DC9018
DISCRETE SEMICONDUCTORS
R
DC COMPONENTS CO., LTD.
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in AM/FM amplifier and local
oscillator of FM/VHF tuner.
Pinning
1 = Emitter
2 = Base
3 = Collector
Characteristic Symbol Rating Unit
Collector-Base Voltage VCBO 30 V
Collector-Emitter Voltage VCEO 15 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC50 mA
Base Current IB10 mA
Total Power Dissipation PD400 mW
Junction Temperature TJ+150 oC
Storage Temperature TSTG -55 to +150 oC
Absolute Maximum Ratings(TA=25oC)
TO-92
.022(0.56)
.014(0.36)
.050
(1.27)
.148(3.76)
.132(3.36)
Typ
.190(4.83)
.170(4.33)
.100
(2.54)Typ
.050
(1.27)Typ
.022(0.56)
.014(0.36)
.190(4.83)
.170(4.33)
.500
(12.70)Min
2oTyp
5oTyp.
2oTyp
3 2 1
5oTyp.
Dimensions in inches and (millimeters)
Characteristic Symbol Min Typ Max Unit Test Conditions
Collector-Base Breakdown Volatge BVCBO 30 - - V IC=100µA
Collector-Emitter Breakdown Voltage BVCEO 15 - - V IC=1mA
Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA
Collector Cutoff Current ICBO - - 50 nA VCB=12V
Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.5 V IC=10mA, IB=1mA
DC Current Gain(1) hFE 28 - 270 - IC=1mA, VCE=5V
Transition Frequency fT700 1100 - MHz IC=5mA, VCE=5V
Output Capacitance Cob - 1.3 1.7 pF VCB=10V, IE=0
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Rank D E F G H I J
Range 28~45 39~60 54~80 72~108 97~146 132~198 180~270
Classification of hFE
