Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions (RFIS) business unit RF & microwave diodes and power transistors. RFIS diode products are primarily designed, manufactured, and tested at our Lowell Massachusetts facility and the power transistors are primarily designed, manufactured, and tested at our Santa Clara California facility. For sales and technical assistance consult our website, manufacturer's representative or distributor in your area, or contact the appropriate organization directly: Diode Products: Power Transistor Products: Microsemi Corporation Microsemi Corporation RF Integrated Solutions RF Integrated Solutions 75 Technology Drive 3000 Oakmead Village Drive Lowell, MA 01851-5293 Santa Clara, CA 95051-0808 +1.978.442.5600 +1.408.986.8031 +1.978.937.3748 +1.408.986.8120 www.microsemi.com email: sales.support@microsemi.com 2 Table of Contents Diode Products Power Transistor Products Overview: Diode Products 4 About RF & Microwave Power Transistor Products 26-27 PIN Diodes Selection Guide 5 GaN & SiC & SiC Wide Band Gap 28 Power Handling Reference 6 Pulsed High Power Pallets 29 GC4200 Series: Small Signal/High Speed Switching 7 Pulsed Primary Radar 30-31 GC4400 Series: Large Signal Switching/Attenuator 7 Avionics 32-33 GC4700 Series: Limiter PIN Diodes 8 High Reliability Transistorsb 34-35 GC4800 Series: Planar Beam Lead PIN's 8 HF/VHF/UHF Communications 36-37 GC4900 Series: Mesa Beam Lead PINs 8 Broadcast / TV 38 SM Ceramic MELF PINs 9 Microwave 38 RoHS and MRI Models 9 General Purpose & Small Signal 39 Monolithic Microwave Surface Mount PIN Diodes 10 Linear Class A & AB 40 MRI PIN Diode Selector Guide 11 Bias Devices 40 Power PIN Diodes for Switching and Attenuation 12 Transistor Case Styles Schottky Diodes Selector Guide 13 Enhanced Performance Surface Mount Products 14 Varactor Performance Guide 15 Tuning Varactor Selector Guide 16 MMSM Varactor Diodes 17 GaAs Varactor Diodes 18 Gunn Diodes 19 Comb Generators 20 Surface Mount Limiter 20 Pin Diode Limiter Assemblies 21 Switch Components 22 RF, Microwave & mmWave Packages 41-42 23-25 3 RF & Microwave Diode and Control Components Microsemi's RF diode and control component operations, located in Lowell, Massachusetts, brings over 30 years experience in manufacturing of high reliability RF and microwave products. We supply a full range of Silicon and Gallium Arsenide diodes, including PIN and limiter diodes, tuning and multiplier varactors, noise diodes, Schottky-barrier diodes, MNS chip capacitors and Gunn Diodes. We are able to leverage these best in class products in our solid state control components and sensor products. Our extensive product base allows us to support frequencies from 100 Hz through millimeter wave. With high volume wafer fabrication now in place to meet the competitive needs of our growing commercial and medical customer base, Microsemi's Lowell facility can deliver more cost-effective components faster than ever for our longstanding military customers as well. From our closely controlled RF/microwave diode inventory we can match characteristics precisely to maintain consistent component performance levels over the full life of your system designs. Our Lowell operation builds RF and microwave PIN diode switches, limiters, comb generators, attenuators, phase shifters, and detectors in frequency ranges to 40 GHz. All can be hermetically sealed to meet the most stringent military or space requirements and can be combined to include several functions in a single high reliability package. Typical of these integrated packages are switch/limiters, limiter/detectors, switch matrices and switched filters.. Integrated packages can provide higher performance benefits at lower cost than by designing with individual components. To assure the engineering expertise that will attain your desired performance levels, Microsemi only provides assemblies where we can control the high-risk components. In that way, we're able to develop custom packaging that meets your most demanding specifications. 4 In addition, we are continuing to develop low cost surface mount PIN and Limiter solutions which offer performance more often associated with expensive chip and wire bonding assemblies. They are available in several reflow friendly configurations which allow the customer new opportunities for economical designs. Microsemi also can offer a significant number of existing configurations to minimize your NRE and provides many customers with microwave components no longer available from their original suppliers. Our extensive library of products and designs gives us the ability to respond quickly with solutions to meet your needs, quickly and cost effectively. PIN Diodes * Microsemi has a wide variety of GaAs and Silicon PIN diodes to suit your requirements * From ultra-low Cj, Beam Lead PIN diodes for broadband switching to high power PIN diodes * Designed for low frequency, low intermod switching and attenuation PIN Diode Selection Guide HIGH SPEED MICROWAVE SWITCHING: Chips & Beam Leaded Typical Cj (@Vpt) (pF) 0.01 0.03 0.06 0.1 0.2 0.50 0.75 Max Freq (GHz) 40 24 18 12 8 4 2 40V 50V MP6250 GC4946 MPP4203 70V/75V 100V GC4270 GC4271 GC4272 GC4273 GC4275 GC4801 GC4210 GC4211 GC4212 GC4213 GC4215 250V Outline MP61001 GaAs Chip Beam Leads / GaAs Flip Chip Chips Chips GC4220 GC4221 GC4222 GC4223 GC4225 Chips / MMSMTM Chips Chips HIGH SPEED MICROWAVE SWITCHING: Packaged Typical CT (@Vpt) (pF) 0.02 0.03 0.06 0.1 0.2 0.50 0.75 1.2 Max Freq (GHz) 40 24 18 12 8 4 2 1 25V 40V/50V 70V/75V 100V 200V/250V Pkg Type MP61001 Flip Chip GaAs Ceramic GaAs Ceramic / GaAs MP6250 MPP4203 MPP4204 MP61004 GC4270 GC4210 GC4220 GMP4201 GMP4211 GC4221 GMP4202 GMP4212 GC4222 GC4273 GMP4215 GMP4235 GC4275 GC4215 GC4225 Ceramic / MMSMTM Ceramic / GigaMite Ceramic / GigaMite / EPSM Ceramic / GigaMite / EPSM Ceramic / GigaMite / EPSM MED - HIGH POWER RF SWITCHING & ATTENUATION: CHIPS Max Freq (GHz) Typical Cj (@Vpt) (pF) 18 12 8 4 2 1 0.5 0.1 0.2 0.5 1 2 4.0 100V 300V GC4410 GC4411 GC4412 GC4413 GC4430 GC4431 GC4432 GC4433 500V 750V GC4490 GC4491 GC4492 GC4493 GC4494 1500V Outline GC4600 GC4601 Chips Chips Chips Chips Chips Chips MED - HIGH POWER RF SWITCHING & ATTENUATION: Packaged Max Freq (GHz) 12 8 4 2 1 0.5 Typical CT (@Vpt) (pF) 0.2 0.5 1 2 4.0 100V 300V GC4410 GC4430 GC4411 GC4431 GC4413 GC4433 UM4301 500V SM0502 SM0509 600V 750V 1000V 1500V 2000V Pkg Type GC4490 Ceramic UM6006 GC4491 Ceramic UM6606 GC4493 GC4600 Ceramic/MELF/Leaded/Stud UM4306 UM4310 GC4601 Ceramic/MELF/Leaded/Stud HUM2010 HUM2015 HUM2020 Ceramic/MELF/Leaded/Stud 5 PIN Diodes PIN Diode Power Handling Typical PIN Diode Power Handling (CW) Frequency Band (GHz) 0.1-0.5 0.5-1.0 0.5-1.0 HUM PIN Family Series UM / HUM PIN Family GC4600 Series Series Typ. Junction 4 pF Capacitance Typ. Junction 4 pF 2 pF Capacitance Incident Power OK Incident Power +60 dBm 1.0-2.0 UM / GC4600 UM / Series GC4600 GC4700 Series 2 pF 0.1-0.5 +60 dBm +50OK dBm OK MARGINAL 1 pF 1.0-2.0 2.04.0 Frequency Band (GHz) UM4.0 / GC4400 2.04.0-12 GC4600 GC4200 GC4400 GC4400 GC4700 GC4700 GC4200 GC4200 Series Series GC4700 GC4700 Series Series 1 pF 0.5 pF 0.5 pF 0.2 pF MARGINAL NO NO OK NO MARGINAL NO MARGINAL NO 4.0-12 GC4400 12-18 GC4200 GC4200 GC4700 GC4700 Series GC4900 Series 0.2 pF 0.1 pF 18-40 > 40 GC4200 18-40 GC4700 GC4900 GC4800 / Series GaAs MP Series 0.1 pF 12-18 > 40 GC4800 / GaAs MP Series GaAs MP Series GaAs MP Series 0.05 pF < 0.05 pF 0.05 pF < 0.05 pF NO NO NO NO NO NO NO NO NO NO NO NO NO NO NO NO +50 dBm +40OK dBm OKOK MARGINAL OK MARGINAL OK NO OK +40 dBm +30OK dBm OKOK OK OK OK OK MARGINAL OK NO MARGINAL +30 dBm +20OK dBm OKOK OK OK OK OK OK OK +20 dBm +10OK dBm OKOK OK OK OK OK OK OK OK OK OK OK +10 dBm OK OK OK OK OK OK OK NO OK NO NO MARGINAL MARGINAL OK OK MARGINAL MARGINAL NO OK NO MARGINAL OK MARGINAL OK OK Packaging for Power Handling Packaging for Power Handling Packaging for Power Handling Package Type Package Type Ceramic MELF MMSM Giga Mite EPSM Stripline Glass Axial Plastic 6 Lp Ceramic MELF Excellent Lp Cp Excellent Good Excellent Very Good Fair MMSM Good Very Very Good Giga Mite Good EPSM Good Very Good Good Good Stripline Good Good Fair Glass Axial Good Good Poor Plastic Fair Good Poor Fair Cp Rs Excellent Fair Excellent Thermal Performance Rs Cost Thermal Max (P) Performance Cost Frequency (P) (GHz) Excellent Excellent High Excellent Very Good Moderate Excellent High 18 Excellent Very Good Very Good Good Moderate Good Good Very Good Good Good Good Good Good Good Fair Good Good Good Good Very Good Good Good Good Fair Fair Poor Low Very Good Good Low Fair Moderate Poor Moderate Poor Moderate Fair Poor Low 2Low Max Comments Hermetic Frequency (GHz) Comments Hermetic Most products available 18 Yes Only select PIN diodes available Yes Most products available Yes2 Yes8 8Low No6 Moderate 6 No6 Moderate 6 No8 Moderate 1.5No 8 Yes or Low 1.5 Yes2 2 No Only select diodes available select PINs and varactors No PINOnly Only select andselect varactors Only PINs, varactors and Schottkys No PINs Most products available No PINs, Only select varactors and Schottkys Most products available Yesproducts or No available Most Only select PINs, varactors, and Schottkys Yes Most products available Only select PINs, varactors, and Schottkys No PINs, Only select varactors, and Schottkys Only select PINs, varactors, and Schottkys PIN Diodes GC4200 Series/SmallSignal/High Signal/High Speed Switching GC4200 Series/Small Speed Switching Chip Electrical Specifications: T 25C Chip Electrical Specifications:ATA 25C JUNCTION BREAKDOWN CAPACITANCE VOLTAGE MODEL VB @ 10uA NUMBER CJ @-10V (MIN)(V) (MAX) (pF) GC4270 GC4271 GC4272 GC4273 GC4274 GC4275 GC4210 GC4211 GC4212 GC4213 GC4214 GC4215 GC4220 GC4221 GC4222 GC4223 GC4224 GC4225 70 70 70 70 70 70 100 100 100 100 100 100 250 250 250 250 250 250 0.06 0.1 0.2 0.3 0.4 0.5 0.06 0.1 0.2 0.3 0.4 0.5 0.06 0.1 0.2 0.3 0.4 0.5 SERIES RESISTENCE (Rs @20mA, 1 GHz) (MAX) (Ohms) CARRIER LIFETIME TL (IR=6 mA, IF=10 mA) (Typ) (nS) THERMAL RESISTANCE (MAX) (C/W) 1.5 1 0.8 0.7 0.6 0.5 1.5 1 0.75 0.6 0.5 0.35 2.5 2 1.5 1 0.8 0.6 100 100 100 100 100 100 200 200 200 200 200 200 500 500 500 500 500 500 80 70 70 60 50 40 80 70 70 60 50 40 80 70 70 60 50 40 GC4400 Series/Large Signal Switching/Attenuator Chip Electrical Specifications: TA 25C MODEL NUMBER GC4410 GC4411 GC4412 GC4413 GC4430 GC4431 GC4432 GC4433 GC4490 GC4491 GC4492 GC4493 GC4494 GC4495 CARRIER LIFETIME BREAKDOWN JUNCTION THERMAL SERIES RESISTENCE TL VOLTAGE CAPACITANCE RESISTANCE (Rs @100mA, 100 MHz) VB @ 10uA CJ @-50V (IR=6 mA, IF=10 (MAX) (C/W) (MAX) (Ohms) (MIN)(V) (MAX) (pF) mA) (Typ) (uS) 100 100 100 100 300 300 300 300 750 750 750 750 750 750 0.1 0.25 0.5 0.75 0.1 0.25 0.5 0.75 0.1 0.25 0.5 0.75 1.3 2.5 0.6 0.5 0.4 0.3 1.5 1.2 1 0.8 1.5 1.2 1 0.8 0.35 0.3 0.4 0.6 0.8 1.2 0.6 1.2 1.5 2 1 2 3 4 5 6 40 25 20 10 40 30 20 10 30 25 20 10 7 5 Notes: 1. Capacitance is measured at 1 MHz and -10 volts. 2. Resistance is measured using transmission loss techniques. 3. These devices are not available in all case styles. Please consult the factory for specific package styles offered 7 PIN Diodes GC4700 Series/Large Signal Switching/Attenuator Chip Electrical Specifications: TA 25C BREAKDOWN VOLTAGE MODEL VB @ 10uA NUMBER (MIN)(V) GC4701 GC4702 GC4711 GC4712 GC4713 GC4721 GC4722 GC4723 GC4731 GC4732 GC4741 GC4742 GC4750 3 JUNCTION CAPACITANCE CJ @ 0V (Typ) (pF) JUNCTION CAPACITANCE CJ @ -6V (Max) (pF) JUNCTION CAPACITANCE CJ @ -50V (Max) (pF) SERIES RESISTENCE (Rs @10mA, 1 GHz) (MAX) (Ohms) 0.2 0.5 0.2 0.5 0.7 0.2 0.6 0.8 0.12 0.2 0.12 0.2 0.15 0.3 0.15 0.3 0.5 0.15 0.3 0.5 0.1 0.15 0.1 0.15 1.5 1.2 1.5 1.2 1 1.5 1 0.5 20 1.5 2 1.5 0.25 1.5 1.2 1.5 1.2 1 1.5 1 0.5 20 1.5 2 1.5 3.0 @50mA 20 20 45 45 45 120 120 120 15 15 30 30 250 CARRIER LIFETIME THERMAL TL RESISTANCE (IR=6 mA, (Typ) (C/W) IF=10 mA) (Typ) (uS) 5 20 10 12 10 15 15 10 20 6 50 1.2 50 0.5 100 0.3 5 30 5 20 7 20 7 15 300 4 Notes: 1. Pulse length 1 microsecond. 2. As measure in style 30 package. 3. Supplied as -002 style, dual mesa. GC4800 Series Planar Beam Lead PINs GC4800 Series/Planar Beam Lead PINs Electrical Specifications: TA 25C Electrical Specifications: TA 25C MODEL NUMBER GC4800A - 14 GC4801 - 14 GC4802 - 14 GC4810 - 16 SERIES SERIES BREAKDOWN CAPACITANCE CAPACITANCE RESISTENCE1 RESISTENCE1 VOLTAGE CT @-50V CT @-10V (Rs @20mA) (Rs @50mA) VB @ 10uA (Typ/Max) (pF) (Typ/Max) (pF) (Typ/Max) (Typ/Max) (MIN)(V) (Ohms) (Ohms) 80 80 100 150 0.016 / 0.020 0.020 -0.018 / 0.020 0.060 / 0.070 0.025 / 0.035 4.5 / 6.5 3.5 / 4.0 2.2 / 3.0 3.0 / 4.0 CARRIER LIFETIME TL (IR=6 mA, IF=10 mA) (Typ) (uS) 150 150 150 300 SWITCHING SPEED TS (Max) (nS) 30 30 30 50 Notes: Notes: 1. RS and CT are determined using Loss and Isolation measurements at F = 2.2 GHz. 1 - RS and CT are determined using Loss and Isolation measurements at F = 2.2 GHz. GC4900 Series/Mesa Beam Lead PINs GC4900Series MESA Beam Lead PINs Electrical Specifications: TA 25C DC PERFORMANCE MODEL NUMBER BREAKDOWN VOLTAGE VB @ 10uA (MIN)(V) CAPACITANCE CT @-10V (Typ/Max) (pF) GC4902 - 12 GC4903 - 12 GC4941 - 12 GC4942 - 12 GC4943 - 12 GC4944 - 12 GC4945 - 12 GC4946 - 12 100 100 50 50 50 50 50 50 0.025 0.030 0.060 0.040 0.030 0.025 0.022 0.020 SERIES RESISTENCE (Rs @10mA, F=2.2GHz) (Max) (Ohms) 1.5 2 3 3.5 5.5 6.5 RF PERFORMANCE TYP CARRIER SERIES LIFETIME RESISTENCE TL (Rs @50mA, (IR=6 mA, IF=10 F=2.2GHz) mA) (Max) (Ohms) (Typ) (uS) 3 80 2.5 80 50 45 40 35 40 40 Notes: 1. Insertion loss and Isolation are test at F = 2.2 GHz using transmission loss techniques. 8 1 Isol (dB) @VR=10V F=2.2 GHZ IL (dB) IF=10mA F=2.2 GHZ 22 26 27.5 29 30.5 32 0.14 0.17 0.27 0.3 0.45 0.51 PIN Diodes SM SERIES CERAMIC MELF PINS ELECTRICAL SPECIFICATIONS at 25C VOLTAGE CASE RATING SM Series Ceramic MELF PINs SM Series Ceramic MELF PINs PART NO. STYLE IR < 10a Electrical Specifications atSUGGESTED TA = 25C Electrical Specifications: TA 25C VR PART NUMBER TOTAL BREAKDOWN M1 500 1 VOLTAGE CAPACITANCE VB @ 10uA CT @ -50V SM0504 M1 500 (MIN)(V) (Max) (pF) CASESM0502 STYLE SUGGESTED TOTAL CAPACITANCE F = 1 MHz VR=50V pF (MAX) SERIES 0.50 RESISTENCE (Rs @100mA) 0.60 (MAX) (Ohms) SERIES RESISTANCE If=100mA F=100MHz OHM (MAX) SERIES 0.70 RESISTENCE (Rs @200mA) 0.60 (MAX) (Ohms) SERIES CARRIER TYPICAL RESISTANCE LIFETIME THERMAL If=200mA If=10mA SEC RESISTANCE F=100MHz (TYP) C/W OHM (TYP) TL 0.55 THERMAL 1.0 (IR=6 mA RESISTANCE IF=10 mA) 0.45 (Typ) (C/W) 1.5 (Typ) (uS) SM0508 M1 500 0.90 0.40 M1 500 0.50 0.70 0.55 1.00.25 M1 500 0.60 0.60 0.45 1.50.20 SM0509 M1 500 1.20 0.35 M1 500 0.90 0.40 0.25 2.0 SM0511 M1 500 1.25 0.30 M1 500 1.20 0.35 0.20 2.50.15 M1 500 1.25 0.30 0.15 3.00.12 SM0512 M1 500 1.50 0.25 M1 500 1.50 0.25 0.12 3.5 SM0812 M1 700 1.30 0.40 0.25 M1 700 1.30 0.40 0.25 4.0 M1 700 1.30 0.35 0.20 4.50.20 SM1001 M1 700 1.30 0.35 M1 50 1.20 .75 @ 50mA 0.20 4.0 SM1002 M1 50 1.20 .75 @50mA 0.20 M1 35 1.2 @ 20V .50 @ 10mA 0.10 0.6 SM1003measured M1 35 1.2 @ 20V .50at@F=100 10mA 0.10 Notes: 1. Total Capacitance at F=1 MHz. 2. Series Resistance measured MHz. SM0502 SM0504 SM0508 SM0509 SM0511 SM0512 SM0812 SM1001 SM1002 SM1003 35 20 15 15 15 15 15 15 15 25 35 20 2.0 15 2.5 15 3.0 15 3.5 15 4.0 15 4.5 15 4.0 15 0.6 25 RoHS and MRI Models RoHS and MRI Models RoHS Compliant PN SMX0502 - M1 SMX0504 - M1 SMX0508 - M1 SMX0509 - M1 SMX0511 - M1 SMX0512 - M1 SMX1002 - M1 SMX1003 - M1 Non-Mag. / RoHS PN SMX0502MR - M1 SMX0504MR - M1 SMX0508MR - M1 SMX0509MR - M1 SMX0511MR - M1 SMX0512MR - M1 SMX1002MR - M1 SMX1003MR - M1 M1 + `Non Magnetic' refers to any products that are designed with low and ultra low magnetic materials for use in MRI systems DIM INCHES MIN MAX 0.080 0.095 B 0.115 0.135 C 0.008 0.030 ++ RoHS versions are supplied with a matte tin finish. A Microsemi Base Model SM0502 - M1 SM0504 - M1 SM0508 - M1 SM0509 - M1 SM0511 - M1 SM0512 - M1 SM1002 - M1 SM1003 - M1 R 9 Monolithic Microwave Monolithic Microwave Surface Mount (MMSM) PIN Diodes This series of surface mount PIN diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the cathode and anode interconnections utilize precision photolithographic techniques rather than wire bonds, parasitic package inductance is tightly controlled. The package parasitics provide smooth non-resonant functionality through 12GHz. Key Features Applications Benefits * Tape and Reeled for Automatic Assembly * 2.4 GHz PCS communications * Low Series Inductance (<0.2nH typical) * 5.7 GHz Wireless LANS * Low Parasitic Capacitance (0.06 pf typical) * Solid State Switches, Attenuators, Limiters * Meets All Commercial Qualification Requirements * Phase Shifters * 0204 Outline * Widest bandwidth of any commercial surface mounted devices * Low thermal resistance * Ultra tight parametric distribution Electrical Specifications: TA 25C PART NUMBER TOTAL BREAKDOWN SERIES SERIES SERIES VOLTAGE CAPACITANCE1 RESISTENCE RESISTENCE RESISTENCE OUTLINE VB @ 10uA (Rs @0.01mA) (Rs @1mA) (Rs @10mA) CT @ -10V (Typ) (Ohms) (Ohms) (Max) (Ohms) (Min)(V) (Max) (pF) MPP4201 MPP4202 MPP4203 MPP4204 MPP4205 MPP4206 MPL4700 MPL4701 206 206 206 206 206 206 206 206 70 50 50 25 70 200 25 15 MPL4702 406 50B 0.2 0.15 0.1 0.15 0.15 0.15 0.15 Notes: 1. Total Capacitance measured at F=1 MHz. 2. Series Resistance measured at F=100 MHz. 10 250 7-16 5 (Typ) 2 12 TL (IR=6 mA IF=10 mA) (Typ) (nS) APPLICATION 2.0 2.5A 150 50 50 20 150 500 20 10 Attenuator MRI High Isolation Switch High Speed Switch Attenuator Attenuator/Switch Receiver Protection Receiver Protection 2 30 Anti-parallel Pair MRI Surface Coil Detune 2 5 2.5 A MRI Applications Matrix MRI - APPLICATIONS MATRIX FOR RF PIN DIODES MRI - APPLICATIONS MATRIX FOR RF PIN DIODES VOLUME / BIRD CAGE COILS - Switching Diodes Volume/Bird Cage Coils--Switching Diodes VOLUME / BIRD CAGE COILS - Switching Diodes (End ring resonant / anti-resonant Switching Diodes) (End ring resonant / anti-resonant Switching Diodes) (End ring resonant/anti-resonant Switching Diodes) Model # VBR Model # HUM2015 HUM2015 HUM2020 HUM2020 VBR 1500 1500 2000 2000 CT(pF) CT(pF) 3.5 Wi (um) Wi275 (um) 3.5 3.5 275 275 (s) Rs()1 @IF(mA) (s) 20 Rs() 0.1 1 @IF(mA) 500 20 20 0.1 0.1 500 500 Application Application Switching Switching Switching SURFACE COILS - RECEIVE ARRAY PIN Diodes (LOOP ARRAY OR-STRIP ARRAY - 4 CHANNELS SURFACE COILS RECEIVE ARRAY PIN Diodes AND NX4 CHANNELS) Surface Coil--Receive Array PIN Diodes (LOOP ARRAY OR STRIP ARRAY - 4 CHANNELS AND NX4 CHANNELS) (Loop Array or Strip Array 4 Channels and NX4 Channels) 1 Model # Model # UMX5601 UMX5601 UM7201 UM7201 UM9701 UM9701 UM9995 UM9995 UMX5101 UMX5101 UM9989AP3 UM9989AP3 MPL4702 3 MPL4702 3 VBR VBR 100 100 100 100 100 100 100 100 100 75 75 50 50 CT(pF) CT(pF) 2.5 2.5 2.2 2.2 1.8 1.8 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 2 2 2 2 Wi (um) Wi (um) 175 175 50 50 50 100 100 125 125 ----- (s) Rs() @IF(mA) (s) Rs()1 @IF(mA) 5 5 1.5 1.5 1.5 2 2 0.75 0.75 0.25 0.25 0.8 0.8 0.6 0.6 50 50 100 100 10 10 100 100 2.5 2.5 0.004 0.004 0.03 0.03 0.8 0.8 2 2 2 2 50 50 100 100 10 10 Application Application ULTRA-Low Magnetic Receive Array ULTRA-Low Magnetic Receive Array Receive Array Receive Array Receive Array ULTRA-Low Magnetic Recieve Array ULTRA-Low Magnetic Recieve Array ULTRA-Low Magnetic Recieve Array ULTRA-Low Magnetic Recieve Array Low Magnetic Recieve Array Low Magnetic Low Magnetic Recieve Array Recieve Array Low Magnetic Recieve Array TRANSMIT / RECEIVE Control Boards Transmit/Receiver Control Boards Model # VBR CT(pF) Wi (um) UM4001 UM4301 UM7301 SMX0512MR UM7101 UM6201 UM9415 100 100 100 500 100 100 50 3 2.2 0.7 1.5 1.2 1.1 3 175 325 325 50 100 50 175 (s) Rs()1 @IF(mA) 5 6 4 3.5 2 0.6 5 0.25 1.5 3 0.35 0.6 0.4 0.75 500 100 100 100 100 100 50 T/R T/R T/R T/R T/R T/R T/R Application Control Control Control Control Control Control Control RECEIVER Protection Circuits Receiver Protection Circuits Model # VBR CT(pF) Wi (um) UM9989 UM1089 UM7201 SMX0509MR MPP4204 MPL4702 3 UM9415 75 75 100 500 25 50 50 1.2 1.5 2.2 1.2 0.15 1.22 3 --50 50 --175 (s) Rs()1 @IF(mA) 0.006 0.015 1.5 2.5 0.02 0.03 5 2 0.8 0.25 0.2 2 2 0.75 100 100 100 200 10 10 50 Application Receiver Protection Receiver Protection Receiver Protection Receiver Protection Receiver Protection Receiver Protection Receiver Protection Notes: Notes: 1) Series Resistance (RS) is measured at 100MHz. 1. Series Resistance (RS) is measured at 100MHz. 2) Nominal Ct per Diode. 2. Nominal Ct per Diode. 3) Antiparallel Pairs 3. Anti-parallel Pairs 11 Power PIN Diodes POWER PIN Forfor Switching and Attenuation Power PINDIODES Diodes Switching and Attenuation Featuring fast swithing products through High Power / Low IM products for TR switching contol Featuring fast switching products through High Power / Low IM products for TR switching contol Category HIGH POWER PIN DIODE Up to 2000V 3.4 RP TL RP @30V (Min/Typ) @100V (Min) (uS) (Min) (kOhms) (kOhms) 200 Rs@100 mA (Max) (Ohms) RoHS Low Mag Available 100 10 / 30 100 5 / 15 0.5 Yes Yes Vb (Min) (V) PN 200 500 1000 2000 100 500 1000 1500 100 200 600 1000 100 200 600 1000 HUM2002 HUM2005 HUM2010 HUM2020 UMX5601 UMX5605 UMX5610 UMX5515 UM4301 UM4302 UM4306 UM4310 UM7301 UM7302 UM7306 UM7310 Vb (Min) (V) PN ULTRA LOW MAGNETING MED Power Switching Up to 1500V 2.6 SWITCHING / ATTENUATION MED Power Up to 1000V 2.2 200 6 1.5 Yes SWITCHING / ATTENUATION MED Power Up to 1000V 0.7 150 4 3 Yes CT@50V (Typ) (pF) G @0V (Max) (uS) TL (Typ) (nS) Rs@100 mA (Typ) (Ohms) 1.2 40 6 2 Yes Yes 75 UM9989 2.4 1.5 40 15 0.8 Yes Yes 75 UM9989AP UM9989 Category FAST TURN ON RECIEVER PROTECTION ANTI PARALLEL CONFIGURATION FAST TURN ON RECIEVER PROTECTION Category SURFACE MOUNT SWITCHING DIODE POWER PIN DIODES 12 CT@100V CT@50V (Typ) (Typ) (pF) (pF) CT@0V (Typ) (pF) CT@50V (Typ) (pF) 0.75 Rp CT@100 Rp @0V @100V V (Min) (Min) (Max) (kOhms) (pF) (kOhms) 5 0.4 300 4 Rs@100 mA (Typ) (Ohms) 0.5 2 2.2 TL (Typ) (uS) Yes RoHS Low Mag Available RoHS Low Mag Available Yes Yes Yes Vb (Min) (V) PN 75 UM9989 100 200 600 1000 UM6601 UM6602 UM6606 UM6610 Schottky Diodes Schottky Mixer Diodes * Monolithic design for lowest parasitics * Can be supplied as monolithic or as packaged device * Low Conversion Loss * Singe, T & Quad configurations available * Suitable for applications to 26.5 GHz * RoHS Compliant * Excellent Noise Figure Freq. Range PART NUMBER Barrier TOTAL BREAKDOWN FORWARD CAPACITANCE VOLTAGE VOLTAGE CT @ 0V VB @ 10uA VF @ 1mA (Max) (mV) (Min)(V) (Max) (pF) Ku-Ka GC9901 X GC9902 ULTRA-LOW 2 C GC9903 S GC9904 Ku-Ka GC9911 X GC9912 LOW 2 C GC9913 S GC9914 Ku-Ka GC9921 X GC9922 LOW-MED 2 C GC9923 S GC9924 Ku-Ka GC9931 X GC9932 MEDIUM 3 C GC9933 Electrical Specifications at TA = 25C S GC9934 Ku-Ka GC9941 X GC9942 JUNCTION HIGH Rs4 2 C GC9943 CAPACITANCE PART NUMBER (Max) S GC9944 CJ @ 0V (Typ) (pF) MS8001 (Ohms) 0.12 6 GaAs Schottky Barrier Diodes MS8002 Electrical Specifications0.1 at TA = 25C 6 MS8003 0.07 TA 25C Electrical Specifications: MS8004 0.06 JUNCTION CAPACITANCE PART NUMBER CJ @ 0V Flip Chip GaAs Schottky (Typ)Diodes (pF) MS8001 MS8002 MS8003 MS8004 6 6 Rs 2 (Max) (Ohms) 0.12 0.1 0.07 0.06 6 6 6 6 Rd @ IF = 5mA (Max) (Ohms) NF ssbs Typ (dB) 0.10 0.15 0.3 0.5 0.10 0.15 0.3 0.5 0.10 0.15 0.3 0.5 0.10 0.15 0.3 0.5 0.10 0.15 Typical 0.3 NF ssbs 4 LO Freq 0.5(Typ) (dB) 310 280 270 250 360 350 340 330 440 430 410 390 540 530 520 500 650 630 620Zif (Typ) 600 (Ohms) (Min)(V) 9.375 5.6 16 5.6 24 6.5 36 6.5 Typical NF ssbs 4 LO Freq (Typ) (dB) (GHz) 250-500 250-500 250-500 250-500 Zif (Typ) (Ohms) 5 5 5 5 VB @ 10uA (Min)(V) 5.6 5.6 6.5 6.5 250-500 250-500 250-500 250-500 5 5 5 5 Delta VF (mV) VB @ 10uA (Min)(V) (GHz) 9.375 16 24 36 18 14 12 10 18 14 12 10 18 14 12 10 18 14 12 10 20 16 V @ 12 B 10uA 10 6.5 6 5.5 5.5 6.5 6 5.5 5.5 6.5 6 5.5 5.5 6.75 6.25 5.75 5.5 7 6.25 5.75 5.75 Zif (Typ) (Ohms) 140 170 200 250 300 Flip Chip GaAs Schottky Barrier Diodes Flip Chip GaAs Schottky Diodes Electrical Specifications at TA = 25C Electrical Specifications: TA 25C Rs @10mA (Max) (Ohms) VF @10mA (mV) MS8150-P2613 0.08 7 MS8151-P2613 0.06 9 Electrical Specifications at TA = 25C MS8250 - P2920 0.08 7 MS8251 - P2920 0.06 9 Rs CAPACITANCE @10mA CJ @ 0V PART NUMBER (Max) (Max) (pF) (Ohms) 650 - 750 600 - 800 650 - 750 600 - 800 VF @10mA (mV) PART NUMBER MS8150-P2613 MS8151-P2613 MS8250 - P2920 MS8251 - P2920 CAPACITANCE CJ @ 0V (Max) (pF) 0.08 0.06 0.08 0.06 7 9 7 9 650 - 750 600 - 800 650 - 750 600 - 800 na na 10 10 Delta VF (mV) na na 10 10 Description 3 3 3 3 VB @ 10uA (Min)(V) Low Rs Flip Chip - Single Low Ct Flip Chip - Single Low Rs Flip Chip - Antiparallel Low Ct Flip Chip - Antiparallel 3 3 3 3 Low Rs Flip Chip - Single Low Ct Flip Chip - Single Low Rs Flip Chip - Antiparallel Low Ct Flip Chip - Antiparallel Description 13 Enhanced Performance Surface Mount EPSM PIN Diodes EPSM PIN Diodes EPSM PIN&Diodes for Attenuation for Switching Switching & Attenuation For Switching and Attenuation PART PART NUMBER NUMBER LSP1000 LSP1000 LSP1002 LSP1002 LSP1004 LSP1004 LSP1011 LSP1011 LSP1012 LSP1012 T TLL (I (IRR=6 =6 mA mA mA) IIF=10 F=10 mA) (Typ) (Typ) (nS) (nS) Application Application 80 nS nS 80 1500 1500 nS nS 150 150 nS nS 2000 nS nS 2000 5 5 nS nS Switch Switch Attenuator Attenuator Switch Switch Attenuator Attenuator Limiter Limiter TOTAL TOTAL CAPACITANCE CAPACITANCE CT @ -4V C T @ -4V (Max) (Max) (pF) (pF) TOTAL TOTAL CAPACITANCE CAPACITANCE C CTT @ @ -8V -8V (Max) (Max) (pF) (pF) Q (4V/50MHz) (4V/50MHz) Q min min 12 12 9 9 6 6 4.5 4.5 3 3 1.5 1.5 0.8 0.8 0.6 0.6 0.4 0.4 6.20 6.20 4.7 4.7 3.2 3.2 2.7 2.7 1.7 1.7 1 1 0.55 0.55 0.45 0.45 0.35 0.35 400 400 500 500 600 600 750 750 900 900 1200 1200 1400 1400 1600 1600 1800 1800 BREAKDOWN TOTAL BREAKDOWN TOTAL Rs Rs VOLTAGE CAPACITANCE VOLTAGE CAPACITANCE @ IIF @ F V @ 10uA C @ V B T R VB @ 10uA CT @ VR (Max) (Max) (Ohms) (Ohms) (Max) (Min)(V) (Max) (pF) (pF) (Min)(V) 35 0.28 @ @ 5V 5V 2.5 @ @ 5mA 5mA 35 0.28 2.5 100 0.32 4.0 100 0.32 @ @ 50V 50V 4.0 @ @ 100mA 100mA 35 0.75 0.6 35 0.75 @ @ 20V 20V 0.6 @ @ 10mA 10mA 200 0.35 @ @ 50V 50V 2.0 @ @ 100mA 100mA 200 0.35 2.0 20 0.35 1.8 20 0.35 @ @ 10V 10V 1.8 Ohms Ohms @ @ 10mA 10mA EPSM Hyperabrupt 12V EPSM Super Hyperabrupt 12V EPSM Super Super Hyperabrupt 12V Varactors for Low Voltage VCOs Varactors forfor Low Voltage VCOs VCOs Varactors Low Voltage PART PART NUMBER NUMBER KV1913A KV1913A KV1953A KV1953A KV1923A KV1923A KV1933A KV1933A KV1943A KV1943A KV1963A KV1963A KV1973A KV1973A KV1983A KV1983A KV1993A KV1993A TOTAL TOTAL TOTAL TOTAL CAPACITANCE CAPACITANCE CAPACITANCE CAPACITANCE CT @ @ -2.5V -2.5V C T CT @ -1.0V C T @ -1.0V (Min (Min -- Max) Max) (Min) (pF) (Min) (pF) (pF) (pF) 36 18 36 pF pF 18 -- 27 27 26 13 26 pF pF 13 -- 20 20 17 8.5 17 pF pF 8.5 -- 13 13 13 pF pF 6.5 -- 10 10 13 6.5 9 4.5 9 pF pF 4.5 -- 6.5 6.5 4 2.0 4 pF pF 2.0 -- 3.0 3.0 1.8 1.1 1.8 pF pF 1.1 -- 1.5 1.5 1.2 0.8 1.2 pF pF 0.8 -- 1.1 1.1 0.6 pF pF 0.5 -- 0.8 0.8 0.6 0.5 Microwave Hyperabrupt 22V Varactors Microwave Hyperabrupt 22V Varactors for Wide Bandwidth VCOs for Wide Bandwidth VCOs PART NUMBER TOTAL CAPACITANCE CTT @0V (Typ) (pF) KV2163 KV2153 KV2143 KV2133 KV2123 KV2113 26 pF 13.5 pF 7 pF 5 pF 3 pF 2 pF TOTAL CAPACITANCE CTT @ -4.0V (Min - Max) (pF) 8.75 - 10.80 4.45 - 5.50 2.65 - 3.30 1.75 - 2.20 1.30 - 1.65 0.85 - 1.10 TOTAL CAPACITANCE CTT @ -20V (Max) (pF) Q (4V/50M Hz) min 2.5 1.3 0.9 0.7 0.55 0.45 400 600 700 850 1000 1200 Microwave Abrupt 30V Varactors Microwave Abrupt 30Vfor Varactors Moderate Bandwidth, Low Noise VCOs for Moderate Bandwidth, Low Noise VCOs 14 PART NUMBER CT0/CT4 (min) TOTAL CAPACITANCE CTT @ -4.0V (+ / - 10%) (pF) CT4/CT30 (min) Q (4V/50M Hz) min GC1300 GC1301 GC1302 GC1303 GC1304 GC1305 GC1306 GC1307 GC1308 GC1309 GC1310 1.5 1.6 1.7 1.8 1.9 2 2 2.1 2.1 2.1 2.1 0.8 1.0 1.2 1.5 1.8 2.2 2.7 3.3 3.9 4.7 5.6 1.45 1.55 1.6 1.65 1.7 1.75 1.8 1.85 1.85 1.85 1.85 3900 3800 3700 3600 3500 3400 3300 3100 2700 2600 2500 Tuning Varactors Varactor Category Performance Guide Category Abrupt GaAs Abrupt Silicon Hyperabrupt GaAs Hyperabrupt Silicon Low "S" Linear FLTVARS High "S" Linear FLTVARS Silicon Super Hyperabrupts Model Number or Family MV20000 MV21000 GC1200; GC1300; GC1500; 1N5400 GC1600; 1N5400 GC1700; 1N5100 MV34000; MV30000; MV31000 MV32000 KV2100; MPV2100 GMV2100 KV2101 KV2201 KV2301 KV2401 KV2501 KV2601 KV2701 KV2801 KV3201; KV31S1 KV3901; KV38S2 Max Voltage Typical Ratio 15V 30V 3:1 4:1 30V 4:1 45V 60V 15V 5:1 6:1 6:1 30V 11:1 Mod Sens Linearity Relative Q or VCO Phase Noise Poor; Exponential Best Good (Mid-Range) Good - Excellent 22V 11:1 30V 11:1 Good (Mid Range) Very Good GC15000 22V 6:1 Excellent Excellent GC15000 22V 11:1 Excellent Excellent 12V 3:1 Good (Mid-Range) Very Good 12V 4:1 Good (Mid-Range) Very Good 12V 6:1 KV1905A KV1925A KV1935A KV1945A KV1965A; MPV1965 KV1975A KV1911A-KV1991A KV1912A-KV1932A KV1913A-KV1993A KV1400 KV1500 KV1600 KV1700 KV1800 Good Very Good (Mid-Range) 12V 13:1 Good (Mid-Range) Good 15 Tuning Varactors Varactor Diode Selector Guide Material Silicon Silicon Silicon Silicon Silicon Silicon Silicon GaAs GaAs GaAs Freq. Band Super Hyper Vb=12V P/N Series High "S" Linear Vb=22V P/N Low "S" Linear Vb=22V P/N Hyper Vb=22V P/N Series Abrupt Vb=30V Chip Ceramic Glass* Abrupt Vb=30V EPSM Abrupt Vb=30V SOT-23 Hyper Chips** VB=22V Low Gamma Hyper Chips** VB=22V Medium Gamma Hyper Chips** VB=22V High Gamma MV32001 MV32002 MV32003 MV32004 MV32005 MV32006 MV32007 MV32008 MV32009 MV32010 MV30011 MV30012 MV30013 MV30014 MV30015 MV30016 MV30017 MV30018 MV30019 MV30020 MV31011 MV31012 MV31013 MV31014 MV31015 MV31016 MV31017 MV31018 MV31019 MV31020 MV31021 Microwave to 40 GHz Microwave to 18 GHz 16 KV199x KV198x KV197x KV196x KV194x KV193x GC15006 GC15007 GC15008 GC15009 GC15010 GMV5007 GC15001 GC15002 GC15003 GC15004 GC15005 UHF to 1.0 GHz KV192x KV195x KV191x GC15011 GC15012 GC15013 GC15014 GC15015 GC15016 VHF to 250 MHz KV1401 KV1501 N/A N/A HF 1 - 50 MHz KV1601 KV1701 KV1801 N/A N/A MPV2100 KV211x KV212x KV213x KV214x KV215x KV216x GMV2114 GMV2134 GMV2154 KV2101 KV3201 KV3901 KV2801 KV2001 KV2201 KV2301 KV2401 KV2501 KV2601 KV2701 GC1500A GC1500B GC1500 GC1501 GC1502 GC1503 GC1504 GC1505 GC1506 GC1507 GMV1542 GC1508 GC1509 GC1510 GC1511 GC1512 GC1513 1N5441 1N5476 thru N/A GC1300 GC1301 GC1302 GC1303 GC1304 GC1305 GC1306 GC1307 GC1308 GC1309 GC1310 N/A N/A N/A MV31022 MV31023 GC1202 GC1203 GC1204 GC1205 GC1206 GC1207 GC1208 GC1209 GC1210 GC1211 GC1212 GC1213 GC1214 GC1215 GC1216 GC1217 N/A MV31024 MV31025 MV31026 GaAs GaAs GaAs GaAs Hyper Hyper Flip Chips** Chip VB=15V Vb=18V Very High Medium Gamma Gamma Abrupt Chips** Vb=15V Abrupt Chips** Vb=30V MV34001 MV34002 MV34003 MV34004 MV34005 MV34006 MV34007 MV34008 MV34009 MV34010 MV20001 MV20002 MV20003 MV20004 MV20005 MV20006 MV20007 MV20008 MV20009 MV20010 MV21001 MV21002 MV21003 MV21004 MV21005 MV20116 MV21007 MV21008 MV21009 MV21010 MV39001 MV39002 MV39003 MMSM Varactor Diodes Monolithic Microwave Surface Mount (MMSM) Varactor Diodes This series of surface mount PIN diodes utilize new and unique monolithic MMSM technology. The technology is a package/device integration accomplished at the wafer fabrication level. Since the cathode and anode interconnections utilize precision photolithographic techniques rather than wire bonds, parasitic package inductance is tightly controlled. The package parasitics provide smooth non-resonant functionality through 12GHz. Key Features: Applications/Benefits * * * * * * * * * * Tape and Reeled for Automatic Assembly Low Series Inductance (<0.2nH typical) Low Parasitic Capacitance (0.06 pf typical) Meets All Commercial Qualification Requirements 0204 Outline 2.4 GHz PCS 5.7 GHz Wireless LANS VCO's (Voltage Controlled Oscillator) Tunable Filter Widest bandwidth of any commercial surface mounted devices * Ultra tight parametric distribution Electrical Specifications at T = 25C A Electrical Specifications: TA 25C PART NUMBER MPV1965 PART NUMBER MPV2100 TOTAL CAPACITANCE Vb@10uA CT @ -1.0V (Min) (V) (Min - Max) (pF) 15 2.6-3.8 RATIO CT 1V/CT 3V RATIO CT 1V/CT 6V Q (4V/50MHz) (Min) Outline Dwg Number Application 1.4-2.2 2.6-3.6 1500 206 Low Voltage VCO Outline Dwg Number Application 206 Wide Bandwidth VCO TOTAL TOTAL TOTAL CAPACITANCE Q CAPACITANCE Vb@10uA CAPACITANCE CT @ -4.0V (4V/50MHz) CT @ 0V CT @ -20V (Min) (V) (Min) (Min - Max) (Typ) (pF) (Min - Max) (pF) (pF) 22 3.25 0.9-1.5 0.2-0.5 1500 17 GaAs Varactor Diodes Microsemi's GaAs varactors are available as Abrupt Junction and Hyperabrupt Junction. Our computer controlled epitaxy provide the optimal C-V characteristics for your application. GaAs varactors feature extremely high Q and lowest phase noise for critical applications/ Electrical Specifications: TA 25C 15 Volt Abrupt Junction Varactors, Gamma = 0.6 TOTAL Vb@10 RATIO CAPACITANCE uA Q (4V/50MHz) CT 0V/CT PART NUMBER CT @ -4.0V (Min) (Min) VBR (V) (+ /- 10%) (pF) MV20001 MV20002 MV20003 MV20004 MV20005 MV20006 MV20007 MV20008 MV20009 MV20010 0.3 0.4 0.5 0.6 0.8 1 1.2 1.5 1.8 2.2 2.4 2.6 2.8 2.9 3 3.1 3.2 3.3 3.4 3.4 15 15 15 15 15 15 15 15 15 15 8000 7500 7000 6500 6000 5700 5000 5000 5000 4000 30 Volt Abrupt Junction Varactors, Gamma = 0.6 PART NUMBER MV21001 MV21002 MV21003 MV21004 MV21005 MV21006 MV21007 MV21008 MV21009 MV21010 RATIO Vb@10 TOTAL CT CAPACITANCE uA 0V/CT CT @ -4.0V (Min) (V) VBR (+ /- 10%) (pF) 0.3 0.4 0.5 0.6 0.8 1 1.2 1.5 1.8 2.2 2.8 3.1 3.4 3.6 3.8 4 4.2 4.3 4.5 4.6 30 30 30 30 30 30 30 30 30 30 Q (4V/50MHz) (Min) 8000 7500 7000 6500 6000 5700 5000 5000 5000 4000 Electrical Specifications: Electrical Specifications at TTAA=25C 25C 15 Volt Hyperabrupt Varactors - Gamma = 1.00 TOTAL Vb@10 RATIO CAPACITANCE uA Q (4V/50MHz) CT 2V/CT PART NUMBER CT @ -4.0V (Min) (Min) 12V (V) (+ /- 10%) (pF) MV30001 MV30002 MV30003 MV30004 MV30005 MV30006 MV30007 MV30008 MV30009 MV30010 0.6 1 1.2 1.5 1.8 2.2 2.5 3 3.6 4.5 2.5 3.1 3.2 3.4 3.5 3.6 3.7 3.8 3.8 3.9 15 15 15 15 15 15 15 15 15 15 4000 3000 3000 3000 3000 3000 2500 2500 2000 1500 22 Volt Hyperabrupt Varactors - Gamma = 1.00 PART NUMBER MV30011 MV30012 MV30013 MV30014 MV30015 MV30016 MV30017 MV30018 MV30019 MV30020 RATIO Vb@10 TOTAL CT CAPACITANCE uA CT @ -4.0V (Min) 2V/CT (V) (+ /- 10%) (pF) 12V 0.6 1 1.2 1.5 1.8 2.2 2.5 3 3.6 4.5 3.1 4.1 4.3 4.8 5 5.3 5.5 5.7 5.9 6.1 22 22 22 22 22 22 22 22 22 22 Q (4V/50MHz) (Min) 4000 3000 3000 3000 3000 3000 2500 2500 2000 1500 Electrical Specifications: TA 25C 15 Volt Hyperabrupt Varactors - Gamma = 1.25 TOTAL Vb@10 RATIO CAPACITANCE uA Q (4V/50MHz) CT 2V/CT PART NUMBER CT @ -4.0V (Min) (Min) 12V (V) (+ /- 10%) (pF) MV31001 MV31002 MV31003 MV31004 MV31005 MV31006 MV31007 MV31008 MV31009 MV31010 0.6 1 1.2 1.5 1.8 2.2 2.5 3 3.6 4.5 3 3.7 3.9 4.2 4.4 4.6 4.7 4.8 4.9 5 15 15 15 15 15 15 15 15 15 15 4000 3000 3000 3000 3000 3000 2000 2000 2000 1500 22 Volt Hyperabrupt Varactors - Gamma = 1.25 PART NUMBER MV31011 MV31012 MV31013 MV31014 MV31015 MV31016 MV31017 MV31018 MV31019 MV31020 RATIO Vb@10 TOTAL CT CAPACITANCE uA CT @ -4.0V (Min) 2V/CT (V) (+ /- 10%) (pF) 12V 0.5 0.7 1 1.2 1.5 1.8 2 2.2 2.7 3.3 3.2 4 5 5.4 6 6.4 6.6 6.8 7.2 7.6 22 22 22 22 22 22 22 22 22 22 Q (4V/50MHz) (Min) 4000 4000 3000 3000 3000 3000 3000 3000 2000 2000 Additional Gamma and Capacitance values are available. Consult the factory or www.microsemi.com. 18 Gunn Diodes MG1001 - MG1060 Cathode Heat Sink * * * * 5.9-95GHz, CW designs to 500mW and pulsed designs to 10W High reliability, low phase noise, and low 1/f noise Transmitters and receivers, beacons, radars, radiometers, and instrumentation Motion detectors and automotive collision avoidance Discrete Frequency: Cathode Ground (CW EPI-Down) Minimum Power (mW) C (5.4-6.9) GHz X (8.0-12.4) GHz Ku (12.4-18.0) GHz K (18.0-26.5) GHz Ka (18-26.5) GHz U (40.0-60.0) GHz 10 V (60.5-85) GHz MG1036-M16 VOP = 4.5V @ IOP = 900mA W (85.0-95.0) GHz MG1024-M16 VOP = 4.5V @ IOP = 1100mA MG1025-16 VOP = 4.5V @ IOP = 1000mA 20 50 MG1001-M11 VOP = 12V @ IOP = 400mA MG1005-M11 VOP = 10V @ IOP = 400mA MG1009-M11 VOP = 8V @ IOP = 500mA MG1013-M16/83B VOP = 6V @ IOP = 600mA MG1017-M16 VOP = 4.5V @ IOP = 700mA MG1021-M16 VOP = 4V @ IOP = 800mA 100 MG1002-M11 VOP = 12V @ IOP = 600mA MG1006-M11 VOP = 10V @ IOP = 700mA MG1010-M11 VOP = 8V @ IOP = 800mA MG1014-M16/83B VOP = 6V @ IOP = 1000mA MG1018-M16 VOP = 4.5V @ IOP = 1100mA MG1022-M16 VOP = 4V @ IOP = 1200mA MG1037-M16 VOP = 5V @ IOP = 1100mA MG1038-M16 VOP = 5V @ IOP = 1200mA MG1023-M16 VOP = 4V @ IOP = 1600mA 150 (40-50 GHz) MG1015-M16/83B VOP = 6V @ IOP = 1400mA 200 250 MG1003-42 VOP = 12V @ IOP = 1100mA MG1007-42 VOP = 10V @ IOP = 1200mA MG1011-42 VOP = 8V @ IOP = 1200mA MG1019-M16 VOP = 5V @ IOP = 1400mA MG1020-M16 VOP = 5.5V @ IOP = 1600mA MG1039-M16 VOP = 5.5V @ IOP = 1700mA 300 (26.5-35 GHz) MG1040-M16 VOP = 5.5V @ IOP = 1800mA 350 (26.5-35 GHz) MG1016-83B VOP = 6V @ IOP = 1700mA 400 (18.0-23 GHz) 500 MG1004-42 VOP = 12V @ IOP = 1300mA MG1008-42 VOP = 10V @ IOP = 1600mA 5W Pulsed High Power (9.3GHz) MG1034-42 VOP = 35V @ IOP = 8A 10W Pulsed Stacked (9.3GHz) MG1060-42 VOP = 70V @ IOP = 6A MG1012-42 VOP = 8V @ IOP = 1700mA Polarity: Anode is the cap and Cathode is the heat-sink MG1041-MG1058 Anode Heat Sink * * * * 9.5-25Ghz, pulsed and CW designs to 30mW High reliability, ultra low phase noise, and low 1/f noise Transmitters and receivers, beacons, radars, radiometers, and instrumentation Motion detectors and automotive collision avoidance Discrete Discrete Frequency: Frequency: Anode Anode Ground Ground (CW (CW EPI-Up) EPI-Up) Minimum Minimum 5 5 X X 10 10 MG1052-30 MG1052-30 VOPV= = 8V @ @ OP8V IOP I= = 140mA OP140mA MG1056-30 MG1056-30 VOPV= = 8V @ @ OP8V IOP I= = 200mA OP200mA 20 20 K K MG1054-30 MG1054-30 VOPV= = 5V @ @ OP5V IOP I= = 200mA OP200mA MG1058-30 MG1058-30 VOPV= = 5V @ @ OP5V IOP I= = 300mA OP300mA Polarity: Polarity: cathode cathode is the is the cap cap andand anode anode is the is the heat-sink heat-sink Discrete Discrete Frequency: Frequency: Anode Anode Ground Ground (Pulsed (Pulsed EPI-Up) EPI-Up) Minimum Minimum 5 5 X X 10 10 MG1041-30 MG1041-30 VOPV= = 9V @ @ OP9V IOP I= = 110mA OP110mA MG1042-30 MG1042-30 VOPV= = 9V @ @ OP9V IOP I= = 140mA OP140mA MG1043-30 MG1043-30 = 10V @ @ VOPV= OP10V = 180mA IOP I= OP180mA 20 20 30 30 K K MG1044-130 MG1044-130 VOPV= = 8V @ @ OP8V IOP I= = 120mA OP120mA MG1045-30 MG1045-30 VOPV= = 8V @ @ OP8V IOP I= = 150mA OP150mA MG1046-30 MG1046-30 VOPV= = 8V @ @ OP8V IOP I= = 200mA OP200mA Operation Operation overover a narrow a narrow band band around around a specific a specific center center frequency. frequency. Polarity: Polarity: cathode cathode is the is the cap cap andand anode anode is the is the heat-sink heat-sink Other frequencies available upon request. CallCall factory. Other frequencies available upon request. factory. Pulse width = 1= usec, Duty factor = 1% typ.typ. Pulse width 1 usec, Duty factor = 1% Operating Operating voltage voltage (VOP(V ) typ. Operating Operating current current (IOP)(Imax. OP) typ. OP) max. Alternative Alternative pulse pulse width width andand dutyduty factors factors can can be specified be specified by customer by customer Note: Operation over a narrow band around a specific center frequency. Other frequencies available upon request. Call factory. Operating voltage (VOP) typ. Operating current (IOP) max. Power measured with diode inserted in critically coupled cavity. Specifications @ 25C.Specifications subject to change without notice. 19 Comb Generators Input Model Number Module Coaxial GG770140-01 GG770340-01 GG770140-02 GG770340-02 GG770140-03 GG770340-03 GG770140-04 GG770340-04 GG770140-05 GG770340-05 GG770140-06 GG770340-06 GG770140-07 GG770340-07 Frequency (MHz) 100 200 250 500 1000 1500 2000 Output level Up to 4.0 (GHz) -10 -5 -5 0 5 5 5 4.0 to 8.0 (GHz) -20 -20 -15 -10 -5 0 0 8.0 to 12.0 (GHz) -20 -20 -15 -10 -5 12.0 to 18.0 (GHz) -15 -10 -10 Notes: 1. Minimum output power per line (dBm) 2. All specifications apply at 25C with 0.5W incident RF power in a 50 ohm system (both source & load) 3. Performance above 12.0GHz is typical performance only. 4. Modular units require an external DC return at the output. Internal or RF decoupled DC returns are available on special order. 5. VSWR is specified at 2.0:1 max (for all model numbers). 6. Modular package style is 210003; Coaxial package style is 210020 Surface Mount Limiter Model GG77015-01 Freq Range (MHz) 10 - 3000 INSERTION CW Power PCW (W) 4 Peak Power1 PP(W) 20 Ins. Loss2 IL(dB) Typ. 0.5 VSWR2 Typ. 1.5:1 Flat Leakage3 (dBm) Typ. 1.01.51.85<= 1GHz 1.5GHz 1.85GHz 3.5GHz 15 18 20 23 FLAT LEAKAGE INSERTION LOSS Notes: 1. Pulse Width = 1usec, Duty Cycle = 0.001 2. P = -10dBm max 3. P = +30dBm, Pulse Width = 1usec, Duty Cycle = 0.001 4. RF Power Handling is linearly derated from full power at +25C to zero power at +150C 20 FLAT LEAKAGE PIN Diode Limiter Assemblies Standard Broadband Modules STANDARD Limiter BROADBAND LIMITER MODULES Frequency Range (GHz) 0.5 to 4.0 2.0 to 8.0 4.0 to 12.0 8.0 to 18.0 2.0 to 18.0 Insertion Loss (dB max) 0.5 0.7 0.7 0.8 0.6 0.7 0.7 1.2 1 1 1.6 1.9 1.9 2.2 2 2 2.2 VSWR (max) Survival Peak 1.5:1 1.5:1 1.5:1 1.5:1 1.7:1 1.7:1 1.7:1 1.7:1 1.8:1 1.8:1 1.8:1 1.9:1 1.9:1 2.0:1 2.0:1 2.0:1 2.0:1 100 200 200 1000 100 200 200 1000 200 200 800 200 200 600 200 200 600 Power (Watts) CW 3 3 3 5 2 2 2 3 2 2 3 2 2 3 2 2 3 Flat Leakage (mW Max) 400 200 125 200 500 125 100 200 100 60 200 100 60 200 125 100 200 Model Number Package Style GG77012-01 GG77010-01 GG77011-01 GG77013-01 GG77012-02 GG77010-02 GG77011-02 GG77013-02 GG77010-03 GG77011-03 GG77013-03 GG77010-04 GG77011-04 GG77013-04 GG77010-05 GG77011-05 GG77013-05 210013 210001 210003 210003 210013 210001 210003 210003 210001 210003 210003 210001 210003 210003 210001 210003 210003 Notes: All low level parameters specified at -10 dBm input power All limiter modules require an external DC return of 1.0 ohm or less except the GG77014-XX Low Leakage Limiter Modules LOWBroadband LEAKAGE BROADBAND LIMITER MODULES 2.0 to 8.0 4.0 to 12.4 8.0 to 18.0 1.4 1.9 2.2 1.8:1 2.0:1 2.0:1 10 10 10 1 1 1 20 20 35 GG77014-01 GG77014-02 GG77014-03 series, which requires external 210003 210003 210003 DC blocks at both ends. Model numbers GG77314XX incorporate DC blocking capacitors and do not require either ground return or external StandardSTANDARD Broadband Connectorized Limiters LIMITERS BROADBAND CONNECTORIZED Frequency Range (GHz) 0.5 to 4.0 2.0 to 8.0 4.0 to 12.0 8.0 to 18.0 2.0 to 18.0 Insertion Loss (dB max) 0.6 0.7 0.9 1 1 1.5 1.5 1.5 2.1 2.2 2.5 2.5 2.2 2.5 2.5 VSWR (max) Survival Peak 1.5:1 1.5:1 1.5:1 1.7:1 1.7:1 1.7:1 1.8:1 1.8:1 1.8:1 1.9:1 1.9:1 2.0:1 2.0:1 2.0:1 2.0:1 200 200 1000 200 200 1000 200 200 800 200 200 600 200 200 600 Power (Watts) CW 3 3 5 2 2 3 2 2 3 2 2 3 2 2 3 Flat Leakage (mW Max) 200 100 200 125 100 200 100 60 200 100 60 200 125 100 200 DC blocks Model Number Package Style GG77310-01 GG77311-01 GG77313-01 GG77310-02 GG77311-02 GG77313-02 GG77310-03 GG77311-03 GG77313-03 GG77310-04 GG77311-04 GG77313-04 GG77310-05 GG77311-05 GG77313-05 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 210019 1.4 2 2.5 1.4 2 2.5 1.8:1 2.0:1 2.0:1 1.8:1 2.0:1 2.0:1 10 10 10 10 10 10 1 1 1 1 1 1 20 20 35 20 20 35 GG77314-04 GG77314-05 GG77314-06 GG77314-07 GG77314-08 GG77314-09 sec pulse width and 0.001 duty cycle Spike leakage is 0.2 ergs (max) based on the assumption that the pulse rise time of the high power pulse is greater than 20.0 nsec. Spike leakage for the low frequency limiters is specified at 0.1 ergs (max) Recovery time (3 dB) for all units expect for the GG77014-XX, GG77314-XX and GG77315XX series is 250nSec @ 100W pulsed input power. Series GG77314-XX and GG77014- Low LeakageLOW Connectorized Limiters LEAKAGE CONNECTORIZED LIMITERS 2.0 to 8.0 4.0 to 12.4 8.0 to 18.0 2.0 to 8.0 4.0 to 12.4 8.0 to 18.0 Peak power ratings apply @ 1.0 XX recovers in 500nSec at 210019 210019 210019 210032 210032 210032 rated pulsed power and series GG77315-XX recovers in 1.0Sec at rated pulsed power Limiting threshold (1 dB compression point) is 5mW (min) except for the GG77014-XX and Low Frequency Connectorized Limiters LOW FREQUENCY CONNECTORIZED LIMITERS 0.01 to 0.1 0.1 to 0.5 0.5 to 1.0 0.01 to 0.1 0.1 to 0.5 0.5 to 1.0 0.7 0.7 1 0.7 0.7 1 1.5:1 1.5:1 1.5:1 1.5:1 1.5:1 1.5:1 100 100 100 100 100 100 1 1 1 1 1 1 200 200 200 200 200 200 GG77315-01 GG77315-02 GG77315-03 GG77315-04 GG77315-05 GG77315-06 210019 210019 210019 210093 210093 210093 GG77314-XX series which is 1.0mW (min) Leakage levels are specified at rated peak power 21 SP5T Switches SP6T ABSORPTIVE SWITCHES Absorptive Switches SPST SP2T SP3T SP4T SP5T SP6T Model Number Frequency Range GG71420-01 GG71420-02 GG71420-03 GG71420-04 GG71420-05 GG72420-01 GG72420-02 GG72420-03 GG72420-04 GG72420-05 GG73420-01 GG73420-02 GG73420-03 GG73420-04 GG73420-05 GG74420-01 GG74420-02 GG74420-03 GG74420-04 GG74420-05 GG75420-01 GG75420-02 GG75420-03 GG75420-04 GG75420-05 GG75425-01 GG75425-02 GG75425-03 GG75425-04 GG75425-05 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 Insertion Loss (dB max) 1.7 2.1 2.4 2.9 2.9 1.7 2.1 2.4 2.9 2.9 1.7 2.2 2.5 3 3 1.8 2.3 2.7 3.2 3.2 1.6 2.1 2.6 3.2 3.2 1.8 2.2 2.9 3.6 3.6 Isolation VSWR (dB min) 55 50 45 45 45 60 55 50 45 45 60 55 50 45 45 60 55 50 45 45 45 40 40 35 35 45 40 40 35 35 (max) 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 Outline 210059 210059 210059 210059 SPST 210059 210047 210047 210047 210047 210047 SP2T 210079 210079 210079 210079 210079 SP3T 210049 210049 210049 210049 210049 SP4T 210050 210050 210050 210050 210050 SP5T 210051 210051 210051 210051 210051 Reflective Switches SPST SP2T SP3T SP4T SP5T SP6T 22 SP6T Notes: 1. Required D.C. Bias: +5V and -8 to SWITCHES -15V REFLECTIVE 2. Switching Speed: 1usec maximum (50% TTL to 10/90% RF) 3. Only the switched arms are matched in the isolated state Insertion Isolation VSWR Frequency Outline Model Number Loss only when one path is in the loss 4. The common arm, J1, is matched state Range (dB max) (dB min) (max) 5. DC blocks incorporated on all RF ports GG71410-01 0.5 - 4.0 0.9 40 1.5:1 210059 GG71410-02 2.0 - 8.0 1.3 50 1.7:1 210059 GG71410-03 4.0 - 12.4 1.5 60 1.8:1 210059 GG71410-04 8.0 - 18.0 1.7 55 1.9:1 210059 GG71410-05 2.0 - 18.0 1.8 45 2.0:1 210059 GG72430-01 0.5 - 4.0 1 60 1.5:1 210047 GG72430-02 2.0 - 8.0 1.6 60 1.7:1 210047 GG72430-03 4.0 - 12.4 2.2 60 1.8:1 210047 GG72430-04 8.0 - 18.0 2.5 55 1.9:1 210047 GG72430-05 2.0 - 18.0 2.5 55 2.0:1 210047 GG73430-01 0.5 - 4.0 1.1 60 1.5:1 210079 GG73430-02 2.0 - 8.0 1.8 60 1.7:1 210079 GG73430-03 4.0 - 12.4 2.4 60 1.8:1 210079 GG73430-04 8.0 - 18.0 2.7 55 1.9:1 210079 GG73430-05 2.0 - 18.0 2.7 55 2.0:1 210079 GG74430-01 0.5 - 4.0 1.2 60 1.5:1 210049 GG74430-02 2.0 - 8.0 1.9 60 1.7:1 210049 GG74430-03 4.0 - 12.4 2.4 60 1.8:1 210049 GG74430-04 8.0 - 18.0 2.9 55 1.9:1 210049 GG74430-05 2.0 - 18.0 2.9 55 2.0:1 210049 GG75430-01 0.5 - 4.0 1.3 60 1.5:1 210050 GG75430-02 2.0 - 8.0 2.1 55 1.7:1 210050 GG75430-03 4.0 - 12.4 2.6 50 1.8:1 210050 GG75430-04 8.0 - 18.0 3.3 45 1.9:1 210050 GG75430-05 2.0 - 18.0 3.3 45 2.0:1 210050 GG75435-01 0.5 - 4.0 1.5 60 1.5:1 210051 GG75435-02 2.0 - 8.0 2.3 60 1.7:1 210051 GG75435-03 4.0 - 12.4 2.8 60 1.8:1 210051 GG75435-04 8.0 - 18.0 3.6 55 1.9:1 210051 GG75435-05 2.0 - 18.0 3.6 55 2.0:1 210051 Notes: 1. Required D.C. Bias: +5V and -8 to -15V 2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF) 3. DC blocks incorporated on all RF ports GG74420-04 GG74420-05 GG75420-01 GG75420-02 GG75420-03 GG75420-04 GG75420-05 GG75425-01 GG75425-02 GG75425-03 GG75425-04 GG75425-05 8.0 - 18.0 2.0 - 18.0 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 0.5 - 4.0 2.0 - 8.0 4.0 - 12.4 8.0 - 18.0 2.0 - 18.0 3.2 3.2 1.6 2.1 2.6 3.2 3.2 1.8 2.2 2.9 3.6 3.6 45 45 45 40 40 35 35 45 40 40 35 35 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 1.5:1 1.7:1 1.8:1 1.9:1 2.0:1 210049 210049 210050 210050 210050 210050 210050 210051 210051 210051 210051 210051 REFLECTIVE SWITCHES Notes: 1. Required D.C. Bias: +5V and -8 to -15V Insertion 2. Switching Speed: 1usec maximumIsolation (50% TTL toVSWR 10/90% RF) Frequency Outline Model Loss 3. Number Only the switched Range arms are matched in the isolated state (dB max) (dB min) (max) 4. The common arm, J1, is matched only when one path is in the loss state GG71410-01 0.5 - 4.0 0.9 40 1.5:1 210059 5. DC blocks incorporated on all RF ports GG71410-02 2.0 - 8.0 1.3 50 1.7:1 210059 GG71410-03 4.0 - 12.4 1.5 60 1.8:1 210059 GG71410-04 8.0 - 18.0 1.7 55 1.9:1 210059 GG71410-05 2.0 - 18.0 1.8 45 2.0:1 210059 GG72430-01 0.5 - 4.0 1 60 1.5:1 210047 GG72430-02 2.0 - 8.0 1.6 60 1.7:1 210047 GG72430-03 4.0 - 12.4 2.2 60 1.8:1 210047 GG72430-04 8.0 - 18.0 2.5 55 1.9:1 210047 GG72430-05 2.0 - 18.0 2.5 55 2.0:1 210047 GG73430-01 0.5 - 4.0 1.1 60 1.5:1 210079 GG73430-02 2.0 - 8.0 1.8 60 1.7:1 210079 GG73430-03 4.0 - 12.4 2.4 60 1.8:1 210079 GG73430-04 8.0 - 18.0 2.7 55 1.9:1 210079 GG73430-05 2.0 - 18.0 2.7 55 2.0:1 210079 GG74430-01 0.5 - 4.0 1.2 60 1.5:1 210049 GG74430-02 2.0 - 8.0 1.9 60 1.7:1 210049 GG74430-03 4.0 - 12.4 2.4 60 1.8:1 210049 GG74430-04 8.0 - 18.0 2.9 55 1.9:1 210049 GG74430-05 2.0 - 18.0 2.9 55 2.0:1 210049 GG75430-01 0.5 - 4.0 1.3 60 1.5:1 210050 GG75430-02 2.0 - 8.0 2.1 55 1.7:1 210050 GG75430-03 4.0 - 12.4 2.6 50 1.8:1 210050 GG75430-04 8.0 - 18.0 3.3 45 1.9:1 210050 GG75430-05 2.0 - 18.0 3.3 45 2.0:1 210050 GG75435-01 0.5 - 4.0 1.5 60 1.5:1 210051 GG75435-02 2.0 - 8.0 2.3 60 1.7:1 210051 GG75435-03 4.0 - 12.4 2.8 60 1.8:1 210051 GG75435-04 8.0 - 18.0 3.6 55 1.9:1 210051 GG75435-05 2.0 - 18.0 3.6 55 2.0:1 210051 Notes: 1. Required D.C. Bias: +5V and -8 to -15V 2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF) 3. DC blocks incorporated on all RF ports RF, Microwave & mmWave Diode Package Styles Microsemi Lowell offers a wide variety of package styles to meet specific design requirements. Package selection is an important step in the design process. Designers need to be aware of parametric trades-offs for the various package styles. Some considerations are: * * * * * * * Electrical Performance. Thermal Requirements Hermetic / Non Hermetic Taped and Reeled for automatic assembly Cost versus Performance. RoHS compliance Consult the factory for package selection assistance. This catalog contains outlines for a selection of our standard package styles. However, we supply numerous variations of these packages to suit specific application needs. Microsemi can also work together with engineers to develop custom package solutions. Most of our packages are supplied with a gold finish suitable for `Lead Free' and Pb/Sn assembly techniques. Some RoHS compliant packages are supplied with a Matte Tin finish. Microsemi offers: * Hi-Rel Hermetic Packages * High Frequency / Broadband (Through 40 Ghz) Discrete Packages * High Power Packages * - Chip,Beamlead & Flip Chip devices -Stud, ASM & SM Styles Low Cost High Volume Packages - SOT 23 - Gigamite (GM1) * Broadband performance, Economically Priced "MMSM" * EPSMTM (Enhance Performance Surface Mount) * - Style 206 - Style 150, 250 and 450 Series RoHS Compliant Packaging 23 Diode Packages Packages are RoHS Compliant unless specified Style 34 Style 79 Style 115A Style 127A Style 127C Style 149 24 Diode Packages Packages are RoHS Compliant unless specified Style 174C Style 206 (MMSMTM) Style 250A - 250D Style 454 Style GM1 Style M1 25 RF & Microwave Power Transistor Products 26 Among many diverse semiconductor business units, the Microsemi RF Integrated Solutions (RFIS) business unit was created in 2010 to best cohesively serve the RF, microwave, and millimeter wave products market. Along with diode and amplifier products were included RF and microwave power transistor products. The Microsemi RF and microwave power transistor products group specializes in supporting customers in the avionics, communications, and radar markets with full line-ups of products meeting the demanding requirements of transmitter amplifier systems, operating in airborne, ground based, missile, ship borne and space environments. The Microsemi RFIS RF and microwave power transistor products line heritage spans more than 35 years and includes legacy CW and high pulsed power silicon bipolar junction transistor (BJT) devices and products originally designed by Acrian, GHz Technology, Advanced Power Technologies, Microwave Semiconductor Corporation, Motorola Semiconductor, Solid State Scientific, and SGS Thompson Microelectronics (ST). Whether an airborne IFF (Identify Friend or Foe), ground based primary surveillance radar, or for satellite borne communications or imaging, in the high reliability market most RF and microwave power amplifier transmitter systems are designed for a product life cycle of 15 to well beyond 25 years. Microsemi RF & microwave transistor product offerings are unique in supporting applications throughout the full life cycle and thereby have cultivated a long standing relationship with major system manufacturers worldwide. Our Santa Clara California silicon wafer foundry and Bend Oregon silicon and silicon carbide wafer foundries produce a very broad range of transistor die covering the frequencies from HF through 3.5 GHz, CW and Pulsed. Our facilities are fully ISO9001 certified and supply product for commercial, defense and space applications. Automated assembly and test equipment assures Microsemi customers consistent high quality products resulting in highest factory yields achievable which is passed on to Microsemi customers as the lowest cost of ownership. Combined with the use of the most advanced modern equipment for both manufacturing and test, is statistical process control (SPC) to achieve the best continual process improvement (CPI). Our Mission and Goals Our mission is to be the world leader in high power silicon and wide band gap (WBG) RF and microwave power transistors for avionics, communications and radar systems. With a sustained high research and development investment and a keen eye for accretive acquisitions, Microsemi will continue to be the market leader, always pushing the performance envelope by along with the best, and most efficient power amplifier driver transistors, continually introducing the highest power state of the art, most rugged and reliable RF, microwave, and millimeter wave transistor products. Whether a die, a packaged transistor, a 50 input and output plug and play transistor pallet, or a more integrated amplifier assembly, simply: The Microsemi goal is to provide the customer with products that meet all specified requirements over the life of the program. This ensures that our customers will always achieve the optimum system performance and lowest total cost of ownership. 27 GaN & SiC / Wide Band Gap * VHF/UHF/L-Band SiC SIT devices deliver up to 2200W * Pulsed & CW products for primary and secondary power output under 300us pulse width and 10% duty radars & communications systems cycle pulsing * Wide band gap technologies allow higher voltage and * GaN on SiC transistor devices deliver greater than higher junction temperature operation: more power 700W for L-Band pulsed avionics less space * For pulsed radar GaN on SiC transistor devices deliver * High Voltage GaN HEMT's on SiC for best thermal greater than 500W at L-Band, 500W at S-Band, & dissipation 150W at C-Band * Wide band gap GaN on SiC HEMT (high electron 2013 Short Formtransistor) Catalog - Wide Band Gap SiC GaN on Sic mobility transistor) & SiC SIT (static induction semiconductor technologies Pulsed Devices Class AB VHF 150-160 MHz SiC SIT Common Gate UHF 406-450 MHz SiC SIT Common Gate 1030 MHz Mode-S ELM GaN on SiC HEMT 1030/1090 MHz Mode-S ELM GaN on SiC HEMT Common Source 1030MHz Mode-S / TCAS / IFF GaN on SiC HEMT Common Source 1025-1150 MHz Air DME GaN on SiC Class AB Common Source 960-1215 MHz HD Data Link GaN on SiC HEMT Common Source L-Band 1200-1400 MHz GaN on SiC HEMT Common Source S-Band 2700-2900 MHz GaN on SiC HEMT Common Source S-Band 2700-3100 MHz GaN on SiC HEMT Common Source S-Band 2700-3500 MHz GaN on SiC HEMT Common Source S-Band 3100-3500 MHz GaN on SiC HEMT Common Source C-Band 4400-6000 MHz GaN on SiC HEMT Common Source Idq Ave1 (mA) Pulse Width ( s) Duty Cycle (%) VSWR Load (V) Typ (%) 9.5 125 60 500 300 10 10:1 11 55 155 270 440 5 10 10 8.5 8 8 21.5 125 125 125 125 125 65 50 50 55 55 55 75 30 100 150 125 150 1000 300 300 300 300 300 2400** 10 10 10 6 6 6.4 650 750 5 14.1 20.8 17.2 65 50 67 68 100 100 2400** 2400** 1000 17.8 17.5 50 55 100 700 12.6 19 50 60 20 100 300 300 600 650 20 100 280 500 550 150 150 270 270 400 500 500 20 100 110 110 200 220 450 35 100 0.4 2.5 4 6.3 8 11.2 0.4 2.5 6.3 8 12 10 8 16 12.6 28.2 36 35.5 0.5 8 8 7.5 12 16 36 2 8 17 16 17.5 16.8 18 17.6 17 16 16.7 18 16.6 11.76 12.7 12.7 13.3 11 11.4 11.5 16 11 11.4 11.7 12.2 11.4 11 12.4 11 50 50 65 50 65 50 50 50 50 60 50 50 60 50 60 65 50 65 50 50 50 60 60 50 50 60 60 20 110 120 170 200 380 100 70 1 9 9 12 16 36 9 7 13 10.87 10.8 11.5 11 10 10.45 10 50 50 60 60 50 50 60 60 Pout Min (W) Pin Max (W) Gain Min (dB) Vdd 1250 160 100 500 1000 1500 2200 700 Case Style Part Number 0.15 55KT-2 0150SC-1250M 10:1 10:1 10:1 5:1 10:1 3:1 2.5 0.3 0.15 0.15 0.15 0.25 55KT-FET 55KT-FET 55ST-FET 55ST-FET 55TW-FET 55KR 6.4 6.4 3:1 3:1 0.25 0.24 55KR 55KR MDS-GN-650ELM MDSGN-750ELMV* 10 1 3:1 0.12 55KR 1011GN-1000V* 100 20 6 3:1 0.21 55KR DME-GN-700V 55 55 55 55 55 55 50 55 60 55 55 50 50 55 55 50 50 54 46 50 50 42 42 50 46 40 40 10 30 50 50 100 100 20 30 50 50 100 30 30 60 60 80 100 100 10 30 30 30 500 80 150 15 30 128 3000 128 128 128 128 300 3000 200 300 300 100 100 100 100 100 100 100 200 3000 200 200 200 200 200 300 300 10 30 10 10 10 10 10 30 20 10 10 10 10 10 10 10 10 10 10 30 10 10 10 10 10 10 10 3:1 3:1 3:1 3:1 3:1 3:1 5:1 3:1 3:1 3:1 3:1 5:1 5:1 3:1 3:1 3:1 3:1 3:1 5:1 3:1 5:1 5:1 3:1 3:1 3:1 5:1 5:1 6.56 1.07 0.3 0.44 0.2 0.23 5.39 1.1 0.57 0.16 0.24 0.92 1.1 0.38 0.6 0.24 0.18 0.2 4.59 1.02 0.93 1.1 0.6 0.47 0.19 2.4 1.1 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55KR 55QP 55QP 55QP 55QP 55KR 55KR 55KR 55QP 55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP 0912GN-20V* 0912GN-100LV* 0912GN-300 0912GN-300V* 0912GN-600 0912GN-650V* 1214GN-20V* 1214GN-100LV* 1214GN-280LV* 1214GN-500 1214GN-550V* 2729GN-150V* 2729GN-150 2729GN-270V* 2729GN-270 2729GN-400 2729GN-500V* 2729GN-500 2731GN-20V* 2731GN-100LV* 2731GN-110V* 2731GN-110M 2731GN-200M 2731GN-220V* 2731GN-450V* 2735GN-35M 2735GN-100M 45 42 48 35 40 40 50 39 10 30 30 60 80 100 30 30 300 300 300 300 300 300 100 100 10 10 10 10 10 10 10 5 5:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1 4.32 0.68 1.1 0.6 0.38 0.19 1 0.94 55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP 3135GN-20V* 3135GN-110V* 3135GN-120M 3135GN-170M 3135GN-200V* 3135GN-400V* 4450GN-100 5259GN-70 Microsemi supports customer specifications and develops custom products. Please contact the factory for more information. 1 For best efficiency GaN common source class AB transistor gate is turned off when pulse burst is not present peak & Idq=(Idq-ave)/ (duty cycle) 28 jc (C/W) 0405SC-100M 0405SC-500M 0405SC-1250M 0405SC-1500M 0405SC-2200M 1011GN-700ELM * Consult factory for final qualification information ** 32us on/ 18us off pulse burst of 48 pulses; total burst width of 2400us Pulsed High Power Pallets * L&S-band pulsed radar and avionics pallets * 50 In / 50 out plug and play * SMA connector friendly * Copper heatsinks for excllent heat dissipation 2013 Short Form Catalog - Wide Band Gap SiC GaN on Sic Frequency Band (MHz) Si Bipolar Class C L-Band 1200-1400MHz Primary Surveillance Radar S-Band 2700-3500MHz Primary Surveillance Radar 1200-1400 1200-1400 1200-1400 2700-2900 2700-3100 2700-3100 (V) Typ (%) Idq Ave1 (mA) Pulse Width ( s) Duty Cycle (%) 42 50 50 36 36 38 55 52 52 45 45 45 ------- 300 300 300 300 200 200 10 10 10 10 10 10 Pout Min (W) Gain Min (dB) Vcc/Vdd 550 700 800 300 200 230 8.5 8.5 8.6 8 8 8.5 Part Number 1214-550P 1214-700P 1214-800P 2729-300P 2731-200P 2731-230P Power Solutions Modules Microsemi RFIS - TS supplies a selected to form a high power amplifier with minimal list of Power Solution Modules which design cost. The PSM units are built to consist of a pair of transistors mounted on order and delivered within a few weeks. The a copper heat spreader and have terminal photos below show at BJT as well as a GaN Power Solutions Modules impedances of 50 Ohms thereby providing version. Microsemi RFIS - TS supplies a selected list of Power Solution Modules which consist of a pair of transistors mounted on a copper heat spreader the user with a compact - ready to use and have terminal impedances of 50 Ohms thereby providing the user with a compact - ready to use ( Plug and Play) unit that can be combined to form a high power amplifier with minimal The PSM units are built to order and delivered within a few weeks. The photos below show at (Plug and Play) unit thatdesign can cost. be combined BJT as well as a GaN version. 5/28/2013 1 Joe RFIS Diode-Transistor SFC May 2013 MASTER May 17.xls 1214-550P ATC Long Range Radar 1214-700P ATC Long Range Radar 1214-800P ATC Long Range Radar 1215 - 1400 MHz 1215 - 1400 MHz 1215 - 1400 MHz SiBJT SiBJT SiBJT Pout W 550 W 700 800 2729-300P ATC Airport Surveillance 2700 - 2900 MHz SiBJT 300 8.0 36 45 300 10 2700 - 3100 MHz SiBJT 200 8.0 36 45 200 10 2700-3100 MHz SiBJT 230 8.5 38 45 200 10 Model Application ATC Airport Surveillance 2731-200P Dual Band ATC Airport Surveillance 2731-230P Dual Band Frequency Band Technology Pgain dB 8.5 dB 8.5 8.6 Vcc/Vdd Volts 42 50 50 Eff % 55 52 52 PW us 300 300 300 DF % 10 10 10 29 Pulsed Primary Radar Pulsed Primary Radar * Pulsed radar products for system operating bands: - VHF 150-160MHz - UHF 406-450MHz - P-Band 890-1000MHz - L-Band 1.2-1.4GHz & 1480-1650MHz - S-Band 2.7-3.5GHz - C-Band 4.4-5.0GHz & 5.2-6.0GHz * Characterized to meet the system signal format on parameters such as: rise and fall time, pulse droop, gain spread short pulse, long pulse and combinations, gain change vs. frequency and temperature, and power saturation * Wide band gap GaN on SiC HEMT (high electron mobility transistor) & SiC SIT (static induction transistor) semiconductor technologies2 * Si bipolar traditional high reliability technology transistor devices and products Notes to Pulsed Radar Table: Microsemi supports customer specifications and develops custom products. Please contact the factory for more information. 1 For best efficiency GaN common source class AB transistor gate is turned off when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle) 2 For UHF through C-Band pulsed radar transistors: 1st two digits are low frequency band start and 2nd two digits are band end in 100's of MHz 30 3 GN=GaN & SC=SiC in part number Pulsed Primary Radar Idq 1 Ave (mA) 500 Pulse Width ( s) 300 Duty Cycle (%) 10 VSWR Load (V) 125 Typ (%) 60 9.6 9.7 40 40 50 50 --- 250 250 11 55 155 270 440 9.5 23 33 0.35 1.2 2.5 6 5.3 12.3 20 27 40 42.7 40 50 0.4 2.5 5.5 6.3 8 12 3.5 20.5 -11.5 16 16 23 21.7 24 10 8 12.6 16 28.2 35.5 36 0.5 8 8 7.5 12 16 36 2 8 10 10 8.5 8 8 8 8.1 9.6 7.5 7 7.3 7 7.8 6.5 8 7.1 7.4 8 8.7 8.7 17 16 17 16.7 18 16.6 8 7.3 17 7.5 8 11.7 8 8.3 8.5 11.76 12.7 13.3 12.7 11 11.5 11.4 16 11 11.4 11.7 12.2 11.4 11 12.4 11 125 125 125 125 125 40 48 50 28 28 28 28 36 28 50 36 40 50 40 50 50 50 60 50 60 50 36 40 60 36 36 36 36 38 36 50 60 60 50 65 65 50 50 50 50 60 60 50 50 60 60 50 50 55 55 55 40 40 40 45 40 40 48 45 45 55 48 50 45 55 50 50 50 55 60 55 55 40 40 48 40 40 40 35 50 50 50 50 55 55 50 54 50 46 50 50 42 42 50 46 40 40 30 125 250 125 120 ---------------20 30 60 50 50 100 ---------30 30 60 60 80 100 100 10 30 30 30 50 80 150 15 30 20 110 120 170 200 380 100 70 1 9 9 12 16 36 9 7 13 10.87 10.8 11.5 11 10 10.45 10 50 50 60 60 50 50 60 60 45 42 48 35 40 40 50 39 Pout Min (W) Pin Max (W) Gain Min (dB) Vcc/Vdd (V) 550 700 800 300 200 230 ------- 8.5 8.5 8.6 8 8 8.5 42 50 50 36 36 38 Pout Min (W) 1250 Pin Max (W) 160 Gain Min (dB) 9.5 Vcc/Vdd UHF 400-500 MHz Si Bipolar Class C Common Emitter 300 500 33 54 UHF 406-450 MHz SiC SIT Class AB Common Gate 100 500 1000 1500 2200 60 150 300 2 6 12 30 32 55 110 140 220 270 300 370 20 100 280 280 500 550 20 110 500 65 100 110 125 150 170 150 150 270 270 400 500 500 20 100 110 110 200 220 450 35 100 Devices VHF 150-160 MHz SiC SIT Class AB Common Gate P-Band 890-1000 MHz Si Bipolar Class C Common Base L-Band 1200-1400 MHz Si Bipolar Class C Common Base L-Band 1200-1400 MHz GaN on SiC HEMT Class AB Common Source L-Band 1480-1650 MHz Si Bipolar Class C Common Base S-Band 2700-3500 MHz Si Bipolar Class C Common Base S-Band 2700-2900 MHz GaN on SiC HEMT Common Source Class AB S-Band 2700-3100 MHz GaN on SiC HEMT Common Source Class AB S-Band 2700-3500 MHz GaN on SiC HEMT Common Source Class AB S-Band 3100-3500 MHz GaN on SiC HEMT Common Source Class AB C-Band 4400-6000 MHz GaN on SiC HEMT Common Source Class AB 50 Pallets Si Bipolar - Class C L-Band 1200-1400MHz Primary Surveillance Radar S-Band 2700-2900MHz Primary Surveillance Radar S-Band 2700-3100MHz Primary Surveillance Radar jc Case Style Part 3 Number 10:1 (C/W) 0.15 55KT-2 10 10 20:1 20:1 0.2 0.15 M106 M102 300 300 300 300 300 150 150 150 CW CW CW 2000 5000 2000 330 5000 150 100 150 330 300 3000 300 200 300 300 200 200 400 120 200 200 100 50 100 100 100 100 100 100 100 100 200 3000 200 200 200 200 200 300 300 10 10 10 6 6 5 5 5 100 100 100 20 20 20 10 20 10 10 10 10 10 30 10 20 10 10 10 10 10 10 10 10 10 4 10 10 10 10 10 10 10 10 10 30 10 10 10 10 10 10 10 10:1 10:1 10:1 5:1 10:1 3:1 3:1 3:1 10:1 10:1 10:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 2:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 3:1 2:1 2:1 5:1 2:1 2:1 2:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1 5:1 3:1 5:1 5:1 3:1 3:1 3:1 5:1 5:1 2.5 0.3 0.15 0.15 0.15 1 0.48 0.22 14 9.0 4.5 2.0 2.3 1.0 0.65 0.55 0.25 0.22 0.29 0.29 5.39 1.1 0.35 0.57 0.16 0.24 1 0.5 0.16 0.5 0.3 1.1 0.5 0.3 0.3 0.92 1.1 0.6 0.38 0.24 0.2 0.18 4.59 1.02 0.93 1.1 0.6 0.47 0.19 2.4 1.1 55KT-FET 55KT-FET 55ST-FET 55ST-FET 55TW-FET 55AW-1 55KT-1 55KT-1 55LT 55LV 55LT 55AW-1 55AW-1 55AW-1 55KT-1 55ST-1 55ST-1 55KT-1 55ST-1 55ST-1 55KR 55KR 55KR 55KR 55KR 55KR 55LV 55AW-1 55KR 55KS-1 55KS-1 55QP-1 55KS-1 55KS-1 55KS-1 55QP 55QP 55QP 55QP 55KR 55KR 55KR 55QP 55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP 0405SC-100M 0405SC-500M 0405SC-1250M 0405SC-1500M 0405SC-2200M 0910-60M 0910-150M 0910-300M 1014-2 1014-6A 1014-12 1214-30 1214-32L 1214-55 1214-110M 1214-150L 1214-220M 1214-300 1214-300M 1214-370M 1214GN-20V* 1214GN-100LV* 1214GN-280 1214GN-280LV* 1214GN-500 1214GN-550V* 1517-20M 1517-110M 1214GN-500 3134-65M 2731-100M 2731-110M 2729-125 2931-150 2729-170 2729GN-150V* 2729GN-150 2729GN-270 2729GN-270V* 2729GN-400 2729GN-500 2729GN-500V* 2731GN-20V* 2731GN-100LV* 2731GN-110V* 2731GN-110M 2731GN-200M 2731GN-220V* 2731GN-450V* 2735GN-35M 2735GN-100M 10 30 30 60 80 100 30 30 300 300 300 300 300 300 100 100 10 10 10 10 10 10 10 5 5:1 5:1 3:1 3:1 3:1 3:1 3:1 3:1 4.32 0.68 1.1 0.6 0.38 0.19 1 0.94 55QP 55QP 55QP 55QP 55QP 55KR 55QP 55QP 3135GN-20V* 3135GN-110V* 3135GN-120M 3135GN-170M 3135GN-200V* 3135GN-400V* 4450GN-100 5259GN-70 Typ (%) Idq Ave (mA) Pulse Width ( s) Duty Cycle (%) VSWR Load 55 52 52 45 45 45 ------- 300 300 300 300 200 200 10 10 10 10 10 10 ------- jc Size (C/W) (In) ------- ------- 0150SC-1250M MS2176 MS2200 Part Number 1214-550P 1214-700P 1214-800P 2729-300P 2731-200P 2731-230P 31 Avionics * Highest performance output power devices for all pulsed L-Band avionics systems * Optimal devices for: Mode-5 IFF interrogators, Mode-S ELM transponders, TACAN, DME, Data Links, TCAS * Characterized to meet avionics system specifications on parameters such as: rise and fall time, pulse droop, gain spread multimode pulsing combinations, gain change vs. frequency and temperature, power saturation, and spectral masks * Wide band gap GaN on SiC HEMT (high electron mobility transistor)2 * Si bipolar traditional high reliability technology transistor devices and products Pin Max (W) Gain Min (dB) 1030/1090 MHz Transponder/Interrogator Silicon Bipolar Class C Common Base 150 175 400 25 25 75 7.8 8.5 7.3 (V) 50 50 50 1090 MHz Transponder Silicon Bipolar Class A Common Emitter 0.2 0.6 0.6 2 4 35 75 95 350 450 500 500 600 700 1000 1000 1000 0.02 0.05 0.05 0.25 0.4 5.6 13 10 70 90 150 150 150 150 208 158 100 10 10.9 10.9 9 10 8 7.6 9.7 6.9 7 5.2 5.2 6 6.7 6.8 8 10 400 63 450 800 1200 70 75 150 400 500 500 800 1100 1400 60 140 500 700 100 100 150 6.5 9 20 90 70 70 100 115 170 6 15.7 70 5 1090 MHz Transponder Silicon Bipolar Class C Common Base 1030 MHz Interrogator Silicon Bipolar Class C Common Base 1090 MHz TCAS Silicon Bipolar Class C Common Base 1030 MHz TCAS Silicon Bipolar Class C Common Base 1030/1090 MHz Mode-S Silicon Bipolar Class C Common Base 1030/1090 MHz MODE S-ELM Silicon Bipolar Class C Common Base 1030 MHz Mode-S ELM GaN on SiC HEMT Class AB Common Source 1030/1090 MHz Mode-S ELM GaN on SiC HEMT Class AB Common Source 1030 MHz Mode-S/TCAS/IFF GaN on SiC HEMT Class AB Common Source 32 Vcc/V dd Pout Min (W) Typ (%) Idq Pulse Ave1 Width (mA) ( s) Duty Cycle (%) VSWR Load jc Case Style Part Number (C/W) 40 40 40 ---- 10 10 10 1 1 1 30:1 30:1 20:1 0.3 0.45 0.2 M138 55CX-1 55CT-1 MS2393 TPR175 TPR400 18 18 18 28 28 50 50 40 50 50 50 50 50 50 50 50 50 ---35 35 30 -40 40 40 35 35 35 35 43 45 50 ------------------ CW CW CW 10 10 10 10 10 10 10 10 10 10 10 10 1 1 ---1 1 1 1 1 1 1 1 1 1 1 1 1 1 30:1 30:1 30:1 -----20:1 25:1 10:1 10:1 30:1 10:1 9:1 4:1 4:1 25 35 25 10 35 2 0.8 0.6 0.12 0.1 0.1 0.06 0.08 0.06 0.08 0.08 M115 M220 M115 M220 M115 M115 M115 M210 M218 M216 55CT-1 55KT-1 M112 55KT-1 55KV-1 55SW-1 55SW-1 MS2290 MS2203 MS2204 MS2201 MS2206 MS2341 MS2361 MSC1100 MSC1350M MSC1450M TPR500 TPR500A MS2473 TPR700 TPR1000 ITC1000 ITC1100 8 50 45 -- 32 2 15:1 0.17 M216 6.5 9 9 10.3 9.2 10 6.5 8.5 8.5 9 9.4 9.1 10 9.5 8.5 21.5 45 45 50 50 50 50 45 50 50 50 50 52 50 50 50 65 35 45 45 35 48 40 35 45 45 40 40 45 40 50 55 70 ---------------65 32 32 32 128 32 128 32 32 32 128 128 32 2400 2400 2400 2400 2 1 2 1 2 1 1 2 2 1 1 2 6.4 6.4 6.4 6.4 10:1 4:1 4:1 5:1 10:1 3:1 10:1 4:1 4:1 4:1 4:1 3:1 2:1 2:1 3:1 3:1 0.06 0.09 0.02 0.8 0.86 0.5 0.15 0.12 0.12 0.12 0.02 0.025 0.5 0.15 0.15 0.25 55KT-1 55SM-1 55TU-1 55CX-1 M214 55AW-1 55KT-1 55ST-1 55SM-1 55ST-1 55TU-1 55TU-1 55AW-1 55AW 55ST-1 55KR 6.4 3:1 0.25 55KR 6.4 3:1 0.24 55KR 2 3:1 0.12 55KR 650 5 20.8 65 65 750 14.1 17.2 50 68 100 2400 100 2400 1000 17.8 17.5 50 55 100 32 MS2207 TCS450 TCS800 TCS1200 MDS70 MS2228 MDS150 MDS400 10500 10502 MDS800 MDS1100 MDS1400 MDS60L MDS140L MDS500L 1011GN-700ELM MDS-GN-650ELM MDS-GN-750ELMV* 1011GN-1000V* Avionics 960-1215 MHz DME/TACAN Si Bipolar Class C Common Base 1025-1150 MHz Air DME Si Bipolar Class A CW Common Emitter 1025-1150 MHz Air DME Si Bipolar Class C Common Base 1025-1150 MHz Air DME GaN on SiC Class AB Common Source 960-1215 MHz Data Link Si Bipolar Class C Common Base 960-1215 MHz TACAN Si Bipolar Class C Common Base 960-1215 MHz HD Data LInk GaN on SiC HEMT Class AB Common Source Vcc/ Vdd jc Typ (%) Idq Ave1 (mA) Pulse Width ( s) Duty Cycle (%) VSWR Load 25 30 45 45 -- ------ 10 10 10 10 CW 1 1 1 1 -- 10:1 10:1 10:1 10:1 10:1 3.5 2 1.4 0.8 33 55CT-1 M105 55CT-1 55CT-1 55FW-2 0912-7 MS2321 0912-25 0912-45 1000MP 35 35 35 28 28 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 45 35 35 35 -35 -45 43 48 45 -45 --40 40 40 35 40 -40 35 -40 60 -------------------------100 20 10 10 10 10 10 -10 10 10 10 -10 10 10 10 10 10 10 10 10 10 10 10 10 20 1 1 1 1 1 1 -1 1 1 1 -1 1 1 1 1 1 1 1 1 1 1 1 1 6 10:1 20:1 20:1 20:1 20:1 10:1 -10:1 20:1 20:1 10:1 -10:1 20:1 20:1 20:1 20:1 20:1 30:1 30:1 30:1 25:1 10:1 30:1 5:1 3:1 10 10 7 5 8 2 -1 1 1 0.8 1 0.8 0.6 0.6 0.6 0.3 0.2 0.2 0.2 0.12 0.12 0.1 0.06 0.05 0.21 55FW-1 M115 55FW-1 M220 M115 55FW-1 M115 55FW-1 M220 M115 55FW-1 M115 55FW-1 M115 M105 55AY-1 M218 M218 M103 55AT-1 M112 M216 55KT-1 M112 55ST-1 55KR 1002MP MS2202 1004MP MS2205 SD1526-01 1015MP MSC1015MP 1035MP MS2553 MS2575 1075MP MSC1075MP 1090MP SD1536-03 SD1536-08 DME150 MSC1175M MS2554 MS2421 DME375A MS2441 MSC1400M DME500 MS2472 DME800 DME-GN-700V* 28 28 36 35 36 36 35 36 35 40 50 50 50 50 50 50 50 50 50 50 50 50 65 50 65 50 45 45 40 40 40 40 40 45 45 40 40 38 38 40 38 38 45 38 40 40 55 55 55 55 55 58 --------------------10 30 50 50 100 100 6.4 10 10 6.4 10 10 6.4 7 7 20 20 10 20 20 20 10 20 10 10 10 128 3000 128 128 128 128 21 21 40 21 22 40 21 22 21 5 5 10 5 5 5 10 5 10 10 10 10 30 10 10 10 10 5:1 20:1 5:1 15:1 10:1 3:1 5:1 3:1 -10:1 30:1 -10:1 5:1 -15:1 5:1 15:1 3:1 3:1 5:1 3:1 3:1 3:1 3:1 3:1 7 3 1.8 2.2 0.8 0.8 0.75 0.5 0.57 1 0.6 0.8 0.3 0.3 0.28 0.16 0.15 0.16 0.12 0.07 6.56 1.07 0.3 0.44 0.2 0.23 M222 M222 55AT-1 M214 55AT-1 55AT-1 M218 55KT-1 M216 55LT-1 55AZ-1 M218 55AT-1 55AT-1 M214 M216 55KT-1 M216 55ST-1 55ST-1 55KR 55KR 55KR 55KR 55KR 55KR MS2211 MS2212 JTDB25 MS2213 JTDA50 JTDB75 MS2214 JTDA150A MS2215 TAN15 TAN75A MS2209 TAN150 TAN250A MS2267 MS2210 TAN300 MS2272 TAN350 TAN500 0912GN-20V* 0912GN-100LV* 0912GN-300 0912GN-300V* 0912GN-600 0912GN-650V* Pout Min (W) Pin Max (W) Gain Min (dB) 7 15 25 45 0.6 1 1.5 3.5 7 0.05 8.5 10 8.5 8.1 10.8 (V) 50 50 50 50 18 2 2 4 4 5 15 15 35 35 35 75 75 90 90 90 150 175 250 300 375 400 400 500 550 800 700 0.3 0.25 0.5 0.5 0.55 1.5 1.5 3.5 3 3 12 13 14 13 13 25 30 60 70 85 90 90 125 150 100 12.6 10 9 9 9 9.5 10 10 10 10.6 10.7 7.8 7.6 8.1 8.4 8.4 7.8 7.6 6.2 6.3 6.4 6.5 6.5 6 5.6 9 17.4 6 15 25 30 50 75 85 145 150 15 75 90 150 250 250 300 300 350 350 500 20 100 300 300 600 650 0.7 2.3 5 5 10 15 15 25 26.7 3 12 13 30 60 40 60 60 60 70 70 0.4 2.5 4 6.3 8 11.2 9.3 8.1 7 7.8 7 7 7.5 7.6 7.5 7 8 8.4 7 6.2 8 7 7 7.6 7 9 17 16 17.5 16.8 18 17.6 Case Style Part Number (C/W) Microsemi supports customer specifications and develops custom products. Please contact the factory for more information. 1 For best efficiency GaN common source class AB transistor gate is turned off when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle) 2 "GN" in part number denotes a GaN on SiC device Burst of 0.5us ON/0.5us OFF x128 repeated at 6.4ms Burst of 32us ON/18us OFF x 48 repeated at 24ms *Consult factory for final qualification information 33 High Reliability Transistors Microsemi Transistor Solutions: Hi Rel Screening Capability and Products Post Production Screening Tests One hundred percent electrical screening of finished product is performed to guarantee that products comply with the customer supplied specification or data sheet. One hundred percent reliability testing is designed to remove latent failures and is also performed on all Microsemi RF & microwave power transistor products. These tests are designed with a "screening by failure model" philosophy in mind. Our standard 100% processing is detailed in Table I. Standard 100% processing complies with MIL-STD-883 and MIL-STD-750. Application UHF Comm S-Band Telem Avionics Freq Range Power Out (W) 100-500 MHz 50 225-400MHz 125 500-1000MHz 50 2200-2400 MHz 6 2200-2500MHz 4 2300-2400 MHz 20 1030/1090MHz 600 Pk 1030 MHz 1100 Pk 960-1215MHz Qualification Tests All hermetic (solder sealed) Microsemi RF & microwave power transistor devices are capable of passing the standard matrix of environmental testing per MIL-STD-750. The tests stress the hermetic seal, the lead attachment and in general assure that the devices which pass the test matrix are inherently reliable in severe military-type environments. The tests are outlined in Table 2. Samples of current production, as well as samples of any new package design, are routinely subjected to this standard test matrix. Data exists in reliability files verifying conformance of Microsemi transistor devices in various packages to the environmental test sequence. This test matrix complies with MIL-STD-750. Application Model Freq Range Class A 23003H/HS 1000-2300 MHz 0.3 23A008H/HS 1000 - 2300 MHz 0.8 UHF Radar 0405SC-1000MH 406 - 450 MHz P-Band Radar 0709-50H 650-850 MHz 50 Pk 0709-240H 650-850 MHz 240 Pk 0709-500H 650 - 850 MHz 500 Pk L-Band Radar 75 Pk Power Out (W) 1000 pk 1014-6AH 1215-1400 MHz 6 1214-30H 1215-1400 MHz 30 pk 960-1215MHz 250 Pk 1214-55H 1214-1400 MHz 55 pk 960-1215MHz 350 Pk 1214-300HS 1215-1400 MHz 300 pk 2729-170H 2700-2900 MHz 170 Pk 960-1215MHz 75 pk 960-1215MHz 150 pk S-Band Radar Table 1 MIL-STD-750 or TS (as noted) TEST Notes: 1. Destructive test on line monitor of production equipment A) Standard Manufacturing Testing B) Reliability Testing C) High Reliability Screening 34 TEST METHOD Wafer Probe -- DC Wafer Probe Spec SEM Wafer Inspection MIL-STD-883 Wafer Qual DC/RF Electrical Level A B C JANTXV 100% 100% 100% 100% -- -- OPT All Wfr All Wfr All Wfr -All Wfr Die Visual TS Specification 100% 100% 100% 100% Die Shear 2017 Note1 Note1 Note1 Note1 Bond Strength 2037 Note1 Note1 Note1 Note1 Precap Visual 2072 AQL 100% 100% 100% 100% Electrical TS Specification 100% 100% 100% 100% Storage 1032 -- OPT 100% 100% Temperature Cycling 1051 Condition D -- OPT 100% 100% Constant Acceleration 2006, Y1 -- OPT 100% 100% PIND Test 2052 -- OPT 100% 100% Gross Leak 1071.1 Condition H 100% 100% 100% 100% Fine Leak 1071.1 Condition C AQL 100% 100% 100% 100% HTRB 1039 Condition A, 48 hrs -- Burn - In 1039 Condition B -- 100% 100% 100% 100% DC Electrical Product Specification 100% 100% 100% 100% RF Electrical Product Specification 100% 100% 100% 100% Ext Visual / Mechanical 2071 AQL AQL AQL -- Final QA TS Specification AQL AQL AQL -- Group A,B,C Done on Request -- -- LTPD LTPD High Reliability Transistors Hi Rel Screening Table 2 MIL-STD-750 EXAMINATION OR TEST METHOD CONDITION Class B LTPD 2066 Test Condition A 15 (a) Marking Permanency 2008 Test Condition B 3.2.1 4 devices ( no failures) (b) Visual & Mechanical 2071 Test Condition B 1 device ( no failures) (c) Bond Strength 2037 Test Condition D 15 (d) Die Shear 2017 2026 Soldering temp of 260+ 10oC 15 Leads 2036 Test Condition B2 15 Group B Tests Subgroup 1 Physical Dimensions Subgroup 2 Subgroup 3 Solderability Subgroup 4 Terminal Strength Seal 1071 (a) Fine Condition H (b) Gross Condition C Group C Tests Subgroup 1 Thermal Shock 1011 Test Condition B Temperature Cycling 1010 Test Condition C Moisture Resistance 1004 Seal 1014 (a) Fine Condition H (b) Gross Condition C End Point electrical parameters 15 As Specified Subgroup 2 Mechanical Shock 2016 Vibration Variable 2056 Constant Acceleration 2006 Seal 1071 (a) Fine 15 Condition H (b) Gross Condition C End Point Electrical parameters As Specified Subgroup 3 Salt Atmosphere 3 Axis 15 1041 35 HF / VHF / UHF Communications HF Industrial/Communications * 2-175MHz single ended or balanced transistors Si bipolar for Class AB/C operation * 1-250W CW or Pulsed at 28V & 50V * RF Power for FM/SSB mobile and base stations, high power amplifiers, and industrial, scientific, and medical equipment VHF Communications * 50-175MHz single ended or balanced transistors for common emitter class C operation Si Bipolar * 1-150W CW biased at 12.5V, 28V, or 50V * AM/FM mobile and base station applications UHF Communications * Common emitter and common base class C singleended and balanced Si bipolar transistor * 225-400MHz, 1.5-125W, 12.5V or 28V * 450-512MHz, 1-45W at 12.5V * 836-960MHz, 1-45W at 12.5V Military Communications * 100-500MHz, 1-125W CW, 28V, ClassA/AB/C singleended or balanced Si bipolar transistors HF Si Bipolar Class AB 2-30 MHz Common Emitter HF/VHF/UHF Si Bipolar Class C HF 2-50 MHz Common Emitter VHF 100-175 MHz Common Emitter 36 Pout Min (W) 100 130 150 150 220 220 250 250 Pout Max (W) 7.9 8.2 6 6 13.9 11 10 10 Gain min (dB) 11 12 14 14 12 13 14 14 Pout Min (W) 20 30 75 200 250 0.75 1 1.4 1.75 2.5 3 4 10 10 10 10 15 15 20 20 Pin Max (W) 0.65 0.48 3.8 12 9 0.015 0.1 0.1 0.125 0.2 0.5 0.25 0.1 0.1 1 1 1 3.5 3 3 Gain Min (dB) 15 18 14 12 14.5 17 10 12 12 11.5 8 12 10 10 10 10 12 6.3 8.2 8.2 Vcc (V) 12.5 28 50 50 28 50 50 50 Vcc (V) 12.5 28 12.5 50 50 12.5 12.5 7.5 12.5 7.5 12.5 12.5 12.5 12.5 28 28 12.5 12.5 28 28 Typ (%) 50 50 50 50 50 50 50 50 Typ (%) 60 60 60 60 37 -50 50 50 50 50 50 --55 55 60 60 55 60 Icq (mA) 150 150 100 100 750 150 150 150 Cob (pF) 100 -350 300 360 4 4 6 15 19 15 20 45 45 15 15 45 10 35 35 continued next page VSWR Load 20:1 20:1 20:1 20:1 20:1 20:1 20:1 20:1 VSWR Load 20:1 20:1 20:1 30:1 20:1 --20:1 -20:1 --20:1 20:1 20:1 20:1 20:1 20:1 -20:1 jc (C/W) 0.6 1 0.75 0.75 0.7 0.7 0.4 0.4 jc (C/W) 2.2 2.2 2.2 0.65 0.4 125 175 35 35.7 11.6 35 22 8.75 8.75 13.5 13.5 8.75 5.6 5.83 5.8 Case Style Part Number M174 M174 M174 M164 M174 M174 M177 M177 MS1051 MS1078 MS1007 MS1008 MS1076 MS1079 MS1004 MS1011 Case Style Part Number M113 M113 M174 55HX-2 M177 SO-8 TO-39 M123 TO-39 M123 TO-39 TO-39 M135 M113 M135 M113 M122 M113 M113 M135 MS1227 MS1226 MS1001 S200-50 MS1004 SRF4427 2N4427 MS1403 MRF607 MS1401 2N6255 SD1127 SD1143 SD1143-01 SD1013 SD1013-03 MS1261 SD1014-06 MS1408 MS1406 HF / VHF / UHF Communications HF/VHF/UHF Si Bipolar Class C UHF 225-400 MHz Common Emitter UHF 100-500 MHz Common Emitter UHF 470 MHz General Purpose UHF 836-960 MHz General Purpose Pout Min (W) 30 30 30 30 30 40 40 40 40 40 60 80 100 100 100 150 3 10 10 10 25 60 70 80 100 100 100 125 50 100 2 2 3 5 5 10 10 15 15 25 1.5 45 Pin Max (W) 3 3 3 3 3 7 5 5 14 14 12 10 25 25 20 18 0.2 0.65 1 1 3.2 8 10 10 20 19 16 25 7 28.2 0.2 0.32 0.34 0.7 0.5 2 2.5 2.5 2.7 6 0.24 15 Gain Min (dB) 10 10 10 10 10 7.6 9 9 4.5 4.5 7 9 6 6 7 9.5 11.8 12 10 10 8.9 8.8 8.5 9 7 7.2 8 8.5 8.5 5.5 10 8 9.5 8.5 10 7 6 7.8 7.5 6.2 8 4.7 Vcc (V) 13.5 12.5 12.5 28 13.5 28 13.6 13.6 12.5 12.5 28 27 28 12.5 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 28 -50 50 50 60 --50 --12.5 12.5 Typ (%) 55 ---55 60 55 -70 70 55 65 50 -60 70 60 50 60 50 50 60 50 60 60 55 55 60 55 55 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 12.5 60 -- Cob (pF) 95 120 120 250 95 65 95 95 200 200 80 75 150 390 220 150 4.5 12 11.5 11.5 22 70 65 80 100 120 120 70 52 100 10 15 12 19 15 26 30 50 50 70 6 100 VSWR Load 20:1 10:1 10:1 -20:1 20:1 20:1 -10:1 10:1 20:1 30:1 -10:1 30:1 20:1 30:1 -30:1 10:1 5:1 5:1 20:1 5:1 -5:1 4.5:1 -5:1 5:1 ---20:1 -20:1 --20:1 20:1 -20:1 jc Case Style (C/W) 1.2 M135 1.2 M135 1.2 M113 4.4 M135 1.2 M113 2.9 M135 1.2 M135 1.2 M113 2.2 M135 2.2 M113 2.3 M135 2 55HT-2 0.75 M174 0.65 M111 0.65 55HV-2 0.75 M174 16 55FT-2 6.4 M123 6.3 55FT-2 6.3 55FU-2 2.5 55HV-2 1.25 55HW-2 0.8 M111 0.8 55HV-2 0.7 M111 0.7 55HV-2 0.7 55JU-2 0.65 55JT-2 1.25 55JT-2 0.67 M168 35 M122 35 TO-39 35 TO-39 11.6 M122 11.6 M123 3 M122 4.7 M122 4.6 M142 4.6 M111 M111 2.5 25 Pwr Macro 1.2 M142 Part Number MS1504 MS1336 MS1337 SD1015 MS1505 SD1224 MS1506 MS1507 SD1018 SD1018-06 MS1329 VAM80 MS1204 MS1003 VMIL100 MS1281 UMIL3 MS1642P UMIL10 UMIL10P UMIL25 UMIL60 MS1511 UMIL80 MS1503 UMIL100 UMIL100A 0204-125 0105-50 MS1509 MS1402 SD1444 MS1649 MS1404 MS652S MS1426 SD1146 MS1263 SD1429-03 SD1422 MRF557 MS1455 37 General Purpose & Small Signal Small Signal * Thru-hole metal cans, plastic Macro, SO-8, SOT-23 and SOT-143 * Transistors for common emitter class A operation up to 1 GHz packages * Device gain >10dB with NF<2.5dB at 5, 7.5, 10, 12, and 15VDC * Applications include: PA stage for hand-held radios & low power * Applications include: gain blocks, low noise amplifiers, and amplifier driver stage oscillators Small Signal Up to 1 GHz Si Bipolar Class A Common Emitter Freq (MHz) 100 200 200 250 250 300 300 400 500 500 500 500 500 500 500 1000 1000 Freq (MHz) 1500 1200 1400 1400 1500 3000 3000 1200 1300 1400 1600 4500 4500 5000 5000 4000 6000 GNF (MHz) 20 12 13.5 13.5 12 10 12 20 14 13 15 16 18 7 11 VCE (V) 6 15 6 25 25 15 15 6 5 10 10 1.5 10 5 5 10 10 Ic (mA) 5 50 1.5 50 50 40 60 1 25 14 12 3 15 30 14 15 10 NF min (dB) 4.5 -4.5 ---2.5 -2.5 5 5.5 3 2.5 1.9 2.5 1.5 2.9 Case Style TO-72 TO-39 SOT-23 TO-39 TO-39 TO-39 TO-39 TO-72 TO-72 TO-72 TO-72 SOT-23 TO-72 Macro T Macro T TO-72 SOT-23 Part Number 2N5179 2N5109 MMBR5179LT1 MRF545 MRF544 MRF586 MRF517 2N5031 BFY90 2N6304 2N2857 BFR92ALTI MRF914 BFR91 BFR90 MRF904 MMBR911LT1 Power Devices * Transistors for common emitter class A, B, and C operation up to 1 GHz * Thru-hole metal cans, plastic Macro, and SO-8 packages * Applications include: land mobile and RFS radios, wireless alarms, * Device gain >8dB & Pout up to 4W at 7.5V and 12V and keyless entry * Mobile and held and mobile predriver amplifier applications Power Devices Up to 1 GHz Si Bipolar Class A/B/C Common Emitter 38 Freq (MHz) 175 175 175 175 175 400 400 400 470 470 870 870 Supply (V) 12.5 12.5 12.5 12.5 12.5 28 28 28 12.5 12.5 12.5 12.5 Pout (W) 1 1 1.75 3 4 1 1 1 3 2 0.75 1.5 Gain (dB) 10 17 11.5 7.8 12 10 10 10 10 8 8 8 Style Packing TO-39 SO-8 TO-39 TO-39 TO-39 TO-39 TO-39 SO-8 TO-39 TO-39 Pwr Macro Pwr Macro 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk 500 Units Bulk Part Number 2N4427 SRF4427 MRF607 2N6255 SD1127 2N3866 2N3866A MRF3866 MS1649 SD1444 MRF837 MRF557 Broadcast / TV VHF TV Broadcast * 50-175MHz single ended or balanced transistors for common emitter class A & AB ope UHF TV Broadcast * 0.5-250W Psync with 28-32V Vcc VHF TV Broadcast * 50-225MHz single ended or balanced Si Bipolar * 50-175MHz single ended or balanced transistors for common emitterUHF class TV Broadcast transistors for common emitter class A & AB operation A & AB operation * 50-225MHz single ended or balanced Si Bipolar transistors for common emitter class A * 0.5-150W * 0.5-150W Psync with Vcc of 28VPsync with Vcc of 28V * 0.5-250W Psync with 28-32V Vcc BROADCAST / TV Freq VHF TV 174-225 MHz Class A/AB Common Emitter UHF TV 470-860 MHz Class A Common Emitter UHF TV 470-860 MHz Class AB Common Emitter UHF 860-960 MHz Class A/AB Common Emitter (MHz) 225 225 225 225 225 860 860 860 860 860 860 860 860 Pout Min (W) 14 20 20 100 200 0.5 1 2 4 8 12 20 100 Gain Min (dB) 14 8 7.5 11 11 10 10 10 8.5 9 8.9 8.5 8.5 (V) 28 25 28 28 32 20 20 25 25 26.5 26.5 26.5 28 860 860 860 860 860 860 860 860 960 960 0.5 1 2 4 14 25 30 150 0.9 30 9.5 10 8.5 7 8.5 9 7.5 6.5 9.5 20 20 25 25 25 25 24 28 24 MICROWAVE Microwave ------50 45 -24 Icq VSWR Load (mA) 2.5 2.5 3.5 0.2 1 0.22 0.44 0.41 0.85 1.7 1.7 2.7 0.3 IMD Typ (dB) -55 -50 -50 -50 -50 -60 -60 -60 -60 -58 -52 -48 -- 0.22 0.44 0.45 0.85 1.65 3.2 0.06 2x0.5 0.125 -60 -60 -60 -60 -45 -45 -60 --- ---------- -----30:1 30:1 30:1 30:1 3:01 3:01 3:01 5:01 jc Case Style (C/W) 1.5 M111 1.2 M130 1.2 M164 1.2 M168 0.45 M175 22 55FT-2 12 55FT-2 10 55FT-2 7 55FT-2 2.5 55JV-2 1.6 55JT-2 1.2 55JV-2 0.6 55RT-2 5.5 9 11 5.5 2.5 1.3 2 0.55 20 M122 M122 M122 M122 M156 M173 M142 M175 M123 M142 Part Number MS1277 MS1279 MS1280 MS1278 SD1485 UTV005 UTV010 UTV020 UTV040 UTV080 UTV120 UTV200 UTV8100B MS1502 MS1512 MS1501 MS1581 MS1579 MS1582 MS1454 MS1533 SD1420-01 MS1453 * Si Bipolar Common Base Class C operation Each deviceand fullyglass tested to the specification * All gold *metalization passivation for high reliability and long term operation * Each device fully tested to the specification Freq 2.3 GHz Si Bipolar Class C Common Base Typ (%) ------------55 * All gold metalization and passivation for high reliability and long t * Si Bipolar Common Base Class C glass operation Cob (V) Typ (%) 28 28 28 28 20 20 20 40 35 40 35 40 40 40 4 3.2 5 9.5 4 7 10 30:1 30:1 30:1 -30:1 10:1 10:1 Gain min (dB) Vcc Cob VSWR Load Pout Max (W) Gain min (dB) Vcc (MHz) Pout Min (W) 2000 2000 2000 2000 2300 2300 2300 1 1 3 3 1.5 4 7 0.125 0.2 0.47 0.5 0.24 0.63 1.1 9.5 7 8.6 7.8 8.5 8.5 8.5 Freq Pin Max (W) Microwave 2.0 GHz Si Bipolar Class C Common Base Vcc VSWR Load (pF) jc Case Style Part Number 35 25 15 8 31 17 8.5 55BT-1 M210 55BT-1 M210 55BT-1 55BT-1 55BT-1 2001 MS3022 2003 MS2003 2301 2304 2307 jc Case Style Part Number (C/W) (MHz) Pout Min (W) (V) Typ (%) 1000 -1400 MHz Si Bipolar Class C Common Base 1000 - 1400 1000 - 1400 6 12 1.2 2.5 7 7.3 28 28 40 40 6.5 12 10:1 30:1 9 4.5 55LV-1 55LT-1 1014-6A 1014-12 1700-2000 MHz Si Bipolar Class C Common Base 2200 - 2300 2200 - 2400 2200 - 2500 2400 - 2470 1.7 6 3.5 25 0.25 1.2 0.5 4.4 8.5 7 8.5 7.5 22 22 24 24 35 40 40 49 --7 -- 10:1 10:1 10:1 3:1 24 8 17 2.5 55LV-1 55LV-1 55LV-1 55AP-1 2223-1.7 2224-6L 2225-4L 2424-25 Microwave Broadband (pF) (C/W) 39 Linear/Communications/Bias Linear * Class A driver transistors for applications from 1MHz-2.3GHz and power levels from 0.25-20W * Class A driver transistors for applications from 1MHz-2.3GHz and power levels from 0.25-20W * Emitter balasted transistors are fully tested under bias conditions for linearity, power gain, load mismatch tolerance 2013 Short Form Catalog - Linear 2013 Short Form Catalog - Linear Si Bipolar Class A Common Emmiter Si Bipolar Class A Common 100-500Emmiter MHz 100-500 MHz 500-1000MHz 500-1000MHz 500-1000 MHz Internal Pre-match 500-1000 MHz Internal Pre-match 1.0-2.0 GHz (Operational from DC to 2.0 GHz) 1.0-2.0 GHz (Operational from DC to 2.0 GHz) 2.0-2.3 GHz, Class A, Common Emitter (Operational from DC to 2.3 GHz) 2.0-2.3 GHz, Class A, Common Emitter (Operational from DC to 2.3 GHz) Freq 1-500 (MHz) Pout Min Pout (W) Min 0.5 (W) Pin Max Pin (W) Max 0.02 (W) Gain min Gain (dB) min 12 (dB) 1-500 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 1000 2000 2000 2000 2000 2000 2000 2000 2000 2300 2300 2300 2300 2300 2300 2300 2300 2300 2300 2300 2300 0.5 0.5 1.5 0.5 3 1.5 6 3 6 5 20 5 20 0.11 0.5 0.11 0.8 0.5 1 0.8 1 0.3 0.5 0.3 0.8 0.5 1.7 0.8 2.5 1.7 1 2.5 1 0.02 0.08 0.2 0.08 0.5 0.2 0.95 0.5 0.95 0.5 3 0.5 3 0.012 0.1 0.012 0.15 0.1 0.2 0.15 0.2 0.03 0.07 0.03 0.14 0.07 0.34 0.14 0.6 0.34 0.16 0.6 0.16 12 9 9.5 9 9 9.5 8.5 9 8.5 10 8 10 8 9 7 9 7 7 7 7 7 10 9.5 10 9.5 9.5 7.6 9.5 6.5 7.6 10 6.5 10 Freq (MHz) COMMUNICATIONS LINEAR jc jc (C/W) (pF) VSWR Load VSWR Load 30:1 2 3.8 2 7.3 3.8 10.8 7.3 10.8 16 40 16 40 2.5 2 2.5 2 2 5 2 5 2.5 2.4 2.5 3 2.4 4.8 3 6.5 4.8 3.4 6.5 3.4 30:1 30:1 30:1 30:1 6:1 30:1 10:1 6:1 10:1 30:1 30:1 30:1 30:1 20:1 30:1 20:1 6:01 30:1 15:1 6:01 15:1 9:1 6:1 9:1 10:1 6:1 6:1 10:1 10:1 6:1 30:1 10:1 30:1 Vcc Icq Cob Vcc (V) Icq (pF) Cob (pF) 12.5 (V) 0.25 (pF) 12.5 20 20 20 20 20 20 20 20 20 20 20 20 18 20 18 20 20 18 20 18 15 20 15 20 20 20 20 20 20 15 20 15 0.25 0.14 0.22 0.14 0.44 0.22 0.88 0.44 0.88 1 2.8 1 2.8 0.05 0.14 0.05 0.18 0.14 0.22 0.18 0.22 0.1 0.12 0.1 0.14 0.12 0.27 0.14 0.42 0.27 0.2 0.42 0.2 33 (C/W) Case Style Case Style 55AZ-2 Part Number Part Number MPA201 33 33 29 33 12.5 29 8.3 12.5 8.3 7 1.5 7 1.5 45 33 45 33 33 17 33 17 45 35 45 35 35 16 35 11 16 30 11 30 55AZ-2 55ET-2 55FT-2 55ET-2 55FT-2 55FT-2 55FT-2 55FT-2 55FT-2 55CT-2 55AT-2 55CT-2 55AT-2 M210 55ET-2 M210 55EU-2 55ET-2 M210 55EU-2 M210 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 55BT-2 MPA201 1A5 10A015 1A5 10A030 10A015 10A060 10A030 10A060 10AM05 10AM20 10AM05 10AM20 MSC80064 2A5 MSC80064 2A8 2A5 MS3011 2A8 MS3011 23A003 23A005 23A003 23A008 23A005 23A017 23A008 23A025 23A017 80143 23A025 80143 * Broadband, high power class AB linear transistor * Broadband, power class AB linear transistor power output coveringhigh the full 500-1000MHz range Communications Linear** Highest Broadband, high power class AB linear transistor COMMUNICATIONS LINEAR Freq Si Bipolar Class AB Common Emitter Si Bipolar Class AB Common Emitter 500-1000 MHz Freq (MHz) 500-1000 MHz 1000 1000 (MHz) * Highest Pout Min Pout (W) Min 50 (W) 50 power output covering full 500-1000MHz * Highest powertheoutput covering range the full VSWR Pin Gain Vcc Icq Load Max min Typ VSWR Pin Gain Vcc Icq (W) (dB) (V) (pF) (%) Load Max min Typ 10 7 28 0.1 50 30:1 (W) (dB) (V) (pF) (%) 10 7 28 BIAS DEVICES Bias Devices * Designed for use in the biasing of high power 5/26/2013 silicon transistors *5/26/2013 Feature excellent thermal tracking to provide the highest performance over the entire operating temperature range 40 Bias Current (A) 0.35 0.35 1 TO 0.35 1 0.35 0.35 500-1000MHz range jc jc (C/W) 1.4 (C/W) Case Style Case Style 55AV-2 Part Number Part Number 0510-50A * Designed for use 30:1 in the biasing power silicon transistors 0.1 50 1.4 of high 55AV-2 0510-50A * Feature excellent thermal tracking to provide the highest performance over the entire operating temperature range Resistance Case Style Part Number (Ohm) 1 55FV BYI-1 1 Diode-Transistor 55GV SFCBYI-1F RFIS May 2013 MASTER WBG May 25.xls 1 55GU Z0-28F RFIS Diode-Transistor SFC May 2013 MASTER WBG May 25.xls 1 55FU BYI-1Z 1 55LU Case Styles 55AP 55AR 55AT 55AV 55AW 55AY 55AZ 55BT 55CT 55CX 55ET 55FT 55FU 55FW 55HT 55HV 55HW 55HX 55JT 55JU 55JV 55KT 55KS 55KV 55LT 55LU 55LV 55QM 55QX 55QZ 55RT 55SM 55ST 55SW 55TU 41 Case Styles M102 M103 M105 M106 M111 M112 M113 M115 M122 M123 M138 M142 M156 M130 M135 M164 M168 M173 M174 M175 M177 M198 M208 M210 M214 M216 M218 M220 M222 Macro T Macro X Power Macro SO-8 42 TO-247 TO-39 TO-72 Notes 43 Diode Products: Power Transistor Products: Microsemi Corporation Microsemi Corporation RF Integrated Solutions RF Integrated Solutions 75 Technology Drive 3000 Oakmead Village Drive Lowell, MA 01851-5293 Santa Clara, CA 95051-0808 +1.978.442.5600 +1.408.986.8031 +1.978.937.3748 +1.408.986.8120 www.microsemi.com email: sales.support@microsemi.com Microsemi Corporate Headquarters One Enterprise, Aliso Viejo, CA 92656 USA Within the USA: +1 (949) 380-6100 Sales: +1 (949) 380-6136 Fax: +1 (949) 215-4996 email: sales.support@microsemi.com www.microsemi.com 44 Microsemi Corporation (Nasdaq: MSCC) offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance, radiation-hardened and highly reliable analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and voice processing devices; RF solutions; discrete components; security technologies and scalable anti-tamper products; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, Calif., and has approximately 3,000 employees globally. Learn more at www.microsemi.com. (c)2013 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks and service marks are the property of their respective owners. MS4-009-13