Smart Low Side Power Switch HITFET BTS 117 Features Product Summary * Logic Level Input Drain source voltage VDS 60 * Input Protection (ESD) On-state resistance RDS(on) 100 m *=Thermal shutdown with latch Current limit I D(lim) 7 A * Overload protection Nominal load current I D(ISO) 3.5 A * Short circuit protection Clamping energy EAS V 1000 mJ * Overvoltage protection * Current limitation * Status feedback with external input resistor * Analog driving possible * AEC qualified * Green product (RoHS compliant) Application * All kinds of resistive, inductive and capacitive loads in switching or linear applications * C compatible power switch for 12 V and 24 V DC applications * Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS (R) chip on chip technology. Providing embedded protection functions. V bb + LOAD M D rain 2 dv /d t lim ita tio n 1 IN ESD O v erloa d pro te ctio n C u rre n t O ve rvoltag e p rotection lim ita tio n O ve rte m pe rature p ro te ctio n Sh ho rt circ c ircu it S ort uit pprotection ro te ctio n S o u rce 3 H IT F E T Datasheet 1 Rev. 1.4, 2012-07-11 Smart Low Side Power Switch HITFET BTS 117 Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Symbol Value Drain source voltage VDS 60 Drain source voltage for short circuit protection Continuous input current 1) VDS(SC) 32 V IIN -0.2V VIN 10V Unit mA no limit VIN < -0.2V or VIN > 10V | IIN | 2 Operating temperature Tj - 40 ... +150 Storage temperature Tstg - 55 ... +150 Power dissipation Ptot 50 W EAS 1000 mJ 3000 V C TC = 25 C Unclamped single pulse inductive energy ID(ISO) = 3.5 A Electrostatic discharge voltage (Human Body Model) VESD according to MIL STD 883D, method 3015.7 and EOS/ESD assn. standard S5.1 - 1993 Load dump protection VLoadDump2) = VA + VS VLD VIN=low or high; VA =13.5 V td = 400 ms, RI = 2 , ID =0,5*3.5A td = 400 ms, RI = 2 , ID = 3.5A 75 70 Thermal resistance junction - case: R thJC 2.5 junction - ambient: R thJA 75 SMD version, device on PCB: 3) R thJA 45 K/W 1In case of thermal shutdown a minimum sensor holding current of 500 A has to be guaranteed (see also page 3). 2V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 3 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70m thick) copper area for Drain connection. PCB mounted vertical without blown air. Datasheet 2 Rev. 1.4, 2012-07-11 Smart Low Side Power Switch HITFET BTS 117 Electrical Characteristics Symbol Parameter at Tj=25C, unless otherwise specified Values Unit min. typ. max. 60 - 73 - - 5 1.3 1.7 2.2 V A Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150C, ID = 10 mA Off state drain current IDSS VDS = 32 V, Tj = -40...+150 C, VIN = 0 V Input threshold voltage VIN(th) V A ID = 0.7 mA Input current - normal operation, ID 2 mA @ VIN >10V. t0: tm t1 t2 Turn on into a short circuit tm: Measurementpoint for ID(lim) t1: Activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement. Datasheet 5 Rev. 1.4, 2012-07-11 Smart Low Side Power Switch HITFET BTS 117 Maximum allowable power dissipation On-state resistance Ptot = f(Tc ) RON = f(Tj ); ID=3.5A; VIN =10V BTS 117 55 200 W RDS(on) 45 Ptot 40 35 30 150 max. 125 100 typ. 25 75 20 15 50 10 25 5 0 0 20 40 60 80 100 120 C 0 -50 160 -25 0 25 50 75 100 150 Tj 150 On-state resistance Typ. input threshold voltage R ON = f(Tj ); ID= 3.5A; VIN=5V VIN(th) = f(Tj); ID =0.7mA; VDS =12V 250 2.0 V 200 1.6 175 VIN(th) RDS(on) C 150 1.4 1.2 max. 125 1.0 100 0.8 typ. 75 0.6 50 0.4 25 0.2 0 -50 -25 0 25 50 75 100 C 0.0 -50 150 Tj Datasheet -25 0 25 50 75 100 C 150 Tj 6 Rev. 1.4, 2012-07-11 Smart Low Side Power Switch HITFET BTS 117 Typ. transfer characteristics Typ. output characteristic ID = f(VIN); VDS =12V; Tj =25C ID = f(VDS); Tj =25C Parameter: V IN 10 10 10V 6V 5V A A ID ID 4V 6 4 6 4 Vin=3V 2 2 0 0 1 2 3 4 5 V 6 0 0 8 VIN 1 2 3 4 V 6 VDS Transient thermal impedance Z thJC = f (t p) parameter : D = t p/T 10 1 RthJC K/W 10 0 D=0.5 0.2 0.1 0.05 10 -1 0.02 0.01 0.005 0 10 -2 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s 10 2 tP Datasheet 7 Rev. 1.4, 2012-07-11 Smart Low Side Power Switch HITFET BTS 117 Application examples: Status signal of thermal shutdown by monitoring input current R St IN C V IN D HITFET V bb S V V IN thermal shutdown V = RST *IIN(3) Datasheet 8 Rev. 1.4, 2012-07-11 Smart Low Side Power Switch HITFET BTS 117 Package Outlines Package Outlines 10 0.2 A 9.9 0.2 B 2.8 0.2 4.4 1.270.1 1) 0...0.3 12.95 0.05 C 0...0.15 13.5 0.5 2.4 4.55 0.2 15.65 0.3 170.3 8.5 1) 3.7 -0.15 9.25 0.2 1 0.5 0.1 3x 0.75 0.1 2.4 1.05 2x 2.54 1) Figure 1 0.25 M A B C Typical All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 PG-TO220-3-1 To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020). You can find all of our packages, sorts of packing and others in our Infineon Internet Page "Products": http://www.infineon.com/products. Datasheet 9 Dimensions in mm Rev. 1.4, 2012-07-11 Smart Low Side Power Switch HITFET BTS 117 Revision History 2 Revision History Version Rev. 1.4 Date Changes 2012-07-11 released through hole automotive green Datasheet Package drawing update, removed staggered package added through hole version in green package Rev. 1.3 2008-12-10 Package drawing update Rev. 1.2 Rev. 1.1 2008-08-11 Package information updated, removed through hole version 2008-02-22 Package parameter (humidity and climatic) removed in Maximum ratings AEC icon and RoHS icon added Green product and AEC qualified added to feature list added Protection footnote on Page 4 and changed front page general description Package infromation updated to green Green explanation added Rev. 1.0 2000-05-19 released production version Edition 2012-07-11 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2012. All Rights Reserved. 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