This is information on a product in full production.
October 2013 DocID024154 Rev 6 1/16
16
STGW60V60DF,
STGWT60V60DF
Trench gate field-stop IGBT, V series
600 V, 60 A very high speed
Datasheet
-
production da ta
Figure 1. Internal schematic diagram
Features
•Maximum junction temperature: T
J
= 175 °C
•Tail-less switching off
•V
CE(sat)
= 1.85 V (typ.) @ I
C
= 60 A
•Tight parameters distribution
•Safe paralleling
•Low thermal resistance
•Very fast soft recovery antiparallel diode
Applications
•Photovoltaic inverters
•Uninterruptible power supply
•Welding
•Power factor correction
•Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2 or TAB)
G (1)
E (3)
TO-247
1
23
TO-3P
1
2
3
TAB
Table 1. Device summary
Order code Marking Package Packaging
STGW60V60DF GW60V60DF TO-247 Tube
STGWT60V60DF GWT60V60DF TO-3P Tube
www.st.com
Electrical ratings STGW60V60DF, STGWT60V60DF
2/16 DocID024154 Rev 6
1 Electrical ratings
Table 2. Absolute m aximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 80
(1)
1. Current level is limited by bond wires
A
I
C
Continuous collector current at T
C
= 100 °C 60 A
I
CP(2)
2. Pulse width limited by maximum junction temperature.
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 80
(1)
A
I
F
Continuous forward current at T
C
= 100 °C 60 A
I
FP(2)
Pulsed forward current 240 A
P
TOT
Total dissipation at T
C
= 25 °C 375 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.4 °C/W
R
thJC
Thermal resistance junction-case diode 1.14 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W
DocID024154 Rev 6 3/16
STGW60V60DF, STGWT60V60DF Electrical characteristics
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 60 A 1.85 2.3
V
V
GE
= 15 V, I
C
= 60 A
T
J
= 125 °C 2.15
V
GE
= 15 V, I
C
= 60 A
T
J
= 175 °C 2.35
V
F
Forward on-voltage
I
F
= 60 A 2 2.6 V
I
F
= 60 A T
J
= 125 °C 1.7 V
I
F
= 60 A T
J
= 175 °C 1.6 V
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0) V
CE
= 600 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0) V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-8000- pF
C
oes
Output capacitance - 280 - pF
C
res
Reverse transfer
capacitance -170-pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 60 A,
V
GE
= 15 V, see Figure 29
-334-nC
Q
ge
Gate-emitter charge - 130 - nC
Q
gc
Gate-collector charge - 58 - nC
Electrical characteristics STGW60V60DF, STGWT60V60DF
4/16 DocID024154 Rev 6
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A,
R
G
= 4.7 Ω, V
GE
= 15 V,
see Figure 28
-60-ns
t
r
Current rise time - 20 - ns
(di/dt)
on
Turn-on current slope - 2365 - A/μs
t
d(off)
Turn-off delay time - 208 - ns
t
f
Current fall time - 14 - ns
E
on(1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses - 0.75 - mJ
E
off(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 0.55 - mJ
E
ts
Total switching losses - 1.3 - mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 60 A,
R
G
= 4.7 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
-57-ns
t
r
Current rise time - 23 - ns
(di/dt)
on
Turn-on current slope - 2191 - A/μs
t
d(off)
Turn-off delay time - 216 - ns
t
f
Current fall time - 27 - ns
E
on(1)
Turn-on switching losses - 1.5 - mJ
E
off(2)
Turn-off switching losses - 0.8 - mJ
E
ts
Total switching losses - 2.3 - mJ
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 60 A, V
R
= 400 V,
V
GE
= 15 V,
di
F
/dt = 1000 A/μs
see Figure 28
-74-ns
Q
rr
Reverse recovery charge - 703 - nC
I
rrm
Reverse recovery current - 19 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 714 - A/μs
E
rr
Reverse recovery energy - 184 - μJ
t
rr
Reverse recovery time
I
F
= 60 A, V
R
= 400 V,
V
GE
= 15 V
di
F
/dt = 1000 A/μs
T
J
= 175 °C, see Figure 28
- 131 - ns
Q
rr
Reverse recovery charge - 2816 - nC
I
rrm
Reverse recovery current - 43 - A
dI
rr/
/dt Peak rate of fall of reverse
recovery current during t
b
- 404 - A/μs
E
rr
Reverse recovery energy - 821 - μJ
DocID024154 Rev 6 5/16
STGW60V60DF, STGWT60V60DF Electrical characteristics
2.1 Electrical chara cteristics (c urves)
Figure 2. Power dissipation vs. case
temperature Figure 3. Collector current vs. temperature case
Figure 4. Output characteristics @ 25 °C Figure 5. Output characteristics @ 175 °C
Figure 6. V
CE(SAT)
vs. junction temperature Figure 7. V
CE(SAT)
vs. collector current
AM17139v1
0
50
100
150
200
250
300
350
0 25 50 75 100 125 150 175
P
tot
(W)
T
C
(°C)
AM17140v1
0
10
20
30
40
50
60
70
80
0255075100125150175
IC(A)
TC(°C)
VGE > 15 V, TJ < 175 °C
__
AM17141v1
0
50
100
150
200
01234
Ic (A)
V
CE(V)
9 V
11 V
13 V
VGE=15 V
7 V
T
J
=25°C
AM17142v1
0
50
100
150
200
01234
I
C
(A)
V
CE
(V)
V
GE
=15 V
T
J
=175 °C
9 V
11 V
7 V
13 V
AM17143v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
-50 -25 0 25 50 75 100 125 150 175
V
CE(sat)
(V)
T
J
(ºC)
I
C
= 120 A
I
C
= 60 A
I
C
= 30 A
V
GE
=15 V
AM17144v1
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
10 20 30 40 50 60 70 80 90 100 110 120
V
CE(sat)
(V)
I
C
(A)
T
J
= - 40 °C
T
J
= 25 °C
T
J
= 175 °C
V
GE
= 15 V
Electrical characteristics STGW60V60DF, STGWT60V60DF
6/16 DocID024154 Rev 6
Figure 8. Collector current vs. switching
frequency Figure 9. Safe operating area
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward curren t
Figure 12. Normalized V
GE(th)
vs. junction
temperature Fig ure 13. Normali ze d V
(BR)CES
vs. junction
temperature
AM17145v1
0
10
20
30
40
50
60
70
80
90
100
110
110
Ic [A]
f [kHz]
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R
G
=4.7Ω,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100 °C
AM17146v1
0.01
0.1
1
10
100
110100
IC(A)
VCE (V)
(single pulse T
C
=25 °C,
T
J
<=175 °C; V
GE
=15 V)
1 μs
100 μs
1 ms
AM17146v1
-40°C
0
50
100
150
200
67891011
IC(A)
V
GE (V)
175°C
T
J
= 25°C
VCE= 5V
AM17148v1
0.8
1.2
1.6
2
2.4
2.8
10 30 50 70 90 110
V
F
(V)
I
F
(A)
175 °C
25°C
T
J
= - 40°C
AM17150v1
0.9
1.0
1.1
-50 -25 0 25 50 75 100 125 150 175
V(BR)ces
norm
T
J(ºC)
I
C
= 2 mA
DocID024154 Rev 6 7/16
STGW60V60DF, STGWT60V60DF Electrical characteristics
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching losses vs. collector
current Figure 17. Switching losses vs. gate resistance
Figure 18. Switching losses vs. junction
temperature F igure 19. Switch ing losses vs. co llec tor
emitter voltage
AM17151v1
10
100
1000
10000
0.1 1 10
C (pF)
V
CE
(V)
C
res
C
oes
C
ies
f= 1MHz, V
GE
=0
AM17152v1
0
2
4
6
8
10
12
14
16
0100200300
V
GE
(V)
Qg (nC)
V
CC
= 480V
I
C
= 60A
AM17153v1
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 102030405060708090100110120
E (μJ)
Ic (A)
E
ON
E
OFF
V
CC
400V, V
GE
= 15V,
Rg=4.7Ω, T
J
= 175°C
AM17154v1
500
1000
1500
2000
2500
3000
3500
4000
4500
010203040
E (μJ)
R
G
(Ω)
E
ON
E
OFF
V
CC
=400V, V
GE
= 15V,
I
C
= 60 A, T
J
= 175 °C
AM17155v1
400
500
600
700
800
900
1000
1100
1200
1300
1400
1500
25 50 75 100 125 150
E (μJ)
T
J
(ºC)
E
ON
E
OFF
V
CC
=400V, V
GE
= 15V,
I
C
= 60 A, Rg = 4.7
Ω
AM17156v1
400
600
800
1000
1200
1400
1600
1800
2000
150 200 250 300 350 400 450
E (μJ)
Vce (V)
E
ON
E
OFF
V
GE
= 15V, T
J
= 175°C
I
C
= 60 A, Rg = 4.7
Ω
Electrical characteristics STGW60V60DF, STGWT60V60DF
8/16 DocID024154 Rev 6
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
Figure 22. Reverse recovery current vs. diode
current slope Figure 23. Reverse recovery time vs. diode
current slope
Figure 24. Reverse recovery charge vs. diode
current slope Figure 25. Reverse recovery energy vs. diode
current slope
AM17157v1
10
100
020406080100
t(ns)
Ic (A)
t
f
t
doff
VCC = 400V, V
GE = 15V,
Tj =175°C, Rg = 4.7 Ω
t
r
t
don
AM17159v1
10
100
1000
010203040
t(ns)
Rg (Ω)
t
f
t
doff
V
CC
= 400V, V
GE
= 15V,
Tj =175°C Ic = 60 A
tr
tdon
AM17158v1
0
10
20
30
40
50
0 500 1000 1500 2000
I
rm
(A)
di/dt (A/μs)
Vr= 400 V, I
F
= 60 A
T
J
=25°C
175°C
AM17160v1
0
50
100
150
200
0 500 1000 1500 2000
trr (ns)
di/dt (A/μs)
V
r
= 400V, I
F
= 60 A
175 °C
T
J
=25°C
AM17161v1
0
500
1000
1500
2000
2500
0 500 1000 1500 2000
Qrr (nC)
di/dt (A/μs)
Vr= 400V, IF= 60 A
175 °C
T
J
=25°C
AM17162v1
0
200
400
600
800
1000
1200
1400
0 500 1000 1500 2000 2500 3000
Err
(μJ)
di/dt (A/μs)
V
CC = 400V, VGE = 15V, IF= 60A
175°C
T
J
=25°C
DocID024154 Rev 6 9/16
STGW60V60DF, STGWT60V60DF Electrical characteristics
Figure 26. Therma l data for IGBT
Figure 27. Thermal data for diode
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2
Test circuits STGW60V60DF, STGWT60V60DF
10/16 DocID024154 Rev 6
3 Test circuits
Figure 28. Test circuit for inductive load
switching Figure 29. Gate charge test circuit
Figure 30. Switching waveform Figure 31. Diode recovery time waveform
AM01504v1
AM01505v1
AM01506v1
90%
10%
90%
10%
VG
VCE
IC
Td(on)
To n
Tr(Ion)
Td(off)
Toff
Tf
Tr(Voff)
Tcross
90%
10%
AM01507v1
IRRM
IF
di/dt
trr
tatb
Qrr
IRRM
t
VF
dv/dt
DocID024154 Rev 6 11/16
STGW60V60DF, STGWT60V60DF Package mechanical data
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK is an ST trademark.
Table 8. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STGW60V60DF, STGWT60V60DF
12/16 DocID024154 Rev 6
Figure 32. TO-2 47 drawing
0075325_G
DocID024154 Rev 6 13/16
STGW60V60DF, STGWT60V60DF Package mechanical data
Table 9. TO-3P mechanical data
Dim. mm
Min. Typ. Max.
A4.60 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1 1.20
b1 1.80 2.20
b2 2.80 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.90
E 15.40 15.80
E1 13.60
E2 9.60
e 5.15 5.45 5.75
L 19.50 20 20.50
L1 3.50
L2 18.20 18.40 18.60
øP 3.10 3.30
Q5
Q1 3.80
Package mechanical data STGW60V60DF, STGWT60V60DF
14/16 DocID024154 Rev 6
Figure 33. TO-3P drawing
8045950_A
DocID024154 Rev 6 15/16
STGW60V60DF, STGWT60V60DF Revision history
5 Revision history
Table 10. Document revision history
Date Revision Changes
15-Jan-2013 1 Initial release.
23-Apr-2013 2
Added:
– New order code STGWT60V60DF and new package
mechanical data TO-3P Table 9 on page 13, Figure 33
on page 14.
–Section 2.1: Electrical characteristics (curves) on
page 5.
04-Jun-2013 3
Updated
Table 4: Static characteristics and Figure 12 on
page 6.
Document status changed from preliminary to production data.
21-Jun-2013 4 Updated
Figure 3: Collector current vs. temperature case.
12-Jul-2013 5 Updated R
thJC
value for Diode in
Table 3: Thermal data.
21-Oct-2013 6 Updated title, features and description in cover page.
STGW60V60DF, STGWT60V60DF
16/16 DocID024154 Rev 6
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
STMicroelectronics:
STGW60V60DF STGWT60V60DF