-to-Source Current (A) 10 1 2.5V 20s PULSE WIDTH T J = 25C 0.1 0.1 1 10 10 2.5V 1 R DS(on) , Drain-to-Source On Resistance (Normalized) 3.0 I D , Drain-to-Source Current (A) TJ = 25C TJ = 175C 10 1 V DS = 50V 20s PULSE WIDTH 4 5 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig. 3 Typical Transfer Characteristics 3 10 A 100 Fig. 2 Typical Output Characteristics 100 3 1 VDS , Drain-to-Source Voltage (V) Fig. 1 Typical Output Characteristics 0.1 20s PULSE WIDTH T J = 175C 0.1 0.1 A 100 VDS , Drain-to-Source Voltage (V) 2 VGS 15V 12V 10V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V TOP TOP A I D = 15A 2.5 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig. 4 Normalized On-Resistance Vs. Temperature 2015-10-29 AUIRLR3410 1400 V GS , Gate-to-Source Voltage (V) 1200 C, Capacitance (pF) 15 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 1000 800 600 Coss 400 Crss 200 0 1 10 100 I D = 9.0A V DS = 80V V DS = 50V V DS = 20V 12 9 6 3 FOR TEST CIRCUIT SEE FIGURE 13 0 A 0 VDS , Drain-to-Source Voltage (V) 20 30 40 50 A Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 TJ = 175C 10 TJ = 25C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 VSD , Source-to-Drain Voltage (V) Fig. 7 Typical Source-to-Drain Diode Forward Voltage 4 A 1.4 100 10s 10 100s 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms 10 A 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 2015-10-29 AUIRLR3410 ID , Drain Current (A) 20 15 10 5 Fig 10a. Switching Time Test Circuit 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms Thermal Response (Z thJC) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.01 0.00001 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5 2015-10-29 AUIRLR3410 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V 0.01 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) 350 TOP 300 BOTTOM ID 3.7A 6.4A 9.0A 250 200 150 100 50 0 VDD = 25V 25 50 75 100 125 150 A 175 Starting TJ , Junction Temperature (C) V(BR)DSS tp Fig 12c. Maximum Avalanche Energy vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Id Vds Vgs Vgs(th) Qgs1 Qgs2 Qgd Qgodr Fig 13a. Gate Charge Waveform 6 Fig 13b. Gate Charge Test Circuit 2015-10-29 AUIRLR3410 Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs 7 2015-10-29 AUIRLR3410 D-Pak (TO-252AA) Package Outline (Dimensions are shown in millimeters (inches)) D-Pak (TO-252AA) Part Marking Information Part Number AUIRLR3410 YWWA IR Logo XX Date Code Y= Year WW= Work Week XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 2015-10-29 AUIRLR3410 D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TR TRR 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION TRL 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 2015-10-29 AUIRLR3410 Qualification Information Qualification Level Moisture Sensitivity Level Machine Model Human Body Model ESD Charged Device Model RoHS Compliant Automotive (per AEC-Q101) Comments: This part number(s) passed Automotive qualification. Infineon's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D-Pak MSL1 Class M4 AEC-Q101-002 Class H1C AEC-Q101-001 Class C5 AEC-Q101-005 Yes Highest passing voltage. Revision History Date 3/17/2014 10/29/2015 Comments Added "Logic Level Gate Drive" bullet in the features section on page 1. Updated data sheet with new IR corporate template. Updated datasheet with corporate template Corrected ordering table on page 1. Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer's compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer's products and any use of the product of Infineon Technologies in customer's applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer's technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies' products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 10 2015-10-29