V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
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Revision: 19-Jun-2018 1Document Number: 89042
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Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.38 V at IF = 5 A
DESIGN SUPPORT TOOLS
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Low thermal resistance
• Solder bath temperature 275 °C maximum, 10 s, per JESD
22-B106 (for TO-220AB, ITO-220AB, and TO-262AA
package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, D2PAK (TO-263AB), and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 20 A
VRRM 100 V
IFSM 250 A
VF at IF = 20 A 0.61 V
TJ max. 150 °C
Package TO-220AB, ITO-220AB,
D2PAK (TO-263AB), TO-262AA
Circuit configuration Common cathode
TO-220AB
1
23
1
K
23
1
2
K
TO-262AA
PIN 1 PIN 2
PIN 3 K
PIN 1
PIN 2
K
HEATSINK
PIN 1 PIN 2
PIN 3
PIN 1 PIN 2
CASE
PIN 3
C00104FVC00104V
VI40100CVB40100C
TMBS®
ITO-220AB
123
D2PAK (TO-263AB)
click logo to get started
Available
Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V40100C VF40100C VB40100C VI40100C UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current (fig. 1) per device IF(AV)
40 A
per diode 20
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 250 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 90 mH per diode EAS 230 mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz,
TJ = 38 °C ± 2 °C per diode IRRM 1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 2Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage (2)
IR = 1.0 mA
TA = 25 °C VBR
100
(minimum) -
V
IR = 10 mA 105
(minimum) -
Instantaneous forward voltage per diode (1)
IF = 5 A
TA = 25 °C
VF
0.47 -
V
IF = 10 A 0.54 -
IF = 20 A 0.67 0.73
IF = 5 A
TA = 125 °C
0.38 -
IF = 10 A 0.45 -
IF = 20 A 0.61 0.67
Reverse current at rated VR per diode (2)
VR = 70 V TA = 25 °C
IR
9-μA
TA = 125 °C 10 - mA
VR = 100 V TA = 25 °C - 1000 μA
TA = 125 °C 21 45 mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V40100C VF40100C VB40100C VI40100C UNIT
Typical thermal resistance per diode RJC 2.0 4.0 2.0 2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V40100C-E3/4W 1.85 4W 50/tube Tube
ITO-220AB VF40100C-E3/4W 1.75 4W 50/tube Tube
TO-263AB VB40100C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB40100C-E3/8W 1.39 8W 800/tube Tape and reel
TO-262AA VI40100C-E3/4W 1.46 4W 50/tube Tube
Case Temperature (°C)
Average Forward Current (A)
50
40
30
20
10
0
0 25 50 75 100 125 150 175
VF40100C
VI40100C
VB40100C
V40100C
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
D = t
p
/T t
p
T
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 3Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.8 1
100
10
1
0.1
T
A
= 25 °C
T
A
= 125 °C
T
A
= 150 °C
T
A
= 100 °C
Instantaneous Forward Current (A)
10 20 30 40 50 60 70 80 90 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
110
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
10 000
1000
100
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
V(I)40100C
100
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
VF40100C
10
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 4Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.415 (10.54)
0.380 (9.65)
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.161 (4.08)
0.139 (3.53)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
V40100C-E3, VF40100C-E3, VB40100C-E3, VI40100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 19-Jun-2018 5Document Number: 89042
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TO-262AA
0.401 (10.19)
0.381 (9.68)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
123
0.055 (1.40)
0.047 (1.19)
0.510 (12.95)
0.470 (11.94)
PIN
0.411 (10.45)
0.380 (9.65)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.057 (1.45)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
0.950 (24.13)
0.920 (23.37)
D2PAK (TO-263AB) Mounting Pad Layout
0.670 (17.02)
0.591 (15.00)
0.105 (2.67)
0.095 (2.41)
0.08 (2.032) MIN.
0.15 (3.81) MIN.
0.33 (8.38) MIN.
0.42 (10.66) MIN.
12
K
K
0.140 (3.56)
0.110 (2.79)
0.021 (0.53)
0.014 (0.36)
0.110 (2.79)
0.090 (2.29)
0 to 0.01 (0 to 0.254)
0.055 (1.40)
0.047 (1.19)
0.055 (1.40)
0.045 (1.14)
0.190 (4.83)
0.160 (4.06)
0.205 (5.20)
0.195 (4.95)
0.624 (15.85)
0.591 (15.00)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.360 (9.14)
0.320 (8.13)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
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Revision: 01-Jan-2021 1Document Number: 91000
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