S-1000N22-N4T1U - Seiko Instruments USA, Inc.

S-1000 Series

www.sii-ic.com

ULTRA-SMALL PACKAGE HIGH-PRECISION

VOLTAGE DETECTOR

Seiko Instruments Inc. 1

The S-1000 series is a series of high-precision voltage detectors developed using CMOS process. T he detection voltage is

fixed internally with an accuracy of ±1.0%. It operates with low current consumption of 350 nA typ. Two output forms, Nch

open-drain and CMOS output, are available. CMOS voltage detector, S-1000 Series is the most suitable for the portable

equipments with ultra low current consumption, high precision and corresponding to the small package.

 Features

• Ultra-low current consumption 350 nA typ. (VDD = detection voltage + 1.5 V)

• High-precision detection voltage ±1.0%

• Operating voltage range 0.95 to 5.5 V

• Hysteresis characteristics 5% typ.

• Detection voltage 1.5 to 4.6 V (0.1 V step)

• Output form Nch open-drain output (Active “L”)

CMOS output (Active “L”)

• Lead-free, Sn 100%, halogen-free*1

*1. Refer to “ Product Name Structure” for details.

 Applications

• Power monitor for microcomputers and reset for CPUs.

• Power monitor for portable equipments such as cellular phones, digital still cameras and PDAs.

• Constant voltage power monitor for cameras, video equipments and communication devices.

 Packages

• SC-82AB

• SOT-23-5

• SNT-4A

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

S-1000 Series Rev.3.0_00

2 Seiko Instruments Inc.

 Block Diagrams

1. Nch open-drain output products

VSS

− OUT

VDD

REF

*1. Parasitic diode Figure 1

2. CMOS output products

−

OUT

VSS

VDD

REF

*1. Parasitic diode Figure 2

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Seiko Instruments Inc. 3

 Product Name Structure

The detection voltage, output form and packages for S-1000 series can be selected at the user's request. Refer to the “1.

Product name” for the construction of the product name, “2. Package” regarding the package drawings and “3. Product

name list” for the full product names.

1. Product name

S-1000 x xx - xxxx x

Package name (abbreviation) and packing spec ifications*1

N4T1: S C-82AB, tape

M5T1: SOT-23-5, tape

I4T1: SNT-4A, tape

Detection voltage value

15 ~ 46

(e.g. When the detection voltage is 1.5 V, it is expressed as 15.)

Output form

N: Nch open-dra in output (Active “L”)

C: CMOS output (Active “L”)

Environment al code

U: Lead-free (Sn 100%), halogen-free

G: Lead-free (f or details, pleas e contact our sales office)

*1. Refer to the taping specif ications at the end of this book.

2. Package

Drawing code

Package name Package Tape Reel Land

SC-82AB NP004-A-P-SD

NP004-A-C-SD

NP004-A-C-S1 NP004-A-R-SD −

SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD −

SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD

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S-1000 Series Rev.3.0_00

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3. Product name list

3. 1 Nch open-drain output products

Table 1

Detection voltage range

SC-82AB SOT-23-5 SNT-4A

1.5 V ± 1.0% S-1000N15-N4T1x S-1000N15-M5T1x S-1000N15-I4T1x

1.6 V ± 1.0% S-1000N16-N4T1x S-1000N16-M5T1x S-1000N16-I4T1x

1.7 V ± 1.0% S-1000N17-N4T1x S-1000N17-M5T1x S-1000N17-I4T1x

1.8 V ± 1.0% S-1000N18-N4T1x S-1000N18-M5T1x S-1000N18-I4T1x

1.9 V ± 1.0% S-1000N19-N4T1x S-1000N19-M5T1x S-1000N19-I4T1x

2.0 V ± 1.0% S-1000N20-N4T1x S-1000N20-M5T1x S-1000N20-I4T1x

2.1 V ± 1.0% S-1000N21-N4T1x S-1000N21-M5T1x S-1000N21-I4T1x

2.2 V ± 1.0% S-1000N22-N4T1x S-1000N22-M5T1x S-1000N22-I4T1x

2.3 V ± 1.0% S-1000N23-N4T1x S-1000N23-M5T1x S-1000N23-I4T1x

2.4 V ± 1.0% S-1000N24-N4T1x S-1000N24-M5T1x S-1000N24-I4T1x

2.5 V ± 1.0% S-1000N25-N4T1x S-1000N25-M5T1x S-1000N25-I4T1x

2.6 V ± 1.0% S-1000N26-N4T1x S-1000N26-M5T1x S-1000N26-I4T1x

2.7 V ± 1.0% S-1000N27-N4T1x S-1000N27-M5T1x S-1000N27-I4T1x

2.8 V ± 1.0% S-1000N28-N4T1x S-1000N28-M5T1x S-1000N28-I4T1x

2.9 V ± 1.0% S-1000N29-N4T1x S-1000N29-M5T1x S-1000N29-I4T1x

3.0 V ± 1.0% S-1000N30-N4T1x S-1000N30-M5T1x S-1000N30-I4T1x

3.1 V ± 1.0% S-1000N31-N4T1x S-1000N31-M5T1x S-1000N31-I4T1x

3.2 V ± 1.0% S-1000N32-N4T1x S-1000N32-M5T1x S-1000N32-I4T1x

3.3 V ± 1.0% S-1000N33-N4T1x S-1000N33-M5T1x S-1000N33-I4T1x

3.4 V ± 1.0% S-1000N34-N4T1x S-1000N34-M5T1x S-1000N34-I4T1x

3.5 V ± 1.0% S-1000N35-N4T1x S-1000N35-M5T1x S-1000N35-I4T1x

3.6 V ± 1.0% S-1000N36-N4T1x S-1000N36-M5T1x S-1000N36-I4T1x

3.7 V ± 1.0% S-1000N37-N4T1x S-1000N37-M5T1x S-1000N37-I4T1x

3.8 V ± 1.0% S-1000N38-N4T1x S-1000N38-M5T1x S-1000N38-I4T1x

3.9 V ± 1.0% S-1000N39-N4T1x S-1000N39-M5T1x S-1000N39-I4T1x

4.0 V ± 1.0% S-1000N40-N4T1x S-1000N40-M5T1x S-1000N40-I4T1x

4.1 V ± 1.0% S-1000N41-N4T1x S-1000N41-M5T1x S-1000N41-I4T1x

4.2 V ± 1.0% S-1000N42-N4T1x S-1000N42-M5T1x S-1000N42-I4T1x

4.3 V ± 1.0% S-1000N43-N4T1x S-1000N43-M5T1x S-1000N43-I4T1x

4.4 V ± 1.0% S-1000N44-N4T1x S-1000N44-M5T1x S-1000N44-I4T1x

4.5 V ± 1.0% S-1000N45-N4T1x S-1000N45-M5T1x S-1000N45-I4T1x

4.6 V ± 1.0% S-1000N46-N4T1x S-1000N46-M5T1x S-1000N46-I4T1x

Remark 1. x: G or U

2. Please select products of environmental code = U for Sn 100%, halogen-free products.

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Seiko Instruments Inc. 5

3. 2 CMOS output products

Table 2

Detection voltage range

SC-82AB SOT-23-5 SNT-4A

1.5 V ± 1.0% S-1000C15-N4T1x S-1000C15-M5T1x S-1000C15-I4T1x

1.6 V ± 1.0% S-1000C16-N4T1x S-1000C16-M5T1x S-1000C16-I4T1x

1.7 V ± 1.0% S-1000C17-N4T1x S-1000C17-M5T1x S-1000C17-I4T1x

1.8 V ± 1.0% S-1000C18-N4T1x S-1000C18-M5T1x S-1000C18-I4T1x

1.9 V ± 1.0% S-1000C19-N4T1x S-1000C19-M5T1x S-1000C19-I4T1x

2.0 V ± 1.0% S-1000C20-N4T1x S-1000C20-M5T1x S-1000C20-I4T1x

2.1 V ± 1.0% S-1000C21-N4T1x S-1000C21-M5T1x S-1000C21-I4T1x

2.2 V ± 1.0% S-1000C22-N4T1x S-1000C22-M5T1x S-1000C22-I4T1x

2.3 V ± 1.0% S-1000C23-N4T1x S-1000C23-M5T1x S-1000C23-I4T1x

2.4 V ± 1.0% S-1000C24-N4T1x S-1000C24-M5T1x S-1000C24-I4T1x

2.5 V ± 1.0% S-1000C25-N4T1x S-1000C25-M5T1x S-1000C25-I4T1x

2.6 V ± 1.0% S-1000C26-N4T1x S-1000C26-M5T1x S-1000C26-I4T1x

2.7 V ± 1.0% S-1000C27-N4T1x S-1000C27-M5T1x S-1000C27-I4T1x

2.8 V ± 1.0% S-1000C28-N4T1x S-1000C28-M5T1x S-1000C28-I4T1x

2.9 V ± 1.0% S-1000C29-N4T1x S-1000C29-M5T1x S-1000C29-I4T1x

3.0 V ± 1.0% S-1000C30-N4T1x S-1000C30-M5T1x S-1000C30-I4T1x

3.1 V ± 1.0% S-1000C31-N4T1x S-1000C31-M5T1x S-1000C31-I4T1x

3.2 V ± 1.0% S-1000C32-N4T1x S-1000C32-M5T1x S-1000C32-I4T1x

3.3 V ± 1.0% S-1000C33-N4T1x S-1000C33-M5T1x S-1000C33-I4T1x

3.4 V ± 1.0% S-1000C34-N4T1x S-1000C34-M5T1x S-1000C34-I4T1x

3.5 V ± 1.0% S-1000C35-N4T1x S-1000C35-M5T1x S-1000C35-I4T1x

3.6 V ± 1.0% S-1000C36-N4T1x S-1000C36-M5T1x S-1000C36-I4T1x

3.7 V ± 1.0% S-1000C37-N4T1x S-1000C37-M5T1x S-1000C37-I4T1x

3.8 V ± 1.0% S-1000C38-N4T1x S-1000C38-M5T1x S-1000C38-I4T1x

3.9 V ± 1.0% S-1000C39-N4T1x S-1000C39-M5T1x S-1000C39-I4T1x

4.0 V ± 1.0% S-1000C40-N4T1x S-1000C40-M5T1x S-1000C40-I4T1x

4.1 V ± 1.0% S-1000C41-N4T1x S-1000C41-M5T1x S-1000C41-I4T1x

4.2 V ± 1.0% S-1000C42-N4T1x S-1000C42-M5T1x S-1000C42-I4T1x

4.3 V ± 1.0% S-1000C43-N4T1x S-1000C43-M5T1x S-1000C43-I4T1x

4.4 V ± 1.0% S-1000C44-N4T1x S-1000C44-M5T1x S-1000C44-I4T1x

4.5 V ± 1.0% S-1000C45-N4T1x S-1000C45-M5T1x S-1000C45-I4T1x

4.6 V ± 1.0% S-1000C46-N4T1x S-1000C46-M5T1x S-1000C46-I4T1x

Remark 1. x: G or U

2. Please select products of environmental code = U for Sn 100%, halogen-free products.

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S-1000 Series Rev.3.0_00

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 Output Forms

1. Output forms in S-1000 series

Table 3

Nch open-drain output products

(Active “L”) CMOS output products

(Active “L”)

S-1000 series “N” is the last letter of the product name.

e.g. S-1000N “C” is the last letter of the product name.

e.g. S-1000C

2. Output form and their usag e

Table 4

Usage Nch open-drain output products

(Active “L”) CMOS output products

(Active “L”)

Different power supplies Yes No

Active “L” reset for CPUs Yes Yes

Active “H” reset for CPUs No No

Detection voltage change by resistor divider Yes No

•

Example for two power supplies

•

Example for one power supply

V / D

Nch V / D

Nch

V / D

CMOS

CPU CPU CPU

VDD1 V

DD2 V

DD V

OUT OUT OUT

VSS VSS VSS

Figure 3

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Rev.3.0_00 S-1000 Series

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 Pin Configurations

Table 5

Pin No. Pin name Pin description

1 OUT Voltage detection output pin

2 VDD Voltage input pin

3 NC*1 No connection

4 VSS GND pin

4 3

1 2

SC-82AB

Top view

1. The NC pin is electrically open.

The NC pin can be connected to VDD or VSS.

Figure 4

Table 6

Pin No. Pin name Pin description

1 OUT Voltage detection output pin

2 VDD Voltage input pin

3 VSS GND pin

4 NC*1 No connection

5 NC*1 No connection

SOT-23-5

Top view

5 4

3 2 1

1. The NC pin is electrically open.

The NC pin can be connected to VDD or VSS.

Figure 5

Table 7

Pin No. Pin name Pin description

1 OUT Voltage detection output pin

2 VSS GND pin

3 NC*1 No connection

4 VDD Voltage input pin

SNT-4A

Top view

1 4

2 3

1. The NC pin is electrically open.

The NC pin can be connected to VDD or VSS.

Figure 6

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S-1000 Series Rev.3.0_00

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 Absolute Maximum Ratings

Table 8 (Ta = 25 °C unless otherwise specified)

Item Symbol Absolute maximum ratings Unit

Power supply voltage VDD − VSS 6 V

Nch open-drain output products VSS − 0.3 to VSS + 6 V

Output voltage CMOS output products VOUT VSS − 0.3 to VDD + 0.3 V

Output current IOUT 50 mA

200 (When not mounted on board) mW

SC-82AB 350*1 mW

300 (When not mounted on board) mW

SOT-23-5 600*1 mW

Power dissipation

SNT-4A

300*1 mW

Operating ambient temperature Topr −40 to +85 °C

Storage temperature Tstg −40 to +125 °C

*1. When mounted on board

[Mounted board]

(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm

(2) Board name: JEDEC STANDARD51-7

Caution The absolute maximum ratings are rated values exceeding which the product could suffer physical

damage. These values must therefore not be exceeded under any conditions.

0 50 100 150

600

400

Power Dissi

ati on

(

)

[

]

Ambient Tem

erature

(

)

[

°C

]

200

100

300

500

700

-82AB

SNT-4

SOT-23-5

Figure 7 Power Dissipation of Package (When Mounted on Board)

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 Electrical Characteristics

1. Nch open-drain output products

Table 9 (Ta = 25 °C unless otherwise specified)

Item Symbol Condition Min. Typ. Max. Unit

Measure-

ment

circuit

Detection voltage*1 −VDET − −VDET(S)

×0.99 −VDET(S)

−VDET(S)

×1.01 V 1

Hysteresis width VHYS − −VDET

×0.03 −VDET

×0.05 −VDET

×0.07 V 1

VDD = −VDET(S) + 1.5 V S-1000N15 to 39 − 350 900 nA 2

Current consumption ISS VDD = 5.5 V S-1000N40 to 46 − 350 900 nA 2

Operating voltage VDD − 0.95 − 5.5 V 1

Output current IOUT Output transistor,

Nch, VDS = 0.5 V, VDD = 1.2 V 1.36 2.55 − mA 3

Leakage current I LEAK Output transistor,

Nch, VDS = 5.5 V, VDD = 5.5 V − − 100 nA 3

Response time tPLH − − − 60 μs 1

Detection voltage

temperature coefficient*2

Δ−V

DET

ΔTa•−V

DET

Ta = −40 to +85 °C − ±100 ±350 ppm /

°C 1

*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage

range in Table 1.)

*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.

[]

()

[]

1000C/ppm

VTa V

VTyp.VC/mV

DET

DET(S)

DET ÷°

−Δ

−

×−=°

−Δ

•

*1. Temperature change ratio of the detection voltage

*2. Specified detection voltage

*3. Detection voltage temperature coefficient

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2. CMOS output products Table 10 (Ta = 25 °C unless otherwise specified)

Item Symbol Condition Min. Typ. Max. Unit

Measure

ment

circuit

Detection voltage*1 −VDET − −VDET(S)

×0.99 −VDET(S)

−VDET(S)

×1.01 V 1

Hysteresis width VHYS − −VDET

×0.03 −VDET

×0.05 −VDET

×0.07 V 1

VDD = −VDET(S)+ 1.5 V S-1000C15 to 39 − 350 900 nA 2

Current consumption ISS VDD = 5.5 V S-1000C40 to 46 − 350 900 nA 2

Operating voltage VDD − 0.95 − 5.5 V 1

Output transistor,

Nch, VDS = 0.5 V, VDD = 1.2 V 1.36 2.55 − mA 3

Output current IOUT Output transistor,

Pch, VDS = 0.5 V, VDD = 5.5 V 1.71 2.76 − mA 4

Response time tPLH − − − 60 μs 1

Detection voltage

temperature coefficient*2

Δ−V

DET

ΔTa•−V

DET

Ta = −40 to +85 °C − ±100 ±350 ppm/

°C 1

*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage

range in Table 2.)

*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.

[]

()

[]

1000C/ppm

VTa V

VTyp.VC/mV

DET

DET(S)

DET ÷°

−Δ

−

×−=°

−Δ

•

*1. Temperature change ratio of the detection voltage

*2. Specified detection voltage

*3. Detection voltage temperature coefficient

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 Measurement Circuits

S-1000

Series

VDD

VSS

OUT

R*1

100 kΩ

1. R is unnecessary for CMOS output products.

Figure 8

S-1000

Series

VDD

VSS

OUT

Figure 9

S-1000

Series

VDS

VDD

VSS

OUT

V A

Figure 10

S-1000

Series

VDD

VDS

VDD

VSS

OUT

V A

Figure 11

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 Timing Chart

1. Nch open-drain output products

OUT

VDD

VSS

100 kΩ

Release voltage (+VDET)

Detection voltage (−VDET)

VDD

VSS

Minimum operating voltage

Output from the OUT pin

Hysteresis width (VHYS)

VDD

VSS

Figure 12

2. CMOS output products

OUT

VDD

VSS

Release voltage (+VDET)

Detection voltage (−VDET)

VDD

VSS

Minimum operating voltage

Hysteresis width (VHYS)

Output from the OUT pin

VSS

VDD

Remark For values of VDD less than minimum operating voltage, values of OUT terminal output is free in the shaded region.

Figure 13

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 Operation

1. Basic operation: CMOS output (Active “L”)

(1) When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch transistor is OFF and the

Pch transistor is ON to provide VDD (“H”) at the output. Since the Nch transistor N1 in Figure 14 is OFF, the

comparator input voltage is CBA

DDCB RRR V)RR(

•+ .

(2) When the VDD goes below +VDET, the output provides the VDD level, as long as the VDD remains above the detection

voltage −VDET. When the VDD falls below −VDET (point A in Figure 15), the Nch transistor becomes ON, the Pch

transistor becomes OFF, and the VSS level appears at the output. At this time the Nch transistor N1 in Figure 14

becomes ON, the comparator input voltage is changed to BA

DDB RR VR

•.

(3) When the VDD falls below the minimum operating voltage, the output becomes undefined, or goes to the VDD when the

output is pulled up to the VDD.

(4) The VSS level appears when the VDD rises above the minimum operating voltage. The VSS level still appears even

when the VDD surpasses −VDET, as long as it does not exceed the release voltage +VDET.

(5) When the VDD rises above +VDET (point B in Figure 15), the Nch transistor becomes OFF and the Pch transistor

becomes ON to provide VDD level at the output .

REF

Pch

Nch

−

OUT

VSS

VDD

*1. Parasiteic diode

Figure 14 Operation 1

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Hysteresis width (V

HYS

)

Minimum op er at ing volt age

Output f ro m the OUT pi n

(1) (2) (3) (5) (4)

Release voltage (+V

DET

)

Detection vol tag e (−V

DET

)

Figure 15 Operation 2

2. Other characteristics

2. 1 Temperature characteristics of detection voltage

The shaded area in Figure 16 shows the temperature characteristics of the detection voltage.

−

40 25

0.945 mV/°C

−VDET [V]

85 Ta [°C]

−

0.945 mV/°C

−VDET25

*1. −VDET25 is an actual detection voltage value at 25°C.

Figure 16 Temperature ch aracteristics of detection voltage (Example for −VDET = 2.7 V)

2. 2 Temperature characteristics of release voltage

The temperature change Ta

VDET

+Δ of the release voltage is calculated by the temperature change Ta

VDET

−Δ of the

detection voltage as follows:

VDET

DET

DETDET

−Δ

−

+Δ

The temperature changes of the release voltage and the detection voltage have the same sign consequently.

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2. 3 Temperature characteristics of hysteresis voltage

The temperature changes of the hysteresis voltage is expressed as Ta

VDETDET

−Δ

−

+Δ and is calculated as

follows:

VDET

DET

HYSDETDET

−Δ

−

−Δ

−

+Δ

 Standard Circuit

VDD

OUT

VSS

R*1

100 kΩ

*1. R is unnecessary for CMOS output products. Figure 17

Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient

evaluation using the actual application to set the constants.

 Explanation of Terms

1. Detection voltage (−VDET), release voltage (+VDET)

The detection voltage (−VDET) is a voltage at which the output turns to “L”. The detection voltage varies slightly among

products of the same specification. The variation of detection voltage between the specified minimum (−VDET) Min. and the

maximum (−VDET) Max. is called the detection voltage range (Refer to Figure 18).

Example: For the S-1000C15, the det ection voltage lies in the range of 1.485 ≤ (−VDET) ≤ 1.515.

This means that some S-1000C15s have 1.485 V for −VDET and some have 1.515 V.

The release voltage is a voltage at which the output turns to “H”. The release voltage varies slightly among product s of

the same specification. The variation of release voltages between the specified minimum (+VDET) Min. and the maximum

(+VDET) Max. is called the release voltage range (Refer to Figure 19). The range is calculed from the actual detection

voltage (−VDET) of a product and is expressed by −VDET × 1.03 ≤ +VDET ≤ −VDET × 1.07.

Example: For the S-1000C15, the release volt age lies in the range of 1.530 ≤ (+VDET) ≤ 1.621.

This means that some S-1000C15s have 1.530 V for +VDET and some have 1.621 V.

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Detection voltage range

Detection voltage

(−V

DET

) Min.

(−V

DET

) Max.

OUT

Release voltage

Release voltag e ran ge

(+V

DET

) Min.

(+V

DET

) Max.

OUT

Figure 18 Detection voltage (CMOS output products) Figure 19 Release voltage (CMOS output products)

2. Hysteresis widt h (VHYS)

The hysteresis width is the voltage difference betw een the detection voltage and the release voltage (The voltage at point

B − The voltage at point A = VHYS in Figure 15). The existence of the hysteresis width prevents malfunction caused by

noise on input signal.

3. Through-type current

The through-type current refers to the current that flow s instantaneously at the time of detection and release of a voltage

detector. The through-type current is large in CMOS output products, small in Nch open-drain output products.

4. Oscillation

In applications where a resistor is connected to the voltage detector input (Figure 20), taking a CMOS active “L” product

for example, the through-type current w hich is generated when the output goes from “L” to “H” (release) causes a voltage

drop equal to [through-type current] × [input resistance] across the resistor. When the input voltage drops below the

detection voltage (−VDET) as a result, the output voltage goes to low level. In this state, the through-type current stops

and its resultant voltage drop disappears, and the output goes from “L” to “H”. The through-type current is then

generated again, a voltage drop appears, and repeating the process finally induces oscillation.

OUT

VSS

VDD

S-1000C

Figure 20 An example for bad implementation of input voltage divider

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Rev.3.0_00 S-1000 Series

Seiko Instruments Inc. 17

 Precautions

• If the input impedance is high, oscillation may occur due to the through-type current etc. In COMS output products,

impedance should not be connected to the input pin. In Nch open drain output products, input impedance is

recommended to be 800 Ω or less. However be sure to perform sufficient evaluation under the actual usage conditions for

selection, including evaluation of temperature characteristics.

• In CMOS output products oscillation may occur when a pull-down resistor is used, and falling speed of the power supply

voltage (VDD) is slow near the detection voltage.

• When designing for mass production using an application circuit described herein, the product deviation and temperature

characteristics should be taken into consideration. SII shall not bear any responsibility for the products on the circuits

described herein.

• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic

protection circuit.

• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of the products

including this IC upon patents owned by a third party.

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

S-1000 Series Rev.3.0_00

18 Seiko Instruments Inc.

 Typical Characteristics (Typical Data)

1. Detection voltage (VDET) − temperature (Ta)

-40 -20 0 20 40 60 80

1.59

DET

[V]

1.58

1.57

1.56

1.55

1.54

1.53

1.52

1.50

1.49

S-1000C15

Ta [

°C

]

+VDET

-VDET

-40 -20 020406080

4.85

4.80

4.75

4.70

4.65

4.60

4.55

4.50

4.45

4.40

VDET [V]

S-1000C46

Ta [

°C

]

-V

DET

2. Hysteresis voltage width − (VHYS) - temperature (Ta)

-40 -20 0 20 40 60 80

8.0

7.0

6.0

5.0

4.0

3.0

HYS

[%]

S-1000C15

Ta [

°C

]

-40 -20 0 20 40 60 80

8.0

7.0

6.0

5.0

4.0

3.0

VHYS [%]

S-1000C46

Ta [

°C

]

3. Current consumption (ISS) − input voltage (VDD)

0 2.01.0 3.0

4.0 5.0 6.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

[μA]

S-1000C15

[V]

Ta = 25

°C

0 2.0

1.0 3.0 4.0 5.0 6.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

[μA]

S-1000C46

[V]

Ta = 25

°C

4. Current consumption (ISS) − temperature (Ta)

-40 -20 0 20 40 60 80

0.8

0.6

0.4

0.2

0.0

[μA]

S-1000C15 V

= 3.0 V

Ta [

°C

]

-40 -20 0 20 40 60 80

0.8

0.6

0.4

0.2

0.0

[μA]

S-1000C46 V

= 5.5 V

Ta [

°C

]

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Rev.3.0_00 S-1000 Series

Seiko Instruments Inc. 19

5. Nch transistor output current (IOUT) − VDS 6. Pch transistor output current (IOUT) − VDS

1.0 2.0 3.0 4.0

OUT

[mA]

20.0

15.0

10.0

5.0

00V

[V]

Ta = 25

°C

S-1000C46 / S-1000N46

= 3.6 V

= 2.4 V

= 1.2 V

= 1.0 V

OUT

[mA]

20.0

15.0

10.0

5.0

00V

[V]

Ta = 25

°C

S-1000C15

1.0 2.0 3.0 4.0

= 4.6 V

= 3.6 V

= 2.4 V

= 1.9 V

7. Nch transistor output current (IOUT) 8. Pch transistor output current (IOUT)

OUT

[mA]

8.0

6.0

4.0

2.0

S-1000C46 / S-1000N46

1.0 2.0 3.0 4.0 5.0

[V]

= 0.5 V

Ta = -40

°C

Ta = 25

°C

Ta = 85

°C

IOUT [mA]

4.0

3.0

2.0

1.0

00VDD [V]

VDS = 0.5 V

S-1000C15

2.0 4.0 6.0 8.0

Ta = -40

°C

Ta = 25

°C

Ta = 85

°C

9. Minimum operating voltage - input voltage (VDD)

OUT

[V]

0.8

0.6

0.4

0.2

S-1000N15

0.2 0.4 0.6 0.8 1.0

[V]

Pull-up to V

Pull-up resistance

: 100 kΩ

Ta = -40

°C

Ta = 25

°C

Ta = 85

°C

VOUT [V]

2.0

2.5

3.0

1.5

1.0

0.5

000.5 1.0 1.5 2.0 2.5

[V]

Pull-up to 3.0 V

Pull-up resistance

: 100 kΩ

S-1000N15

Ta = -40

°C

Ta = 25

°C

Ta = 85

°C

OUT

[V]

0.8

0.6

0.4

0.2

000.2 0.4 0.6 0.8 1.0

[V]

S-1000N46 Pull-up to V

Pull-up resistance

: 100 kΩ

Ta = -40

°C

Ta = 25

°C

Ta = 85

°C

OUT

[V]

6.0

5.0

4.0

3.0

2.0

1.0

001.0 2.0 3.0 4.0 5.0

[V]

S-1000N46 Pull-up to 5.5 V

Pull-up resistance

: 100 kΩ

Ta = -40

°C

Ta = 25

°C

Ta = 85

°C

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

S-1000 Series Rev.3.0_00

20 Seiko Instruments Inc.

VOUT(V)

PULL-UP

0.1

0 VDD(V)

VDDmin

1.0 2.0 2.5

1.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0.60

DDmin

[V]

0.55

0.50

0.45

0.40

0.35

0.30

Pull-up [V]

S-1000N15 Pull-up resistance

: 100 kΩ

Ta = -40

°C

Ta = 25

°C

Ta = 85

°C

Remark VDDmin. is defined by the VDD voltage at which VOUT

goes below 10% of pull-up voltage when the VDD

increase from 0 V.

1.0 2.0 2.51.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

0.60

DDmin

[V]

0.55

0.50

0.45

0.40

0.35

0.30

Pull-up [V]

Pull-up resistance

: 100 kΩ

S-1000N46

Ta = 85

°C

Ta = 25

°C

Ta = -40

°C

Figure 21

10. Dynamic response - COUT

0.0001 0.001 0.01 0.1

Response time [ms]

Load capacitance [μF]

Ta = 25

°C

S-1000N15 Pull-up to VDD

Pull-up resistance : 100 kΩ

0.00001

0.01

0.001

0.1

100

tPLH

tPHL

0.00001 0.0001 0.001

0.01

0.001

0.1

0.01 0.1

Response time [ms]

Load capacitance [μF]

Ta = 25

°C

S-1000C15

tPLH

tPHL

0.00001 0.0001 0.001

0.01

0.001

0.1

0.01 0.1

Response time [ms]

Load capacitance [μF]

Ta = 25

°C

Pull-up to V

Pull-up resistance

: 100 kΩ

100 t

PLH

PHL

S-1000N46

0.00001 0.0001 0.001

0.01

0.001

0.1

0.01 0.1

Response time [ms]

Load capacitance [μF]

Ta = 25

°C

S-1000C46

PLH

PHL

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Rev.3.0_00 S-1000 Series

Seiko Instruments Inc. 21

OUT

VSS

VDD

S-1000

Series

100 kΩ

OUT

*1. R is unnecessary for CMOS output products.

Figure 23 Measurement circuit for response time

VIH

Output voltage

Input voltagae

VIL

VDD

tPHL tPLH

VIH = 5.5 V, VIL = 0.95 V

1 μs

VDD × 10%

VDD × 90%

Figure 22 Measurement condition for response time

Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient

evaluation using the actual application to set the constants.

 Application Circuit Examples

1. Microcomputer reset circuits

If the power supply voltage to a microcomputer falls below the specified level, an unspecified operation may be

performed or the contents of the memory register may be lost. When power supply voltage returns to normal, the

microcomputer needs to be initialized before normal operations can be done.

Reset circuits protect microcomputers in the event of current being momentarily switched off or lowered.

Reset circuits shown in Figures 24, 25 can be easily constructed with the help of the S-1000 series, that has low

operating voltage, a high-precision detection voltage and hysteresis.

VSS

VDD

Microcomputer

S-1000C

VSS

(Only for Nch open-drai n products)

VDD1 VDD2

Microcomputer

S-1000N

Figure 24 Reset circuit example(S-1000C) Figure 25 Reset circuit examp l e (S-1000N)

Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient

evaluation using the actual application to set the constants.

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

S-1000 Series Rev.3.0_00

22 Seiko Instruments Inc.

2. Power-on reset circuit

A power-on reset circuit can be constructed using Nch open-drain output product of S-1000 Series.

(N c h open-dr ain products)

OUT

VIN

VSS

VDD

S-1000N

R*1

C*1

Di*2

*1. R should be 75 kΩ or less, and C should be 0.01 μF or more to prevent oscillation.

If C is not connected, R should be 800 Ω or less.

*2. Diode Di instantaneously discharges the charge stored in the capacitor (C) at the power falling, Di can be removed

when the delay of the falling time is not important.

Figure 26

VDD

(V)

t (s)

OUT

(V)

t (s)

Figure 27

Remark When the power rises sharply as shown in the Figure 28 left, the output may go to the high level for an instant

in the undefined region where the output voltage is undefined since the pow er voltage is less than the minimum

operation voltage.

VDD

(V)

t (s)

OUT

(V)

t (s)

Figure 28

Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient

evaluation using the actual application to set the constants.

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Rev.3.0_00 S-1000 Series

Seiko Instruments Inc. 23

3. Change of detection voltage

In Nch open-drain output products of the S-1000 series, detection voltage can be changed using resistance dividers or

diodes as shown in Figures 29 to 30. In Figure 29, hysteresis width also changes.

(Nch open-drain

output products)

A*1

OUT

VIN

VSS

VDD

−

S-1000N

DET

BA V

RRR

voltagae Detection −•

HYS

BA V

RRR

widthHysterisis •

(Nch open-drain

output product)

OUT

VIN

VSS

VDD

S-1000N

Detection voltage = Vf1+Vf2+(−VDET)

Figure 30

*1. RA should be 75 kΩ or less, and C should be 0.01 μF

or more to prevent oscillation.

If C is not connected, RA should be 800 Ω or less.

Caution If RA and RB are large, the hysteresis width

may also be larger than the value given by

the above equation due to the through-type

current (which flows slightly in an Nch

open-drain product).

Figure 29

Caution The above connection diagram and constants do not guarantee correct operation. Perform sufficient

evaluation using the actual application to set the constants.

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

S-1000 Series Rev.3.0_00

24 Seiko Instruments Inc.

 Marking Specifications

(1) SC-82AB

(1) to (3) : Product code (refer to Product name vs. Product code)

SC-82AB

Top view

(1) (2) (3)

1 2

4 3

Product name vs. Product code

(a) Nch open-drain output products

Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1000N15-N4T1x P L A S-1000N31-N4T1x P L Q

S-1000N16-N4T1x P L B S-1000N32-N4T1x P L R

S-1000N17-N4T1x P L C S-1000N33-N4T1x P L S

S-1000N18-N4T1x P L D S-1000N34-N4T1x P L T

S-1000N19-N4T1x P L E S-1000N35-N4T1x P L U

S-1000N20-N4T1x P L F S-1000N36-N4T1x P L V

S-1000N21-N4T1x P L G S-1000N37-N4T1x P L W

S-1000N22-N4T1x P L H S-1000N38-N4T1x P L X

S-1000N23-N4T1x P L I S-1000N39-N4T1x P L Y

S-1000N24-N4T1x P L J S-1000N40-N4T1x P L Z

S-1000N25-N4T1x P L K S-1000N41-N4T1x P L 2

S-1000N26-N4T1x P L L S-1000N42-N4T1x P L 3

S-1000N27-N4T1x P L M S-1000N43-N4T1x P L 4

S-1000N28-N4T1x P L N S-1000N44-N4T1x P L 5

S-1000N29-N4T1x P L O S-1000N45-N4T1x P L 6

S-1000N30-N4T1x P L P S-1000N46-N4T1x P L 7

(b) CMOS output products Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1000C15-N4T1x P K A S-1000C31-N4T1x P K Q

S-1000C16-N4T1x P K B S-1000C32-N4T1x P K R

S-1000C17-N4T1x P K C S-1000C33-N4T1x P K S

S-1000C18-N4T1x P K D S-1000C34-N4T1x P K T

S-1000C19-N4T1x P K E S-1000C35-N4T1x P K U

S-1000C20-N4T1x P K F S-1000C36-N4T1x P K V

S-1000C21-N4T1x P K G S-1000C37-N4T1x P K W

S-1000C22-N4T1x P K H S-1000C38-N4T1x P K X

S-1000C23-N4T1x P K I S-1000C39-N4T1x P K Y

S-1000C24-N4T1x P K J S-1000C40-N4T1x P K Z

S-1000C25-N4T1x P K K S-1000C41-N4T1x P K 2

S-1000C26-N4T1x P K L S-1000C42-N4T1x P K 3

S-1000C27-N4T1x P K M S-1000C43-N4T1x P K 4

S-1000C28-N4T1x P K N S-1000C44-N4T1x P K 5

S-1000C29-N4T1x P K O S-1000C45-N4T1x P K 6

S-1000C30-N4T1x P K P S-1000C46-N4T1x P K 7

Remark 1. Please contact our sales office for products with specifications other than the above.

2. x: G or U

3. Please select products of environmental code = U for Sn 100%, halogen-free products.

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

Rev.3.0_00 S-1000 Series

Seiko Instruments Inc. 25

(2) SOT-23-5

(1) to (3) : Product code (refer to Product name vs. Product code)

(4) : Lot number

5 4

1 3

(1) (2) (3) (4)

SOT-23-5

Top view

Product name vs. Product code

(a) Nch open-drain output products

Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1000N15-M5T1x P L A S-1000N31-M5T1x P L Q

S-1000N16-M5T1x P L B S-1000N32-M5T1x P L R

S-1000N17-M5T1x P L C S-1000N33-M5T1x P L S

S-1000N18-M5T1x P L D S-1000N34-M5T1x P L T

S-1000N19-M5T1x P L E S-1000N35-M5T1x P L U

S-1000N20-M5T1x P L F S-1000N36-M5T1x P L V

S-1000N21-M5T1x P L G S-1000N37-M5T1x P L W

S-1000N22-M5T1x P L H S-1000N38-M5T1x P L X

S-1000N23-M5T1x P L I S-1000N39-M5T1x P L Y

S-1000N24-M5T1x P L J S-1000N40-M5T1x P L Z

S-1000N25-M5T1x P L K S-1000N41-M5T1x P L 2

S-1000N26-M5T1x P L L S-1000N42-M5T1x P L 3

S-1000N27-M5T1x P L M S-1000N43-M5T1x P L 4

S-1000N28-M5T1x P L N S-1000N44-M5T1x P L 5

S-1000N29-M5T1x P L O S-1000N45-M5T1x P L 6

S-1000N30-M5T1x P L P S-1000N46-M5T1x P L 7

(b) CMOS output products Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1000C15-M5T1x P K A S-1000C31-M5T1x P K Q

S-1000C16-M5T1x P K B S-1000C32-M5T1x P K R

S-1000C17-M5T1x P K C S-1000C33-M5T1x P K S

S-1000C18-M5T1x P K D S-1000C34-M5T1x P K T

S-1000C19-M5T1x P K E S-1000C35-M5T1x P K U

S-1000C20-M5T1x P K F S-1000C36-M5T1x P K V

S-1000C21-M5T1x P K G S-1000C37-M5T1x P K W

S-1000C22-M5T1x P K H S-1000C38-M5T1x P K X

S-1000C23-M5T1x P K I S-1000C39-M5T1x P K Y

S-1000C24-M5T1x P K J S-1000C40-M5T1x P K Z

S-1000C25-M5T1x P K K S-1000C41-M5T1x P K 2

S-1000C26-M5T1x P K L S-1000C42-M5T1x P K 3

S-1000C27-M5T1x P K M S-1000C43-M5T1x P K 4

S-1000C28-M5T1x P K N S-1000C44-M5T1x P K 5

S-1000C29-M5T1x P K O S-1000C45-M5T1x P K 6

S-1000C30-M5T1x P K P S-1000C46-M5T1x P K 7

Remark 1. Please contact our sales office for products with specifications other than the above.

2. x: G or U

3. Please select products of environmental code = U for Sn 100%, halogen-free products.

ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR

S-1000 Series Rev.3.0_00

26 Seiko Instruments Inc.

(3) SNT-4A

(1) to (3) : Product code (refer to Product name vs. Product code)

SNT-4A

Top view

(1) (2) (3)

Product name vs. Product code

(a) Nch open-drain output products

Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1000N15-I4T1x P L A S-1000N31-I4T1x P L Q

S-1000N16-I4T1x P L B S-1000N32-I4T1x P L R

S-1000N17-I4T1x P L C S-1000N33-I4T1x P L S

S-1000N18-I4T1x P L D S-1000N34-I4T1x P L T

S-1000N19-I4T1x P L E S-1000N35-I4T1x P L U

S-1000N20-I4T1x P L F S-1000N36-I4T1x P L V

S-1000N21-I4T1x P L G S-1000N37-I4T1x P L W

S-1000N22-I4T1x P L H S-1000N38-I4T1x P L X

S-1000N23-I4T1x P L I S-1000N39-I4T1x P L Y

S-1000N24-I4T1x P L J S-1000N40-I4T1x P L Z

S-1000N25-I4T1x P L K S-1000N41-I4T1x P L 2

S-1000N26-I4T1x P L L S-1000N42-I4T1x P L 3

S-1000N27-I4T1x P L M S-1000N43-I4T1x P L 4

S-1000N28-I4T1x P L N S-1000N44-I4T1x P L 5

S-1000N29-I4T1x P L O S-1000N45-I4T1x P L 6

S-1000N30-I4T1x P L P S-1000N46-I4T1x P L 7

(b) CMOS output products Product Code Product Code

Product Name (1) (2) (3) Product Name (1) (2) (3)

S-1000C15-I4T1x P K A S-1000C31-I4T1x P K Q

S-1000C16-I4T1x P K B S-1000C32-I4T1x P K R

S-1000C17-I4T1x P K C S-1000C33-I4T1x P K S

S-1000C18-I4T1x P K D S-1000C34-I4T1x P K T

S-1000C19-I4T1x P K E S-1000C35-I4T1x P K U

S-1000C20-I4T1x P K F S-1000C36-I4T1x P K V

S-1000C21-I4T1x P K G S-1000C37-I4T1x P K W

S-1000C22-I4T1x P K H S-1000C38-I4T1x P K X

S-1000C23-I4T1x P K I S-1000C39-I4T1x P K Y

S-1000C24-I4T1x P K J S-1000C40-I4T1x P K Z

S-1000C25-I4T1x P K K S-1000C41-I4T1x P K 2

S-1000C26-I4T1x P K L S-1000C42-I4T1x P K 3

S-1000C27-I4T1x P K M S-1000C43-I4T1x P K 4

S-1000C28-I4T1x P K N S-1000C44-I4T1x P K 5

S-1000C29-I4T1x P K O S-1000C45-I4T1x P K 6

S-1000C30-I4T1x P K P S-1000C46-I4T1x P K 7

Remark 1. Please contact our sales office for products with specifications other than the above.

2. x: G or U

3. Please select products of environmental code = U for Sn 100%, halogen-free products.

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

0.3 +0.1

-0.05

0.4 +0.1

-0.05

0.05

0.16+0.1

-0.06

1.3±0.2

2.0±0.2

No. NP004-A-P-SD-1.1

SC82AB-A-PKG Dimensions

NP004-A-P-SD-1.1

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

1.1±0.1

0.2±0.05

4.0±0.1

2.0±0.05

4.0±0.1

2.2±0.2

(0.7)

No. NP004-A-C-SD-3.0

NP004-A-C-SD-3.0

SC82AB-A-Carrier Tape

Feed direction

ø1.05±0.1

ø1.5 +0.1

-0

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

No. NP004-A-C-S1-2.0

NP004-A-C-S1-2.0

SC82AB-A-Carrier Tape

4.0±0.1 2.0±0.1

4.0±0.1 ø1.05±0.1

0.2±0.05

1.1±0.1

Feed direction

2.3±0.15

ø1.5 +0.1

-0

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

QTY. 3,000

(60°)

ø13±0.2

12.5max.

9.0±0.3

No. NP004-A-R-SD-1.1

NP004-A-R-SD-1.1

SC82AB-A-Reel

Enlarged drawing in the central part

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

2.9±0.2

1.9±0.2

0.95±0.1

0.4±0.1

0.16 +0.1

-0.06

123

No. MP005-A-P-SD-1.2

MP005-A-P-SD-1.2

SOT235-A-PKG Dimensions

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

ø1.5 +0.1

-0 2.0±0.05

ø1.0 +0.2

-0 4.0±0.1

1.4±0.2

0.25±0.1

3.2±0.2

123

No. MP005-A-C-SD-2.1

MP005-A-C-SD-2.1

SOT235-A-Carrier Tape

Feed direction

4.0±0.1(10 pitches:40.0±0.2)

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

12.5max.

9.0±0.3

ø13±0.2

(60°) (60°)

QTY. 3,000

No. MP005-A-R-SD-1.1

MP005-A-R-SD-1.1

SOT235-A-Reel

Enlarged drawing in the central part

1.2±0.04

0.65

0.2±0.05

0.48±0.02

0.08

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

SNT-4A-A-PKG Dimensions

PF004-A-P-SD-4.0

No. PF004-A-P-SD-4.0

+0.05

-0.02

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

PF004-A-C-SD-1.0

SNT-4A-A-Carrier Tape

Feed direction

4.0±0.1

2.0±0.05

4.0±0.1

ø1.5 +0.1

-0

ø0.5

1.45±0.1 0.65±0.05

0.25±0.05

5°

No. PF004-A-C-SD-1.0

+0.1

-0

12.5max.

9.0±0.3

ø13±0.2

(60°) (60°)

QTY. 5,000

No. PF004-A-R-SD-1.0

PF004-A-R-SD-1.0

Enlarged drawing in the central part

No.

TITLE

SCALE

UNIT mm

Seiko Instruments Inc.

SNT-4A-A-Reel

No.

TITLE

SCALE

UNIT mm

SNT-4A-A-Land Recommendation

Seiko Instruments Inc.

PF004-A-L-SD-3.0

No. PF004-A-L-SD-3.0

0.3

0.35

0.3

0.52

1.16

0.52

Caution Making the wire pattern under the package is possible. However, note that the package

may be upraised due to the thickness made by the silk screen printing and of a solder

resist on the pattern because this package does not have the standoff.

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examples explain typical applications of the products, and do not guarantee the success of any specific

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failure or malfunction of semiconductor products may occur. The user of these products should therefore

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