71598HA (KT)/8270MH/6080MO/3187AT/3125KI/0193KI, TS(KOTO) No.781-1/4
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
PNP/NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching
Audio 80W Output Predriver Applications
Ordering number:EN781F
2SA1208/2SC2910
( ) : 2SA1208
Specifications
Absolute Maximum Ratings at Ta = 25ËšC
Electrical Characteristics at Ta = 25ËšC
Package Dimensions
unit:mm
2006A [2SA1208/2SC2910]
Features
· Adoption of FBET process.
· High breakdown voltage.
· Excellent linearity of hFE and small Cob.
· Fast swtching speed.
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVesaB-ot-rotcelloCV
OBC 081)–(V
egatloVrettimE-ot-rotcelloCV
OEC 061)–(V
egatloVesaB-ot-rettimEV
OBE 5)–(V
tnerruCrotcelloCI
C07)–(Am
)esluP(tnerruCrotcelloCI
PC 041)–(Am
noitapissiDrotcelloCP
C009Wm
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
ËšC
ËšC
retemaraPlobmySsnoitidnoC sgnitaR tinU
nimpytxam
tnerruCffotuCrotcelloCI
OBC VBC I,V08)–(= E0=1.0)–(Aµ
tnerruCffotuCrettimEI
OBE VBE I,V4)–(= C0=1.0)–(Aµ
niaGtnerruCCDh
EF VEC I,V5)–(= CAm01)–(=*001*004
tcudorPhtdiwdnaB-niaGf
TVEC I,V01)–(= CAm01)–(=051zHM
ecnaticapaCtuptuOC
bo VBC zHM1=f,V01)–(=0.2)5.2(Fp
egatloVnoitarutaSrettimE-ot-rotcelloCV
)tas(EC ICI,Am03)–(= BAm3)–(=80.0 )41.0–( 3.0 )4.0–( V
emiTNO-nruTt
no tiucriCtseTdeificepseeS1.0sµ
emiTllaFt
ftiucriCtseTdeificepseeS2.0sµ
emiTegarotSt
gts tiucriCtseTdeificepseeS0.1sµ
002R001082S041004T002
* : The 2SA1208/2SC2910 are classified by 10mA hFE are follows : Switching Time Test Circuit
IC=10IB1=–10IB2=10mA (For PNP, the polarity is reversed)
Unit (resistance : Ω, capacitance : F)
EIAJ:SC-51
SANYO:MP B:Base
C:Collector
E:Emitter