AUIRLR3410
VDSS 100V
RDS(on) max. 105m
ID 17A
Features
Advanced Planar Technology
Low On-Resistance
Logic Level Gate Drive
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this Stripe Planar
design of HEXFET® Power MOSFETs utilizes the latest
processing techniques to achieve low on-resistance per silicon
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and
reliable device for use in Automotive and a wide variety of other
applications.
1 2015-10-29
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
AUTOMOTIVE GRADE
Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 17
A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 12
IDM Pulsed Drain Current 60
PD @TC = 25°C Maximum Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy (Thermally Limited) 150
mJ
IAR Avalanche Current 9.0 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Pead Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 1.9
°C/W
RJA Junction-to-Ambient ( PCB Mount) ––– 50
RJA Junction-to-Ambient ––– 110
D-Pak
AUIRLR3410
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
AUIRLR3410 D-Pak Tube 75 AUIRLR3410
Tape and Reel Left 3000 AUIRLR3410TRL
G D S
Gate Drain Source
S
G
D
HEXFET® Power MOSFET