Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 8.0
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.6 A
IDM Pulsed Drain Current 32
PD @TC = 25°C Power Dissipation 88 W
PD @TA = 25°C Power Dissipation3.8
Linear Derating Factor 0.59 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy110 mJ
IAR Avalanche Current4.8 A
EAR Repetitive Avalanche Energy8.8 mJ
dv/dt Peak Diode Recovery dv/dt 7.3 V/ns
TJOperating Junction and -55 to +175
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew10 lbf•in (1.1N•m)
HEXFET® Power MOSFET
9/10/01
Absolute Maximum Ratings
Description
VDSS = 250V
RDS(on) = 0.435Ω
ID = 8.0A
S
D
G
lAdvanced Process Technology
lDynamic dv/dt Rating
l175°C Operating Temperature
lFast Switching
lFully Avalanche Rated
lEase of Paralleling
lSimple Drive Requirements
D2Pak
IRF634NS
TO-220AB
IRF634N TO-262
IRF634NL
IRF634N
IRF634NS
IRF634NL
Fifth Generation HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for high
current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRF634NL) is available for low-
profile application.
www.irf.com 1
PD - 94310
IRF634N/S/L
2www.irf.com
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.8A, VGS = 0V
trr Reverse Recovery Time ––– 130 2 00 ns TJ = 25°C, IF = 4.8A
Qrr Reverse Recovery Charge ––– 650 9 80 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
8.0
32 A
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 25 0 –– – ––– V VGS = 0V, I D = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.33 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.435 ΩVGS = 10V, ID = 4.8A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 5.4 ––– ––– S VDS = 50V, ID = 4.8A
––– ––– 25 µA VDS = 250V, VGS = 0V
––– ––– 250 VDS = 200V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
QgTotal Gate Charge ––– ––– 34 ID = 4.8A
Qgs Gate-to-Source Charge ––– ––– 6.5 nC VDS = 200V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 16 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 8.4 ––– VDD = 125V
trRise Time ––– 16 ––– ID = 4.8A
td(off) Turn-Off Delay Time ––– 28 ––– RG = 1.3Ω
tfFall Time ––– 15 ––– VGS = 10V, See Fig. 10
Between lead,
––– ––– 6mm (0.25in.)
from package
and center of die contact
Ciss Input Capacitance ––– 620 ––– VGS = 0V
Coss Output Capacitance ––– 84 ––– VDS = 25V
Crss Reverse Transfer Capacitance –– – 23 ––– pF ƒ = 1.0MHz, See Fig. 5
nH
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
LDInternal Drain Inductance
LSInternal Source Inductance ––– –––
S
D
G
IGSS
ns
4.5
7.5
IDSS Drain-to-Source Leakage Current
Thermal Resistance Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.7
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient––– 62
RθJA Junction-to-Ambient (PCB mount)––– 40
IRF634N/S/L
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
0.01
0.1
1
10
100
0.1 1 10 100
20
µ
s PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
0.1 1 10 100
20µs PULSE WIDTH
T = 175 C
J°
TOP
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
V , Drain-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
DS
D
4.5V
0.1
1
10
100
4.0 5.0 6.0 7.0 8.0 9.0
V = 50V
20µs PULSE WIDTH
DS
V , Gate-to-Source Volta
g
e (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 175 C
J°
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
7.9A
IRF634N/S/L
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2
V ,Source-to-Drain Volta
g
e (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 175 C
J°
110 100 1000
VDS, Drain-to-Source Voltage (V)
0
200
400
600
800
1000
1200
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
0 10 20 30 40
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
FOR TEST CIRCUIT
SEE FIGURE
I =
D
13
4.8A
V = 50V
DS
V = 125V
DS
V = 200V
DS
1 10 100 1000
VDS , Drain-toSource Voltage (V)
0.1
1
10
100
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
IRF634N/S/L
www.irf.com 5
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RGD.U.T.
10V
+
-
VDD
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9. Maximum Drain Current Vs.
Case Temperature
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
1 2
JDM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJC
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
25 50 75 100 125 150 175
0.0
2.0
4.0
6.0
8.0
10.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
IRF634N/S/L
6www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T. V
DS
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
10 V
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
Fig 12a. Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
25 50 75 100 125 150 175
0
40
80
120
160
200
Starting T , Junction Temperature ( C)
E , Single Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
2.0A
3.4A
4.8A
RG
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-VDD
DRIVER
A
15V
20V
VGS
IRF634N/S/L
www.irf.com 7
P.W. Period
di/dt
Diode Recovery
dv/dt
Ripple ≤5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D = P.W.
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET® Power MOSFETs
* VGS = 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
RGVDD
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
D.U.T Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
*
IRF634N/S/L
8www.irf.com
LEAD ASSIGNMENTS
1 - GATE
2 - DRAIN
3 - SOURCE
4 - DRAIN
- B -
1 .32 (.05 2)
1 .22 (.04 8)
3X 0.55 (.022)
0.46 (.018)
2 .92 (.11 5)
2 .64 (.10 4)
4.69 (.185)
4.20 (.165)
3X 0 .93 (.03 7)
0 .69 (.02 7)
4 .06 (.16 0)
3 .55 (.14 0)
1.15 (.045)
MIN
6.47 (.255 )
6.10 (.240 )
3.78 (.14 9)
3.54 (.13 9)
- A -
10.54 (.415)
10.29 (.405)
2.87 (.113)
2.62 (.103)
15.24 (.600 )
14.84 (.584 )
1 4.09 (.5 55)
1 3.47 (.5 30)
3X 1.40 (.055)
1.15 (.045)
2.54 (.100)
2X
0 .3 6 ( .0 1 4 ) M B A M
4
1 2 3
NOTES:
1 DIMENSIONIN G & T OL ERANCING PER ANSI Y1 4 .5 M, 1 98 2 . 3 OUT L IN E CONF ORMS T O J EDE C OUTL INE T O-22 0 AB.
2 CONT ROL L IN G DIMENSION : IN CH 4 HEATSINK & L EA D MEASUREMENT S DO N OT INCLUDE BURRS.
TO-220AB Part Marking Information
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
EXAMPLE: THIS IS AN IRF1010
LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
INTERNATIONAL
RECTIFIER
LOGO
AS S E MB LY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
IRF634N/S/L
www.irf.com 9
D2Pak Package Outline
D2Pak Part Marking Information
F530S
THIS IS AN IRF53 0S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 20 00
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
DATE CODE
Y EAR 0 = 2000
WEEK 02
LINE L
IRF634N/S/L
10 www.irf.com
TO-262 Par t Mar king Information
TO-262 Package Outline
EXAMPLE: THIS IS AN I RL3103L
LOT CODE 1789
AS S E MB LY
PART N UMBER
DAT E CODE
WEEK 19
LINE C
LOT CODE
YEAR 7 = 1997
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE " C" LOGO
RECTIFIER
INTERNATIONAL
IRF634N/S/L
www.irf.com 11
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 9.5mH
RG = 25Ω, IAS = 4.8A,VGS=10V
Pulse width ≤ 400µs; duty cycle ≤ 2%.
This is only applied to TO-220A package
D2Pak Tape & Reel Information
3
4
4
TRR
FEED D IRE CTION
1 .85 (.0 73)
1 .65 (.0 65)
1 .60 (.0 63)
1 .50 (.0 59)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421) 16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449) 15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532 )
12.80 (.504 )
330.00
(14.173)
MAX.
2 7.40 (1.079 )
2 3.90 (.941)
60.00 (2.362)
MIN .
30.40 (1.197)
MAX .
26 .40 (1.03 9)
24 .40 (.9 61 )
NO TES :
1. CO MFORMS TO EIA-418.
2. CO NTROLLING DIMENSIO N: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ O UTER EDGE.
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 9/00
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRF634N),
Industrial (IRF634NS and IRF634NL) market.
Qualification Standards can be found on IR’s Web site.
