RF & Microwave Diode and Transistor Products
Power Matters.
Within this short form catalog are the combined product selection guides for Microsemi RF Integrated
Solutions (RFIS) business unit RF & microwave diodes and power transistors. RFIS diode products are
primarily designed, manufactured, and tested at our Lowell Massachusetts facility and the power transistors
are primarily designed, manufactured, and tested at our Santa Clara California facility. For sales and technical
assistance consult our website, manufacturer’s representative or distributor in your area, or contact the
appropriate organization directly:
Microsemi RFIS Integrated Solutions
RF & Microwave Diode and Transistor Products
Diode Products:
Microsemi Corporation
RF Integrated Solutions
75 Technology Drive
Lowell, MA 01851-5293
+1.978.442.5600
+1.978.937.3748
Power Transistor Products:
Microsemi Corporation
RF Integrated Solutions
3000 Oakmead Village Drive
Santa Clara, CA 95051-0808
+1.408.986.8031
+1.408.986.8120
www.microsemi.com
email: sales.support@microsemi.com
2
Table of Contents
Diode Products
Overview: Diode Products 4
PIN Diodes Selection Guide 5
Power Handling Reference 6
GC4200 Series: Small Signal/High Speed Switching 7
GC4400 Series: Large Signal Switching/Attenuator 7
GC4700 Series: Limiter PIN Diodes 8
GC4800 Series: Planar Beam Lead PIN’s 8
GC4900 Series: Mesa Beam Lead PINs 8
SM Ceramic MELF PINs 9
RoHS and MRI Models 9
Monolithic Microwave Surface Mount PIN Diodes 10
MRI PIN Diode Selector Guide 11
Power PIN Diodes for Switching and Attenuation 12
Schottky Diodes Selector Guide 13
Enhanced Performance Surface Mount Products 14
Varactor Performance Guide 15
Tuning Varactor Selector Guide 16
MMSM Varactor Diodes 17
GaAs Varactor Diodes 18
Gunn Diodes 19
Comb Generators 20
Surface Mount Limiter 20
Pin Diode Limiter Assemblies 21
Switch Components 22
RF, Microwave & mmWave Packages 23-25
Power Transistor Products
About RF & Microwave Power Transistor Products 26-27
GaN & SiC & SiC Wide Band Gap 28
Pulsed High Power Pallets 29
Pulsed Primary Radar 30-31
Avionics 32-33
High Reliability Transistorsb 34-35
HF/VHF/UHF Communications 36-37
Broadcast / TV 38
Microwave 38
General Purpose & Small Signal 39
Linear Class A & AB 40
Bias Devices 40
Transistor Case Styles 41-42
3
RF & Microwave Diode and Control Components
Microsemi’s RF diode and control component opera-
tions, located in Lowell, Massachusetts, brings over
30 years experience in manufacturing of high reliability
RF and microwave products. We supply a full range
of Silicon and Gallium Arsenide diodes, including PIN
and limiter diodes, tuning and multiplier varactors,
noise diodes, Schottky-barrier diodes, MNS chip
capacitors and Gunn Diodes. We are able to leverage
these best in class products in our solid state control
components and sensor products. Our extensive
product base allows us to support frequencies from
100 Hz through millimeter wave.
With high volume wafer fabrication now in place to
meet the competitive needs of our growing commer-
cial and medical customer base, Microsemi’s Lowell
facility can deliver more cost-effective components
faster than ever for our longstanding military custom-
ers as well.
From our closely controlled RF/microwave diode
inventory we can match characteristics precisely to
maintain consistent component performance levels
over the full life of your system designs.
Our Lowell operation builds RF and microwave PIN
diode switches, limiters, comb generators, attenua-
tors, phase shifters, and detectors in frequency ranges
to 40 GHz. All can be hermetically sealed to meet the
most stringent military or space requirements and can
be combined to include several functions in a single
high reliability package. Typical of these integrated
packages are switch/limiters, limiter/detectors, switch
matrices and switched filters..
Integrated packages can provide higher performance
benefits at lower cost than by designing with individu-
al components. To assure the engineering expertise
that will attain your desired performance levels,
Microsemi only provides assemblies where we can
control the high-risk components. In that way, we’re
able to develop custom packaging that meets your
most demanding specifications.
In addition, we are continuing to develop low cost
surface mount PIN and Limiter solutions which offer
performance more often associated with expensive
chip and wire bonding assemblies. They are available
in several reflow friendly configurations which allow the
customer new opportunities for economical designs.
Microsemi also can offer a significant number of exist-
ing configurations to minimize your NRE and provides
many customers with microwave components no
longer available from their original suppliers. Our
extensive library of products and designs gives us the
ability to respond quickly with solutions to meet your
needs, quickly and cost effectively.
4
PIN Diodes
Max
Freq
(GHz)
Typical Cj
(@Vpt)
(pF) 40V 50V 70V/75V 100V 250V
40 0.01 MP61001
24 0.03 MP6250 GC4946 GC4801
18 0.06 GC4270 GC4210 GC4220
12 0.1 GC4271 GC4211 GC4221
80.2 MPP4203 GC4272 GC4212 GC4222
40.50 GC4273 GC4213 GC4223
20.75 GC4275 GC4215 GC4225
Max
Freq
(GHz)
Typical CT
(@Vpt)
(pF) 25V 40V/50V 70V/75V 100V 200V/250V
40 0.02 MP6250
24 0.03 MP61001
18 0.06 MP61004
12 0.1 MPP4203 GC4270 GC4210 GC4220
80.2 MPP4204 GMP4201 GMP4211 GC4221
40.50 GMP4202 GMP4212 GC4222
20.75 GC4273 GMP4215 GMP4235
11.2 GC4275 GC4215 GC4225 Ceramic / GigaMite / EPSM
Ceramic GaAs
Ceramic / GaAs
Ceramic / MMSM
TM
Ceramic / GigaMite
Ceramic / GigaMite / EPSM
Ceramic / GigaMite / EPSM
Chips / MMSM
TM
Chips
Chips
HIGH SPEED MICROWAVE SWITCHING: Packaged
Pkg Type
Flip Chip GaAs
HIGH SPEED MICROWAVE SWITCHING: Chips & Beam Lea ded
Outline
GaAs Chip
Beam Leads / GaAs Flip Chip
Chips
Chips
Max Freq
(GHz)
Typ i cal CT
(@Vpt)
(pF) 100V 300V 500V 600V 750V 1000V 1500V 2000V Pkg Type
12
80.2 GC4410 GC4430 GC4490 Ceramic
40.5 GC4411 GC4431 SM0502 UM6006 GC4491 Ceramic
2 1 GC4413 GC4433 SM0509 UM6606 GC4493 GC4600 Ceramic/MELF/Leaded/Stud
1 2 UM4301 UM4306 UM4310 GC4601 Ceramic/MELF/Leaded/Stud
0.5 4.0 HUM2010 HUM2015 HUM2020 Ceramic/MELF/Leaded/Stud
MED - HIGH POWER RF SWITCHING & ATTENUATION: Packaged
Max Freq
(GHz)
Typical Cj
(@Vpt)
(pF) 100V 300V 500V 750V 1500V Outline
18
12 0.1 GC4410 GC4430 GC4490 Chips
80.2 GC4411 GC4431 GC4491 Chips
40.5 GC4412 GC4432 GC4492 Chips
2 1 GC4413 GC4433 GC4493 Chips
1 2 GC4494 GC4600 Chips
0.5 4.0 GC4601 Chips
MED - HIGH POWER RF SWITCHING & ATTENUATION: CHIPS
PIN Diode Selection Guide
• Microsemi has a wide variety of GaAs and Silicon PIN diodes to suit your requirements
• From ultra-low Cj, Beam Lead PIN diodes for broadband switching to high power PIN diodes
• Designed for low frequency, low intermod switching and attenuation
5
PIN Diodes
0.1-0.5 0.5-1.0 1.0-2.0 2.0- 4.0 4.0-12 12-18 18-40 > 40
PIN Family HUM
Series
UM /
GC4600
Series
UM /
GC4600
GC4700
Series
GC4400
GC4200
GC4700
Series
GC4400
GC4200
GC4700
Series
GC4200
GC4700
GC4900
Series
GC4800 /
GaAs MP
Series
GaAs MP
Series
Incident Power
+60 dBm OK MARGINAL NO NO NO NO NO NO
+50 dBm OK OK MARGINAL MARGINAL NO NO NO NO
+40 dBm OK OK OK OK MARGINAL NO NO NO
+30 dBm OK OK OK OK OK MARGINAL MARGINAL NO
+20 dBm OK OK OK OK OK OK OK MARGINAL
+10 dBm OK OK OK OK OK OK OK OK
Package Type Lp Cp Rs Thermal
Performance
(θP)Cost Max
Frequency
(GHz) Hermetic
Ceramic Excellent Excellent Excellent Excellent High 18 Yes
MELF
Good Fair Excellent Very Good Moderate 2Yes
MMSM Very
Good
Very Good Good Good Low 8No
Giga Mite Good Very Good Good Very Good Low 6No
EPSM Good Good Good Good Moderate 6No
Stripline
Good Good Good Fair Moderate 8Yes or No
Glass Axial
Fair Good Good Poor Moderate 1.5 Yes
Plastic Poor Fair Fair Poor Low 2No
Only select PIN diodes available
0.1 pF
Only select PINs, varactors and Schottkys
Most products available
Most products available
Only select PINs, varactors, and Schottkys
Only select PINs, varactors, and Schottkys
< 0.05 pF
Packaging for Powe r Handling
Comments
Most products available
0.05 pF
Only select PINs and varactors
Frequency Band (GHz)
Typ. Junction
Capacitance 4 pF 2 pF 1 pF 0.5 pF 0.2 pF
PIN Diode Power Handling
Typical PIN Diode Power Handling (CW)
Packaging for Power Handling
0.1-0.5 0.5-1.0 1.0-2.0 2.0- 4.0 4.0-12 12-18 18-40 > 40
PIN Family HUM
Series
UM /
GC4600
Series
UM /
GC4600
GC4700
Series
GC4400
GC4200
GC4700
Series
GC4400
GC4200
GC4700
Series
GC4200
GC4700
GC4900
Series
GC4800 /
GaAs MP
Series
GaAs MP
Series
Incident Power
+60 dBm OK MARGINAL NO NO NO NO NO NO
+50 dBm OK OK MARGINAL MARGINAL NO NO NO NO
+40 dBm OK OK OK OK MARGINAL NO NO NO
+30 dBm OK OK OK OK OK MARGINAL MARGINAL NO
+20 dBm OK OK OK OK OK OK OK MARGINAL
+10 dBm OK OK OK OK OK OK OK OK
Package Type Lp Cp Rs Thermal
Performance
(θP)Cost Max
Frequency
(GHz) Hermetic
Ceramic Excellent Excellent Excellent Excellent High 18 Yes
MELF
Good Fair Excellent Very Good Moderate 2Yes
MMSM Very
Good
Very Good Good Good Low 8No
Giga Mite Good Very Good Good Very Good Low 6No
EPSM Good Good Good Good Moderate 6No
Stripline
Good Good Good Fair Moderate 8Yes or No
Glass Axial
Fair Good Good Poor Moderate 1.5 Yes
Plastic Poor Fair Fair Poor Low 2No
Only select PIN diodes available
0.1 pF
Only select PINs, varactors and Schottkys
Most products available
Most products available
Only select PINs, varactors, and Schottkys
Only select PINs, varactors, and Schottkys
< 0.05 pF
Packaging for Powe r Handling
Comments
Most products available
0.05 pF
Only select PINs and varactors
Frequency Band (GHz)
Typ. Junction
Capacitance 4 pF 2 pF 1 pF 0.5 pF 0.2 pF
6
PIN Diodes
GC4200 Series/Small Signal/High Speed Sw i tching
Chip Electrical Specifications: TA 25
˚
C
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
JUNCTION
CAPACITANCE
¹
CJ @-10V
(MAX) (pF)
SERIES
RESISTENCE²
(Rs @20mA, 1
GHz)
(MAX) (Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA,
IF=10 mA)
(Typ) (nS)
THERMAL
RESISTANCE
(MAX) (˚C/W)
GC4270 70 0.06 1.5 100 80
GC4271 70 0.1 1100 70
GC4272 70 0.2 0.8 100 70
GC4273 70 0.3 0.7 100 60
GC4274 70 0.4 0.6 100 50
GC4275 70 0.5 0.5 100 40
GC4210 100 0.06 1.5 200 80
GC4211 100 0.1 1200 70
GC4212 100 0.2 0.75 200 70
GC4213 100 0.3 0.6 200 60
GC4214 100 0.4 0.5 200 50
GC4215 100 0.5 0.35 200 40
GC4220 250 0.06 2.5 500 80
GC4221 250 0.1 2500 70
GC4222 250 0.2 1.5 500 70
GC4223 250 0.3 1500 60
GC4224 250 0.4 0.8 500 50
GC4225 250 0.5 0.6 500 40
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
JUNCTION
CAPACITANCE ¹
CJ @-50V
(MAX) (pF)
SERIES RESISTENCE²
(Rs @100mA, 100 MHz)
(MAX) (Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA, IF=10
mA)
(Typ) (uS)
THERMAL
RESISTANCE
(MAX) (˚C/W)
GC4410 100 0.1 0.6 0.4 40
GC4411 100 0.25 0.5 0.6 25
GC4412 100 0.5 0.4 0.8 20
GC4413 100 0.75 0.3 1.2 10
GC4430 300 0.1 1.5 0.6 40
GC4431 300 0.25 1.2 1.2 30
GC4432 300 0.5 11.5 20
GC4433 300 0.75 0.8 210
GC4490 750 0.1 1.5 130
GC4491 750 0.25 1.2 225
GC4492 750 0.5 1 3 20
GC4493 750 0.75 0.8 410
GC4494 750 1.3 0.35 5 7
GC4495 750 2.5 0.3 6 5
GC4200 Series/Small Signal/High Speed Switching
Chip Electrical Specifications: TA 25°C
GC4400 Series/Large Signal Switching/Attenuator
Chip Electrical Specifications: TA 25°C
Notes:
1. Capacitance is measured at 1 MHz and -10 volts.
2. Resistance is measured using transmission loss techniques.
3. These devices are not available in all case styles. Please consult the factory for
specific package styles offered
7
Notes: 1. Pulse length 1 microsecond. 2. As measure in style 30 package. 3. Supplied as -002 style, dual mesa.
GC4800 Series Planar Beam Lead PINs
Electrical Specifications: T
A
25˚C
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
CAPACITANCE¹
CT @-10V
(Typ /Max) (pF )
CAPACITANCE¹
CT @-50V
(Typ /Max) (pF )
SERIES
RESISTENCE
1
(Rs @20mA)
(Typ/Max)
(Ohms)
SERIES
RESISTENCE1
(Rs @50mA)
(Typ/Max)
(Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA,
IF=10 mA)
(Typ ) (u S)
SWITCHING
SPEED
TS
(Max) (nS )
GC4800A – 14 80 0.016 / 0.020 -- 4.5 / 6.5 150 30
GC4801 – 14 80 0.020 0.018 / 0. 020 3.5 / 4.0 150 30
GC4802 – 14 100
0.060 / 0.070 2.2 / 3.0 150 30
GC4810 - 16 150 0.025 / 0.035 3.0 / 4.0 300 50
Notes:
1 - RS and CT ar e determined using Loss and Isolation measurements at F = 2.2 G Hz.
GC4900Series MESA Beam Lead PINs
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
CAPACITANCE
CT @-10V
(Typ /Max) (pF )
SERIES
RESISTENCE
(Rs @10mA,
F=2.2GHz)
(Max) (Ohms)
SERIES
RESISTENCE
(Rs @50mA,
F=2.2GHz)
(Max) (Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA, IF=10
mA)
(Typ ) (u S)
Isol (dB)
@VR=10V
F=2.2 GHZ
IL (dB)
IF=10mA
F=2.2 GHZ
GC4902 - 12 100 0.025 380
GC4903 - 12 100 0.030 2.5 80
GC4941 - 12 50 0.060 1.5 50 22 0.14
GC4942 - 12 50 0.040 245 26 0.17
GC4943 - 12 50 0.030 340 27.5 0.27
GC4944 - 12 50 0.025 3.5 35 29 0.3
GC4945 - 12 50 0.022 5.5 40 30.5 0.45
GC4946 - 12 50 0.020 6.5 40 32 0.51
DC PERFORMANCE RF PERFORMANCE TYP 1
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
JUNCTION
CAPACITANCE
CJ @ 0V
(Typ) (pF)
JUNCTION
CAPACITANCE
CJ @ -6V
(Max) (pF)
JUNCTION
CAPACITANCE
CJ @ -50V
(Max) (pF)
SERIES
RESISTENCE²
(Rs @10mA, 1
GHz)
(MAX) (Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA,
IF=10 mA)
(Typ) (uS)
THERMAL
RESISTANCE
(Typ) (˚C/W)
GC4701 20 0.2 0.15 1.5 1.5 520
GC4702 20 0.5 0.3 1.2 1.2 10 12
GC4711 45 0.2 0.15 1.5 1.5 10 15
GC4712 45 0.5 0.3 1.2 1.2 15 10
GC4713 45 0.7 0.5 1 1 20 6
GC4721 120 0.2 0.15 1.5 1.5 50 1.2
GC4722 120 0.6 0.3 1 1 50 0.5
GC4723 120 0.8 0.5 0.5 0.5 100 0.3
GC4731 15 0.12 0.1 20 20 530
GC4732 15 0.2 0.15 1.5 1.5 520
GC4741 30 0.12 0.1 2 2 7 20
GC4742 30 0.2 0.15 1.5 1.5 715
GC4750
3250 0.25 3.0 @50mA 300 4
PIN Diodes
GC4700 Series/Large Signal Switching/Attenuator
Chip Electrical Specifications: TA 25°C
GC4800 Series/Planar Beam Lead PINs
Electrical Specifications: TA 25°C
GC4900 Series/Mesa Beam Lead PINs
Electrical Specifications: TA 25°C
GC4800 Series Planar Beam Lead PINs
Electrical Specifications: T
A
25˚C
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
CAPACITANCE¹
CT @-10V
(Typ /Max) (pF )
CAPACITANCE¹
CT @-50V
(Typ /Max) (pF )
SERIES
RESISTENCE1
(Rs @20mA)
(Typ/Max)
(Ohms)
SERIES
RESISTENCE1
(Rs @50mA)
(Typ/Max)
(Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA,
IF=10 mA)
(Typ ) (u S)
SWITCHING
SPEED
TS
(Max) (nS )
GC4800A – 14 80 0.016 / 0.020 -- 4.5 / 6.5 150 30
GC4801 – 14 80 0.020 0.018 / 0. 020 3.5 / 4.0 150 30
GC4802 – 14 100
0.060 / 0.070 2.2 / 3.0 150 30
GC4810 - 16 150 0.025 / 0.035 3.0 / 4.0 300 50
Notes:
1 - RS and CT ar e determined using Loss and Isolation measurements at F = 2.2 G Hz.
GC4900Series MESA Beam Lead PINs
MODEL
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
CAPACITANCE
CT @-10V
(Typ /Max) (pF )
SERIES
RESISTENCE
(Rs @10mA,
F=2.2GHz)
(Max) (Ohms)
SERIES
RESISTENCE
(Rs @50mA,
F=2.2GHz)
(Max) (Ohms)
CARRIER
LIFETIME
TL
(IR=6 mA, IF=10
mA)
(Typ ) (u S)
Isol (dB)
@VR=10V
F=2.2 GHZ
IL (dB)
IF=10mA
F=2.2 GHZ
GC4902 - 12 100 0.025 380
GC4903 - 12 100 0.030 2.5 80
GC4941 - 12 50 0.060 1.5 50 22 0.14
GC4942 - 12 50 0.040 245 26 0.17
GC4943 - 12 50 0.030 340 27.5 0.27
GC4944 - 12 50 0.025 3.5 35 29 0.3
GC4945 - 12 50 0.022 5.5 40 30.5 0.45
GC4946 - 12 50 0.020 6.5 40 32 0.51
DC PERFORMANCE RF PERFORMANCE TYP 1
Notes: 1. RS and CT are determined using Loss and Isolation measurements at F = 2.2 GHz.
Notes: 1. Insertion loss and Isolation are test at F = 2.2 GHz using transmission loss techniques.
8
RoHS and MRI Models
Base Model RoHS Compliant PN Non-Mag. / RoHS PN
SM0502 – M1 SMX0502 – M1 SMX0502MR – M1
SM0504 – M1 SMX0504 – M1 SMX0504MR – M1
SM0508 – M1 SMX0508 – M1 SMX0508MR – M1
SM0509 – M1 SMX0509 – M1 SMX0509MR – M1
SM0511 – M1 SMX0511 – M1 SMX0511MR – M1
SM1003 – M1 SMX1003 – M1 SMX1003MR – M1
SM0512 – M1 SMX0512 – M1 SMX0512MR – M1
SM1002 – M1 SMX1002 – M1 SMX1002MR – M1
PIN Diodes
SM Series Ceramic MELF PINs
Electrical Specifications: TA 25°C
RoHS and MRI Models
Notes: 1. Total Capacitance measured at F=1 MHz. 2. Series Resistance measured at F=100 MHz.
+ ‘Non Magnetic’ refers to any products that are designed with low and ultra low
magnetic materials for use in MRI systems
++ RoHS versions are supplied with a matte tin finish.
SM Series Ceramic MELF PINs
Electrical Specifications at TA = 25˚C
PART
NUMBER CASE STYLE
SUGGESTED
BREAKDOWN
VOLTAGE
VB@ 10uA
(MIN)(V)
TOTAL
CAPACITANCE1
CT @ -50V
(Max) (pF)
SERIES
RESISTENCE²
(Rs @100mA)
(MAX) (Ohms)
SERIES
RESISTENCE²
(Rs @200mA)
(MAX) (Ohms)
TL
(IR=6 mA
IF=10 mA)
(Typ) (uS)
THERMAL
RESISTANCE
(Typ) (˚C/W)
SM0502 M1 500 0.50 0.70 0.55 1.0 35
SM0504 M1 500 0.60 0.60 0.45 1.5 20
SM0508 M1 500 0.90 0.40 0.25 2.0 15
SM0509 M1 500 1.20 0.35 0.20 2.5 15
SM0511 M1 500 1.25 0.30 0.15 3.0 15
SM0512 M1 500 1.50 0.25 0.12 3.5 15
SM0812 M1 700 1.30 0.40 0.25 4.0 15
SM1001 M1 700 1.30 0.35 0.20 4.5 15
SM1002 M1 50 1.20 .75 @ 50mA 0.20 4.0 15
SM1003 M1 35 1.2 @ 20V .50 @ 10mA 0.10 0.6 25
MicrosemiR
DIM M1
INCHES
MIN MAX
A 0.080 0.095
B 0.115 0.135
C 0.008 0.030
SM SERIES CERAMIC MELF PINS
ELECTRICAL SPECIFICATIONS at 25°C
PART NO. CASE
STYLE
SUGGESTED
VOLTAGE
RATING
IR < 10µa
VR
TOTAL
CAPACITANCE
F = 1 MHz
VR=50V
pF (MAX)
SERIES
RESISTANCE
If=100mA
F=100MHz
OHM (MAX)
SERIES
RESISTANCE
If=200mA
F=100MHz
OHM (TYP)
CARRIER
LIFETIME
If=10mA µSEC
(TYP)
TYPICAL
THERMAL
RESISTANCE
°C/W
SM0502 M1 500 0.50 0.70 0.55 1.0 35
SM0504 M1 500 0.60 0.60 0.45 1.5 20
SM0508 M1 500 0.90 0.40 0.25 2.0 15
SM0509 M1 500 1.20 0.35 0.20 2.5 15
SM0511 M1 500 1.25 0.30 0.15 3.0 15
SM0512 M1 500 1.50 0.25 0.12 3.5 15
SM0812 M1 700 1.30 0.40 0.25 4.0 15
SM1001 M1 700 1.30 0.35 0.20 4.5 15
SM1002 M1 50 1.20 .75 @50mA 0.20 4.0 15
SM1003 M1 35 1.2 @ 20V .50 @ 10mA 0.10 0.6 25
9
Monolithic Microwave
Monolithic Microwave Surface Mount
(MMSM) PIN Diodes
This series of surface mount PIN diodes utilize new and unique monolithic MMSM
technology. The technology is a package/device integration accomplished at the
wafer fabrication level. Since the cathode and anode interconnections utilize precision
photolithographic techniques rather than wire bonds, parasitic package inductance is tightly
controlled. The package parasitics provide smooth non-resonant functionality through
12GHz.
Key Features
• Tape and Reeled for Automatic Assembly
• Low Series Inductance (<0.2nH typical)
• Low Parasitic Capacitance (0.06 pf typical)
• Meets All Commercial Qualification Requirements
• 0204 Outline
• Low thermal resistance
Applications Benefits
• 2.4 GHz PCS communications
• 5.7 GHz Wireless LANS
• Solid State Switches, Attenuators, Limiters
• Phase Shifters
• Widest bandwidth of any commercial surface mounted devices
• Ultra tight parametric distribution
Notes:
1. Total Capacitance measured at F=1 MHz.
2. Series Resistance measured at F=100 MHz.
Electrical Specifications: TA 25°C
PART
NUMBER OUTLINE
BREAKDOWN
VOLTAGE
VB@ 10uA
(Min)(V)
TOTAL
CAPACITANCE1
CT @ -10V
(Max) (pF)
SERIES
RESISTENCE²
(Rs @0.01mA)
(Typ) ( Ohm s)
SERIES
RESISTENCE²
(Rs @1m A)
(Ohms)
SERIES
RESISTENCE²
(Rs @10m A)
(M ax) (Ohm s)
TL
(IR=6 mA
IF=10 mA)
(Typ) ( nS)
APPLICATION
MPP4201 206 70 0.2 150 Attenuator
MPP4202 206 50 0.15 50 MRI
MPP4203 206 50 0.1 50 High Isolation Switch
MPP4204 206 25 0.15 220 High Speed Switch
MPP4205 206 70 0.15 250 7-16 5150 Attenuator
MPP4206 206 200 0.15 5 (Typ) 2.5 500 Attenuator/Switch
MPL4700 206 25 0.15 2
2.0
A20 Receiver Protection
MPL4701 206 15
2.5A
10 Receiver Protection
MPL4702 406 50B12 230 Anti-parallel Pair
MRI Surface Coil Detune
10
MRI - APPLICATIONS MATRIX FOR RF PIN DIODES
VOLUME / BIRD CAGE COILS – Switching Diodes
(End ring resonant / anti-resonant Switching Diodes)
Model # VBR CT(pF) Wi (um) τ(µs)
Rs(Ω)
1@IF(mA) Application
HUM2015 1500 3.5 275 20 0.1 500 Switching
HUM2020 2000 3.5 275 20 0.1 500 Switching
Model # VBR CT(pF) Wi (um) τ(µs) Rs(Ω)1@IF(mA) Application
UMX5601 100 2.5 175 50.75 50 ULTRA-Low Magnetic
Receive Array
UM7201 100 2.2 50 1.5 0.25 100 Receive Array
UM9701 100 1.8 50 1.5 0.8 10 Receive Array
UM9995 100 1.2 100 20.6 100 ULTRA-Low Magnetic
Recieve Array
UMX5101 100 1.2 125 2.5 0.8 50 ULTRA-Low Magnetic
Recieve Array
UM9989AP375 1.2 2- - 0.004 2100 Low Magnetic
Recieve Array
MPL4702 3 50 1.2 2- - 0.03 210
Low Magnetic
Recieve Array
SURFACE COILS – RECEIVE ARRAY PIN Diodes
(LOOP ARRAY OR STRIP ARRAY – 4 CHANNELS AND NX4 CHANNELS)
MRI Applications Matrix
Model # VBR CT(pF) Wi (um) τ(µs)
Rs(Ω)
1@IF(mA) Application
UM4001 100 3175 50.25 500 T/R Control
UM4301 100 2.2 325 61.5 100 T/R Control
UM7301 100 0.7 325 4 3 100 T/R Control
SMX0512MR 500 1.5 50 3.5 0.35 100 T/R Control
UM7101 100 1.2 100 20.6 100 T/R Control
UM6201 100 1.1 50 0.6 0.4 100 T/R Control
UM9415 50 3175 50.75 50
T/R Control
TRANSMIT / RECEIVE Control Boards
Model # VBR CT(pF) Wi (um) τ(µs)
Rs(Ω)
1@IF(mA) Application
UM9989 75 1.2 - - 0.006 2100 Receiver Protection
UM1089 75 1.5 - - 0.015 0.8 100 Receiver Protection
UM7201 100 2.2 50 1.5 0.25 100 Receiver Protection
SMX0509MR 500 1.2 50 2.5 0.2 200 Receiver Protection
MPP4204 25 0.15 - - 0.02 210 Receiver Protection
MPL4702 350 1.22 - - 0.03 210 Receiver Protection
UM9415 50 3175 50.75 50
Receiver Protection
Notes:
1) Series Resistance (R
S
) is measured at 100MHz.
2) Nominal Ct per Diode.
3) Antiparallel Pairs
RECEIVER Protection Circuits
Applications Benefits
• 2.4 GHz PCS communications
• 5.7 GHz Wireless LANS
• Solid State Switches, Attenuators, Limiters
• Phase Shifters
• Widest bandwidth of any commercial surface mounted devices
• Ultra tight parametric distribution
Receiver Protection Circuits
Transmit/Receiver Control Boards
Surface Coil—Receive Array PIN Diodes
(Loop Array or Strip Array 4 Channels and NX4 Channels)
MRI - APPLICATIONS MATRIX FOR RF PIN DIODES
VOLUME / BIRD CAGE COILS – Switching Diodes
(End ring resonant / anti-resonant Switching Diodes)
Model # VBR CT(pF) Wi (um) τ(µs)
Rs(Ω)
1@IF(mA) Application
HUM2015 1500 3.5 275 20 0.1 500 Switching
HUM2020 2000 3.5 275 20 0.1 500 Switching
Model # VBR CT(pF) Wi (um)
τ(µs)
Rs(Ω)1@IF(mA) Application
UMX5601 100 2.5 175 50.75 50 ULTRA-Low Magnetic
Receive Array
UM7201 100 2.2 50 1.5 0.25 100 Receive Array
UM9701 100 1.8 50 1.5 0.8 10 Receive Array
UM9995 100 1.2 100 20.6 100 ULTRA-Low Magnetic
Recieve Array
UMX5101 100 1.2 125 2.5 0.8 50 ULTRA-Low Magnetic
Recieve Array
UM9989AP375 1.2 2- - 0.004 2100 Low Magnetic
Recieve Array
MPL4702 3 50 1.2 2- - 0.03 210 Low Magnetic
Recieve Array
SURFACE COILS – RECEIVE ARRAY PIN Diodes
(LOOP ARRAY OR STRIP ARRAY – 4 CHANNELS AND NX4 CHANNELS)
Volume/Bird Cage Coils—Switching Diodes
(End ring resonant/anti-resonant Switching Diodes)
Notes:
1. Series Resistance (RS) is measured at 100MHz.
2. Nominal Ct per Diode.
3. Anti-parallel Pairs
11
POWER PIN DIODES For Switching and Attenuation
Featuring fast swithing products through High Power / Low IM products for TR switching contol
Category CT@100V
(Typ)
(pF)
CT@50V
(Typ)
(pF)
RP
@100V
(Min)
(kOhms)
RP @30V
(Min)
(kOhms)
TL
(Min/Typ)
(uS)
Rs@100
mA
(Max)
(Ohms)
RoHS
Available Low Mag Vb
(Min)
(V) PN
200 HUM2002
HIGH POWER PIN DIODE 3.4 200 100 10 / 30 Yes 500 HUM2005
Up to 2000V 1000 HUM2010
2000 HUM2020
ULTRA LOW MAGNETING 100 UMX5601
MED Power Switching 500 UMX5605
Up to 1500V 2.6 100 5 / 15 0.5 Yes Yes 1000 UMX5610
1500 UMX5515
SWITCHING / ATTENUATION 100 UM4301
MED Power 200 UM4302
Up to 1000V 2.2 200 6 1.5 Yes 600 UM4306
1000 UM4310
SWITCHING / ATTENUATION 100 UM7301
MED Power 200 UM7302
Up to 1000V 0.7 150 4 3 Yes 600 UM7306
1000 UM7310
Category CT@0V
(Typ)
(pF)
CT@50V
(Typ)
(pF)
G @0V
(Max)
(uS)
TL
(Typ)
(nS)
Rs@100
mA
(Typ)
(Ohms)
RoHS
Available Low Mag Vb
(Min)
(V) PN
FAST TURN ON 1.2 40 6 2 Yes Yes 75 UM9989
RECIEVER PROTECTION
ANTI PARALLEL CONFIGURATION 2.4 UM9989AP
FAST TURN ON 1.5 40 15 0.8 Yes Yes 75 UM9989
RECIEVER PROTECTION
Category CT@50V
(Typ)
(pF)
CT@100
V
(Max)
(pF)
Rp @0V
(Min)
(kOhms)
Rp
@100V
(Min)
(kOhms)
TL
(Typ)
(uS)
Rs@100
mA
(Typ)
(Ohms)
RoHS
Available Low Mag Vb
(Min)
(V) PN
SURFACE MOUNT 0.75 5 4 0.5 Yes Yes 75 UM9989
SWITCHING DIODE 100 UM6601
POWER PIN DIODES 0.4 300 2 2.2 Yes 200 UM6602
600 UM6606
1000 UM6610
Power PIN Diodes for Switching and Attenuation
Featuring fast switching products through High Power / Low IM products for TR switching contol
Power PIN Diodes
12
Schottky Diodes
Freq.
Range PART
NUMBER Barrier
BREAKDOWN
VOLTAGE
VB@ 10uA
(Min)(V)
TOTAL
CAPACITANCE
CT @ 0V
(Max) (pF)
FORWARD
VOLTAGE
VF @ 1mA
(Max) (mV)
Rd
@ IF =
5mA
(Max)
(Ohms)
NF ssbs
Typ (dB)
Zif
(Typ )
(Ohms)
Ku-Ka GC9901 0.10 310 18 6.5
XGC9902 0.15 280 14 6
CGC9903 0.3 270 12 5.5
SGC9904 0.5 250 10 5.5
Ku-Ka GC9911 0.10 360 18 6.5
XGC9912 0.15 350 14 6
CGC9913 0.3 340 12 5.5
SGC9914 0.5 330 10 5.5
Ku-Ka GC9921 0.10 440 18 6.5
XGC9922 0.15 430 14 6
CGC9923 0.3 410 12 5.5
SGC9924 0.5 390 10 5.5
Ku-Ka GC9931 0.10 540 18 6.75
XGC9932 0.15 530 14 6.25
CGC9933 0.3 520 12 5.75
SGC9934 0.5 500 10 5.5
Ku-Ka GC9941 0.10 650 20 7
XGC9942 0.15 630 16 6.25
CGC9943 0.3 620 12 5.75
SGC9944 0.5 600 10 5.75
ULTRA-LOW 2140
LOW 2170
HIGH 4300
LOW-MED 2 200
MEDIUM 3250
Electrical Specifications at TA = 25˚C
PART NUMBER
JUNCTION
CAPACITANCE
CJ @ 0V
(Typ) (pF)
Rs 2
(Max)
(Ohms)
Typical
LO Freq
(GHz)
NF ssbs 4
(Typ) (dB)
Zif
(Typ)
(Ohms)
VB@
10uA
(Min)(V)
MS8001 0.12 69.375 5.6 250–500 5
MS8002 0.1 6 16 5.6 250–500 5
MS8003 0.07 624 6.5 250–500 5
MS8004 0.06 636 6.5 250–500 5
Flip Chip GaAs Schottky Diodes
Electrical Specifications at TA = 25˚C
PART NUMBER CAPACITANCE
CJ @ 0V
(Max) (pF)
Rs
@10mA
(Max)
(Ohms)
VF
@10mA
(mV)
Delta VF
(mV)
VB@
10uA
(Min)(V)
MS8150-P2613 0.08 7650 - 750 na 3
MS8151-P2613 0.06 9600 - 800 na 3
MS8250 - P2920 0.08 7650 - 750 10 3
MS8251 - P2920 0.06 9600 - 800 10 3
Description
Low Rs Flip Chip - Single
Low Ct Flip Chip - Single
Low Rs Flip Chip - Antiparallel
Low Ct Flip Chip - Antiparallel
Schottky Mixer Diodes
GaAs Schottky Barrier Diodes
Electrical Specifications at TA = 25˚C
PART NUMBER
JUNCTION
CAPACITANCE
CJ @ 0V
(Typ) (pF)
Rs 2
(Max)
(Ohms)
Typical
LO Freq
(GHz)
NF ssbs 4
(Typ) (dB)
Zif
(Typ)
(Ohms)
VB@
10uA
(Min)(V)
MS8001 0.12 69.375 5.6 250–500 5
MS8002 0.1 6 16 5.6 250–500 5
MS8003 0.07 624 6.5 250–500 5
MS8004 0.06 636 6.5 250–500 5
Flip Chip GaAs Schottky Diodes
Electrical Specifications at TA = 25˚C
PART NUMBER CAPACITANCE
CJ @ 0V
(Max) (pF)
Rs
@10mA
(Max)
(Ohms)
VF
@10mA
(mV)
Delta VF
(mV)
VB@
10uA
(Min)(V)
MS8150-P2613 0.08 7650 - 750 na 3
MS8151-P2613 0.06 9600 - 800 na 3
MS8250 - P2920 0.08 7650 - 750 10 3
MS8251 - P2920 0.06 9600 - 800 10 3
Description
Low Rs Flip Chip - Single
Low Ct Flip Chip - Single
Low Rs Flip Chip - Antiparallel
Low Ct Flip Chip - Antiparallel
Electrical Specifications: TA 25°C
Electrical Specifications: TA 25°C
• Monolithic design for lowest
parasitics
• Low Conversion Loss
• Suitable for applications to
26.5 GHz
• Excellent Noise Figure
• Can be supplied as monolithic or
as packaged device
• Singe, T & Quad configurations
available
• RoHS Compliant
Flip Chip GaAs Schottky Barrier Diodes
13
Microwave Hyperabrupt 22V Varactors
for Wide Bandwidth VCOs
PART
NUMBER
TOTAL
CAPACITANCE
CT @0V
(Typ) (pF)
TOTAL
CAPACITANCE
CT @ -4.0V
(Min - Max)
(pF)
TOTAL
CAPACITANCE
CT @ -20V
(Max) (pF)
Q
(4V/50M
Hz) min
KV2163 26 pF 8.75 - 10.80 2.5 400
KV2153 13.5 pF 4.45 - 5.50 1.3 600
KV2143 7 pF 2.65 - 3.30 0.9 700
KV2133 5 pF 1.75 - 2.20 0.7 850
KV2123 3 pF 1.30 - 1.65 0.55 1000
KV2113 2 pF 0.85 - 1.10 0.45 1200
Microwave Abrupt 30V Varactors f or
Moderate Bandwidth, Low Noise VCOs
PART
NUMBER CT0/CT4 (min)
TOTAL
CAPACITANCE
CT @ -4.0V
(+ / - 10%) (pF)
CT4/CT30 (min) Q
(4V/50M
Hz) min
GC1300 1.5 0.8 1.45 3900
GC1301 1.6 1.0 1.55 3800
GC1302 1.7 1.2 1.6 3700
GC1303 1.8 1.5 1.65 3600
GC1304 1.9 1.8 1.7 3500
GC1305 22.2 1.75 3400
GC1306 22.7 1.8 3300
GC1307 2.1 3.3 1.85 3100
GC1308 2.1 3.9 1.85 2700
GC1309 2.1 4.7 1.85 2600
GC1310 2.1 5.6 1.85 2500
EPSM PIN Diodes
for Sw itching & Attenuation
PART
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(Min)(V)
TOTAL
CAPACITANCE
CT @ VR
(Max) (pF)
Rs
@ IF
(Max) (Ohms)
TL
(IR=6 mA
IF=10 mA)
(Typ) (nS)
Application
LSP1000 35 0.28 @ 5V 2.5 @ 5mA 80 nS Switch
LSP1002 100 0.32 @ 50V 4.0 @ 100mA 1500 nS Attenuator
LSP1004 35 0.75 @ 20V 0.6 @ 10mA 150 nS Switch
LSP1011 200 0.35 @ 50V 2.0 @ 100mA 2000 nS Attenuator
LSP1012 20 0.35 @ 10V 1.8 Ohms @ 10mA 5 nS Limiter
EPSM Super Hyperabrupt 12V
Varactors for Low Voltage VCOs
PART
NUMBER
TOTAL
CAPACITANCE
CT @ -1.0V
(Min) (pF)
TOTAL
CAPACITANCE
CT @ -2.5V
(Min - Max)
(pF)
TOTAL
CAPACITANCE
CT @ -4V
(Max) (pF)
TOTAL
CAPACITANCE
CT @ -8V
(Max) (pF)
Q (4V/50MHz)
min
KV1913A 36 pF 18 - 27 12 6.20 400
KV1953A 26 pF 13 - 20 94.7 500
KV1923A 17 pF 8.5 - 13 63.2 600
KV1933A 13 pF 6.5 - 10 4.5 2.7 750
KV1943A 9 pF 4.5 - 6.5 31.7 900
KV1963A 4 pF 2.0 - 3.0 1.5 11200
KV1973A 1.8 pF 1.1 - 1.5 0.8 0.55 1400
KV1983A 1.2 pF 0.8 - 1.1 0.6 0.45 1600
KV1993A 0.6 pF 0.5 - 0.8 0.4 0.35 1800
Microwave Hyperabrupt 22V Varactors
for Wide Bandwidth VCOs
PART
NUMBER
TOTAL
CAPACITANCE
CT @0V
(Typ) (pF)
TOTAL
CAPACITANCE
CT @ -4.0V
(Min - Max)
(pF)
TOTAL
CAPACITANCE
CT @ -20V
(Max) (pF)
Q
(4V/50M
Hz) min
KV2163 26 pF 8.75 - 10.80 2.5 400
KV2153 13.5 pF 4.45 - 5.50 1.3 600
KV2143 7 pF 2.65 - 3.30 0.9 700
KV2133 5 pF 1.75 - 2.20 0.7 850
KV2123 3 pF 1.30 - 1.65 0.55 1000
KV2113 2 pF 0.85 - 1.10 0.45 1200
Microwave Abrupt 30V Varactors f or
Moderate Bandwidth, Low Noise VCOs
PART
NUMBER CT0/CT4 (min)
TOTAL
CAPACITANCE
CT @ -4.0V
(+ / - 10%) (pF)
CT4/CT30 (min) Q
(4V/50M
Hz) min
GC1300 1.5 0.8 1.45 3900
GC1301 1.6 1.0 1.55 3800
GC1302 1.7 1.2 1.6 3700
GC1303 1.8 1.5 1.65 3600
GC1304 1.9 1.8 1.7 3500
GC1305 22.2 1.75 3400
GC1306 22.7 1.8 3300
GC1307 2.1 3.3 1.85 3100
GC1308 2.1 3.9 1.85 2700
GC1309 2.1 4.7 1.85 2600
GC1310 2.1 5.6 1.85 2500
EPSM PIN Diodes
for Sw itching & Attenuation
PART
NUMBER
BREAKDOWN
VOLTAGE
VB@ 10uA
(Min)(V)
TOTAL
CAPACITANCE
CT @ VR
(Max) (pF)
Rs
@ IF
(Max) (Ohms)
TL
(IR=6 mA
IF=10 mA)
(Typ) (nS)
Application
LSP1000 35 0.28 @ 5V 2.5 @ 5mA 80 nS Switch
LSP1002 100 0.32 @ 50V 4.0 @ 100mA 1500 nS Attenuator
LSP1004 35 0.75 @ 20V 0.6 @ 10mA 150 nS Switch
LSP1011 200 0.35 @ 50V 2.0 @ 100mA 2000 nS Attenuator
LSP1012 20 0.35 @ 10V 1.8 Ohms @ 10mA 5 nS Limiter
EPSM Super Hyperabrupt 12V
Varactors for Low Voltage VCOs
PART
NUMBER
TOTAL
CAPACITANCE
CT @ -1.0V
(Min) (pF)
TOTAL
CAPACITANCE
CT @ -2.5V
(Min - Max)
(pF)
TOTAL
CAPACITANCE
CT @ -4V
(Max) (pF)
TOTAL
CAPACITANCE
CT @ -8V
(Max) (pF)
Q (4V/50MHz)
min
KV1913A 36 pF 18 - 27 12 6.20 400
KV1953A 26 pF 13 - 20 94.7 500
KV1923A 17 pF 8.5 - 13 63.2 600
KV1933A 13 pF 6.5 - 10 4.5 2.7 750
KV1943A 9 pF 4.5 - 6.5 31.7 900
KV1963A 4 pF 2.0 - 3.0 1.5 11200
KV1973A 1.8 pF 1.1 - 1.5 0.8 0.55 1400
KV1983A 1.2 pF 0.8 - 1.1 0.6 0.45 1600
KV1993A 0.6 pF 0.5 - 0.8 0.4 0.35 1800
EPSM PIN Diodes
For Switching and Attenuation
EPSM Super Hyperabrupt 12V
Varactors for Low Voltage VCOs
Microwave Hyperabrupt 22V Varactors
for Wide Bandwidth VCOs
Microwave Abrupt 30V Varactors
for Moderate Bandwidth, Low Noise VCOs
Enhanced Performance Surface Mount
14
Category Model Number or
Family Max Voltage Typical Ratio Mod Sens
Linearity
Relative Q or
VCO Phase
Noise
MV20000 15V 3:1
MV21000 30V 4:1
GC1200; GC1300;
GC1500; 1N5400
30V 4:1
GC1600; 1N5400 45V 5:1
GC1700; 1N5100 60V 6:1
MV34000; 15V 6:1
MV30000; MV31000
MV32000
KV2100; MPV2100
GMV2100
KV2101
KV2201
KV2301
KV2401
KV2501
KV2601
KV2701
KV2801
KV3201; KV31S1
KV3901; KV38S2
GC15000 22V 6:1 Excellent Excellent
GC15000 22V 11:1 Excellent Excellent
KV1905A
KV1925A
KV1935A
KV1945A
KV1965A; MPV1965
KV1975A 12V 4:1 Good (Mid-Range) Very Good
KV1911A-KV1991A
KV1912A-KV1932A
KV1913A-KV1993A (Mid-Range)
KV1400
KV1500
KV1600
KV1700
KV1800
Good13:112V
12V
12V
Good
(Mid-Range)
Very Good
Very Good
Good
(Mid-Range)
Good (Mid Range)
Good
(Mid-Range)
Best
Abrupt Silicon
Hyperabrupt
GaAs
Hyperabrupt
Silicon
22V
30V 11:1
11:1
Good - Excellent
Very Good30V
11:1
3:1
6:1 Good
Abrupt GaAs
Poor; Exponential
Low "S" Linear
FLTVARS
High "S" Linear
FLTVARS
Silicon
Super
Hyperabrupts
Varactor Category Performance Guide
Tuning Varactors
15
Material Silicon Silicon Silicon Silicon Silicon Silicon Silicon GaAs GaAs GaAs GaAs GaAs GaAs GaAs
Freq. Band
Super
Hyper
Vb=12V
P/N
Series
High "S"
Linear
Vb=22V
P/N
Low "S"
Linear
Vb=22V
P/N
Hyper
Vb= 22V P /N
Series
Abrupt
Vb=30V
Chip
Ceramic
Glass*
Abrupt
Vb=30V
EPSM
Abrupt
Vb=30V
SOT-23
Hyper
Chips**
VB=22V
Low
Gamma
Hyper
Chips**
VB=22V
Medium
Gamma
Hyper
Chips**
VB=22V
High
Gamma
Hyper
Chips**
VB=15V
Very High
Gamma
Hyper Flip
Chip
Vb=18V
Medium
Gamma
Abrupt
Chips**
Vb=15V
Abrupt
Chips**
Vb=30V
MV32001 MV30011 MV31011 MV34001 MV20001 MV21001
MV32002 MV30012 MV31012 MV34002 MV20002 MV21002
MV32003 MV30013 MV31013 MV34003 MV20003 MV21003
MV32004 MV30014 MV31014 MV34004 MV20004 MV21004
Micr owave
MV32005 MV30015 MV31015 MV34005 MV20005 MV21005
to 40 GHz MV32006 MV30016 MV31016 MV34006 MV20006 MV20116
MV32007 MV30017 MV31017 MV34007 MV20007 MV21007
MV32008 MV30018 MV31018 MV34008 MV20008 MV21008
MV32009 MV30019 MV31019 MV34009 MV20009 MV21009
MV32010 MV30020 MV31020 MV34010 MV20010 MV21010
GC1500A GC1300 MV31021 MV39001
MPV2100 GC1500B GC1301 MV39002
KV199x KV211x GC1500 GC1302 MV31022 MV39003
KV198x GC15006 GC15001 KV212x GC1501 GC1303
Microwave KV197x GC15007 GC15002 KV213x GC1502 GC1304 MV31023
to 18 GHz KV196x GC15008 GC15003 KV214x GC1503 GC1305 GC1202
KV194x GC15009 GC15004 KV215x GC1504 GC1306 GC1203 MV31024
KV193x GC15010 GC15005 KV216x GC1505 GC1307 GC1204
GMV5007 GMV2114 GC1506 GC1308 GC1205 MV31025
GMV2134 GC1507 GC1309 GC1206
GMV2154 GMV1542 GC1310 GC1207 MV31026
GC1208
GC1508 GC1209
KV2101 GC1509 GC1210
UHF KV192x GC15011 GC15014 KV3201 GC1510 N/A GC1211
to 1.0 G Hz KV195x GC15012 GC15015 KV3901 GC1511 GC1212
KV191x GC15013 GC15016 KV2801 GC1512 GC1213
GC1513 GC1214
KV2001 1N5441 GC1215
VHF KV1401 N/A N/A KV2201 1N5476 N/A GC1216
to 250 MHz KV1501 KV2301 thru GC1217
KV2401
HF KV1601 KV2501
1 - 50 MHz KV1701 N/A N/A KV2601 N/A N/A N/A
KV1801 KV2701
Varactor Diode Selector Guide
Tuning Varactors
16
MMSM Varactor Diodes
Monolithic Microwave
Surface Mount (MMSM)
Varactor Diodes
This series of surface mount PIN diodes utilize new and unique monolithic
MMSM technology. The technology is a package/device integration
accomplished at the wafer fabrication level. Since the cathode and anode
interconnections utilize precision photolithographic techniques rather than
wire bonds, parasitic package inductance is tightly controlled. The package
parasitics provide smooth non-resonant functionality through 12GHz.
Key Features:
• Tape and Reeled for Automatic Assembly
• Low Series Inductance (<0.2nH typical)
• Low Parasitic Capacitance (0.06 pf typical)
• Meets All Commercial Qualification Requirements
• 0204 Outline
Applications/Benefits
• 2.4 GHz PCS
• 5.7 GHz Wireless LANS
• VCO’s (Voltage Controlled Oscillator)
• Tunable Filter
• Widest bandwidth of any commercial
surface mounted devices
• Ultra tight parametric distribution
Electrical Specifications at TA = 25˚C
PART
NUMBER Vb@10uA
(Min) (V)
TOTAL
CAPACITANCE
CT @ -1.0V
(Min - Max)
(pF)
RATIO
CT 1V/CT 3V RATIO
CT 1V/CT 6V
Q
(4V/50MHz)
(Min)
Outline
Dwg
Number Application
MPV1965 15 2.6-3.8 1.4-2.2 2.6-3.6 1500 206 Low Voltage VCO
PART
NUMBER Vb@10uA
(Min) (V)
TOTAL
CAPACITANCE
CT @ 0V
(Typ) (pF)
TOTAL
CAPACITANCE
CT @ -4.0V
(Min - Max)
(pF)
TOTAL
CAPACITANCE
CT @ -20V
(Min - Max) (pF)
Q
(4V/50MHz)
(Min)
Outline
Dwg
Number Application
MPV2100 22 3.25 0.9-1.5 0.2-0.5 1500 206 W ide Bandwidth VCO
Electrical Specifications: TA 25°C
17
Microsemi’s GaAs varactors are available as Abrupt Junction and Hyperabrupt
Junction. Our computer controlled epitaxy provide the optimal C-V
characteristics for your application. GaAs varactors feature extremely high Q
and lowest phase noise for critical applications/
Electrical Specification s at T
A
= 25˚C
PART NUMBER
TOTAL
CAPACITANCE
CT @ -4.0V
(+ /- 10%) (pF)
RATIO
CT 2V/CT
12V
Vb@10
uA
(Min)
(V)
Q (4V/50MHz)
(Min) PART
NUMBER
TOTAL
CAPACITANCE
CT @ -4.0V
(+ /- 10%) (pF)
RATIO
CT
2V/CT
12V
Vb@10
uA
(Min)
(V)
Q (4V/50MHz)
(Min)
MV30001 0.6 2.5 15 4000 MV30011 0.6 3.1 22 4000
MV30002 13.1 15 3000 MV30012 14.1 22 3000
MV30003 1.2 3.2 15 3000 MV30013 1.2 4.3 22 3000
MV30004 1.5 3.4 15 3000 MV30014 1.5 4.8 22 3000
MV30005 1.8 3.5 15 3000 MV30015 1.8 522 3000
MV30006 2.2 3.6 15 3000 MV30016 2.2 5.3 22 3000
MV30007 2.5 3.7 15 2500 MV30017 2.5 5.5 22 2500
MV30008 33.8 15 2500 MV30018 35.7 22 2500
MV30009 3.6 3.8 15 2000 MV30019 3.6 5.9 22 2000
MV30010 4.5 3.9 15 1500 MV30020 4.5 6.1 22 1500
15 Volt Hyperabrupt Varactors - Gamma = 1.00
22 Volt Hyperabrupt Varactors - Gamma = 1.00
Electrical Specifications: TA 25°C
PART NUMBER
TOTAL
CAPACITANCE
CT @ -4.0V
(+ /- 10%) (pF)
RATIO
CT 0V/CT
VBR
Vb@10
uA
(Min)
(V)
Q (4V/50MHz)
(Min) PART
NUMBER
TOTAL
CAPACITANCE
CT @ -4.0V
(+ /- 10%) (pF)
RATIO
CT
0V/CT
VBR
Vb@10
uA
(Min)
(V)
Q (4V/50MHz)
(Min)
MV20001 0.3 2.4 15 8000 MV21001 0.3 2.8 30 8000
MV20002 0.4 2.6 15 7500 MV21002 0.4 3.1 30 7500
MV20003 0.5 2.8 15 7000 MV21003 0.5 3.4 30 7000
MV20004 0.6 2.9 15 6500 MV21004 0.6 3.6 30 6500
MV20005 0.8 315 6000 MV21005 0.8 3.8 30 6000
MV20006 13.1 15 5700 MV21006 1 4 30 5700
MV20007 1.2 3.2 15 5000 MV21007 1.2 4.2 30 5000
MV20008 1.5 3.3 15 5000 MV21008 1.5 4.3 30 5000
MV20009 1.8 3.4 15 5000 MV21009 1.8 4.5 30 5000
MV20010 2.2 3.4 15 4000 MV21010 2.2 4.6 30 4000
15 Volt Abrupt Junction V aractors, Gamma = 0.6 30 Volt Abrupt Junc tion Varact ors, Gamma = 0.6
Electrical Specifications: TA 25°C
PART NUMBER
TOTAL
CAPACITANCE
CT @ -4.0V
(+ /- 10%) (pF)
RATIO
CT 2V/CT
12V
Vb@10
uA
(Min)
(V)
Q (4V/50MHz)
(Min) PART
NUMBER
TOTAL
CAPACITANCE
CT @ -4.0V
(+ /- 10%) (pF)
RATIO
CT
2V/CT
12V
Vb@10
uA
(Min)
(V)
Q (4V/50MHz)
(Min)
MV31001 0.6 315 4000 MV31011 0.5 3.2 22 4000
MV31002 13.7 15 3000 MV31012 0.7 422 4000
MV31003 1.2 3.9 15 3000 MV31013 1 5 22 3000
MV31004 1.5 4.2 15 3000 MV31014 1.2 5.4 22 3000
MV31005 1.8 4.4 15 3000 MV31015 1.5 622 3000
MV31006 2.2 4.6 15 3000 MV31016 1.8 6.4 22 3000
MV31007 2.5 4.7 15 2000 MV31017 26.6 22 3000
MV31008 34.8 15 2000 MV31018 2.2 6.8 22 3000
MV31009 3.6 4.9 15 2000 MV31019 2.7 7.2 22 2000
MV31010 4.5 515 1500 MV31020 3.3 7.6 22 2000
15 Volt Hyperabrupt Varactors - Gamma = 1.25
22 Volt Hyperabrupt Varactors - Gamma = 1.25
Electrical Specifications: TA 25°C
Additional Gamma and Capacitance values are available. Consult the factory or www.microsemi.com.
GaAs Varactor Diodes
18
Minimum
X K
Minimum X K
MG1054-30
MG1044-130
V
OP
= 5V @
V
OP
= 8V @
IOP = 200mA
IOP = 120mA
MG1052-30 MG1058-30
MG1041-30 MG1045-30
V
OP
= 8V @ V
OP
= 5V @
VOP = 9V @ VOP = 8V @
I
OP
= 140mA I
OP
= 300mA
IOP = 110mA IOP = 150mA
MG1056-30
MG1042-30 MG1046-30
VOP = 8V @
V
OP
= 9V @ V
OP
= 8V @
I
OP
= 200mA
I
OP
= 140mA I
OP
= 200mA
Polarity: cathode is the cap and anode is the heat-sink
MG1043-30
VOP = 10V @
IOP = 180mA
Operation over a narrow band around a specific center frequency.
Polarity: cathode is the cap and anode is the heat-sink
Other frequencies available upon request. Call factory. Pu lse widt h = 1 usec, Duty factor = 1% typ.
Operating v oltage (V
OP
) typ. Operat i n g cur re n t (I
OP
) max.
Alternative pulse width and duty factors can be specified by customer
20
20
30
Discrete Frequency: Anode Ground (CW EPI-Up)
Discrete Frequency: Anode Ground (Pulsed EPI-Up)
5
5
10
10
Minimum
Power
(mW)
C
(5.4-6.9)
GHz
X
(8.0-12.4)
GHz
Ku
(12.4-18.0)
GHz
K
(18.0-26.5)
GHz
Ka
(18-26.5)
GHz
U
(40.0-60.0)
GHz
V
(60.5-85)
GHz
W
(85.0-95.0)
GHz
MG1036-M16 MG1024-M16
V
OP
= 4.5V @ V
OP
= 4.5V @
I
OP
= 900mA I
OP
= 1100mA
MG1025-16
V
OP
= 4.5V @
I
OP
= 1000mA
MG1001-M11 MG1005-M11 MG1009-M11 MG1013-M16/83B MG1017-M16 MG1021-M16 MG1037-M16 MG1038-M16
V
OP
= 12V @ V
OP
= 10V @ V
OP
= 8V @ V
OP
= 6V @ V
OP
= 4.5V @ V
OP
= 4V @ V
OP
= 5V @ V
OP
= 5V @
I
OP
= 400mA I
OP
= 400mA I
OP
= 500mA I
OP
= 600mA I
OP
= 700mA I
OP
= 800mA I
OP
= 1100mA I
OP
= 1200mA
MG1002-M11 MG1006-M11 MG1010-M11 MG1014-M16/83B MG1018-M16 MG1022-M16
V
OP
= 12V @ V
OP
= 10V @ V
OP
= 8V @ V
OP
= 6V @ V
OP
= 4.5V @ V
OP
= 4V @
I
OP
= 600mA I
OP
= 700mA I
OP
= 800mA I
OP
= 1000mA I
OP
= 1100mA I
OP
= 1200mA
MG1023-M16
V
OP
= 4V @
I
OP
= 1600mA
(40-50 GHz)
MG1015-M16/83B MG1019-M16
V
OP
= 6V @ V
OP
= 5V @
I
OP
= 1400mA I
OP
= 1400mA
MG1003-42 MG1007-42 MG1011-42 MG1020-M16
V
OP
= 12V @ V
OP
= 10V @ V
OP
= 8V @ V
OP
= 5.5V @
I
OP
= 1100mA I
OP
= 1200mA I
OP
= 1200mA I
OP
= 1600mA
MG1039-M16
V
OP
= 5.5V @
I
OP
= 1700mA
(26.5-35 GHz)
MG1040-M16
V
OP
= 5.5V @
I
OP
= 1800mA
(26.5-35 GHz)
MG1016-83B
V
OP
= 6V @
I
OP
= 1700mA
(18.0-23 GHz)
MG1004-42 MG1008-42 MG1012-42
V
OP
= 12V @ V
OP
= 10V @ V
OP
= 8V @
I
OP
= 1300mA I
OP
= 1600mA I
OP
= 1700mA
MG1034-42
V
OP
= 35V @
I
OP
= 8A
MG1060-42
V
OP
= 70V @
I
OP
= 6A
5W Pulsed
High Power
(9.3GHz)
10W Pulsed
Stacked
(9.3GHz)
200
250
300
350
400
500
Discrete Fr equency: Cathode Ground (CW EPI -Down)
10
20
50
100
150
Gunn Diodes
MG1001 - MG1060 Cathode Heat Sink
• 5.9-95GHz, CW designs to 500mW and pulsed designs to 10W
• High reliability, low phase noise, and low 1/f noise
• Transmitters and receivers, beacons, radars, radiometers, and instrumentation
• Motion detectors and automotive collision avoidance
MG1041-MG1058 Anode Heat Sink
• 9.5-25Ghz, pulsed and CW designs to 30mW
• High reliability, ultra low phase noise, and low 1/f noise
• Transmitters and receivers, beacons, radars, radiometers, and instrumentation
• Motion detectors and automotive collision avoidance
Polarity: Anode is the cap and Cathode is the heat-sink
Minimum X K
Minimum
X
K
MG1054-30
MG1044-130
V
OP
= 5V @
V
OP
= 8V @
IOP = 200mA
IOP = 120mA
MG1052-30 MG1058-30
MG1041-30 MG1045-30
VOP = 8V @ VOP = 5V @
V
OP
= 9V @ V
OP
= 8V @
IOP = 140mA IOP = 300mA
I
OP
= 110mA I
OP
= 150mA
MG1056-30
MG1042-30 MG1046-30
V
OP
= 8V @
VOP = 9V @ VOP = 8V @
I
OP
= 200mA
I
OP
= 140mA I
OP
= 200mA
Polarity: cathode is the cap and anode is the heat-sink
MG1043-30
V
OP
= 10V @
I
OP
= 180mA
Operation over a narrow band around a specific center frequency. Polarity: cathode is the cap and anode is the heat-sink
Other frequencies available upon request. Call factory. Pu lse widt h = 1 usec, Duty factor = 1% typ.
Operating v oltage (V
OP
) typ. Operat i n g cu rr en t (I
OP
) max.
Alternative pulse width and duty factors can be specified by customer
20
20
30
Discrete Frequency: Anode Ground (CW EPI-Up)
Discrete Frequency: Anode Ground (Pulsed EPI-Up)
5
5
10
10
Note: Operation over a narrow band around a
specific center frequency. Other frequencies
available upon request. Call factory.
Operating voltage (VOP) typ. Operating current
(IOP) max. Power measured with diode inserted in
critically coupled cavity.
Specifications @ 25°C.Specifications subject to
change without notice.
19
Input Output level
Frequency Up to 4. 0 4.0 to 8.0 8.0 to 12.0 12.0 to 18.0
Module Coaxial (MHz) (GHz) (GHz) (GHz) (GHz)
GG770140-01 GG770340-01 100 -10 -20 - -
GG770140-02 GG770340-02 200 -5 -20 - -
GG770140-03 GG770340-03 250 -5 -15 -20 -
GG770140-04 GG770340-04 500 0-10 -20 -
GG770140-05 GG770340-05 1000 5-5 -15 -15
GG770140-06 GG770340-06 1500 5 0 -10 -10
GG770140-07 GG770340-07 2000 5 0 -5 -10
Model Number
INSERTION
FLAT LEAKAGE
<= 1GHz
1.0-
1.5GHz
1.5-
1.85GHz
1.85-
3.5GHz
GG77015-01 10 – 3000 420 0.5 1.5:1 15 18 20 23
Flat Leakage
3
(dBm) Typ.
Model Freq
Range
(MHz)
CW
Power
PCW (W)
Peak
Power1
PP(W)
Ins. Loss2
IL(dB)
Typ.
VSWR2
Typ.
Surface Mount Limiter
Notes:
1. Pulse Width = 1usec, Duty Cycle = 0.001
2.P = -10dBm max
3.P = +30dBm, Pulse Width = 1usec, Duty Cycle = 0.001
4. RF Power Handling is linearly derated from full power at +25°C to zero power at +150°C
INSERTION LOSS FLAT LEAKAGE
Notes:
1. Minimum output power per line (dBm)
2.All specifications apply at 25°C with 0.5W incident RF power in a 50 ohm system (both source & load)
3. Performance above 12.0GHz is typical performance only.
4. Modular units require an external DC return at the output. Internal or RF decoupled DC returns
are available on special order.
5. VSWR is specified at 2.0:1 max (for all model numbers).
6.Modular package style is 210003; Coaxial package style is 210020
Comb Generators
20
STANDARD BROADBAND LIMITER MODULES
Insertion
Loss
(dB max)
0.5 1.5:1 100 3400 GG77012-01 210013
0.7 1.5:1 200 3200 GG77010-01 210001
0.7 1.5:1 200 3125 GG77011-01 210003
0.8 1.5:1 1000 5200 GG77013-01 210003
0.6 1.7:1 100 2500 GG77012-02 210013
0.7 1.7:1 200 2125 GG77010-02 210001
0.7 1.7:1 200 2100 GG77011-02 210003
1.2 1.7:1 1000 3200 GG77013-02 210003
11.8:1 200 2100 GG77010-03 210001
11.8:1 200 260 GG77011-03 210003
1.6 1.8:1 800 3200 GG77013-03 210003
1.9 1.9:1 200 2100 GG77010-04 210001
1.9 1.9:1 200 260 GG77011-04 210003
2.2 2.0:1 600 3200 GG77013-04 210003
22.0:1 200 2125 GG77010-05 210001
22.0:1 200 2100 GG77011-05 210003
2.2 2.0:1 600 3200 GG77013-05 210003
LOW LEAKAGE BROADBAND LIMITER MODULES
2.0 to 8.0 1.4 1.8:1 10 120 GG77014-01 210003
4.0 to 12.4 1.9 2.0:1 10 120 GG77014-02 210003
8.0 to 18.0 2.2 2.0:1 10 135 GG77014-03 210003
Survival
Peak
Power
(Watts)
CW
Flat
Leakage
(mW Max)
Model
Number Package
Style
0.5 to 4.0
2.0 to 8.0
4.0 to 12.0
8.0 to 18.0
2.0 to 18.0
Frequency
Range (GHz) VSWR
(max)
STANDARD BROADBAND CONNECTORIZED LIMITERS
Insertion
Loss
(dB max)
0.6 1.5:1 200 3200 GG77310-01 210019
0.7 1.5:1 200 3100 GG77311-01 210019
0.9 1.5:1 1000 5200 GG77313-01 210019
11.7:1 200 2125 GG77310-02 210019
11.7:1 200 2100 GG77311-02 210019
1.5 1.7:1 1000 3200 GG77313-02 210019
1.5 1.8:1 200 2100 GG77310-03 210019
1.5 1.8:1 200 260 GG77311-03 210019
2.1 1.8:1 800 3200 GG77313-03 210019
2.2 1.9:1 200 2100 GG77310-04 210019
2.5 1.9:1 200 260 GG77311-04 210019
2.5 2.0:1 600 3200 GG77313-04 210019
2.2 2.0:1 200 2125 GG77310-05 210019
2.5 2.0:1 200 2100 GG77311-05 210019
2.5 2.0:1 600 3200 GG77313-05 210019
Flat
Leakage
(mW Max)
Model
Number Package
Style
0.5 to 4.0
2.0 to 8.0
4.0 to 12.0
8.0 to 18.0
2.0 to 18.0
Frequency
Range (GHz) VSWR
(max) Survival
Peak
Power
(Watts)
CW
LOW LEAKAGE CONNECTORIZED LIMITERS
2.0 to 8.0 1.4 1.8:1 10 120 GG77314-04 210019
4.0 to 12.4 22.0:1 10 120 GG77314-05 210019
8.0 to 18.0 2.5 2.0:1 10 135 GG77314-06 210019
2.0 to 8.0 1.4 1.8:1 10 120 GG77314-07 210032
4.0 to 12.4 22.0:1 10 120 GG77314-08 210032
8.0 to 18.0 2.5 2.0:1 10 135 GG77314-09 210032
LOW FREQUENCY CONNECTORIZED LIMITERS
0.01 to 0.1 0.7 1.5:1 100 1200 GG77315-01 210019
0.1 to 0.5 0.7 1.5:1 100 1200 GG77315-02 210019
0.5 to 1.0 11.5:1 100 1200 GG77315-03 210019
0.01 to 0.1 0.7 1.5:1 100 1200 GG77315-04 210093
0.1 to 0.5 0.7 1.5:1 100 1200 GG77315-05 210093
0.5 to 1.0 11.5:1 100 1200 GG77315-06 210093
Notes:
All low level parameters specified
at -10 dBm input power
All limiter modules require an
external DC return of 1.0 ohm
or less except the GG77014-XX
series, which requires external
DC blocks at both ends.
Model numbers GG77314-
XX incorporate DC blocking
capacitors and do notrequire
either ground return or external
DC blocks
Peak power ratings apply @ 1.0
µsec pulse width and 0.001 duty
cycle
Spike leakage is 0.2 ergs (max)
based on the assumption that
the pulse rise time of the high
power pulse is greater than 20.0
nsec. Spike leakage for the low
frequency limiters is specified at
0.1 ergs (max)
Recovery time (3 dB) for all units
expect for the GG77014-XX,
GG77314-XX and GG77315-
XX series is 250nSec @ 100W
pulsed input power. Series
GG77314-XX and GG77014-
XX recovers in 500nSec at
rated pulsed power and
series GG77315-XX recovers
in 1.0µSec at rated pulsed
power
Limiting threshold (1 dB
compression point) is 5mW (min)
except for the GG77014-XX and
GG77314-XX series which is
1.0mW (min)
Leakage levels are specified at
rated peak power
PIN Diode Limiter Assemblies
Standard Broadband Limiter Modules
Low Leakage Broadband Limiter Modules
STANDARD BROADBAND LIMITER MODULES
Insertion
Loss
(dB max)
0.5 1.5:1 100 3400 GG77012-01 210013
0.7 1.5:1 200 3200 GG77010-01 210001
0.7 1.5:1 200 3125 GG77011-01 210003
0.8 1.5:1 1000 5200 GG77013-01 210003
0.6 1.7:1 100 2500 GG77012-02 210013
0.7 1.7:1 200 2125 GG77010-02 210001
0.7 1.7:1 200 2100 GG77011-02 210003
1.2 1.7:1 1000 3200 GG77013-02 210003
11.8:1 200 2100 GG77010-03 210001
11.8:1 200 260 GG77011-03 210003
1.6 1.8:1 800 3200 GG77013-03 210003
1.9 1.9:1 200 2100 GG77010-04 210001
1.9 1.9:1 200 260 GG77011-04 210003
2.2 2.0:1 600 3200 GG77013-04 210003
22.0:1 200 2125 GG77010-05 210001
22.0:1 200 2100 GG77011-05 210003
2.2 2.0:1 600 3200 GG77013-05 210003
LOW LEAKAGE BROADBAND LIMITER MODULES
2.0 to 8.0 1.4 1.8:1 10 120 GG77014-01 210003
4.0 to 12.4 1.9 2.0:1 10 120 GG77014-02 210003
8.0 to 18.0 2.2 2.0:1 10 135 GG77014-03 210003
Survival
Peak
Power
(Watts)
CW
Flat
Leakage
(mW Max)
Model
Number Package
Style
0.5 to 4.0
2.0 to 8.0
4.0 to 12.0
8.0 to 18.0
2.0 to 18.0
Frequency
Range (GHz) VSWR
(max)
Standard Broadband Connectorized Limiters
Low Leakage Connectorized Limiters
Low Frequency Connectorized Limiters
LOW LEAKAGE CONNECTORIZED LIMITERS
2.0 to 8.0 1.4 1.8:1 10 120 GG77314-04 210019
4.0 to 12.4 22.0:1 10 120 GG77314-05 210019
8.0 to 18.0 2.5 2.0:1 10 135 GG77314-06 210019
2.0 to 8.0 1.4 1.8:1 10 120 GG77314-07 210032
4.0 to 12.4 22.0:1 10 120 GG77314-08 210032
8.0 to 18.0 2.5 2.0:1 10 135 GG77314-09 210032
LOW FREQUENCY CONNECTORIZED LIMITERS
0.01 to 0.1 0.7 1.5:1 100 1200 GG77315-01 210019
0.1 to 0.5 0.7 1.5:1 100 1200 GG77315-02 210019
0.5 to 1.0 11.5:1 100 1200 GG77315-03 210019
0.01 to 0.1 0.7 1.5:1 100 1200 GG77315-04 210093
0.1 to 0.5 0.7 1.5:1 100 1200 GG77315-05 210093
0.5 to 1.0 11.5:1 100 1200 GG77315-06 210093
21
REFLECTIVE SWITCHES
Insertion
Loss
Isolation VSWR
(dB max) (dB min) (max)
GG71410-01 0.5 – 4.0 0.9 40 1.5:1 210059
GG71410-02 2.0 – 8.0 1.3 50 1.7:1 210059
GG71410-03 4.0 – 12.4 1.5 60 1.8:1 210059
GG71410-04 8.0 – 18.0 1.7 55 1.9:1 210059
GG71410-05 2.0 – 18.0 1.8 45 2.0:1 210059
GG72430-01 0.5 – 4.0 160 1.5:1 210047
GG72430-02 2.0 – 8.0 1.6 60 1.7:1 210047
GG72430-03 4.0 – 12.4 2.2 60 1.8:1 210047
GG72430-04 8.0 – 18.0 2.5 55 1.9:1 210047
GG72430-05 2.0 – 18.0 2.5 55 2.0:1 210047
GG73430-01 0.5 – 4.0 1.1 60 1.5:1 210079
GG73430-02 2.0 – 8.0 1.8 60 1.7:1 210079
GG73430-03 4.0 – 12.4 2.4 60 1.8:1 210079
GG73430-04 8.0 – 18.0 2.7 55 1.9:1 210079
GG73430-05 2.0 – 18.0 2.7 55 2.0:1 210079
GG74430-01 0.5 – 4.0 1.2 60 1.5:1 210049
GG74430-02 2.0 – 8.0 1.9 60 1.7:1 210049
GG74430-03 4.0 – 12.4 2.4 60 1.8:1 210049
GG74430-04 8.0 – 18.0 2.9 55 1.9:1 210049
GG74430-05 2.0 – 18.0 2.9 55 2.0:1 210049
GG75430-01 0.5 – 4.0 1.3 60 1.5:1 210050
GG75430-02 2.0 – 8.0 2.1 55 1.7:1 210050
GG75430-03 4.0 – 12.4 2.6 50 1.8:1 210050
GG75430-04 8.0 – 18.0 3.3 45 1.9:1 210050
GG75430-05 2.0 – 18.0 3.3 45 2.0:1 210050
GG75435-01 0.5 – 4.0 1.5 60 1.5:1 210051
GG75435-02 2.0 – 8.0 2.3 60 1.7:1 210051
GG75435-03 4.0 – 12.4 2.8 60 1.8:1 210051
GG75435-04 8.0 – 18.0 3.6 55 1.9:1 210051
GG75435-05 2.0 – 18.0 3.6 55 2.0:1 210051
Notes:
1. Required D.C. Bias: +5V and -8 to -15V
2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF)
3. DC blocks incorporated on all RF ports
SP4T
SP5T
SP6T
Model Number Frequency
Range Outline
SPST
SP2T
SP3T
ABSORPTIVE SWITCHES
Insertion
Loss
Isolation VSWR
(dB max) (dB min) (max)
GG71420-01 0.5 – 4.0 1.7 55 1.5:1 210059
GG71420-02 2.0 – 8.0 2.1 50 1.7:1 210059
GG71420-03 4.0 – 12.4 2.4 45 1.8:1 210059
GG71420-04 8.0 – 18.0 2.9 45 1.9:1 210059
GG71420-05 2.0 – 18.0 2.9 45 2.0:1 210059
GG72420-01 0.5 – 4.0 1.7 60 1.5:1 210047
GG72420-02 2.0 – 8.0 2.1 55 1.7:1 210047
GG72420-03 4.0 – 12.4 2.4 50 1.8:1 210047
GG72420-04 8.0 – 18.0 2.9 45 1.9:1 210047
GG72420-05 2.0 – 18.0 2.9 45 2.0:1 210047
GG73420-01 0.5 – 4.0 1.7 60 1.5:1 210079
GG73420-02 2.0 – 8.0 2.2 55 1.7:1 210079
GG73420-03 4.0 – 12.4 2.5 50 1.8:1 210079
GG73420-04 8.0 – 18.0 345 1.9:1 210079
GG73420-05 2.0 – 18.0 345 2.0:1 210079
GG74420-01 0.5 – 4.0 1.8 60 1.5:1 210049
GG74420-02 2.0 – 8.0 2.3 55 1.7:1 210049
GG74420-03 4.0 – 12.4 2.7 50 1.8:1 210049
GG74420-04 8.0 – 18.0 3.2 45 1.9:1 210049
GG74420-05 2.0 – 18.0 3.2 45 2.0:1 210049
GG75420-01 0.5 – 4.0 1.6 45 1.5:1 210050
GG75420-02 2.0 – 8.0 2.1 40 1.7:1 210050
GG75420-03 4.0 – 12.4 2.6 40 1.8:1 210050
GG75420-04 8.0 – 18.0 3.2 35 1.9:1 210050
GG75420-05 2.0 – 18.0 3.2 35 2.0:1 210050
GG75425-01 0.5 – 4.0 1.8 45 1.5:1 210051
GG75425-02 2.0 – 8.0 2.2 40 1.7:1 210051
GG75425-03 4.0 – 12.4 2.9 40 1.8:1 210051
GG75425-04 8.0 – 18.0 3.6 35 1.9:1 210051
GG75425-05 2.0 – 18.0 3.6 35 2.0:1 210051
Notes:
1. Required D.C. Bias: +5V and -8 to -15V
2. Switching Speed: 1usec maximum (50% TTL to 10/90% RF)
3. Only the switched arms are matched in the isolated state
4. The common arm, J1, is matched only when one path is in the loss state
5. DC blocks incorporated on all RF ports
SP4T
SP5T
SP6T
Model Number Frequency
Range Outline
SPST
SP2T
SP3T
REFLECTIVE SWITCHES
Insertion
Loss
Isolation VSWR
(dB max) (dB min) (max)
GG71410-01 0.5 – 4.0 0.9 40 1.5:1 210059
GG71410-02 2.0 – 8.0 1.3 50 1.7:1 210059
GG71410-03 4.0 – 12.4 1.5 60 1.8:1 210059
GG71410-04 8.0 – 18.0 1.7 55 1.9:1 210059
GG71410-05 2.0 – 18.0 1.8 45 2.0:1 210059
GG72430-01 0.5 – 4.0 160 1.5:1 210047
GG72430-02 2.0 – 8.0 1.6 60 1.7:1 210047
GG72430-03 4.0 – 12.4 2.2 60 1.8:1 210047
GG72430-04 8.0 – 18.0 2.5 55 1.9:1 210047
GG72430-05 2.0 – 18.0 2.5 55 2.0:1 210047
GG73430-01 0.5 – 4.0 1.1 60 1.5:1 210079
GG73430-02 2.0 – 8.0 1.8 60 1.7:1 210079
GG73430-03 4.0 – 12.4 2.4 60 1.8:1 210079
GG73430-04 8.0 – 18.0 2.7 55 1.9:1 210079
GG73430-05 2.0 – 18.0 2.7 55 2.0:1 210079
GG74430-01 0.5 – 4.0 1.2 60 1.5:1 210049
GG74430-02 2.0 – 8.0 1.9 60 1.7:1 210049
GG74430-03 4.0 – 12.4 2.4 60 1.8:1 210049
GG74430-04 8.0 – 18.0 2.9 55 1.9:1 210049
GG74430-05 2.0 – 18.0 2.9 55 2.0:1 210049
GG75430-01 0.5 – 4.0 1.3 60 1.5:1 210050
GG75430-02 2.0 – 8.0 2.1 55 1.7:1 210050
GG75430-03 4.0 – 12.4 2.6 50 1.8:1 210050
GG75430-04 8.0 – 18.0 3.3 45 1.9:1 210050
GG75430-05 2.0 – 18.0 3.3 45 2.0:1 210050
GG75435-01 0.5 – 4.0 1.5 60 1.5:1 210051
GG75435-02 2.0 – 8.0 2.3 60 1.7:1 210051
GG75435-03 4.0 – 12.4 2.8 60 1.8:1 210051
GG75435-04 8.0 – 18.0 3.6 55 1.9:1 210051
GG75435-05 2.0 – 18.0 3.6 55 2.0:1 210051
Notes:
1. Required D.C. Bias: +5V and -8 to -15V
2. Switching Speed: 50nsec maximum (50% TTL to 10/90% RF)
3. DC blocks incorporated on all RF ports
SP4T
SP5T
SP6T
Model Number Frequency
Range Outline
SPST
SP2T
SP3T
ABSORPTIVE SWITCHES
Insertion
Loss
Isolation VSWR
(dB max) (dB min) (max)
GG71420-01 0.5 – 4.0 1.7 55 1.5:1 210059
GG71420-02 2.0 – 8.0 2.1 50 1.7:1 210059
GG71420-03 4.0 – 12.4 2.4 45 1.8:1 210059
GG71420-04 8.0 – 18.0 2.9 45 1.9:1 210059
GG71420-05 2.0 – 18.0 2.9 45 2.0:1 210059
GG72420-01 0.5 – 4.0 1.7 60 1.5:1 210047
GG72420-02 2.0 – 8.0 2.1 55 1.7:1 210047
GG72420-03 4.0 – 12.4 2.4 50 1.8:1 210047
GG72420-04 8.0 – 18.0 2.9 45 1.9:1 210047
GG72420-05 2.0 – 18.0 2.9 45 2.0:1 210047
GG73420-01 0.5 – 4.0 1.7 60 1.5:1 210079
GG73420-02 2.0 – 8.0 2.2 55 1.7:1 210079
GG73420-03 4.0 – 12.4 2.5 50 1.8:1 210079
GG73420-04 8.0 – 18.0 345 1.9:1 210079
GG73420-05 2.0 – 18.0 345 2.0:1 210079
GG74420-01 0.5 – 4.0 1.8 60 1.5:1 210049
GG74420-02 2.0 – 8.0 2.3 55 1.7:1 210049
GG74420-03 4.0 – 12.4 2.7 50 1.8:1 210049
GG74420-04 8.0 – 18.0 3.2 45 1.9:1 210049
GG74420-05 2.0 – 18.0 3.2 45 2.0:1 210049
GG75420-01 0.5 – 4.0 1.6 45 1.5:1 210050
GG75420-02 2.0 – 8.0 2.1 40 1.7:1 210050
GG75420-03 4.0 – 12.4 2.6 40 1.8:1 210050
GG75420-04 8.0 – 18.0 3.2 35 1.9:1 210050
GG75420-05 2.0 – 18.0 3.2 35 2.0:1 210050
GG75425-01 0.5 – 4.0 1.8 45 1.5:1 210051
GG75425-02 2.0 – 8.0 2.2 40 1.7:1 210051
GG75425-03 4.0 – 12.4 2.9 40 1.8:1 210051
GG75425-04 8.0 – 18.0 3.6 35 1.9:1 210051
GG75425-05 2.0 – 18.0 3.6 35 2.0:1 210051
Notes:
1. Required D.C. Bias: +5V and -8 to -15V
2. Switching Speed: 1usec maximum (50% TTL to 10/90% RF)
3. Only the switched arms are matched in the isolated state
4. The common arm, J1, is matched only when one path is in the loss state
5. DC blocks incorporated on all RF ports
SP4T
SP5T
SP6T
Model Number Frequency
Range Outline
SPST
SP2T
SP3T
Switches
Absorptive Switches
Reflective Switches
22
RF, Microwave & mmWave Diode Package Styles
Microsemi Lowell offers a wide variety of package styles to meet specific design requirements.
Package selection is an important step in the design process. Designers need to be aware of parametric
trades-offs for the various package styles. Some considerations are:
• Electrical Performance.
• Thermal Requirements
• Hermetic / Non Hermetic
• Taped and Reeled for automatic assembly
• Cost versus Performance.
• RoHS compliance
• Consult the factory for package selection assistance.
This catalog contains outlines for a selection of our standard package styles. However, we supply
numerous variations of these packages to suit specific application needs. Microsemi can also work
together with engineers to develop custom package solutions.
Most of our packages are supplied with a gold finish suitable for ‘Lead Free’ and Pb/Sn assembly
techniques. Some RoHS compliant packages are supplied with a Matte Tin finish.
Microsemi offers:
• Hi-Rel Hermetic Packages
• High Frequency / Broadband (Through 40 Ghz) Discrete Packages
- Chip,Beamlead & Flip Chip devices
• High Power Packages
-Stud, ASM & SM Styles
• Low Cost High Volume Packages
- SOT 23
- Gigamite (GM1)
• Broadband performance, Economically Priced “MMSM”
- Style 206
• EPSMTM (Enhance Performance Surface Mount)
- Style 150, 250 and 450 Series
• RoHS Compliant Packaging
23
Diode Packages
Style 34 Style 79
Style 115A Style 127A
Style 127C Style 149
Packages are RoHS Compliant unless specified
24
Diode Packages
Style 174C Style 206 (MMSM™)
Style 250A - 250D Style 454
Style GM1 Style M1
Packages are RoHS Compliant unless specified
25
RF & Microwave Power Transistor Products
26
Among many diverse semiconductor business units,
the Microsemi RF Integrated Solutions (RFIS) business
unit was created in 2010 to best cohesively serve
the RF, microwave, and millimeter wave products
market. Along with diode and amplifier products were
included RF and microwave power transistor products.
The Microsemi RF and microwave power transistor
products group specializes in supporting customers
in the avionics, communications, and radar markets
with full line-ups of products meeting the demanding
requirements of transmitter amplifier systems, operating
in airborne, ground based, missile, ship borne and
space environments.
The Microsemi RFIS RF and microwave power
transistor products line heritage spans more than
35 years and includes legacy CW and high pulsed
power silicon bipolar junction transistor (BJT) devices
and products originally designed by Acrian, GHz
Technology, Advanced Power Technologies, Microwave
Semiconductor Corporation, Motorola Semiconductor,
Solid State Scientific, and SGS Thompson
Microelectronics (ST). Whether an airborne IFF (Identify
Friend or Foe), ground based primary surveillance
radar, or for satellite borne communications or imaging,
in the high reliability market most RF and microwave
power amplifier transmitter systems are designed for
a product life cycle of 15 to well beyond 25 years.
Microsemi RF & microwave transistor product offerings
are unique in supporting applications throughout
the full life cycle and thereby have cultivated a long
standing relationship with major system manufacturers
worldwide. Our Santa Clara California silicon wafer
foundry and Bend Oregon silicon and silicon carbide
wafer foundries produce a very broad range of transistor
die covering the frequencies from HF through 3.5
GHz, CW and Pulsed. Our facilities are fully ISO9001
certified and supply product for commercial, defense
and space applications. Automated assembly and test
equipment assures Microsemi customers consistent
high quality products resulting in highest factory yields
achievable which is passed on to Microsemi customers
as the lowest cost of ownership. Combined with the
use of the most advanced modern equipment for
both manufacturing and test, is statistical process
control (SPC) to achieve the best continual process
improvement (CPI).
Our Mission and Goals
Our mission is to be the world leader in high power
silicon and wide band gap (WBG) RF and microwave
power transistors for avionics, communications and
radar systems. With a sustained high research and
development investment and a keen eye for accretive
acquisitions, Microsemi will continue to be the market
leader, always pushing the performance envelope by
along with the best, and most efficient power amplifier
driver transistors, continually introducing the highest
power state of the art, most rugged and reliable RF,
microwave, and millimeter wave transistor products.
Whether a die, a packaged transistor, a 50Ω input
and output plug and play transistor pallet, or a more
integrated amplifier assembly, simply: The Microsemi
goal is to provide the customer with products that meet
all specified requirements over the life of the program.
This ensures that our customers will always achieve the
optimum system performance and lowest total cost of
ownership.
27
GaN & SiC / Wide Band Gap
2013 Short Form Catalog - Wide Band Gap SiC GaN on Sic
5/28/2013 1RFIS Diode-Transistor SFC May 2013 MASTER WBG May 25.xls
Pulsed Devices
Class AB
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vdd
(V)
η
Typ
(%)
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
1250 160 9.5 125 60 500 300 10 10:1 0.15 55KT-2 0150SC-1250M
100 11 10 125 50 30 300 10 10:1 2.5 55KT-FET 0405SC-100M
500 55 10 125 50 100 300 10 10:1 0.3 55KT-FET 0405SC-500M
1000 155 8.5 125 55 150 300 10 10:1 0.15 55ST-FET 0405SC-1250M
1500 270 8125 55 125 300 65:1 0.15 55ST-FET 0405SC-1500M
2200 440 8125 55 150 300 610:1 0.15 55TW-FET 0405SC-2200M
700 521.5 65 75 1000 2400** 6.4 3:1 0.25 55KR 1011GN-700ELM
650 520.8 65 67 100 2400** 6.4 3:1 0.25 55KR MDS-GN-650ELM
750 14.1 17.2 50 68 100 2400** 6.4 3:1 0.24 55KR MDSGN-750ELMV*
1000 17.8 17.5 50 55 100 10 13:1 0.12 55KR 1011GN-1000V*
700 12.6 19 50 60 100 20 63:1 0.21 55KR DME-GN-700V
20 0.4 17 50 55 10 128 10 3:1 6.56 55KR 0912GN-20V*
100 2.5 16 50 55 30 3000 30 3:1 1.07 55KR 0912GN-100LV*
300 417.5 65 55 50 128 10 3:1 0.3 55KR 0912GN-300
300 6.3 16.8 50 55 50 128 10 3:1 0.44 55KR 0912GN-300V*
600 818 65 55 100 128 10 3:1 0.2 55KR 0912GN-600
650 11.2 17.6 50 55 100 128 10 3:1 0.23 55KR 0912GN-650V*
20 0.4 17 50 50 20 300 10 5:1 5.39 55KR 1214GN-20V*
100 2.5 16 50 55 30 3000 30 3:1 1.1 55KR 1214GN-100LV*
280 6.3 16.7 50 60 50 200 20 3:1 0.57 55KR 1214GN-280LV*
500 818 60 55 50 300 10 3:1 0.16 55KR 1214GN-500
550 12 16.6 50 55 100 300 10 3:1 0.24 55KR 1214GN-550V*
150 10 11.76 50 50 30 100 10 5:1 0.92 55QP 2729GN-150V*
150 812.7 60 50 30 100 10 5:1 1.1 55QP 2729GN-150
270 16 12.7 50 55 60 100 10 3:1 0.38 55QP 2729GN-270V*
270 12.6 13.3 60 55 60 100 10 3:1 0.6 55QP 2729GN-270
400 28.2 11 65 50 80 100 10 3:1 0.24 55KR 2729GN-400
500 36 11.4 50 50 100 100 10 3:1 0.18 55KR 2729GN-500V*
500 35.5 11.5 65 54 100 100 10 3:1 0.2 55KR 2729GN-500
20 0.5 16 50 46 10 200 10 5:1 4.59 55QP 2731GN-20V*
100 811 50 50 30 3000 30 3:1 1.02 55QP 2731GN-100LV*
110 811.4 50 50 30 200 10 5:1 0.93 55QP 2731GN-110V*
110 7.5 11.7 60 42 30 200 10 5:1 1.1 55QP 2731GN-110M
200 12 12.2 60 42 500 200 10 3:1 0.6 55QP 2731GN-200M
220 16 11.4 50 50 80 200 10 3:1 0.47 55QP 2731GN-220V*
450 36 11 50 46 150 200 10 3:1 0.19 55KR 2731GN-450V*
35 212.4 60 40 15 300 10 5:1 2.4 55QP 2735GN-35M
100 811 60 40 30 300 10 5:1 1.1 55QP 2735GN-100M
20 113 50 45 10 300 10 5:1 4.32 55QP 3135GN-20V*
110 910.87 50 42 30 300 10 5:1 0.68 55QP 3135GN-110V*
120 910.8 60 48 30 300 10 3:1 1.1 55QP 3135GN-120M
170 12 11.5 60 35 60 300 10 3:1 0.6 55QP 3135GN-170M
200 16 11 50 40 80 300 10 3:1 0.38 55QP 3135GN-200V*
380 36 10 50 40 100 300 10 3:1 0.19 55KR 3135GN-400V*
100 910.45 60 50 30 100 10 3:1 155QP 4450GN-100
70 710 60 39 30 100 53:1 0.94 55QP 5259GN-70
960-1215 MHz HD Data Link
GaN on SiC HEMT
Common Source
1025-1150 MHz Air DME
GaN on SiC Class AB
Common Source
L-Band 1200-1400 MHz
GaN on SiC HEMT
Common Source
S-Band 2700-2900 MHz
GaN on SiC HEMT
Common Source
S-Band 2700-3100 MHz
GaN on SiC HEMT
Common Source
S-Band 2700-3500 MHz
GaN on SiC HEMT
Common Source
S-Band 3100-3500 MHz
GaN on SiC HEMT
Common Source
C-Band 4400-6000 MHz
GaN on SiC HEMT
Common Source
VHF 150-160 MHz
SiC SIT
Common Gate
UHF 406-450 MHz
SiC SIT
Common Gate
1030 MHz Mode-S ELM
GaN on SiC HEMT
1030/1090 MHz Mode-S ELM
GaN on SiC HEMT
Common Source
1030MHz Mode-S / TCAS / IFF
GaN on SiC HEMT
Common Source
• Pulsed & CW products for primary and secondary
radars & communications systems
• Wide band gap technologies allow higher voltage and
higher junction temperature operation: more power -
less space
• High Voltage GaN HEMT’s on SiC for best thermal
dissipation
• Wide band gap GaN on SiC HEMT (high electron
mobility transistor) & SiC SIT (static induction transistor)
semiconductor technologies
• VHF/UHF/L-Band SiC SIT devices deliver up to 2200W
power output under 300us pulse width and 10% duty
cycle pulsing
• GaN on SiC transistor devices deliver greater than
700W for L-Band pulsed avionics
• For pulsed radar GaN on SiC transistor devices deliver
greater than 500W at L-Band, 500W at S-Band, &
150W at C-Band
Microsemi supports customer specifications and develops custom
products. Please contact the factory for more information.
1 For best efficiency GaN common source class AB transistor gate
is turned off when pulse burst is not present peak & Idq=(Idq-ave)/
(duty cycle)
* Consult factory for final qualification information
** 32us on/ 18us off pulse burst of 48 pulses; total burst
width of 2400us
28
Pulsed High Power Pallets
2013 Short Form C ata log - Wide Band G a p SiC GaN on Sic
5/28/2013 1Joe RFIS Diode-T ransistor SFC May 2013 MAST ER May 17.xls
Si Bipolar
Class C
Frequency
Band
(MHz)
Pout
Min
(W)
Gain
Min
(dB)
Vcc/Vdd
(V)
η
Typ
(%)
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
Part
Number
1200-1400 550 8.5 42 55 -- 300 10 1214-550P
1200-1400 700 8.5 50 52 -- 300 10 1214-700P
1200-1400 800 8.6 50 52 -- 300 10 1214-800P
2700-2900 300 836 45 -- 300 10 2729-300P
2700-3100 200 836 45 -- 200 10 2731-200P
2700-3100 230 8.5 38 45 -- 200 10 2731-230P
L-Band 1200-1400MHz
Primary Surveillance Radar
S-Band 2700-3500MHz
Primary Surveillance Radar
Power Solutions Modules
Microsemi RF IS –TS supplies a selected list of Power Solution Modules which consist of a pair of transistors mounted on a copper heat spreader
and have terminal impedances of 50 Ohms thereby providing the user with a compact –ready to use ( Plug and Play) unit that can be combined to
form a high power amplifier with minimal design cost. The PSM units are built to order and delivered within a few weeks. The photos below show at
BJT as well as a GaN version.
Model
Application
Frequency Band
Technology
Pout
Pgain
Vcc/Vdd
Eff
PW
DF
W
dB
Volts
%
us
%
1214-550P
ATC Long Range Radar
1215 -1400 MHz
SiBJT
550 W
8.5 dB
42
55
300
10
1214-700P
ATC Long Range Radar
1215 -1400 MHz
SiBJT
700
8.5
50
52
300
10
1214-800P
ATC Long Range Radar
1215 -1400 MHz
SiBJT
800
8.6
50
52
300
10
2729-300P
ATC Airport Surveillance
2700 -2900 MHz
SiBJT
300
8.0
36
45
300
10
2731-200P
ATC Airport Surveillance
Dual Band
2700 -3100 MHz
SiBJT
200
8.0
36
45
200
10
2731-230P
ATC Airport Surveillance
Dual Band
2700-3100 MHz
SiBJT
230
8.5
38
45
200
10
• L&S-band pulsed radar and avionics pallets
• 50Ω In / 50Ω out plug and play
• SMA connector friendly
• Copper heatsinks for excllent heat dissipation
Microsemi RFIS – TS supplies a selected
list of Power Solution Modules which
consist of a pair of transistors mounted on
a copper heat spreader and have terminal
impedances of 50 Ohms thereby providing
the user with a compact – ready to use
(Plug and Play) unit that can be combined
to form a high power amplifier with minimal
design cost. The PSM units are built to
order and delivered within a few weeks. The
photos below show at BJT as well as a GaN
version.
Power Solutions Modules
29
Pulsed Primary Radar
• Pulsed radar products for system operating bands:
- VHF 150-160MHz
- UHF 406-450MHz
- P-Band 890-1000MHz
- L-Band 1.2-1.4GHz & 1480-1650MHz
- S-Band 2.7-3.5GHz
- C-Band 4.4-5.0GHz & 5.2-6.0GHz
• Characterized to meet the system signal format on
parameters such as: rise and fall time, pulse droop,
gain spread short pulse, long pulse and combinations,
gain change vs. frequency and temperature, and power
saturation
• Wide band gap GaN on SiC HEMT (high electron
mobility transistor) & SiC SIT (static induction transistor)
semiconductor technologies2
• Si bipolar traditional high reliability technology
transistor devices and products
Pulsed
Primary
Radar
Notes to Pulsed Radar Table:
Microsemi supports customer specifications and develops custom products.
Please contact the factory for more information.
1 For best efficiency GaN common source class AB transistor gate is turned
off when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle)
2 For UHF through C-Band pulsed radar transistors: 1st two digits are low
frequency band start and 2nd two digits are band end in 100’s of MHz
3 GN=GaN & SC=SiC in part number
30
Pulsed Primary Radar
Devices Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vcc/Vdd
(V)
η
Typ
(%)
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number3
1250 160 9.5 125 60 500 300 10 10:1 0.15 55KT-2 0150SC-1250M
300 33 9.6 40 50 -- 250 10 20:1 0.2 M106 MS2176
500 54 9.7 40 50 -- 250 10 20:1 0.15 M102 MS2200
100 11 10 125 50 30 300 10 10:1 2.5 55KT-FET 0405SC-100M
500 55 10 125 50 125 300 10 10:1 0.3 55KT-FET 0405SC-500M
1000 155 8.5 125 55 250 300 10 10:1 0.15 55ST-FET 0405SC-1250M
1500 270 8125 55 125 300 65:1 0.15 55ST-FET 0405SC-1500M
2200 440 8125 55 120 300 610:1 0.15 55TW-FET 0405SC-2200M
60 9.5 840 40 -- 150 53:1 155AW-1 0910-60M
150 23 8.1 48 40 -- 150 53:1 0.48 55KT-1 0910-150M
300 33 9.6 50 40 -- 150 53:1 0.22 55KT-1 0910-300M
20.35 7.5 28 45 -- CW 100 10:1 14 55LT 1014-2
61.2 728 40 -- CW 100 10:1 9.0 55LV 1014-6A
12 2.5 7.3 28 40 -- CW 100 10:1 4.5 55LT 1014-12
30 6 7 28 48 -- 2000 20 3:1 2.0 55AW-1 1214-30
32 5.3 7.8 36 45 -- 5000 20 3:1 2.3 55AW-1 1214-32L
55 12.3 6.5 28 45 -- 2000 20 3:1 1.0 55AW-1 1214-55
110 20 850 55 -- 330 10 3:1 0.65 55KT-1 1214-110M
140 27 7.1 36 48 -- 5000 20 3:1 0.55 55ST-1 1214-150L
220 40 7.4 40 50 -- 150 10 3:1 0.25 55ST-1 1214-220M
270 42.7 850 45 -- 100 10 3:1 0.22 55KT-1 1214-300
300 40 8.7 40 55 -- 150 10 3:1 0.29 55ST-1 1214-300M
370 50 8.7 50 50 -- 330 10 2:1 0.29 55ST-1 1214-370M
20 0.4 17 50 50 20 300 10 5:1 5.39 55KR 1214GN-20V*
100 2.5 16 50 50 30 3000 30 3:1 1.1 55KR 1214GN-100LV*
280 5.5 17 60 55 60 300 10 3:1 0.35 55KR 1214GN-280
280 6.3 16.7 50 60 50 200 20 3:1 0.57 55KR 1214GN-280LV*
500 818 60 55 50 300 10 3:1 0.16 55KR 1214GN-500
550 12 16.6 50 55 100 300 10 3:1 0.24 55KR 1214GN-550V*
20 3.5 836 40 -- 200 10 3:1 155LV 1517-20M
110 20.5 7.3 40 40 -- 200 10 3:1 0.5 55AW-1 1517-110M
500 -- 17 60 48 -- 400 10 3:1 0.16 55KR 1214GN-500
65 11.5 7.5 36 40 -- 120 10 2:1 0.5 55KS-1 3134-65M
100 16 836 40 -- 200 10 2:1 0.3 55KS-1 2731-100M
110 16 11.7 36 40 -- 200 10 5:1 1.1 55QP-1 2731-110M
125 23 836 35 -- 100 10 2:1 0.5 55KS-1 2729-125
150 21.7 8.3 38 50 -- 50 42:1 0.3 55KS-1 2931-150
170 24 8.5 36 50 -- 100 10 2:1 0.3 55KS-1 2729-170
150 10 11.76 50 50 30 100 10 5:1 0.92 55QP 2729GN-150V*
150 812.7 60 50 30 100 10 3:1 1.1 55QP 2729GN-150
270 12.6 13.3 60 55 60 100 10 3:1 0.6 55QP 2729GN-270
270 16 12.7 50 55 60 100 10 3:1 0.38 55QP 2729GN-270V*
400 28.2 11 65 50 80 100 10 3:1 0.24 55KR 2729GN-400
500 35.5 11.5 65 54 100 100 10 3:1 0.2 55KR 2729GN-500
500 36 11.4 50 50 100 100 10 3:1 0.18 55KR 2729GN-500V*
20 0.5 16 50 46 10 200 10 5:1 4.59 55QP 2731GN-20V*
100 811 50 50 30 3000 30 3:1 1.02 55QP 2731GN-100LV*
110 811.4 50 50 30 200 10 5:1 0.93 55QP 2731GN-110V*
110 7.5 11.7 60 42 30 200 10 5:1 1.1 55QP 2731GN-110M
200 12 12.2 60 42 50 200 10 3:1 0.6 55QP 2731GN-200M
220 16 11.4 50 50 80 200 10 3:1 0.47 55QP 2731GN-220V*
450 36 11 50 46 150 200 10 3:1 0.19 55KR 2731GN-450V*
35 212.4 60 40 15 300 10 5:1 2.4 55QP 2735GN-35M
100 811 60 40 30 300 10 5:1 1.1 55QP 2735GN-100M
20 113 50 45 10 300 10 5:1 4.32 55QP 3135GN-20V*
110 910.87 50 42 30 300 10 5:1 0.68 55QP 3135GN-110V*
120 910.8 60 48 30 300 10 3:1 1.1 55QP 3135GN-120M
170 12 11.5 60 35 60 300 10 3:1 0.6 55QP 3135GN-170M
200 16 11 50 40 80 300 10 3:1 0.38 55QP 3135GN-200V*
380 36 10 50 40 100 300 10 3:1 0.19 55KR 3135GN-400V*
100 910.45 60 50 30 100 10 3:1 155QP 4450GN-100
70 710 60 39 30 100 53:1 0.94 55QP 5259GN-70
50Ω Pallets
Si Bipolar - Class C Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vcc/Vdd
(V)
η
Typ
(%)
Idq
Ave†
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load θjc
(°C/W)
Size
(In)
Part
Number
550 -- 8.5 42 55 -- 300 10 -- -- -- 1214-550P
700 -- 8.5 50 52 -- 300 10 -- -- -- 1214-700P
800 -- 8.6 50 52 -- 300 10 -- -- -- 1214-800P
300 -- 836 45 -- 300 10 -- -- -- 2729-300P
200 -- 836 45 -- 200 10 -- -- -- 2731-200P
230 -- 8.5 38 45 -- 200 10 -- -- -- 2731-230P
VHF 150-160 MHz
SiC SIT Class AB
Common Gate
UHF 400-500 MHz
Si Bipolar Class C
Common Emitter
UHF 406-450 MHz
SiC SIT Class AB
Common Gate
P-Band 890-1000 MHz
Si Bipolar Class C
Common Base
L-Band 1200-1400 MHz
Si Bipolar Class C
Common Base
L-Band 1200-1400 MHz
GaN on SiC HEMT Class A B
Common Source
C-Band 4400-6000 MHz
GaN on SiC HEMT
Common Source Class AB
L-Band 1200-1400MHz
Primary Surveillance Radar
S-Band 2700-2900MHz
Primary Surveillance Radar
S-Band 2700-3100MHz
Primary Surveillance Radar
L-Band 1480-1650 MHz
Si Bipolar Class C
Common Base
S-Band 2700-3500 MHz
Si Bipolar Class C
Common Base
S-Band 2700-2900 MHz
GaN on SiC HEMT
Common Source Class AB
S-Band 2700-3100 MHz
GaN on SiC HEMT
Common Source Class AB
S-Band 2700-3500 MHz
GaN on SiC HEMT
Common Source Class AB
S-Band 3100-3500 MHz
GaN on SiC HEMT
Common Source Class AB
31
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vcc/V
dd
(V)
η
Typ
(%)
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
150 25 7.8 50 40 -- 10 1 30:1 0.3 M138 MS2393
175 25 8.5 50 40 -- 10 1 30:1 0.45 55CX-1 TPR175
400 75 7.3 50 40 -- 10 1 20:1 0.2 55CT-1 TPR400
0.2 0.02 10 18 -- -- CW -- 30:1 25 M115 MS2290
0.6 0.05 10.9 18 -- -- CW -- 30:1 35 M220 MS2203
0.6 0.05 10.9 18 -- -- CW -- 30:1 25 M115 MS2204
20.25 9 28 35 -- 10 1 -- 10 M220 MS2201
4 0.4 10 28 35 -- 10 1 -- 35 M115 MS2206
35 5.6 8 50 30 -- 10 1 -- 2 M115 MS2341
75 13 7.6 50 -- -- 10 1 -- 0.8 M115 MS2361
95 10 9.7 40 40 -- 10 1 -- 0.6 M210 MSC1100
350 70 6.9 50 40 -- 10 1 20:1 M218 MSC1350M
450 90 7 50 40 -- 10 1 25:1 0.12 M216 MSC1450M
500 150 5.2 50 35 -- 10 1 10:1 0.1 55CT-1 TPR500
500 150 5.2 50 35 -- 10 1 10:1 0.1 55KT-1 TPR500A
600 150 6 50 35 -- 10 1 30:1 0.06 M112 MS2473
700 150 6.7 50 35 -- 10 1 10:1 0.08 55KT-1 TPR700
1000 208 6.8 50 43 -- 10 1 9:1 0.06 55KV-1 TPR1000
1000 158 8 50 45 -- 1 1 4:1 0.08 55SW-1 ITC1000
1000 100 10 50 50 -- 1 1 4:1 0.08 55SW-1 ITC1100
400 63 8 50 45 -- 32 2 15:1 0.17 M216 MS2207
450 100 6.5 45 35 -- 32 2 10:1 0.06 55KT-1 TCS450
800 100 9 45 45 -- 32 1 4:1 0.09 55SM-1 TCS800
1200 150 9 50 45 -- 32 2 4:1 0.02 55TU-1 TCS1200
70 6.5 10.3 50 35 -- 128† 1 5:1 0.8 55CX-1 MDS70
75 9 9.2 50 48 -- 32 2 10:1 0.86 M214 MS2228
150 20 10 50 40 -- 128† 1 3:1 0.5 55AW-1 MDS150
400 90 6.5 45 35 -- 32 1 10:1 0.15 55KT-1 MDS400
500 70 8.5 50 45 -- 32 2 4:1 0.12 55ST-1 10500
500 70 8.5 50 45 -- 32 2 4:1 0.12 55SM-1 10502
800 100 9 50 40 -- 128† 1 4:1 0.12 55ST-1 MDS800
1100 115 9.4 50 40 -- 128† 1 4:1 0.02 55TU-1 MDS1100
1400 170 9.1 52 45 -- 32 2 3:1 0.025 55TU-1 MDS1400
60 6 10 50 40 -- 2400 6.4 2:1 0.5 55AW-1 MDS60L
140 15.7 9.5 50 50 -- 2400†† 6.4 2:1 0.15 55AW MDS140L
500 70 8.5 50 55 -- 2400†† 6.4 3:1 0.15 55ST-1 MDS500L
1030 MHz Mode-S ELM 700 521.5 65 70 65 2400†† 6.4 3:1 0.25 55KR 1011GN-700ELM
GaN on SiC HEMT Class AB
Common Source 650 520.8 65 65 100 2400†† 6.4 3:1 0.25 55KR MDS-GN-650ELM
750 14.1 17.2 50 68 100 2400†† 6.4 3:1 0.24 55KR MDS-GN-750ELMV*
1030 MHz Mode-S/TCAS/IFF 1000 17.8 17.5 50 55 100 32 2 3:1 0.12 55KR 1011GN-1000V*
GaN on SiC HEMT Class AB
Common Source
1030/1090 MHz Mode-S
Silicon Bipolar Class C
Common Base
1030/1090 MHz MODE S-ELM
Silicon Bipolar Class C
Common Base
1030/1090 MHz Mode-S ELM
GaN on SiC HEMT Class AB
Common Source
1030/1090 MHz
Transponder/Interrogator
Silicon Bipolar Class C
Common Base
1090 MHz Transponder
Silicon Bipolar Class A
Common Emitter
1090 MHz Transponder
Silicon Bipolar Class C
Common Base
1030 MHz Interrogator
Silicon Bipolar Class C
Common Base
1090 MHz TCAS
Silicon Bipolar Class C
Common Base
1030 MHz TCAS
Silicon Bipolar Class C
Common Base
Avionics
• Highest performance output power devices for all pulsed
L-Band avionics systems
• Optimal devices for: Mode-5 IFF interrogators, Mode-S ELM
transponders, TACAN, DME, Data Links, TCAS
• Characterized to meet avionics system specifications on
parameters such as: rise and fall time, pulse droop,
gain spread multimode pulsing combinations, gain change
vs. frequency and temperature, power saturation, and
spectral masks
• Wide band gap GaN on SiC HEMT (high electron
mobility transistor)2
• Si bipolar traditional high reliability technology transistor
devices and products
32
Avionics
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vcc/
Vdd
(V)
η
Typ
(%)
Idq
Ave1
(mA)
Pulse
Width
(μ s)
Duty
Cycle
(%)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
7 1 8.5 50 25 -- 10 1 10:1 3.5 55CT-1 0912-7
15 1.5 10 50 30 -- 10 1 10:1 2 M105 MS2321
25 3.5 8.5 50 45 -- 10 1 10:1 1.4 55CT-1 0912-25
45 7 8.1 50 45 -- 10 1 10:1 0.8 55CT-1 0912-45
0.6 0.05 10.8 18 -- -- CW -- 10:1 33 55FW-2 1000MP
2 0.3 10 35 45 -- 20 1 10:1 10 55FW-1 1002MP
2 0.25 9 35 35 -- 10 1 20:1 10 M115 MS2202
4 0.5 9 35 35 -- 10 1 20:1 7 55FW-1 1004MP
4 0.5 9 28 35 -- 10 1 20:1 5 M220 MS2205
5 0.55 9.5 28 -- -- 10 1 20:1 8 M115 SD1526-01
15 1.5 10 50 35 -- 10 1 10:1 2 55FW-1 1015MP
15 1.5 10 50 -- -- -- -- -- -- M115 MSC1015MP
35 3.5 10 50 45 -- 10 1 10:1 1 55FW-1 1035MP
35 3 10.6 50 43 -- 10 1 20:1 1 M220 MS2553
35 3 10.7 50 48 -- 10 1 20:1 1 M115 MS2575
75 12 7.8 50 45 -- 10 1 10:1 0.8 55FW-1 1075MP
75 13 7.6 50 -- -- -- -- -- 1 M115 MSC1075MP
90 14 8.1 50 45 -- 10 1 10:1 0.8 55FW-1 1090MP
90 13 8.4 50 -- -- 10 1 20:1 0.6 M115 SD1536-03
90 13 8.4 50 -- -- 10 1 20:1 0.6 M105 SD1536-08
150 25 7.8 50 40 -- 10 1 20:1 0.6 55AY-1 DME150
175 30 7.6 50 40 -- 10 1 20:1 0.3 M218 MSC1175M
250 60 6.2 50 40 -- 10 1 20:1 0.2 M218 MS2554
300 70 6.3 50 35 -- 10 1 30:1 0.2 M103 MS2421
375 85 6.4 50 40 -- 10 1 30:1 0.2 55AT-1 DME375A
400 90 6.5 50 -- -- 10 1 30:1 0.12 M112 MS2441
400 90 6.5 50 40 -- 10 1 25:1 0.12 M216 MSC1400M
500 125 6 50 35 -- 10 1 10:1 0.1 55KT-1 DME500
550 150 5.6 50 -- -- 10 1 30:1 0.06 M112 MS2472
800 100 9 50 40 -- 10 1 5:1 0.05 55ST-1 DME800
700 12.6 17.4 50 60 100 20 6 3:1 0.21 55KR DME-GN-700V*
6 0.7 9.3 28 45 -- 6.4 21 5:1 7 M222 MS2211
15 2.3 8.1 28 45 -- 10 21 20:1 3 M222 MS2212
25 5 7 36 40 -- 10 40 5:1 1.8 55AT-1 JTDB25
30 5 7.8 35 40 -- 6.4 21 15:1 2.2 M214 MS2213
50 10 7 36 40 -- 10 22 10:1 0.8 55AT-1 JTDA50
75 15 7 36 40 -- 10 40 3:1 0.8 55AT-1 JTDB75
85 15 7.5 35 40 -- 6.4 21 5:1 0.75 M218 MS2214
145 25 7.6 36 45 -- 7 22 3:1 0.5 55KT-1 JTDA150A
150 26.7 7.5 35 45 -- 7 21 -- 0.57 M216 MS2215
15 3 7 40 40 -- 20 5 10:1 1 55LT-1 TAN15
75 12 8 50 40 -- 20 5 30:1 0.6 55AZ-1 TAN75A
90 13 8.4 50 38 -- 10 10 -- 0.8 M218 MS2209
150 30 7 50 38 -- 20 5 10:1 0.3 55AT-1 TAN150
250 60 6.2 50 40 -- 20 5 5:1 0.3 55AT-1 TAN250A
250 40 8 50 38 -- 20 5 -- 0.28 M214 MS2267
300 60 7 50 38 -- 10 10 15:1 0.16 M216 MS2210
300 60 7 50 45 -- 20 5 5:1 0.15 55KT-1 TAN300
350 60 7.6 50 38 -- 10 10 15:1 0.16 M216 MS2272
350 70 7 50 40 -- 10 10 3:1 0.12 55ST-1 TAN350
500 70 9 50 40 -- 10 10 3:1 0.07 55ST-1 TAN500
20 0.4 17 50 55 10 128 10 5:1 6.56 55KR 0912GN-20V*
100 2.5 16 50 55 30 3000 30 3:1 1.07 55KR 0912GN-100LV*
300 4 17.5 65 55 50 128 10 3:1 0.3 55KR 0912GN-300
300 6.3 16.8 50 55 50 128 10 3:1 0.44 55KR 0912GN-300V*
600 8 18 65 55 100 128 10 3:1 0.2 55KR 0912GN-600
650 11.2 17.6 50 58 100 128 10 3:1 0.23 55KR 0912GN-650V*
960-1215 MHz HD Data LInk
GaN on SiC HEMT Class AB
Common Source
960-1215 MHz DME/TACAN
Si Bipolar Class C
Common Base
1025-1150 MHz Air DME
Si Bipolar Class A CW
Common Emitter
1025-1150 MHz Air DME
Si Bipolar Class C
Common Base
1025-1150 MHz Air DME
GaN on SiC Class AB
Common Source
960-1215 MHz Data Link
Si Bipolar Class C
Common Base
960-1215 MHz TACAN
Si Bipolar Class C
Common Base
Microsemi supports customer specifications and develops custom products.
Please contact the factory for more information.
1 For best efficiency GaN common source class AB transistor gate is turned off
when pulse burst is not present peak & Idq=(Idq-ave)/(duty cycle)
2 “GN” in part number denotes a GaN on SiC device
† Burst of 0.5us ON/0.5us OFF x128 repeated at 6.4ms
†† Burst of 32us ON/18us OFF x 48 repeated at 24ms
*Consult factory for final qualification information
33
Microsemi Transistor Solutions:
Hi Rel Screening Capability and Products
Post Production Screening Tests
One hundred percent electrical screening of finished
product is performed to guarantee that products
comply with the customer supplied specification or
data sheet. One hundred percent reliability testing is
designed to remove latent failures and is also performed
on all Microsemi RF & microwave power transistor
products. These tests are designed with a “screening
by failure model” philosophy in mind. Our standard
100% processing is detailed in Table I. Standard 100%
processing complies with MIL-STD-883 and MIL-STD-750.
Qualification Tests
All hermetic (solder sealed) Microsemi RF & microwave
power transistor devices are capable of passing
the standard matrix of environmental testing per
MIL-STD-750. The tests stress the hermetic seal, the
lead attachment and in general assure that the devices
which pass the test matrix are inherently reliable in severe
military-type environments. The tests are outlined in
Table 2. Samples of current production, as well as samples
of any new package design, are routinely subjected to this
standard test matrix. Data exists in reliability files verifying
conformance of Microsemi transistor devices in various
packages to the environmental test sequence. This test
matrix complies with MIL-STD-750.
High Reliability Transistors
Notes:
1. Destructive test on
line monitor of
production equipment
A) Standard Manu-
facturing Testing
B) Reliability Testing
C) High Reliability
Screening
MIL-STD-750 or TS (as noted) Level
TEST TEST METHOD A B C JANTXV
Wafer Probe -- DC Wafer Probe Spec 100% 100% 100% 100%
SEM Wafer Inspection MIL-STD-883 -- -- OPT --
Wafer Qual DC/RF Electrical All Wfr All Wfr All Wfr All Wfr
Die Visual TS Specification 100% 100% 100% 100%
Die Shear 2017 Note1 Note1 Note1 Note1
Bond Strength 2037 Note1 Note1 Note1 Note1
Precap Visual 2072 AQL 100% 100% 100%
100% Electrical TS Specification 100% 100% 100% 100%
Storage 1032 -- OPT 100% 100%
Temperature Cycling 1051 Condition D -- OPT 100% 100%
Constant Acceleration 2006, Y1 -- OPT 100% 100%
PIND Test 2052 -- OPT 100% 100%
Gross Leak 1071.1 Condition H 100% 100% 100% 100%
Fine Leak 1071.1 Condition C AQL 100% 100% 100%
HTRB 1039 Condition A, 48 hrs -- 100% 100% 100%
Burn - In 1039 Condition B -- 100% 100%
DC Electrical Product Specification 100% 100% 100% 100%
RF Electrical Product Specification 100% 100% 100% 100%
Ext Visual / Mechanical 2071 AQL AQL AQL --
Final QA TS Specification AQL AQL AQL --
Group A,B,C Done on Request -- -- LTPD LTPD
Table 1
Application Freq Range Power Out (W) Application Model Freq Range Power Out (W)
UHF Comm 100-500 MHz 50 Class A 23003H/HS 1000-2300 MHz 0.3
225-400MHz 125 23A008H/HS 1000 - 2300 M H z 0.8
500-1000MHz 50
UHF Radar 0405SC-1000MH 406 - 450 MH z 1000 pk
S-Band Telem 2200-2400 MHz 6
2200-2500MHz 4P-Band Radar 0709-50H 650-850 MHz 50 Pk
2300-2400 M H z 20 0709-240H 650-850 MHz 240 Pk
0709-500H 650 - 850 MHz 500 Pk
Avionics 1030/1090MHz 600 Pk
1030 MHz 1100 Pk L-Band Radar 1014-6AH 1215-1400 MHz 6
960-1215MHz 75 Pk 1214-30H 1215-1400 MHz 30 pk
960-1215MHz 250 Pk 1214-55H 1214-1400 MHz 55 pk
960-1215MHz 350 Pk 1214-300HS 1215-1400 MH z 300 pk
960-1215MHz 75 pk
960-1215MHz 150 pk S-Band Radar 2729-170H 2700-2900 MHz 170 Pk
34
Hi Rel Screening
High Reliability Transistors
MIL-STD-750 or TS (as noted) Level
TEST TEST METHOD A B C JANTXV
Wafer Probe -- DC Wafer Probe Spec 100% 100% 100% 100%
SEM Wafer Inspection MIL-STD-883 -- -- OPT --
Wafer Qual DC/RF Electrical All Wfr All Wfr All Wfr All Wfr
Die Visual TS Specification 100% 100% 100% 100%
Die Shear 2017 Note1 Note1 Note1 Note1
Bond Strength 2037 Note1 Note1 Note1 Note1
Precap Visual 2072 AQL 100% 100% 100%
100% Electrical TS Specification 100% 100% 100% 100%
Storage 1032 -- OPT 100% 100%
Temperature Cycling 1051 Condition D -- OPT 100% 100%
Constant Acceleration 2006, Y1 -- OPT 100% 100%
PIND Test 2052 -- OPT 100% 100%
Gross Leak 1071.1 Condition H 100% 100% 100% 100%
Fine Leak 1071.1 Condition C AQL 100% 100% 100%
HTRB 1039 Condition A, 48 hrs -- 100% 100% 100%
Burn - In 1039 Condition B -- 100% 100%
DC Electrical Product Specification 100% 100% 100% 100%
RF Electrical Product Specification 100% 100% 100% 100%
Ext Visual / Mechanical 2071 AQL AQL AQL --
Final QA TS Specification AQL AQL AQL --
Group A,B,C Done on Request -- -- LTPD LTPD
MIL-STD-750
EXAMINATION OR TEST METHOD CONDITION Class B LTPD
Group B Tests
Subgroup 1
Physical Dimensions 2066 Test Condition A 15
Subgroup 2
(a) Marking Permanency 2008 Test Condition B
3.2.1 4 devices ( no failures)
(b) Visual & Mechanical 2071 Test Condition B 1 device ( no failures)
(c) Bond Strength 2037 Test Condition D 15
(d) Die Shear 2017
Subgroup 3
Solderability 2026 Soldering temp of
260+ 10oC 15 Leads
Subgroup 4
Terminal Strength 2036 Test Condition B2 15
Seal 1071
(a) Fine Condition H
(b) Gross Condition C
Group C Tests
Subgroup 1
Thermal Shock 1011 Test Condition B 15
Temperature Cycling 1010 Test Condition C
Moisture Resistance 1004
Seal 1014
(a) Fine Condition H
(b) Gross Condition C
End Point electrical parame-
ters As Specified
Subgroup 2
Mechanical Shock 2016 3 Axis 15
Vibration Variable 2056
Constant Acceleration 2006
Seal 1071
(a) Fine Condition H
(b) Gross Condition C
End Point Electrical
parameters As Specified
Subgroup 3 15
Salt Atmosphere 1041
Table 2
35
HF Industrial/Communications
• 2-175MHz single ended or balanced transistors Si bipolar for
Class AB/C operation
• 1-250W CW or Pulsed at 28V & 50V
• RF Power for FM/SSB mobile and base stations, high power
amplifiers, and industrial, scientific, and medical equipment
VHF Communications
• 50-175MHz single ended or balanced transistors for
common emitter class C operation Si Bipolar
• 1-150W CW biased at 12.5V, 28V, or 50V
• AM/FM mobile and base station applications
UHF Communications
• Common emitter and common base class C single-
ended and balanced Si bipolar transistor
• 225-400MHz, 1.5-125W, 12.5V or 28V
• 450-512MHz, 1-45W at 12.5V
• 836-960MHz, 1-45W at 12.5V
Military Communications
• 100-500MHz, 1-125W CW, 28V, ClassA/AB/C single-
ended or balanced Si bipolar transistors
HF / VHF / UHF Communications
HF Si Bipolar Class
AB
Pout
Min
(W)
Pout
Max
(W)
Gain
min
(dB)
Vcc
(V)
η
Typ
(%)
Icq
(mA)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
100 7.9 11 12.5 50 150 20:1 0.6 M174 MS1051
130 8.2 12 28 50 150 20:1 1M174 MS1078
150 614 50 50 100 20:1 0.75 M174 MS1007
150 614 50 50 100 20:1 0.75 M164 MS1008
220 13.9 12 28 50 750 20:1 0.7 M174 MS1076
220 11 13 50 50 150 20:1 0.7 M174 MS1079
250 10 14 50 50 150 20:1 0.4 M177 MS1004
250 10 14 50 50 150 20:1 0.4 M177 MS1011
HF/VHF/UHF Si
Bipolar Class C
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vcc
(V)
η
Typ
(%)
Cob
(pF)
VSWR
Load θjc
(°C/W)
Case
Style
Part
Number
20 0.65 15 12.5 60 100 20:1 2.2 M113 MS1227
30 0.48 18 28 60 -- 20:1 2.2 M113 MS1226
75 3.8 14 12.5 60 350 20:1 2.2 M174 MS1001
200 12 12 50 60 300 30:1 0.65 55HX-2 S200-50
250 914.5 50 37 360 20:1 0.4 M177 MS1004
0.75 0.015 17 12.5 -- 4 -- 125 SO-8 SRF4427
10.1 10 12.5 50 4 -- 175 TO-39 2N4427
1.4 0.1 12 7.5 50 620:1 35 M123 MS1403
1.75 0.125 12 12.5 50 15 -- 35.7 TO-39 MRF607
2.5 0.2 11.5 7.5 50 19 20:1 11.6 M123 MS1401
30.5 812.5 50 15 -- 35 TO-39 2N6255
40.25 12 12.5 50 20 -- 22 TO-39 SD1127
10 0.1 10 12.5 -- 45 20:1 8.75 M135 SD1143
10 0.1 10 12.5 -- 45 20:1 8.75 M113 SD1143-01
10 110 28 55 15 20:1 13.5 M135 SD1013
10 110 28 55 15 20:1 13.5 M113 SD1013-03
15 112 12.5 60 45 20:1 8.75 M122 MS1261
15 3.5 6.3 12.5 60 10 20:1 5.6 M113 SD1014-06
20 38.2 28 55 35 -- 5.83 M113 MS1408
20 38.2 28 60 35 20:1 5.8 M135 MS1406
2-30 MHz
Common Emitter
HF 2-50 MHz
Common Emitter
VHF 100-175 MHz
Common Emitter
continued next page
36
HF / VHF / UHF Communications
HF/VHF/UHF Si
Bipolar Class C
Pout
Min
(W)
Pin
Max
(W)
Gain
Min
(dB)
Vcc
(V)
η
Typ
(%)
Cob
(pF)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
30 310 13.5 55 95 20:1 1.2 M135 MS1504
30 310 12.5 -- 120 10:1 1.2 M135 MS1336
30 310 12.5 -- 120 10:1 1.2 M113 MS1337
30 310 28 -- 250 -- 4.4 M135 SD1015
30 310 13.5 55 95 20:1 1.2 M113 MS1505
40 77.6 28 60 65 20:1 2.9 M135 SD1224
40 5 9 13.6 55 95 20:1 1.2 M135 MS1506
40 5 9 13.6 -- 95 -- 1.2 M113 MS1507
40 14 4.5 12.5 70 200 10:1 2.2 M135 SD1018
40 14 4.5 12.5 70 200 10:1 2.2 M113 SD1018-06
60 12 728 55 80 20:1 2.3 M135 MS1329
80 10 927 65 75 30:1 255HT-2 VAM80
100 25 628 50 150 -- 0.75 M174 MS1204
100 25 612.5 -- 390 10:1 0.65 M111 MS1003
100 20 728 60 220 30:1 0.65 55HV-2 VMIL100
150 18 9.5 28 70 150 20:1 0.75 M174 MS1281
30.2 11.8 28 60 4.5 30:1 16 55FT-2 UMIL3
10 0.65 12 28 50 12 -- 6.4 M123 MS1642P
10 110 28 60 11.5 30:1 6.3 55FT-2 UMIL10
10 110 28 50 11.5 10:1 6.3 55FU-2 UMIL10P
25 3.2 8.9 28 50 22 5:1 2.5 55HV-2 UMIL25
60 88.8 28 60 70 5:1 1.25 55HW-2 UMIL60
70 10 8.5 28 50 65 20:1 0.8 M111 MS1511
80 10 928 60 80 5:1 0.8 55HV-2 UMIL80
100 20 728 60 100 -- 0.7 M111 MS1503
100 19 7.2 28 55 120 5:1 0.7 55HV-2 UMIL100
100 16 828 55 120 4.5:1 0.7 55JU-2 UMIL100A
125 25 8.5 28 60 70 -- 0.65 55JT-2 0204-125
50 78.5 28 55 52 5:1 1.25 55JT-2 0105-50
100 28.2 5.5 28 55 100 5:1 0.67 M168 MS1509
20.2 10 -- 12.5 10 -- 35 M122 MS1402
20.32 850 12.5 15 -- 35 TO-39 SD1444
30.34 9.5 50 12.5 12 -- 35 TO-39 MS1649
50.7 8.5 50 12.5 19 20:1 11.6 M122 MS1404
50.5 10 60 12.5 15 -- 11.6 M123 MS652S
10 2 7 -- 12.5 26 20:1 3M122 MS1426
10 2.5 6 -- 12.5 30 -- 4.7 M122 SD1146
15 2.5 7.8 50 12.5 50 -- 4.6 M142 MS1263
15 2.7 7.5 -- 12.5 50 20:1 4.6 M111 SD1429-03
25 66.2 -- 12.5 70 20:1 2.5 M111 SD1422
1.5 0.24 812.5 60 6 -- 25 Pwr Ma cro MRF557
45 15 4.7 12.5 -- 100 20:1 1.2 M142 MS1455
UHF 836-960 MHz
General Purpose
UHF 225-400 MHz
Common Emitter
UHF 100-500 MHz
Common Emitter
UHF 470 MHz
General Purpose
37
Power Devices Freq
(MHz)
Supply
(V)
Pout
(W)
Gain
(dB)
Style Part
Number
175 12.5 110 TO-39 2N4427
175 12.5 117 SO-8 SRF4427
175 12.5 1.75 11.5 TO-39 MRF607
175 12.5 3 7.8 TO-39 2N6255
175 12.5 412 TO-39 SD1127
400 28 110 TO-39 2N3866
400 28 110 TO-39 2N3866A
400 28 110 SO-8 MRF3866
470 12.5 310 TO-39 MS1649
470 12.5 2 8 TO-39 SD1444
870 12.5 0.75 8Pwr Macro MRF837
870 12.5 1.5 8 Pwr Macro MRF557
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
Packing
Up to 1 GHz
Si Bipolar Class
A/B/C
Common Emitter
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
500 Units Bulk
Small Signal Freq
(MHz)
Freq
(MHz)
GNF
(MHz)
VCE
(V)
Ic
(mA)
NF min
(dB)
Case
Style
Part
Number
100 1500 20 6 5 4.5 TO-72 2N5179
200 1200 12 15 50 -- TO-39 2N5109
200 1400 - 6 1.5 4.5 SOT-23 MMBR5179LT1
250 1400 13.5 25 50 -- TO-39 MRF545
250 1500 13.5 25 50 -- TO-39 MRF544
300 3000 12 15 40 -- TO-39 MRF586
300 3000 10 15 60 2.5 TO-39 MRF517
400 1200 12 6 1 -- TO-72 2N5031
500 1300 20 525 2.5 TO-72 BFY90
500 1400 14 10 14 5TO-72 2N6304
500 1600 13 10 12 5.5 TO-72 2N2857
500 4500 -1.5 3 3 SOT-23 BFR92ALTI
500 4500 15 10 15 2.5 TO-72 MRF914
500 5000 16 530 1.9 Macro T BFR91
500 5000 18 514 2.5 Macro T BFR90
1000 4000 710 15 1.5 TO-72 MRF904
1000 6000 11 10 10 2.9 SOT-23 MMBR911LT1
Up to 1 GHz
Si Bipolar Class A
Common Emitter
•TransistorsforcommonemitterclassA,B,andCoperation
upto1GHz
•Devicegain>8dB&Poutupto4Wat7.5Vand12V
•Mobileandheldandmobilepredriveramplierapplications
•Thru-holemetalcans,plasticMacro,andSO-8packages
•Applicationsinclude:landmobileandRFSradios,wirelessalarms,
andkeylessentry
Small Signal
•TransistorsforcommonemitterclassAoperationupto1GHz
•Devicegain>10dBwithNF<2.5dBat5,7.5,10,12,and15VDC
•Applicationsinclude:gainblocks,lownoiseampliers,and
oscillators
•Thru-holemetalcans,plasticMacro,SO-8,SOT-23andSOT-143
packages
•Applicationsinclude:PAstageforhand-heldradios&lowpower
amplierdriverstage
Power Devices
General Purpose & Small Signal
38
Broadcast / TV
VHF TV Broadcast
• 50-175MHz single ended or balanced transistors for common emitter class A & AB ope
• 0.5-250W Psync with 28-32V Vcc
UHF TV Broadcast
• 50-225MHz single ended or balanced Si Bipolar transistors for common emitter class A
• 0.5-150W Psync with Vcc of 28V
Freq
(MHz)
Pout
Min
(W)
Gain
Min
(dB)
Vcc
(V)
η
Typ
(%)
Icq
(mA)
IMD
Typ
(dB)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
225 14 14 28 -- 2.5 -55 -- 1.5 M111 MS1277
225 20 825 -- 2.5 -50 -- 1.2 M130 MS1279
225 20 7.5 28 -- 3.5 -50 -- 1.2 M164 MS1280
225 100 11 28 -- 0.2 -50 -- 1.2 M168 MS1278
225 200 11 32 -- 1-50 -- 0.45 M175 SD1485
860 0.5 10 20 -- 0.22 -60 30:1 22 55FT-2 UTV005
860 110 20 -- 0.44 -60 30:1 12 55FT-2 UTV010
860 210 25 -- 0.41 -60 30:1 10 55FT-2 UTV020
860 48.5 25 -- 0.85 -60 30:1 755FT-2 UTV040
860 8 9 26.5 -- 1.7 -58 3:01 2.5 55JV-2 UTV080
860 12 8.9 26.5 -- 1.7 -52 3:01 1.6 55JT-2 UTV120
860 20 8.5 26.5 -- 2.7 -48 3:01 1.2 55JV-2 UTV200
860 100 8.5 28 55 0.3 -- 5:01 0.6 55RT-2 UTV8100B
860 0.5 9.5 20 -- 0.22 -60 -- 5.5 M122 MS1502
860 110 20 -- 0.44 -60 -- 9M122 MS1512
860 28.5 25 -- 0.45 -60 -- 11 M122 MS1501
860 4 7 25 -- 0.85 -60 -- 5.5 M122 MS1581
860 14 8.5 25 -- 1.65 -45 -- 2.5 M156 MS1579
860 25 925 -- 3.2 -45 -- 1.3 M173 MS1582
860 30 7.5 24 50 0.06 -60 -- 2M142 MS1454
860 150 6.5 28 45 2x0.5 -- -- 0.55 M175 MS1533
960 0.9 9.5 24 -- 0.125 -- -- 20 M123 SD1420-01
960 30 24 M142 MS1453
BROADCAST / T V
VHF TV 174-225 MHz
Class A/AB
Common Emitt er
UHF TV 470-860 MHz
Class A
Common Emitt er
UHF TV 470-860 MHz
Class AB
Common Emitt er
UHF 860-960 MHz
Class A/AB
Common Emitt er
VHF TV Broadcast
• 50-175MHz single ended or balanced
transistors for common emitter class
A & AB operation
• 0.5-250W Psync with 28-32V Vcc
• Si Bipolar Common Base Class C operation
• All gold metalization and glass passivation for high reliability and long t
• Each device fully tested to the specification
Microwave Freq
(MHz)
Pout
Min
(W)
Pout
Max
(W)
Gain
min
(dB)
Vcc
(V)
η
Typ
(%)
Cob
(pF)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
2000 10.125 9.5 28 40 430:1 35 55BT-1 2001
2000 10.2 728 35 3.2 30:1 25 M210 MS3022
2000 30.47 8.6 28 40 530:1 15 55BT-1 2003
2000 30.5 7.8 28 35 9.5 -- 8M210 MS2003
2300 1.5 0.24 8.5 20 40 430:1 31 55BT-1 2301
2300 40.63 8.5 20 40 710:1 17 55BT-1 2304
2300 71.1 8.5 20 40 10 10:1 8.5 55BT-1 2307
Microwave Broadband Freq
(MHz)
Pout
Min
(W)
Pin
Max
(W)
Gain
min
(dB)
Vcc
(V)
η
Typ
(%)
Cob
(pF)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
1000 - 1400 61.2 728 40 6.5 10:1 955LV-1 1014-6A
1000 - 1400 12 2.5 7.3 28 40 12 30:1 4.5 55LT-1 1014-12
2200 - 2300 1.7 0.25 8.5 22 35 -- 10:1 24 55LV-1 2223-1.7
2200 - 2400 61.2 722 40 -- 10:1 855LV-1 2224-6L
2200 - 2500 3.5 0.5 8.5 24 40 710:1 17 55LV-1 2225-4L
2400 - 2470 25 4.4 7.5 24 49 -- 3:1 2.5 55AP-1 2424-25
MICROWAVE
2.0 GHz
Si Bipol ar Clas s C
Common Base
2.3 GHz
Si Bipol ar Clas s C
Common Base
1000 -1400 MHz
Si Bipol ar Clas s C
Common Base
1700-2000 MHz
Si Bipol ar Clas s C
Common Base
• Si Bipolar Common Base Class C operation
• All gold metalization and glass passivation for high reliability and long term operation
• Each device fully tested to the specification
Microwave
UHF TV Broadcast
• 50-225MHz single ended or balanced Si Bipolar
transistors for common emitter class A & AB operation
• 0.5-150W Psync with Vcc of 28V
39
Linear/Communications/Bias
• Designed for use in the biasing of high power silicon transistors
• Feature excellent thermal tracking to provide the highest performance
over the entire operating temperature range
Bias
Current
(A)
Resistance
(Ohm)
Case
Style Part
Number
0.35 155FV BYI-1
0.35 155GV BYI-1F
TO 0.35 155GU Z0-28F
0.35 155FU BYI-1Z
0.35 155LU
BIAS DEVICES
•Designedforuseinthebiasingofhighpower
silicontransistors
•Featureexcellentthermaltrackingtoprovidethe
highestperformanceovertheentireoperating
temperaturerange
Bias Devices
•ClassAdrivertransistorsforapplicationsfrom
1MHz-2.3GHzandpowerlevelsfrom0.25-20W
•Emitterbalastedtransistorsarefullytested
underbiasconditionsforlinearity,powergain,
loadmismatchtolerance
•ClassAdrivertransistorsforapplicationsfrom
1MHz-2.3GHzandpowerlevelsfrom0.25-20W
Communications Linear
Linear
• Broadband, high power class AB linear transistor
• Highest power output covering the full 500-1000MHz range
2013 Short Form Catalog - Linear
5/26/2013 1RFIS Diode-Transistor SFC May 2013 MASTER WBG May 25.xls
Si Bipolar Class A
Common Emmiter
Freq
(MHz)
Pout
Min
(W)
Pin
Max
(W)
Gain
min
(dB)
Vcc
(V)
Icq
(pF)
Cob
(pF)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
100-500 MHz 1-500 0.5 0.02 12 12.5 0.25 -30:1 33 55AZ-2 MPA201
1000 0.5 0.08 920 0.14 230:1 33 55ET-2 1A5
1000 1.5 0.2 9.5 20 0.22 3.8 30:1 29 55FT-2 10A015
1000 30.5 920 0.44 7.3 6:1 12.5 55FT-2 10A030
1000 60.95 8.5 20 0.88 10.8 10:1 8.3 55FT-2 10A060
1000 50.5 10 20 116 30:1 755CT-2 10AM05
1000 20 3 8 20 2.8 40 30:1 1.5 55AT-2 10AM20
2000 0.11 0.012 918 0.05 2.5 20:1 45 M210 MSC80064
2000 0.5 0.1 720 0.14 230:1 33 55ET-2 2A5
2000 0.8 0.15 720 0.18 26:01 33 55EU-2 2A8
2000 10.2 718 0.22 515:1 17 M210 MS3011
2300 0.3 0.03 10 15 0.1 2.5 9:1 45 55BT-2 23A003
2300 0.5 0.07 9.5 20 0.12 2.4 6:1 35 55BT-2 23A005
2300 0.8 0.14 9.5 20 0.14 310:1 35 55BT-2 23A008
2300 1.7 0.34 7.6 20 0.27 4.8 6:1 16 55BT-2 23A017
2300 2.5 0.6 6.5 20 0.42 6.5 10:1 11 55BT-2 23A025
2300 10.16 10 15 0.2 3.4 30:1 30 55BT-2 80143
• Broadband, high power class AB linear transistor
• Highest power output covering the full 500-1000MHz range
Si Bipolar Class AB
Common Emitter
Freq
(MHz)
Pout
Min
(W)
Pin
Max
(W)
Gain
min
(dB)
Vcc
(V)
Icq
(pF)
η
Typ
(%)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
500-1000 MHz 1000 50 10 728 0.1 50 30:1 1.4 55AV-2 0510-50A
500-1000MHz
500-1000 MHz
Internal Pre-match
2.0-2.3 GHz, Class A, Common Emitter -
(Operational from DC t o 2.3 GHz)
1.0-2.0 GHz
(Operational from DC t o 2.0 GHz)
COMMUNICATIONS LINEAR
2013 Short Form Catalog - Linear
5/26/2013 1RFIS Diode-Transistor SFC May 2013 MASTER WBG May 25.xls
Si Bipolar Class A
Common Emmiter
Freq
(MHz)
Pout
Min
(W)
Pin
Max
(W)
Gain
min
(dB)
Vcc
(V)
Icq
(pF)
Cob
(pF)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
100-500 MHz 1-500 0.5 0.02 12 12.5 0.25 -30:1 33 55AZ-2 MPA201
1000 0.5 0.08 920 0.14 230:1 33 55ET-2 1A5
1000 1.5 0.2 9.5 20 0.22 3.8 30:1 29 55FT-2 10A015
1000 30.5 920 0.44 7.3 6:1 12.5 55FT-2 10A030
1000 60.95 8.5 20 0.88 10.8 10:1 8.3 55FT-2 10A060
1000 50.5 10 20 116 30:1 755CT-2 10AM05
1000 20 3 8 20 2.8 40 30:1 1.5 55AT-2 10AM20
2000 0.11 0.012 918 0.05 2.5 20:1 45 M210 MSC80064
2000 0.5 0.1 720 0.14 230:1 33 55ET-2 2A5
2000 0.8 0.15 720 0.18 26:01 33 55EU-2 2A8
2000 10.2 718 0.22 515:1 17 M210 MS3011
2300 0.3 0.03 10 15 0.1 2.5 9:1 45 55BT-2 23A003
2300 0.5 0.07 9.5 20 0.12 2.4 6:1 35 55BT-2 23A005
2300 0.8 0.14 9.5 20 0.14 310:1 35 55BT-2 23A008
2300 1.7 0.34 7.6 20 0.27 4.8 6:1 16 55BT-2 23A017
2300 2.5 0.6 6.5 20 0.42 6.5 10:1 11 55BT-2 23A025
2300 10.16 10 15 0.2 3.4 30:1 30 55BT-2 80143
• Broadband, high power class AB linear transistor
• Highest power output covering the full 500-1000MHz range
Si Bipolar Class AB
Common Emitter
Freq
(MHz)
Pout
Min
(W)
Pin
Max
(W)
Gain
min
(dB)
Vcc
(V)
Icq
(pF)
η
Typ
(%)
VSWR
Load θjc
(°C/W)
Case
Style Part
Number
500-1000 MHz 1000 50 10 728 0.1 50 30:1 1.4 55AV-2 0510-50A
500-1000MHz
500-1000 MHz
Internal Pre-match
2.0-2.3 GHz, Class A, Common Emitter -
(Operational from DC t o 2.3 GHz)
1.0-2.0 GHz
(Operational from DC t o 2.0 GHz)
COMMUNICATIONS LINEAR
40
55AP 55AR 55AT 55AV 55AW
55AY 55AZ 55BT 55CT
55ET 55FT 55FU 55FW 55HT
55HV 55HW 55HX 55JT 55JU
55JV 55KT 55KS 55KV 55LT
55LU 55LV 55QM 55QX 55QZ
55RT 55SM 55ST 55SW 55TU
55CX
Case Styles
• Broadband, high power class AB linear transistor
• Highest power output covering the full 500-1000MHz range
41
Case Styles
M102 M103 M105 M106 M111
M112 M113 M115 M122 M123
M130 M135 M138 M142 M156
M164 M168 M173 M174 M175
M177 M198 M208 M210 M214
M216 M218 M220 M222 Macro T
Macro X Power Macro
TO-247 TO-39 TO-72SO-8
42
Notes
43
©2013 Microsemi Corporation. All rights reserved. Microsemi and the Microsemi logo are trademarks of Microsemi Corporation. All other trademarks
and service marks are the property of their respective owners.
MS4-009-13
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One Enterprise, Aliso Viejo, CA 92656 USA
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solutions for communications, defense & security, aerospace and industrial markets. Products include
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+1.978.442.5600
+1.978.937.3748
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Microsemi Corporation
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+1.408.986.8120
www.microsemi.com
email: sales.support@microsemi.com
44
