LG | HEWLETT PACKARD Features 24.0 dBm typical P; ap at 1.0 GHz 5.5 dB typical G: ap at 1.0 GHz High Gain-Bandwidth Product: 5.5 GHz typical fr Hermetic, Metal Package Description The AT-01672 is a high performance NPN silicon bipolar tran- sistor housed in a hermetic high reliability metal package. This device is designed for use in medium power amplifier applica- tions operating over VHF, UHF and microwave frequencies. Excellent device uniformity, performance and reliability are pro- duced by the use of ion-implantation, self-alignment tech- niques, and gold metallization in the fabrication of these devices. AT-01672 Up to 1 GHz General Purpose Silicon Bipolar Transistor TO-72 Package Notes: {unless otherwise specified) 1. Dimensions are ay 2. Tolerances In .xxx = *.005 mm .xx= #.13 2038 INSERTION POWER GAIN, MAXIMUM AVAILABLE Qi 96 GAIN AND MAXIMUM STABLE GAIN vs. FREQUENCY Vcoe=8 V, ic =35 mA 8 8 0 0.1 0.2 03 04 05 10 Frequency, GHz Electrical Specifications, Ta = 25C Symbol Parameters and Test Conditions Units Min. Typ. Max. ISa1el? Insertion Power Gain: VcE = 8 V, Ic = 35 mA f =0.5 GHz dB 13.0 14.5 f= 1.0 GHz 9.0 P1aB Power Output @ 1 dB Gain Compression: f= 1.0 GHz dBm 24.0 VcE = 8 V, Ic = 60 mA Gi dB 1 dB Compressed Gain: VCE = 8 V, ic = 60 MA f= 1.0 GHz dB 5.5 NFo Optimum Noise Figure: VCE = 8 V, Ic = 35 mA f=0.5 GHz dB 2.0 f=1.0 GHz 3.0 GA Gain @ NFo: VcE=8 V, Ic = 35 mA f=0.5 GHz dB 10.5 f= 1.0 GHz 6.5 fT Gain Bandwidth Product: VcE = 8 V, Ic = 10 mA GHz 5.5 hFE Forward Current Transfer Ratio: Vce = 8 V, Ic = 35 mA 30 150 300 IcBO Collector Cutoff Current: VcB = 8 V pA 0.2 lEBO Emitter Cutoff Current: VEB = 1 V LA 2.0 Ccs Collector Base Capacitance: VcB = 8 V, f = 1 MHz pF 1.0 Note: 1. For this test, the emitter is grounded. 6-31AT-01672 General Purpose Silicon Bipolar Transistor Absolute Maximum Ratings Typical Performance, Ta = 25C Absolute (uniess otherwise noted) Parameter Symbol Maximum! Emitter-Base Voltage VEBO 15V Coliector-Base Voltage VcBo 20V Collector-Emitter Voltage VcEO 12V INSERTION POWER GAIN va, COLLE ARENT AND FREQUENCY Collector Current Ic 150 mA Vee = 8V Power Dissipation?? PT 1000 mW Junction Temperature Tj 200C Storage Temperature TSTG 65 to 200C g g | Thermal Resistance?+: jc = 190C/W | $ Notes: wu 1. Operation of this device above any one of these parameters e may use permanent damage. 2. TCASE = 25C. . Derate at 5.3 mW/C for Tc > 10C. 4. The small spot size of this technique results in a higher, though more accurate determination of Ojc than do alternate methods. See MEASUREMENTS section Thermal Resistance for more information. wo NOISE FIGURE AND ASSOCIATED GAIN INSERTION POWER GAIN vs. FREQUENCY vs. COLLECTOR CURRENT AND COLLECTOR VOLTAGE VcE = BV, Ic = 35 mA f= 1.0 GHz ~ a ou o cg o 3 g w 2 2 z 1 0 0.1 02 03 04 05 1.0 Frequency, GHz Typical Scattering Parameters: Common Emitter, Zo = 50 QO Ta = 25C, VceE =8 V, lc =35 mA Freq. _ Sn es ; Siz __ S22 GHz Mag Ang dB Mag Ang ab Mag Ang Mag Ang 0.1 33 81 26.7 21.73 114 30.2 031 72 51 -36 0.2 22 -112 21.8 12.28 98 -26.0 -050 75 36 -36 0.3 19 -134 18.7 8.61 92 22.8 .072 74 30 -37 0.4 18 -148 16.4 6.58 83 -21.0 .090 72 .26 34 0.5 A7 -159 14.6 5.36 79 -19.1 111 70 22 -33 0.6 17 -171 13.1 4.51 77 -17.5 133 71 21 -38 0.7 7 178 12.0 3.97 72 -16.2 -154 68 19 45 0.8 18 171 14.1 3.61 68 -15.3 172 66 18 -53 0.9 18 169 9.9 3.12 65 -14.3 -192 66 .20 -58 1.0 19 164 9.2 2.89 61 -13.5 212 63 22 -60 Ta = 25C, Vce = 8 V, Ic = 60 MA 0.1 30 -92 26.7 21.60 110 30.4 .030 73 A7 -35 0.2 22 125 21.5 11.92 96 -26.2 .049 76 33 -35 0.3 21 -145 18.4 8.29 90 23.0 .070 75 .28 -34 0.4 20 159 16.1 6.35 82 -21.0 .089 72 26 ~31 0.5 .19 -169 14.2 5.16 77 -19.3 109 70 23 -31 0.6 20 -178 12.8 4.34 76 -17.7 131 72 21 -37 0.7 .20 173 11.6 3.81 71 -16.4 152 68 19 -43 0.8 21 167 10.8 3.47 67 -15.4 -170 66 19 -51 0.9 21 165 9.5 2.99 64 -14.5 189 67 21 -8 1.0 22 160 8.9 2.78 60 -13.6 -208 64 .23 -60 A model for this device is available in the DEVICE MODELS section. 6-32