TYPE TIP3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR FOR POWER AMPLIFIER AND HIGH-SPEED SWITCHING APPLICATIONS PLASTIC-CASE REPLACEMENT FOR 2N3055 @ 90 Watts at 25C Case Temperature e 15 A Rated Collector Current mechanical data THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE MOUNTING TAB MECHANICAL (NTERCHANGEARILITY OF T13066 PLABTIC PACKAGE HTH TO-2 OUTLINE sarosrenarne FL ae wowed [dit oreo The alm he oa eo I osu ensce an igo 7 = <4 Oe wa te nd a1 PAP ALL DIMENSIONS ARE IN INCHES absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Base Voltage . ee ee . 100 V Collector-Emitter Voltage (See Note 1) ee ee ee 6 70V Emitter-Base Voltage tee 7V Continuous Collector Current 15A Continuous Base Current : ~.. TA Safe Operating Region at (or below) 25 C Case Temperature See Figure 5 Continuous Device Dissipation at (or below) 25C Case Temperature (See Note 2) . 90 W Continuous Device Dissipation at (or below) 28 c Free- Air Temperature (See Note 3) os : . 35W Unclamped Inductive Load Energy (See Note 4) 62.5 mJ Operating Collector Junction Temperature Range Storage Temperature Range Lead Temperature 1/8 Inch from Case For 10 Seconds | NOTES: . This value applies wher the base-emitter resistance Age = 100 92. ~65C to 150C 65C to 150C 260C 1 2. Derate Iinearty to 150C case temperature at the rate of 0.72 wc. 3. Derate linearty to 150C free-alr temperature at the rate of 28 mw/c. 4, This rating Js based on the capability of the transistor to operate safely In the circult of Figure 2, L = 20 mH, Agg2 = 100 %2, Vaa2* 0 V, Rs = 0.1 9,Vec = 10 V. Energy * I2L/2. TEXAS INSTRUMENTS 2-279TYPE TIP3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR electrical characteristics at 25C case temperature PARAMETER . . _TEST CONDITIONS MIN MAX [UNIT VIBRICEOQ Collector-Emitter Breakdown Voltage lc 30mA, tg = 0, See Note 5 60 Vv IcER Collector Cutoff Current Vce = 70V. Ree = 100 82 1] mA IcEO Collactor Cutaff Current Vce-30V,) Ig=0 0.7 |} mA '\cEv Collector Cutoff Current Vce = 100V, Vege =-1:5V 5 | mA 'eBO Emitter Cutoff Current Vepr7y, Ic 20 5 | mA . Voce =4V. Ic =4A, See Notes and 6 20 70 hee Static Forward Current Transfer Ratio Vce =4V, Iq = 104, See Notes 5 and 6 5 VBE Base-Emitter Voltage VcE=4V, Icon 4A, See Notes 5 and 6 18 | V tp =400mMA, Ic=4A, See Notes 5 and 6 11 VceEisat) Collector-Emitter Saturation Voltage B c Vv Ip=3.3A, I@=10A, See Notes 5 and 6 3 Small-Signat Common-E mitter hte ; Vee=4V, Iota, f=1kHz 15 Forward Current Transfer Ratio Smalt-Signal Common-Emitter Forward Current thte ; Vce=4V, Ic=1A, See Note 7 10 kHz Transfer Ratio Cutoff Frequency NOTES: 5, These parameters must be measured using pulse techniques. ty, = 300 ys, duty cycle < 2%, a . These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts, 7. fhte is the frequency at which the magnitude of the small-signal forward current transfer ratio is 0.707 of its low-frequency value, For this device, the reference measurement is made at 1 KHz. thermal characteristics PARAMETER MAX UNIT RgJc Junction-to-Case Thermal Resistance 1.39 CW Rasa Junction-to-Free-Air Thermal Resistance 35.7 switching characteristics at 25C case temperature PARAMETER TEST CONDITIONST TYP UNIT Ton Turn-On Time Ic =6A, Ip(1) = 0.6 A, Ip(2) = -0.6 A, 0.6 us totf Turn-Off Time VBE(off) = 4V. RL=52, See Figure 1 1 t Voltage and current values shown are nominai; exact values vary slightly with transistor parameters, 2-280 TEXAS INSTRUMENTSTYPE TIP3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION F@ input MONITOR a.) XS OUTPUT 1914 MONITOR Apar> 102 TUT Gay ay e-) Kes 8617 TAT OS 2N5385 Von iN914 1N914_ INDIA INPUT + AL TSH Ry 2100 ~ 270 pF B62 . 1 1% oe i- we ourPuT ! v Vag2=4 = 90%. LD) vom ae 1+, = Veo 30v + - Veer = 16V ADJUST FOR T- Von = -14V AT INPUT MONITOR as TEST CIRCUIT VOLTAGE WAVEFORMS NOTES: A. Vgen is a 30-V pulse (from 0 V) into a 50-2 termination, B. The Vgen waveform is supplied by a generator with the following characteristics: tp < 15 ns, tp < 15 ns, Zou, * 50 22, ty = 20 us, duty cycle < 2%, a O. Resistors must be noninductive types. m . Waveforms are monitored on an oscilloscope with the following characteristics: ty < 15 ns, Ain > 10. MQ, Cin < 11.5 pF. . The d-c power supplies may require additional bypassing in order to mintmize ringing. FIGURE 1 INDUCTIVE LOAD SWITCHING Vcg MONITOR ut (See Note A} 205385 Reet 502 200 2 INPUT (See Note Al Reg2~ 1002 50 Vep2=0 + R= 018 Vear* 10v = TEST CIRCUIT ty = Bme (See Note 8) 0 { INPUT VOLTAGE -5V { T 100ms o 25A 4 COLLECTOR CURRENT = | 0 1 ICMONITOR VipnycER] - ' COLLECTOR VOLTAGE | ( 1 VOLTAGE AND CURRENT WAVEFORMS NOTES: A, L1 and L2 are 10 mH, 0.11 2, Chicago Standard Transformer Corporstion C-2688, or equivalent. 8, Input pulse width is increased until ign = 2.5 A. FIGURE 2 TEXAS INSTRUMENTS 2-281TYPE TIP3055 N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTOR TYPICAL CHARACTERISTICS STATIC FORWARD CURRENT TRANSFER RATIO vs COLLECTOR CURRENT 1000 700 400 Notes 5 and 200 70 40 20 hee Static Forward Current Ratio 0.01 004 0.1 0.4 1 4 10 ICollector CurrentA FIGURE 3 5. These parameters must be measured using pulse techniques. ty, = 300 us, duty cycle < 2%, 6. These parameters ara measured with voltage- sensing contacts separate from the current- carrying contacts, NOTES: THERMAL INFORMATION DISSIPATION DERATING CURVE Py7Maximum Continuous Device DissipationW 0 25 50 75 100 125 150 TcCase Temperatu reC FIGURE 4 MAXIMUM SAFE OPERATING REGION 100 70 40 20 See Note 8 ty = 300 us, d = 0.1 = 10% tw = Ims, d= 0,1 = 10% ty = 10 ms, d = 0.1 = 10% !eCollector CurrentA > 4 }D-C 0.7 0.4 0.2 RA Te < 25C 4 7 10 20 40 70 100 VcEColector-Emitter VoltageV FIGURE 5 NOTE 8: This combination of maximum voltage and current may be achieved only when switching from saturation to cutoff with a clamped inductive joad. 2-282 TEXAS INSTRUMENTS Tt cannot assume ony responsibility for any circyits shown or represent thot they ore free from patent infringement. TEXAS INSTRUMENTS RESERVES THE RIGHT TO MAKE CHANGES AT ANY TI. (N ORDER TO IMPROVE DESIGN AND TO SUPPLY THE BEST PRODUCT POSSIB3-6 Prot @ Typ To = 25 9C VCEO \cp hFE @ Ic type (100 C) min max min max NPN PNP Ww A A TIP 35B TIP 368 30 80 25 25 100 1,5 TIP 35 C TIP 36 90 7100 25 25 100 15 TIP 41 TIP 42 65 40 6 15 75 3 TIP41A TIP 424 65 60 6 15 75 3 TIP 41B TIP 42B 65 80 6 15 75 3 TIP 416 TIP 42C 65 100 6 15 75 3 TIP 3055 TIP 5530 90 70 15 20 4 BD 633 BD 634 30 45 2 25 1 BD 635 BD 636 30 60 2 25 1 BD 637 BD 638 30 80 2 25 1 BD 733 BD 734 40 32 4 50 2 BD 735 BD 736 40 32 4 50 2 BD 737 BD738 40 45 4 40 2 TIP 110 TIP 115 50 60 2 1000 1 TIP 1141 TIP 116 50 80 2 1000 1 TIP 112 TIP 117 50 100 2 1000 1 TIP 120 TIP 125 65 60 5 1000 3 TIP 121 TIP 126 65 80 5 1000 3 TIP 122 TIP 127 65 100 5 1000 3 TIP 140 TIP 145 125 60 10 1000 5 TIP 141 TIP 146 125 80 10 1000 5 TIP 142 TIP 147 125 100 10 1000 5 Prot @ Typ Ta = 25C To = 25 9C VCEO Icb hee @ le type (100 C} (100 C} min max min max Ww Ww Vv A A 2N 4915 4 87,5 80 5 25 100 2,5 2N 4998 2 (20) 80 2 30 90 1 2N 5000 2 (20) 80 2 70 200 1 2N 5002 (33,3) 80 5 30 90 2,5 2N 5004 (33,3) 80 5 70 200 2,5 2N 5038 5 140 90 20 20 100 12 2N 5039 5 140 76 20 20 100 10 2N 6148 1 (4) 80 2 30 30 1 2N 5150 1 (4) 80 2 70 200 1 2N 5152 (6,7) 80 2 30 90 2,5 2N 5154 (6,7) 80 2 70 200 25 2N 5301 5 200 40 20 40 60 1 2N 5302 5 200 60 20 40 60 1 2N 5303 5 200 80 20 40 60 1 TEXAS INSTRUMENTSfT Ices @ VcE Gehause Anwendungen min (IcEQ) package applications, remarks MHz BA Vv 3 700 80 TO-3P Verstarker, Schalter, komplementar zu TIP 36 B amplifier, switch, complementary to TIP 36 B 3 700 100 TO-66P Verstarker, Schalter, komplementar zu TIP 36 C amplifier, switch, complementary to TIP 36 C 3 400 40 TO-66P Verstarker, Schalter, komplementar zu TIP 42 amplifier, switch, complementary to TIP 42 3 400 60 TO-66P Verstarker, Schalter, komplementar zu TIP 42 A amplifier, switch, complementary to TIP 42 A 3 400 80 TO-66P Verstarker, Schalter, komplementar zu TIP 42 B amplifier, switch, complementary to TIP 42 B 3 400 100 TO-66P Verstarker, Schalter, komplementar zu TIP 42 C amplifier, switch, complementary to TIP 42 C TO-3P TO-66 Kompiementar TO-66 Endstufen TO-66 for complementary output stages TO-66 TO-66 TO-66 TO-66P TO-66P Darlington TO-66P TO-66P Verstarker, Schalter . TO-66P amplifier, switch Darlington TO-66P TO-3P TO-3P Darlington TO-3P fT ICES @ VE Gehause Anwendungen, Bemerkungen min (IcEO) package applications, remarks MHz HA v 4 (1000) 80 TO-3 Verstarker, Schalter amplifier, switch 50 (0,05) 40 TO-59 Fir Computeranwendung 60 (0,05) 40 TO-59 komplementar zu 2N 4999, 2N 5001, 2N 5003, 2N 5005 60 (0,05) 40 TO-59 computer application 70 (0,05) 40 TO-59 complementary to 2N 4999, 2N 5001, 2N 5003, 2N 5005 60 50 140 TO-3 Verstarker und schnelle Schalter 60 50 110 TO-3 amplifier and high-speed switch 50 (0,05) 40 TO-39 Fur Computeranwendung 60 (0,05) 40 TO-39 komplementar zu 2N 5147, 2N 5149, 2N 5151, 2N 5153 60 (0,05) 40 TO-39 computer application 70 (0,05) 40 TO-39 complementary to 2N 5147, 2N 5149, 2N 5151, 2N 5153 4 (5) 40 TO-3 Verstarker, Schalter 4 (5) 60 TO-3 amplifier, switch 4 (5) 80 TO-3 TEXAS INSTRUMENTS 37