1
A
A'
23
14
23
14
23
14
Pin connection
SEC. A-A'
12.0
(C1.2)
3.0±0.15
(7.6) (2.54)
(2-0.45) (2-0.45)
(2.5)
2.1±0.15
2.5 10.0
10.0 min.
Device
center
CNZ1023 Unit : mm CNA1009H
CNZ1021 CNZ1022
Unit : mm
Unit : mm Unit : mm
5.0
0.4±0.1
Pin connection
A
A'
Pin connection
SEC. A-A'
12.0 (C1.2)
3.0±0.15
(7.6) (2.54)
(2-0.45)
2.0
(2-0.45)
(2.5)
3.0
2.5 10.0
10.0 min.
Device
center
2.1±0.15
6.0
5.0
12.0±0.15
18.0
0.4±0.1
A
A'
SEC. A-A'
12.0
(C1.2)
3.0±0.15
(7.6)
0.5
3.5
(2.54)
(2-0.45) (2-0.45)
(2.5)
2.5
3.0 10.0
10.0 min.
Device
center
2-R1.5
0.5
3.5
2-R1.5
(4-R2)
(2-C1.2)
2.1±0.15
25.0
19.0±0.15
5.0
6.0
0.4±0.1
3.0
Pin connection
SEC. A-A'
(C1)
(2.54)
2.2±0.15
5.2±0.1
5.0
6.0
0.5±0.1
ø3.0
+0.15
–0
+0.15
–0
+0.15
–0
23
14
A
A'
14.0
5.0±0.15
(10.0)
6.6±0.12.35±0.1
(2-0.45)
(2.5)2.5 10.0
10.0 min.
Device
center
2-0.7
(2-0.45)
2-ø0.7±0.1
ø3.0
+0.15
–0
23
14
23
14
23
14
23
14
(Note) 1. Tolerance unless otherwise specified is ±0.3.
2. ( ) Dimension is reference.
CNZ1021,CNZ1022,CNZ1023,CNA1009H
(ON1021, ON1022, ON1023, ON1024)
Photo Interrupters
Overview
CNZ1021 series is a transmissive photosensor series
in which a high efficiency GaAs infrared light emitting
diode is used as the light emitting element, and a high
sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face
each other, and objects passing between them are
detected.
Features
Position detection accuracy : 0.25 mm
Gap width : 3 mm (CNZ1021, CNZ1022, CNZ1023)
5 mm (CNA1009H)
The type directly attached to PCB........... CNZ1021
Screw-fastened type (both sides)............. CNZ1022
Screw-fastened type (one side)................ CNZ1023
The type directly attached to PCB........ CNA1009H
(with a positioning pins)
Transmissive Photosensors (Photo Interrupters)
Note) The part numbers in the parenthesis show conventional part number.
2
Transmissive Photosensors (Photo Interrupters)
CNZ1021,CNZ1022,CNZ1023,CNA1009H
;;
;
;
(Input pulse)
(Output pulse)
50RL
td : Delay time
tr : Rise time (Time required for the collector current to increase
from 10% to 90% of its final value)
tf : Fall time (Time required for the collector current to decrease
from 90% to 10% of its initial value)
VCC
Sig.OUT 10%
90%
Sig.IN
tdtrtf
Electrical Characteristics (Ta = 25˚C)
Parameter
Symbol
Conditions min typ max Unit
Input
Forward voltage (DC) VFIF = 20mA 1.25 1.4 V
characteristics
Reverse current (DC) IRVR = 3V 10 µA
Output characteristics
Collector cutoff current ICEO VCE = 10V 10 200 nA
Transfer
Collector current IC
V
CC
= 5V, I
F
= 20mA, R
L
= 100
0.5 15 mA
characteristics
Collector to emitter saturation voltage
VCE(sat) IF = 40mA, IC = 1mA 0.4 V
Response time tr , tf*
V
CC
= 5V, I
C
= 1mA, R
L
= 100
5µs
* Switching time measurement circuit
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Symbol
Ratings Unit
Input (Light
Reverse voltage (DC) VR5V
emitting diode)
Forward current (DC) IF50 mA
Power dissipation PD*1 75 mW
Collector current IC20 mA
Output (Photo
Collector to emitter voltage
VCEO 30 V
transistor)
Emitter to collector voltage
VECO 5V
Collector power dissipation
PC*2 100 mW
Temperature
Operating ambient temperature
Topr –25 to +85 ˚C
Storage temperature T
stg
–40 to +100
˚C
*1 Input power derating ratio is 1.0 mW/˚C at Ta 25˚C.
*2 Output power derating ratio is 1.33 mW/˚C at Ta 25˚C.
3
CNZ1021,CNZ1022,CNZ1023,CNA1009H
Transmissive Photosensors (Photo Interrupters)
IF , IC — Ta
60
50
40
30
20
10
Ambient temperature Ta (˚C )
0 20406080100
0
– 25
IF — VF
60
30
20
10
50
40
Forward voltage VF (V)
Forward current I
F
(mA)
0.4 0.8 1.2 1.6 2.42.0
00
Ta = 25˚C
VF — Ta
1.6
1.2
0.8
0.4
Ambient temperature Ta (˚C )
Forward voltage V
F
(V)
0 20406080100
0
– 40 – 20
0 20406080100– 40 – 20
0 20406080100– 40 – 20
IC — IF
10
2
10
1
10
–1
Forward current I
F
(mA)
Collector current I
C
(mA)
11010
2
10
–2
10
–1
V
CE
= 5V
Ta = 25˚C
Relative output current I
C
(%)
IC — Ta
160
120
80
40
Ambient temperature Ta (˚C )
0
V
CE
= 5V
I
F
= 20mA
ICEO — Ta
10
3
1
10
2
10
–1
10
Ambient temperature Ta (˚C )
V
CE
= 10V
Dark current I
CEO
(nA)
10
–2
tr — IC
10
1
10
–1
Collector current I
C
(mA)
Rise time t
r
(µs)
11010
2
10
–2
10
–1
10
2
V
CC
= 5V
Ta = 25˚C
IC — d
100
60
40
20
80
Distance d (mm)
Relative output current I
C
(%)
12 6543
00
V
CE
= 5V
Ta = 25˚C
I
F
= 20mA
IC — VCE
10
2
10
1
10
–1
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA)
11010
2
10
–2
10
–1
Ta = 25˚C
Forward current, collector current I
F
, I
C
(mA)
I
F
I
C
10mA
1mA
I
F
= 50mA
R
L
= 1k
100
500
I
F
= 30mA
20mA
10mA
10%
90%
t
d
t
r
t
f
R
L
V
CC
Sig.
OUT
Sig.
OUT
50
Sig.IN
;
;
;
d
Criterion
0
Caution for Safety
DANGER
Please read the following notes before using the datasheets
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Gallium arsenide material (GaAs) is used
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Therefore, do not burn, destroy, cut, crush, or chemi-
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Observe the relevant laws and regulations when dispos-
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2001 MAR