STGW60V60DF, STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features TAB * Maximum junction temperature: TJ = 175 C * Tail-less switching off * VCE(sat) = 1.85 V (typ.) @ IC = 60 A * Tight parameters distribution 2 3 3 1 2 1 * Safe paralleling * Low thermal resistance * Very fast soft recovery antiparallel diode TO-247 TO-3P Applications Figure 1. Internal schematic diagram C (2 or TAB) * Photovoltaic inverters * Uninterruptible power supply * Welding * Power factor correction * Very high frequency converters Description G (1) This device is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the V series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. E (3) Table 1. Device summary Order code Marking Package Packaging STGW60V60DF GW60V60DF TO-247 Tube STGWT60V60DF GWT60V60DF TO-3P Tube October 2013 This is information on a product in full production. DocID024154 Rev 6 1/16 www.st.com 16 Electrical ratings 1 STGW60V60DF, STGWT60V60DF Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 600 V (1) A IC Continuous collector current at TC = 25 C IC Continuous collector current at TC = 100 C 60 A ICP(2) Pulsed collector current 240 A VGE Gate-emitter voltage 20 V (1) A 80 IF Continuous forward current at TC = 25 C IF Continuous forward current at TC = 100 C 60 A IFP(2) Pulsed forward current 240 A PTOT Total dissipation at TC = 25 C 375 W TSTG Storage temperature range - 55 to 150 C Operating junction temperature - 55 to 175 C Value Unit TJ 80 1. Current level is limited by bond wires 2. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol 2/16 Parameter RthJC Thermal resistance junction-case IGBT 0.4 C/W RthJC Thermal resistance junction-case diode 1.14 C/W RthJA Thermal resistance junction-ambient 50 C/W DocID024154 Rev 6 STGW60V60DF, STGWT60V60DF 2 Electrical characteristics Electrical characteristics TJ = 25 C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VGE = 15 V, IC = 60 A Collector-emitter saturation TJ = 125 C voltage VGE = 15 V, IC = 60 A TJ = 175 C Forward on-voltage Unit V 1.85 2.3 2.15 V 2.35 IF = 60 A VF Max. 600 VGE = 15 V, IC = 60 A VCE(sat) Typ. 2 2.6 V IF = 60 A TJ = 125 C 1.7 V IF = 60 A TJ = 175 C 1.6 V VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 7 V VCE = 600 V 25 A VGE = 20 V 250 nA Table 5. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 60 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge DocID024154 Rev 6 Min. Typ. Max. Unit - 8000 - pF - 280 - pF - 170 - pF - 334 - nC - 130 - nC - 58 - nC 3/16 Electrical characteristics STGW60V60DF, STGWT60V60DF Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 60 - ns Current rise time - 20 - ns - 2365 - A/s - 208 - ns - 14 - ns Turn-on current slope VCE = 400 V, IC = 60 A, RG = 4.7 , VGE = 15 V, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 0.75 - mJ Eoff(2) Turn-off switching losses - 0.55 - mJ Total switching losses - 1.3 - mJ Turn-on delay time - 57 - ns Current rise time - 23 - ns Turn-on current slope - 2191 - A/s - 216 - ns - 27 - ns Ets td(on) tr (di/dt)on td(off) tf VCE = 400 V, IC = 60 A, RG = 4.7 , VGE = 15 V, TJ = 175 C, see Figure 28 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1.5 - mJ Eoff(2) Turn-off switching losses - 0.8 - mJ Total switching losses - 2.3 - mJ Ets 1. Parameter Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol 4/16 Parameter Test conditions Min. Typ. Max. Unit - 74 - ns - 703 - nC - 19 - A - 714 - A/s trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 184 - J trr Reverse recovery time - 131 - ns Qrr Reverse recovery charge - 2816 - nC Irrm Reverse recovery current - 43 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 404 - A/s Err Reverse recovery energy - 821 - J IF = 60 A, VR = 400 V, VGE = 15 V, diF/dt = 1000 A/s see Figure 28 IF = 60 A, VR = 400 V, VGE = 15 V diF/dt = 1000 A/s TJ = 175 C, see Figure 28 DocID024154 Rev 6 STGW60V60DF, STGWT60V60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature AM17139v1 Ptot (W) Figure 3. Collector current vs. temperature case AM17140v1 IC (A) 350 80 300 70 VGE >_ 15 V, TJ <_ 175 C 60 250 50 200 40 150 30 100 20 50 10 0 0 0 25 50 100 125 150 175 TC (C) 75 Figure 4. Output characteristics @ 25 C AM17141v1 Ic (A) TJ = 25 C VGE=15 V 0 25 50 75 100 125 150 175 TC (C) Figure 5. Output characteristics @ 175 C AM17142v1 IC (A) VGE=15 V TJ = 175 C 13 V 200 200 11 V 11 V 13 V 150 150 9V 9V 100 100 50 50 7V 0 0 1 2 3 4 7V VCE (V) Figure 6. VCE(SAT) vs. junction temperature VCE(sat) (V) 3.2 AM17143v1 VGE = 15 V IC = 120 A 0 VCE(sat) (V) 3.2 3.0 2.8 2.8 2.6 2.6 2.4 IC = 60 A 2.2 2.2 2.0 2.0 1.8 1.8 1.6 IC = 30 A 2 3 4 VCE (V) 1.6 AM17144v1 VGE = 15 V TJ = 175 C TJ = 25 C TJ = - 40 C 1.4 1.4 1.2 -50 -25 1 Figure 7. VCE(SAT) vs. collector current 3.0 2.4 0 0 25 50 75 100 125 150 175 TJ (C) 1.2 10 20 30 40 50 60 70 80 90 100 110 120 IC (A) DocID024154 Rev 6 5/16 Electrical characteristics STGW60V60DF, STGWT60V60DF Figure 8. Collector current vs. switching frequency AM17145v1 Ic [A] Figure 9. Safe operating area AM17146v1 I C (A) 1 s 110 100 Tc=80C 100 100 s 90 Tc=100 C 80 10 70 1 ms 60 50 1 40 30 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 , VGE = 0/15 V, TJ =175C) 20 10 0.1 0 1 f [kHz] 10 Figure 10. Transfer characteristics AM17146v1 IC (A) 0.01 (single pulse TC =25 C, TJ <=175 C; VGE =15 V) 1 10 VCE (V) 100 Figure 11. Diode VF vs. forward current AM17148v1 VF (V) TJ= - 40C VCE= 5V TJ= 25C 2.8 200 2.4 150 2 100 1.6 25C 50 1.2 -40C 175 C 175C 0 6 7 8 9 10 11 VGE (V) Figure 12. Normalized VGE(th) vs. junction temperature VGE(th) AM17149v1 norm VCE= VGE IC= 1 mA 1.1 0.8 10 30 50 70 90 110 IF (A) Figure 13. Normalized V(BR)CES vs. junction temperature AM17150v1 V(BR)ces norm IC = 2 mA 1.1 1.0 0.9 1.0 0.8 0.7 0.6 -50 -25 6/16 0.9 0 25 50 75 100 125 150 175 TJ (C) -50 -25 0 DocID024154 Rev 6 25 50 75 100 125 150 175 TJ (C) STGW60V60DF, STGWT60V60DF Electrical characteristics Figure 14. Capacitance variations AM17151v1 C (pF) Figure 15. Gate charge vs. gate-emitter voltage AM17152v1 VGE (V) C ies 10000 VCC = 480V IC = 60A 16 14 C oes 12 1000 10 C res 8 6 100 4 f = 1MHz, VGE =0 2 10 0.1 1 10 VCE (V) Figure 16. Switching losses vs. collector current AM17153v1 E (J) 4500 4000 0 0 100 200 300 Qg (nC) Figure 17. Switching losses vs. gate resistance AM17154v1 E (J) 4500 VCC 400V, VGE= 15V, Rg=4.7, TJ = 175C 4000 3500 VCC=400V, VGE = 15V, IC = 60 A, TJ = 175 C 3500 3000 EON 3000 2500 EON 2500 2000 2000 1500 1500 1000 1000 E OFF 500 500 0 0 10 20 30 40 50 60 70 80 90 100 110120 Ic (A) Figure 18. Switching losses vs. junction temperature AM17155v1 E (J) 1500 1400 1300 0 10 20 30 40 RG () Figure 19. Switching losses vs. collector emitter voltage AM17156v1 E (J) 2000 VCC =400V, VGE = 15V, IC = 60 A, Rg = 4.7 VGE = 15V, TJ = 175C IC = 60 A, Rg = 4.7 E ON 1800 1200 1600 1100 1400 E ON 1000 900 1200 800 1000 E OFF 700 800 E OFF 600 600 500 400 25 EOFF 50 75 100 125 150 TJ (C) 400 150 DocID024154 Rev 6 200 250 300 350 400 450 Vce (V) 7/16 Electrical characteristics STGW60V60DF, STGWT60V60DF Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance AM17157v1 t(ns) AM17159v1 t(ns) VCC = 400V, VGE = 15V, Tj =175C, Rg = 4.7 VCC= 400V, VGE = 15V, Tj =175C Ic = 60 A 1000 tdoff t doff tr 100 tdon tr t don 100 tf tf 10 10 0 20 40 60 80 100 Ic (A) Figure 22. Reverse recovery current vs. diode current slope AM17158v1 Irm (A) 0 10 20 30 40 Rg () Figure 23. Reverse recovery time vs. diode current slope AM17160v1 trr (ns) Vr = 400 V, IF = 60 A Vr = 400V, IF = 60 A 50 200 40 150 175C 175 C 30 100 20 TJ=25C 50 10 0 0 500 1000 1500 2000 di/dt (A/s) Figure 24. Reverse recovery charge vs. diode current slope AM17161v1 Qrr (nC) Vr = 400V, IF = 60 A 0 TJ=25C 0 1000 1500 2000 di/dt (A/s) Figure 25. Reverse recovery energy vs. diode current slope Err (J) AM17162v1 VCC = 400V, VGE = 15V, IF = 60A 1400 2500 500 1200 2000 175C 175 C 1000 1500 800 600 1000 TJ=25C 400 500 200 TJ=25C 0 0 8/16 500 1000 1500 2000 di/dt (A/s) 0 0 DocID024154 Rev 6 500 1000 1500 2000 2500 3000 di/dt (A/s) STGW60V60DF, STGWT60V60DF Electrical characteristics Figure 26. Thermal data for IGBT ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse -2 10 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 27. Thermal data for diode DocID024154 Rev 6 9/16 Test circuits 3 STGW60V60DF, STGWT60V60DF Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit AM01504v1 Figure 30. Switching waveform AM01505v1 Figure 31. Diode recovery time waveform VG IF trr 90% VCE Qrr di/dt 90% 10% ta tb 10% Tr(Voff) t Tcross 90% IRRM IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton Tf Toff VF dv/dt AM01506v1 10/16 DocID024154 Rev 6 AM01507v1 STGW60V60DF, STGWT60V60DF 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024154 Rev 6 5.70 11/16 Package mechanical data STGW60V60DF, STGWT60V60DF Figure 32. TO-247 drawing 0075325_G 12/16 DocID024154 Rev 6 STGW60V60DF, STGWT60V60DF Package mechanical data Table 9. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 oP 3.10 18.40 18.60 3.30 Q 5 Q1 3.80 DocID024154 Rev 6 13/16 Package mechanical data STGW60V60DF, STGWT60V60DF Figure 33. TO-3P drawing 8045950_A 14/16 DocID024154 Rev 6 STGW60V60DF, STGWT60V60DF 5 Revision history Revision history Table 10. Document revision history Date Revision 15-Jan-2013 1 Changes Initial release. Added: 23-Apr-2013 2 04-Jun-2013 3 - New order code STGWT60V60DF and new package mechanical data TO-3P Table 9 on page 13, Figure 33 on page 14. - Section 2.1: Electrical characteristics (curves) on page 5. Updated Table 4: Static characteristics and Figure 12 on page 6. Document status changed from preliminary to production data. 21-Jun-2013 4 Updated Figure 3: Collector current vs. temperature case. 12-Jul-2013 5 Updated RthJC value for Diode in Table 3: Thermal data. 21-Oct-2013 6 Updated title, features and description in cover page. DocID024154 Rev 6 15/16 STGW60V60DF, STGWT60V60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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