PD - 94310 Advanced Process Technology Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description IRF634N IRF634NS IRF634NL l HEXFET(R) Power MOSFET l D RDS(on) = 0.435 G Fifth Generation HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF634NL) is available for lowprofile application. VDSS = 250V ID = 8.0A S TO-220AB IRF634N D2Pak IRF634NS TO-262 IRF634NL Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ TSTG www.irf.com Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 8.0 5.6 32 88 3.8 0.59 20 110 4.8 8.8 7.3 -55 to +175 Units A W W/C V mJ A mJ V/ns C 300 (1.6mm from case ) 10 lbf*in (1.1N*m) 1 9/10/01 IRF634N/S/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS V(BR)DSS/TJ Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. Typ. Max. Units Conditions 250 --- --- V VGS = 0V, I D = 250A --- 0.33 --- V/C Reference to 25C, ID = 1mA --- --- 0.435 VGS = 10V, I D = 4.8A 2.0 --- 4.0 V VDS = VGS , ID = 250A 5.4 --- --- S VDS = 50V, ID = 4.8A --- --- 25 VDS = 250V, VGS = 0V A --- --- 250 VDS = 200V, VGS = 0V, T J = 150C --- --- 100 VGS = 20V nA --- --- -100 VGS = -20V --- --- 34 ID = 4.8A --- --- 6.5 nC VDS = 200V --- --- 16 VGS = 10V, See Fig. 6 and 13 --- 8.4 --- VDD = 125V --- 16 --- ID = 4.8A ns --- 28 --- RG = 1.3 --- 15 --- VGS = 10V, See Fig. 10 D Between lead, 4.5 --- --- 6mm (0.25in.) nH G from package --- 7.5 --- and center of die contact S --- 620 --- VGS = 0V --- 84 --- VDS = 25V --- 23 --- pF = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol --- --- 8.0 showing the A G integral reverse --- --- 32 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 4.8A, VGS = 0V --- 130 200 ns TJ = 25C, I F = 4.8A --- 650 980 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Thermal Resistance RJC RCS RJA RJA 2 Parameter Typ. Max. Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient (PCB mount) --- 0.50 --- --- 1.7 --- 62 40 Units C/W www.irf.com IRF634N/S/L 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 4.5V 0.1 20s PULSE WIDTH TJ = 25 C 0.01 0.1 1 10 10 4.5V 1 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 C 1 TJ = 25 C V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 VGS , Gate-to-Source Voltage (V) 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 4.0 20s PULSE WIDTH TJ = 175 C 0.1 0.1 100 VDS , Drain-to-Source Voltage (V) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 9.0 ID = 7.9A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRF634N/S/L VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 1000 C, Capacitance(pF) Coss = Cds + Cgd Ciss 800 600 Coss 400 Crss 200 VGS , Gate-to-Source Voltage (V) 20 1200 10 100 VDS = 200V VDS = 125V VDS = 50V 16 12 8 4 0 1 ID = 4.8A FOR TEST CIRCUIT SEE FIGURE 13 0 1000 0 10 VDS , Drain-to-Source Voltage (V) 100 10 TJ = 175 C 1 TJ = 25 C V GS = 0 V 0.4 0.6 0.8 1.0 Fig 7. Typical Source-Drain Diode Forward Voltage 4 ID , Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 100 VSD ,Source-to-Drain Voltage (V) 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 0.1 0.2 20 QG , Total Gate Charge (nC) OPERATION IN THIS AREA LIMITED BY R DS (on) 10 100sec 1 1msec Tc = 25C Tj = 175C Single Pulse 0.1 1.2 1 10msec 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRF634N/S/L 10.0 VDS VGS I D , Drain Current (A) 8.0 RD D.U.T. RG + -VDD 6.0 10V Pulse Width 1 s Duty Factor 0.1 % 4.0 Fig 10a. Switching Time Test Circuit 2.0 VDS 90% 0.0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRF634N/S/L 200 D R IV E R L VDS D .U .T RG + - VD D IA S 2V0GS V A 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 160 BOTTOM ID 2.0A 3.4A 4.8A 120 80 40 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50K 12V .2F .3F QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRF634N/S/L Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + * * * * RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET(R) Power MOSFETs www.irf.com 7 IRF634N/S/L TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) -B - 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -A - 1 .3 2 (.05 2 ) 1 .2 2 (.04 8 ) 6 .4 7 (.2 5 5 ) 6 .1 0 (.2 4 0 ) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU R CE 4 - D R A IN 3 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 1 .4 0 (.0 5 5 ) 3X 1 .1 5 (.0 4 5 ) 0 .93 (.0 3 7 ) 0 .69 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 0.5 5 (.0 2 2 ) 0.4 6 (.0 1 8 ) 2 .9 2 (.11 5 ) 2 .6 4 (.10 4 ) 2 .5 4 (.1 0 0 ) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information EXAMPLE: T HIS IS AN IRF1010 LOT CODE 1789 ASS EMBLED ON WW 19, 1997 IN T HE ASSEMBLY LINE "C" INT ERNATIONAL RECT IFIER LOGO ASS EMBLY LOT CODE 8 PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com IRF634N/S/L D2Pak Package Outline D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE AS S EMBLY LINE "L" INT ERNATIONAL RECT IFIER LOGO AS S EMBLY LOT CODE www.irf.com PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L 9 IRF634N/S/L TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN T HE ASS EMBLY LINE "C" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE 10 PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com IRF634N/S/L D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 .6 5 ( .0 6 5 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. Notes: 6 0.0 0 (2.36 2) M IN . N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E. Repetitive rating; pulse width limited by max. junction temperature. 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 Pulse width 400s; duty cycle 2%. This is only applied to TO-220A package Starting TJ = 25C, L = 9.5mH RG = 25, IAS = 4.8A,VGS=10V This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject to change without notice. This product has been designed and qualified for the Automotive [Q101] (IRF634N), Industrial (IRF634NS and IRF634NL) market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 9/00 www.irf.com 11