© Semiconductor Components Industries, LLC, 2014
February, 2014 − Rev. 13
1Publication Order Number:
MUR820/D
MUR805G, MUR810G,
MUR815G, MUR820G,
MUR840G, MUR860G,
MURF860G, SUR8820G,
SUR8840G
Switch-mode Power
Rectifiers
This series is designed for use in switching power supplies,
inverters and as free wheeling diodes.
Features
•Ultrafast 25 and 50 Nanosecond Recovery Time
•175°C Operating Junction Temperature
•Epoxy Meets UL 94 V−0 @ 0.125 in
•Low Forward Voltage
•Low Leakage Current
•Reverse Voltage to 600 V
•ESD Ratings:
♦Machine Model = C (> 400 V)
♦Human Body Model = 3B (> 16,000 V)
•SUR8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
•These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics:
•Case: Epoxy, Molded
•Weight: 1.9 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes: 260°C Max for 10 Seconds
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ULTRAFAST RECTIFIERS
8.0 AMPERES, 50−600 VOLTS
1
3
4
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See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
TO−220AC
CASE 221B
STYLE 1
MARKING DIAGRAMS
A = Assembly Location
Y = Year
WW = Work Week
U8XX = Device Code
xx = 05, 10, 15, 20, 40, or 60
G=Pb−Free Package
KA = Diode Polarity
AY WWG
U8xx
KA
TO−220 FULLPAK
CASE 221AG
STYLE 1
AYWWG
MURF860
KA
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
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2
MAXIMUM RATINGS
Rating Symbol
MUR/SUR8
Unit
805 810 815 820 840 860
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50 100 150 200 400 600 V
Average Rectified Forward Current
Total Device, (Rated VR), TC = 150°C
IF(AV) 8.0 A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz), TC = 150°C
IFM 16 A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM 100 A
Operating Junction Temperature and Storage Temperature Range TJ, Tstg −65 to +175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol
MUR/SUR8
Unit
805 810 815 820 840 860
Maximum Thermal Resistance, Junction−to−Case RqJC 3.0 2.0 °C/W
Thermal Resistance, Junction−to−Case
MURF860
RqJC 4.75
°C/W
Thermal Resistance, Junction−to−Ambient RqJA 73 °C/W
Thermal Resistance, Junction−to−Ambiente
MURF860
RqJA 75
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic Symbol
MUR/SUR8
Unit
805 810 815 820 840 860
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 8.0 A, TC = 150°C)
(iF = 8.0 A, TC = 25°C)
vF0.895
0.975
1.00
1.30
1.20
1.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated DC Voltage, TJ = 150°C)
(Rated DC Voltage, TJ = 25°C)
iR250
5.0
500
10
mA
Maximum Reverse Recovery Time
(IF = 1.0 A, di/dt = 50 A/ms)
(IF = 0.5 A, iR = 1.0 A, IREC = 0.25 A)
trr 35
25
60
50
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
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3
MUR805G, MUR810G, MUR815G, MUR820G, SUR8820G
Figure 1. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.2 0.50.3 0.7
30
0.1
0.3
0.2
2.0
1.0
100
20
7.0
3.0
0.5
5.0
50
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
1.2
VR, REVERSE VOLTAGE (VOLTS)
06040 100 120
1000
0.1
0.01
10
100 TJ = 175°C
IR
20 80 200
Figure 2. Typical Reverse Current*
TA, AMBIENT TEMPERATURE (°C)
0
12
2.0
6.0
4.0
14
IF(AV)
0
20 40 60 80 200
TC, CASE TEMPERATURE (°C)
140 150
0
2.0
1.0
3.0
5.0
4.0
I
180
Figure 3. Current Derating, Case
Figure 4. Current Derating, Ambient
0
1.0
6.0
10
0
1.0 2.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 5. Power Dissipation
0.4
0.7
10
70
0.9 1.1
100°C
TJ = 175°C25°C
160 180140
1.0
, REVERSE CURRENT ( A)
100°C
25°C
170160
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
P
, AVERAGE FORWARD CURRENT (AMPS)
TJ = 175°C
i
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
3.0 4.0 10
5.0
2.0
RATED VR APPLIED
dc
SQUARE WAVE
m
SQUARE WAVE
0.6 0.8 1.0
100 120 140 160 180
8.0
10
dc
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
5.0 6.0 7.0 8.0 9.0
3.0
4.0
9.0
8.0
7.0
7.0
6.0
8.0
10
9.0
SQUARE WAVE
dc
SQUARE WAVE
dc
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEAT SINK)
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
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MUR840G, SUR8840G
Figure 6. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.6 1.0
30
0.1
0.3
0.2
2.0
1.0
100
20
7.0
3.0
0.5
5.0
50
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
VR, REVERSE VOLTAGE (VOLTS)
0 150100 250 300
1000
0.1
0.01
10
100
TJ = 175°C
IR
50 200 500
Figure 7. Typical Reverse Current*
TA, AMBIENT TEMPERATURE (°C)
0
12
2.0
6.0
4.0
14
IF(AV)
0
20 40 60 80 200
TC, CASE TEMPERATURE (°C)
140 150
0
2.0
1.0
3.0
5.0
4.0
I
180
Figure 8. Current Derating, Case
Figure 9. Current Derating, Ambient
0
1.0
6.0
10
0
1.0 2.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 10. Power Dissipation
0.4
0.7
10
70
1.4
100°C
TJ = 175°C25°C
400 450350
1.0
, REVERSE CURRENT ( A)
100°C
25°C
170160
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
P
, AVERAGE FORWARD CURRENT (AMPS)
TJ = 175°C
i
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
3.0 4.0 10
5.0
2.0
RATED VR APPLIED
dc
SQUARE WAVE
m
SQUARE WAVE
0.8 1.2 1.6
100 120 140 160 180
8.0
10 dc
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
5.0 6.0 7.0 8.0 9.0
3.0
4.0
9.0
8.0
7.0
7.0
6.0
8.0
10
9.0
SQUARE WAVE
dc
SQUARE WAVE
dc
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEAT SINK)
150°C
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
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MUR860G, MURF860G
Figure 11. Typical Forward Voltage
vF, INSTANTANEOUS VOLTAGE (VOLTS)
0.6 1.0
100
0.1
10
, INSTANTANEOUS FORWARD CURRENT (AMPS)
F
VR, REVERSE VOLTAGE (VOLTS)
600100 300
1000
0.1
0.01
10
100
TJ = 150°C
IR
200 500
Figure 12. Typical Reverse Current*
TA, AMBIENT TEMPERATURE (°C)
0
7.0
2.0
6.0
4.0
9.0
IF(AV)
020 40 60 80 200
TC, CASE TEMPERATURE (°C)
140 150
0
2.0
1.0
3.0
5.0
4.0
I
180
Figure 13. Current Derating, Case Figure 14. Current Derating, Ambient
0
1.0
6.0
10
01.0 2.0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 15. Power Dissipation
0.4
1
1.4
100°C
TJ = 150°C
25°C
400
1.0
, REVERSE CURRENT ( A)
100°C
25°C
170160
* The curves shown are typical for the highest voltage device in the
grouping. Typical reverse current for lower voltage selections can be
estimated from these same curves if VR is sufficiently below rated VR.
P
, AVERAGE FORWARD CURRENT (AMPS)
TJ = 175°C
i
, AVERAGE FORWARD CURRENT (AMPS)
F(AV)
3.0 4.0 10
5.0
2.0
RATED VR APPLIED
dc
SQUARE WAVE
m
SQUARE WAVE
0.8 1.2 1.6
100 120 140 160 180
8.0
10
dc
, AVERAGE POWER DISSIPATION (WATTS)
F(AV)
5.0 6.0 7.0 8.0 9.0
3.0
4.0
9.0
8.0
7.0
7.0
6.0
8.0
10
9.0
SQUARE
WAVE
dc
SQUARE WAVE
dc
RqJA = 16°C/W
RqJA = 60°C/W
(NO HEAT SINK)
1.8
11
12
13
14
3.0
5.0
1.0
10
100
tp, SQUARE WAVE PULSE DURATION (ms)
Figure 16. Typical Non−Repetitive Surge
Current
I
100 10,000
, NON-REPETITIVE SURGE CURRENT (A)
FSM
1,000
1,000
10,000
* Typical performance based on a limited sample size. ON Semiconductor
does not guarantee ratings not listed in the Maximum Ratings table.
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
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0.01
0.02
0.05
0.1
0.2
0.5
1.0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
t, TIME (ms)
Figure 17. Thermal Response
D = 0.5
0.05
SINGLE PULSE
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
ZqJC(t) = r(t) RqJC
RqJC = 1.5°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT T1
TJ(pk) - TC = P(pk) ZqJC(t)
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
0.1
0.01
Figure 18. Thermal Response, (MURF860G) Junction−to−Case (RqJC)
t, TIME (s)
0.1
10
0.001
1.0 10 100 1000
0.1
0.000001
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
0.2
0.02
1.0
0.01
0.010.0010.00010.00001
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED) (°C/W)
Figure 19. Thermal Response, (MURF860G) Junction−to−Ambient (RqJA)
t, TIME (s)
0.1
100
0.001
1.0 10 100 1000
0.1
0.000001
ZqJC(t) = r(t) RqJC
RqJC = 1.6°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) ZqJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
0.1
0.05
0.01
SINGLE PULSE
0.2
0.02
1.0
0.01
0.010.0010.00010.00001
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED) (°C/W)
10
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
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1000
10
20
50
10 100
VR, REVERSE VOLTAGE (V)
Figure 20. Typical Capacitance
C, CAPACITANCE (pF)
100
200
500
1.0 2.0 5.0 20 50
TJ = 25°C
ORDERING INFORMATION
Device Package Shipping
MUR805G TO−220AC
(Pb−Free)
50 Units / Rail
MUR810G TO−220AC
(Pb−Free)
50 Units / Rail
MUR815G TO−220AC
(Pb−Free)
50 Units / Rail
MUR820G TO−220AC
(Pb−Free)
50 Units / Rail
SUR8820G TO−220AC
(Pb−Free)
50 Units / Rail
MUR840G TO−220AC
(Pb−Free)
50 Units / Rail
SUR8840G TO−220AC
(Pb−Free)
50 Units / Rail
MUR860G TO−220AC
(Pb−Free)
50 Units / Rail
MURF860G TO−220FP
(Pb−Free)
50 Units / Rail
MUR805G, MUR810G, MUR815G, MUR820G, MUR840G, MUR860G, MURF860G,
SUR8820G, SUR8840G
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PACKAGE DIMENSIONS
TO−220 TWO−LEAD
CASE 221B−04
ISSUE F
STYLE 1:
PIN 1. CATHODE
2. N/A
3. ANODE
4. CATHODE
B
R
J
D
G
L
H
QT
U
A
K
C
S
4
13
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.595 0.620 15.11 15.75
B0.380 0.405 9.65 10.29
C0.160 0.190 4.06 4.82
D0.025 0.039 0.64 1.00
F0.142 0.161 3.61 4.09
G0.190 0.210 4.83 5.33
H0.110 0.130 2.79 3.30
J0.014 0.025 0.36 0.64
K0.500 0.562 12.70 14.27
L0.045 0.060 1.14 1.52
Q0.100 0.120 2.54 3.04
R0.080 0.110 2.04 2.79
S0.045 0.055 1.14 1.39
T0.235 0.255 5.97 6.48
U0.000 0.050 0.000 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
F
TO−220 FULLPAK, 2−LEAD
CASE 221AG
ISSUE A
STYLE 1:
PIN 1. CATHODE
2. N/A
3. ANODE
DIM MIN MAX
MILLIMETERS
D14.22 15.88
E9.65 10.67
A4.30 4.70
b0.54 0.84
P3.00 3.40
e
L1 --- 2.80
c0.49 0.79
L12.70 14.73
b2 1.10 1.40
Q2.80 3.20
A2 2.50 2.90
A1 2.50 2.90
H1 5.97 6.48
E
Q
L1
b2
e
D
L
P
123
4
b
SEATING
PLANE
A
A1
H1
A2
c
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR UNCONTROLLED IN THIS AREA.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH
AND GATE PROTRUSIONS. MOLD FLASH AND GATE
PROTRUSIONS NOT TO EXCEED 0.13 PER SIDE. THESE
DIMENSIONS ARE TO BE MEASURED AT OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSION b2 DOES NOT INCLUDE DAMBAR
PROTRUSION. LEAD WIDTH INCLUDING PROTRUSION
SHALL NOT EXCEED 2.00.
2.54 BSC
M
0.14 M
A
A
B
C
E/2
M
0.25 M
AB
3X
C
3X
B
NOTE 3
e1 5.08 BSC
e1
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Phone: 81−3−5817−1050
MUR820/D
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