NPN POWER DARLINGTON eaitnces 20 AMPERE gs GEOMETRY 513 * High VCEO to 450V 3 Le * High Gain Fast Switching om MAXIMUM RATINGS " [Tg t ! oes CMJ 10004, CMJ 10005, C 1002 @lc= @Tc=100C & -65C to + 200C ! s 4 ieomcins 275*C for seconds } Pulse =5.0 ms. Cycle <10% ao ELECTRICAL CHARACTERISTICS AT 25C CASE TEMPERATURE (Unless otherwise specified) CMJ40004_ enoot (10-64) c1002 PARAMETER SYMBOL TEST CONDITIONS WN, | MAX. | MAN. | MAX. | MAN. | MAX. | UNIT Collector-Emitter Vero} | IC = 250mA, Ip = 0, Vclamp = Sustaining Voltage Rated VctO 350 400 450 Vde VEX) IC =2.0A, Velamp = Rated VCeEx Te = 100C 400 450 450 Vde Ic = 410A, Velamp = Rated VCEx To = 400C 275 325 325 Vde Collector Cutoff IceV Vcev = Rated Value, VBE(Of = Current 4.5 Vde 0.25 0.25 0.25 | mAdc VcEV = Rated Vaiue, VBE(Off). Te = 150C 6.0 5.0 5.0 mAdc ICER Vt = Rated Value, RBE = 50e, Tce = 100C 50 5.0 5.0 | mAde Emitter Cutoff Current 1680 Ve8 = 2.0 Ve, IC =0 175 475 475__| mAde DC Current Gain FE Ic =5.0 Ade, VcE = 5.0 Vde 50. | 600 | 50 | 600 | 50 | 600 IC = 10 Ade, VCE = 5.0 Vde 40. | 400 | 40 | 400 | 40 | 400 Collector Emitter Vegtaty Ic = 10 Ade, IB = 400 mAde 19 19 19 | Vac Saturation Vottage Ic = 20 Ade. |B = 2.0 Adc 3.0 3.0 3.0 | Vade Ic = 10 Ade, | = 400 mAde, Tce = 100C 2.0 20 20 | Vde Base Emitter Veet Tic = 40 Adie, (B= 400 mAde 25 25 25 | Vde Saturation Voitage I = 10 Ade, Ib = 400 mAdc, To= 100C 25 25 25 | Vde Diode Forward Vattage | Vf IF= 10 Ade 5.0 5.0 5.0 | Vde Small Signal infet ic = 1.0 Ade, VCE = 10 Vae. Current Gain t test = 4.OMHz 40 10 10 Output Capacitance Cob Vea = 10 Vdc, le =0, f= 100KHz 400 | 325 F Delay Time td VGC = 250 Vdc, Ic = 10A 0.2 02 0.2 Rise Time tr {a4 = 400 mA, Vee(Off) = 5.0 Vde, 06 06 06 Fi | storage Time is mice ox 15 15 15 |p Fall Time tf 08 0.5 05 |p Storage Time tsv IC = 10A(ok), Velarmp = Rated VCEX, 2.5 25 25 Crossover Time tc la1 = 400 mf, VBE(Off} = 5.0 Vde, Te = 100C 45 15 45 Lu CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, NY.11779