MCR703A Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors PNPN devices designed for high volume, low cost consumer applications such as temperature, light and speed control; process and remote control; and warning systems where reliability of operation is critical. http://onsemi.com SCRs 4.0 AMPERES RMS 100 - 600 VOLTS Features * * * * * * * * * Small Size Passivated Die Surface for Reliability and Uniformity Low Level Triggering and Holding Characteristics Recommend Electrical Replacement for C106 Surface Mount Package - Case 369C To Obtain "DPAK" in Straight Lead Version (Shipped in Sleeves): Add '1' Suffix to Device Number, i.e., MCR706A1 Epoxy Meets UL 94 V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V Pb-Free Packages are Available Symbol Peak Repetitive Off-State Voltage (Note 1) (TC = -40 to +110C, Sine Wave, 50 to 60 Hz, MCR703A RGK = 1 k) MCR706A MCR708A VDRM, VRRM Peak Non-Repetitive Off-State Voltage (Sine Wave, 50 to 60 Hz, RGK = 1 k, TC = -40 to +110C) MCR703A MCR706A MCR708A VRSM On-State RMS Current (180 Conduction Angles; TC = 90C) IT(RMS) IT(AV) Non-Repetitive Surge Current (1/2 Sine Wave, 60 Hz, TJ = 110C) (1/2 Sine Wave, 1.5 ms, TJ = 110C) ITSM Forward Peak Gate Power (Pulse Width 1.0 sec, TC = 90C) Forward Average Gate Power (t = 8.3 msec, TC = 90C) Forward Peak Gate Current (Pulse Width 1.0 sec, TC = 90C) 4 Unit 3 V V 4.0 1 2 25 35 DPAK-3 CASE 369D STYLE 5 YWW CR 70xAG Y = Year WW = Work Week 70xA = Device Code x = 3, 6 or 8 G = Pb-Free Package A A YWW CR 70xAG 3 A 2.6 1.6 DPAK CASE 369C STYLE 5 4 100 400 600 150 450 650 Average On-State Current (180 Conduction Angles) TC = -40 to +90C TC = +100C Circuit Fusing (t = 8.3 msec) Max K MARKING DIAGRAMS 1 2 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating G A PIN ASSIGNMENT 1 Gate 2 Anode I2t 2.6 A2sec 3 Cathode PGM 0.5 W 4 Anode PG(AV) 0.1 W IGM 0.2 A Operating Junction Temperature Range TJ -40 to +110 C Storage Temperature Range Tstg -40 to +150 C ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. (c) Semiconductor Components Industries, LLC, 2009 March, 2009 - Rev. 11 1 Publication Order Number: MCR703A/D MCR703A Series THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction-to-Case Characteristic RJC 3.0 C/W Thermal Resistance, Junction-to-Ambient (Note 2) RJA 80 C/W TL 260 C Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds 2. Case 369C when surface mounted on minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Characteristic Min Typ Max - - - - 10 200 - - 2.2 - - 25 - 75 300 Unit OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM; RGK = 1 k) IDRM, IRRM TC = 25C TC = 110C A ON CHARACTERISTICS Peak Forward "On" Voltage (ITM = 8.2 A Peak, Pulse Width = 1 to 2 ms, 2% Duty Cycle) VTM Gate Trigger Current (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 ) TC = 25C TC = -40C IGT Gate Trigger Voltage (Continuous dc) (Note 3) (VAK = 12 Vdc, RL = 24 ) VGT - - - - 0.8 1.0 VGD 0.2 - - TC = 25C TC = -40C Gate Non-Trigger Voltage (Note 3) (VAK = 12 Vdc, RL = 100 , TC = 110C) Holding Current (VAK = 12 Vdc, RGK = 1 k) TC = 25C (Initiating Current = 20 mA) TC = -40C IH - - - - 5.0 10 V A V V mA Peak Reverse Gate Blocking Voltage (IGR = 10 A) VRGM 10 12.5 18 V Peak Reverse Gate Blocking Current (VGR = 10 V) IRGM - - 1.2 A tgt - 2.0 - s Critical Rate of Rise of Off-State Voltage (VD = Rated VDRM, RGK = 1 k, Exponential Waveform, TC = 110C) dv/dt - 10 - V/s Repetitive Critical Rate of Rise of On-State Current (Cf = 60 Hz, IPK = 30 A, PW = 100 s, diG/dt = 1 A/s) di/dt - - 100 A/s Total Turn-On Time (Source Voltage = 12 V, RS = 6 k) (ITM = 8.2 A, IGT = 2 mA, Rated VDRM) (Rise Time = 20 ns, Pulse Width = 10 s) DYNAMIC CHARACTERISTICS 3. RGK current not included in measurement. ORDERING INFORMATION Package Type Package Shipping MCR703AT4 DPAK 369C 2500 Tape & Reel MCR703AT4G DPAK 369C (Pb-Free) 2500 Tape & Reel MCR706AT4 DPAK 369C 2500 Tape & Reel MCR706AT4G DPAK 369C (Pb-Free) 2500 Tape & Reel MCR708A DPAK 369C 75 Units / Rail MCR708AG DPAK 369C (Pb-Free) 75 Units / Rail MCR708A1 DPAK-3 369D 75 Units / Rail MCR708A1G DPAK-3 369D (Pb-Free) 75 Units / Rail MCR708AT4 DPAK 369C 2500 Tape & Reel MCR708AT4G DPAK 369C (Pb-Free) 2500 Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MCR703A Series Voltage Current Characteristic of SCR + Current Symbol Parameter VDRM Peak Repetitive Off-State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off-State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On-State Voltage IH Holding Current Anode + VTM on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) IT, INSTANTANEOUS ON-STATE CURRENT (AMPS) 110 P(AV), AVERAGE POWER DISSIPATION (WATTS) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) Anode - 30 60 90 120 180 105 DC 100 95 0 1.0 2.0 3.0 120 3.0 90 60 30 2.0 1.0 0 0 1.0 2.0 3.0 4.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation r(t) , TRANSIENT RESISTANCE (NORMALIZED) Typical @ TJ = 25C Maximum @ TJ = 110C 10 Maximum @ TJ = 25C 1.0 0.1 1.0 DC 180 4.0 5.0 4.0 100 0.5 5.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1.0 ZJC(t) = RJC(t)*r(t) 0.1 0.01 0.1 1.0 10 100 1000 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response http://onsemi.com 3 5.0 10,000 MCR703A Series 1.0 VGT, GATE TRIGGER VOLTAGE (VOLTS) I GT, GATE TRIGGER CURRENT ( A) 35 30 25 20 15 -40 0 -20 0 20 40 60 80 100 110 -40 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature 2.0 2.0 IL , LATCHING CURRENT (mA) IH , HOLDING CURRENT (mA) 0.5 1.5 1.0 0.5 0 -40 -20 0 20 40 60 80 1.5 1.0 0.5 0 -40 100 110 -20 0 20 40 60 80 100 110 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Figure 7. Typical Holding Current versus Junction Temperature Figure 8. Typical Latching Current versus Junction Temperature http://onsemi.com 4 MCR703A Series PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE A C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE -T- E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M T STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- MCR703A Series PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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