Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3 1Publication Order Number:
MBR3045PT/D
MBR3045PT
Preferred Device
SWITCHMODE
Power Rectifier
These state−of−the−art devices use the Schottky Barrier principle
with a platinum barrier metal.
Features
•Dual Diode Construction; Terminals 1 and 3 may be Connected for
Parallel Operation at Full Rating
•Guard−ring for Stress Protection
•Low Forward Voltage
•175°C Operating Junction Temperature
•Pb−Free Package is Available*
Mechanical Characteristics
•Case: Epoxy, Molded
•Weight: 4.3 Grams (Approximately)
•Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MAXIMUM RATINGS
Rating Symbol Max Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
45 V
Average Rectified Forward Current
(Rated VR, TC = 105°C) Per Device
Per Diode
IF(AV) 30
15
A
Peak Repetitive Forward Current,
(Rated VR, Square W ave,
20 kHz) Per Diode
IFRM 30 A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
IFSM 200 A
Peak Repetitive Reverse Current (2.0 s,
1.0 kHz) Per Diode (See Figure 6) IRRM 2.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature (Note 1) TJ−65 to +175 °C
Peak Surge Junction Temperature
(Forward Current Applied) TJ(pk) 175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Device Package Shipping
ORDERING INFORMATION
MBR3045PT SOT−93
SOT−93
CASE 340D
PLASTIC
30 Units / Rail
2
4
1
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 45 VOLTS
Preferred devices are recommended choices for future use
and best overall value.
1
3
2
4
3
MARKING
DIAGRAM
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AYWWG
MBR3045PT
MBR3045PTG SOT−93
(Pb−Free) 30 Units / Rail
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MBR3045PT
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2
THERMAL CHARACTERISTICS (Per Diode)
Rating Symbol Max Unit
Thermal Resistance, Junction−to−Case RJC 1.4 °C/W
Thermal Resistance, Junction−to−Ambient RJA 40 °C/W
ELECTRICAL CHARACTERISTICS (Per Diode)
Instantaneous Forward Voltage (Note 2)
(iF = 20 Amps, TC = 125°C)
(iF = 30 Amps, TC = 125°C)
(iF = 30 Amps, TC = 25°C)
vF0.60
0.72
0.76
V
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TC = 125°C)
(Rated dc Voltage, TC = 25°C)
iR100
1.0
mA
2. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤2.0%.
0
vF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
10
0.1
VR, REVERSE VOLTAGE (VOLTS)
200
0.1
0.01
100.2
, INSTANTANEOUS FORWARD CURRENT (AMPS)iF
0.4 0.6
100
5.0 50
1.0
0.8 1.4
Figure 1. Typical Forward Voltage Figure 2. Typical Reverse Current
15 3025 35
50
30
20
, REVERSE CURRENT (mA)IR
100
10
1.0 1.2
1.0
5.0
3.0
2.0
0.5
0.3
0.2
TJ = 150°C25°C
40 45
TJ = 150°C
25°C
125°C
100°C
75°C
MBR3045PT
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3
7060
TC, CASE TEMPERATURE (°C)
15
10
5.0
0
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
200
20
10
5.0
0
1080
, AVERAGE FORWARD CURRENT (AMPS)IF(AV)
90 110100
20
5.0 40
15
PF(AV), AVERAGE FORWARD POWER DISSIPATION (WATTS)
120 140130
Figure 3. Current Derating (Per Leg) Figure 4. Forward Power Dissipation (Per Leg)
15 3025 35
dc
SQUARE
WAVE
(CAPACITIVELOAD)
IPK
IAV
20, 10, 5
0.10.05
VR, REVERSE VOLTAGE (VOLTS)
1000
700
600
400
300
0.2
C, CAPACITANCE (pF)
0.5 2.01.0
3000
5.0 5010
Figure 5. Capacitance
500
2000
900
800
Figure 6. Test Circuit for Repetitive Reverse
Current
2.0 s
1.0 kHz
12 V 100
VCC 12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0−10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 k
+150 V, 10 mAdc
4.0 F
+
20
SINE WAVE
RESISTIVE LOAD
TJ = 125°C
160150
dc
SQUARE
WAVE
(CAPACITIVELOAD)
IPK
IAV
20, 10, 5
IPK
IAV
(RESISTIVELOAD)
MBR3045PT
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4
PACKAGE DIMENSIONS
SOT−93 (TO−218)
PLASTIC
CASE 340D−02
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
A
D
VG
K
SL
U
BQEC
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A−−− 20.35 −−− 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L−−− 16.20 −−− 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
123
4
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MBR3045PT/D
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
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