(, SGS-THOMSON =M1J10004/4P/4PFI 7 MicRozLecTROMICs MJ10005/5P/5PFI EPITAXIAL PLANAR NPN DESCRIPTION The MJ10004/5, MJ10004P/5P and MJ10004PFI/ 5PFI are silicon epitaxial planar NPN transistors in monolithic Darlington configuration with integrated speed-up diode. They are mounted respectively in TO-3 metal case, TO-218 plastic package and ISOWATT218 fully iso- lated package. They are designed for high power, fast switching ap- plications. ISOWATT218 INTERNAL SCHEMATIC DIAGRAM R1 Typ. 250 2 R2 Typ. 500 2 ABSOLUTE MAXIMUM RATINGS Symbol Parameter MJ10004/4P/4PFI | MJ10005/5P/5PFI Unit Vcex | Collector-emitter Voltage (Vee = 5V) 350 400 Vv Vcev | Collector-emitter Voltage (Vgc = 1.5V) 400 450 Vv Vceo Collector-emitter Voltage (lp = 0) 450 500 v VEBO Emitter-base Voltage (Ic = 0) 8 Vv Ie Collector Current 20 A lom Collector Peak Current 30 A Ig Base Current 25 A Ibu Base Peak Current 5 A TO-3 TO-218 |ISOWATT218 Prot Total Power Dissipation at T, < 25C 175 125 60 Ww Tstg Storage Temperature 65 to 200/- 65 to 150] 65 ta 150 ne} Tj Max. Operating Junction Temperature 200 150 150 C December 1988 1/2 823MJ10004/04P/04P i-Mie *Q0US/09F 092%! THERMAL DATA TO-3 TO-218 |ISOWATT218 Rth j-case| Thermal Resistance Junction-case Max 1 1 2.08 C/W ELECTRICAL CHARACTERISTICS (T,as- = 25C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit IceR Collector Cutoff Current Voce = Rated Vcey 5 mA (Ree = 502) Tease = 100C Icev Collector Cutoff Current Vcev = Rated Value 0.25 mA (Vee = 1.5V} Vcev = Rated Value Tcase = 150C 5 mA lepo Emitter Cutoff Current Veg =2V 175 mA (tc =0) VcEoisus}"| Collector-emitter Sustaining lo = 250mMA Voltage (Ig =0) Velamp = Rated Vceo for MJ10004/4P/4PFI 350 Vv for MJ10005/5P/4PFI 400 Vv Vcexisus)| Collector-emitter Sustaining | Io =2A Voltage (Vee = 5V) Velamp = Rated Voex Toase = 100C for MJ10004/4P/4PFI 400 Vv for MJ10005/5P/5PFI 450 Vv Io = 10A Tcase = 100C Velamp = Rated Vcex for MJ10004/4P/4PFI 275 v for MJ10005/5P/5PFI 325 Vv Vce (sat)"| Collector-emitter Saturation | Ic = 10A lg = 400mA 1.9 v Voltage Ico = 20A Ip =2A 3 v Io = 10A Ip = 400mA Tcase = 100C 25 Vv VeeE(sat)| Base-emitter Saturation Io = 10A lg = 400mA 25 Vv Voltage Io = 10A Ip = 400mA Tease = 100C 25 v Hee* DC Current Gain Io = 5A Voce =5V 50 600 lo = 10A Vee =5V 40 400 Ve* Diode Forward Voltage Ip =10A 1.8 5 v te Smail-signal Current Gain Ic =1A _ f = 1MHz Voe = 10V 10 Cob Output Capacitance Vop = 10V _ f 100MHz le =0 100 325 pF ton Turn-on Time Voc = 250V Io = 10A 0.5 0.8 ys . lei =- Igo = 400mA ts Storage Time Veet) = 5V 1 1.5 us tr Fail Time tp = 50us Duty Cycle - 2% 0.3 0.5 Ls 2/2 824 - SON yz SES-THOMSON