APTGT200SK120G
APTGT200SK120G – Rev 1 July, 2006
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Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Q1
G1
0/ VB US
OUT
E1
CR2
VBUS
VBUS OUT
0/VBUS
E1
G1
S
ymbol Parameter Max ratings Unit
VCES Collector - Emitter Breakdown Voltage 1200 V
TC = 25°C 280
IC Continuous Collector Current TC = 80°C 200
ICM Pulsed Collector Current TC = 25°C 400
A
VGE Gate – Emitter Voltage ±20 V
PD Maximum Power Dissipation TC = 25°C 890 W
RBSOA Reverse Bias Safe Operating Area Tj = 125°C 400A @ 1100V
VCES = 1200V
IC = 200A @ Tc = 80°C
Applicatio
n
• AC and DC motor control
• Switched Mode Power Supplies
Features
• Fast Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching freque ncy up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant
Buck chopper
Fast Trench + Field Stop IGBT®
Power Module
APTGT200SK120G
APTGT200SK120G – Rev 1 July, 2006
www.microsemi
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com 2 - 5
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
ICES Zero Gate Voltage Collector Current VGE = 0V, VCE = 1200V 350 µA
Tj = 25°C 1.4 1.7 2.1
VCE(sat) Collector Emitter Saturation Voltage VGE =15V
IC = 200A Tj = 125°C 2.0 V
VGE(th) Gate Threshold Voltage VGE = VCE , IC = 3 mA 5.0 5.8 6.5 V
IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 500 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
Cies Input Capacitance 14
Coes Output Capacitance 0.8
Cres Reverse Transfer Capacitance
VGE = 0V
VCE = 25V
f = 1MHz 0.6
nF
Td(on) Turn-on Delay Time 260
Tr Rise Time 30
Td(off) Turn-off Delay Time 420
Tf Fall Time
Inductive Switching (25°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7Ω 70
ns
Td(on) Turn-on Delay Time 290
Tr Rise Time 50
Td(off) Turn-off Delay Time 520
Tf Fall Time
Inductive Switching (125°C)
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7Ω 90
ns
Eon Turn on Energy Tj = 125°C 20
Eoff Turn off Energy
VGE = ±15V
VBus = 600V
IC = 200A
RG = 2.7Ω Tj = 125°C 20
mJ
Chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
VRRM Maximum Peak Repetitive Reverse Voltage 1200 V
Tj = 25°C 350
IRM Maximum Reverse Leakage Current VR=1200V Tj = 125°C 600 µA
IF DC Forward Current Tc = 80°C 200 A
Tj = 25°C 1.6 2.1
VF Diode Forward Voltage IF = 200A
VGE = 0V Tj = 125°C 1.6 V
Tj = 25°C 170
trr Reverse Recovery Time
Tj = 125°C 280
ns
Tj = 25°C 18
Qrr Reverse Recovery Charge Tj = 125°C 36 µC
Tj = 25°C 10
Er Reverse Recovery Energy
IF = 200A
VR = 600V
di/dt =2500A/µs
Tj = 125°C 18 mJ
APTGT200SK120G
APTGT200SK120G – Rev 1 July, 2006
www.microsemi
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Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
IGBT 0.14
RthJC Junction to Case Thermal Resistance Diode 0.25
°C/W
VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V
TJ Operating junction temperature range -40 150
TSTG Storage Temperature Range -40 125
TC Operating Case Temperature -40 100
°C
To heatsink M6 3 5
Torque Mounting torque For terminals M5 2 3.5 N.m
Wt Package Weight 280 g
SP6 Package outline (dimensions in mm)
See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com
APTGT200SK120G
APTGT200SK120G – Rev 1 July, 2006
www.microsemi
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com 4 - 5
Typical Performance Curve
Output Characteristics (VGE=15V)
TJ=25°C
TJ=125°C
0
100
200
300
400
01234
VCE (V)
IC (A)
Output Characteristics
VGE
=15V
VGE=13V
VGE=17V
VGE=9V
0
100
200
300
400
01234
VCE (V)
IC (A)
TJ = 125°C
Transfert Characteristics
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
5 6 7 8 9 101112
VGE (V)
IC (A)
Energy losses vs Collector Current
Eon
Eon
Eoff
Er
0
10
20
30
40
50
0 50 100 150 200 250 300 350 400
IC (A)
E (mJ)
VCE = 600V
VGE = 15V
RG = 2.7Ω
TJ = 125°C
Eon
Eoff
Er
0
10
20
30
40
50
048121620
Gate Resistance (ohms)
E (mJ)
VCE = 600V
VGE
=15V
IC = 200A
TJ = 125°C
Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area
0
50
100
150
200
250
300
350
400
450
0 300 600 900 1200 1500
VCE (V)
IF (A)
VGE=15V
TJ=125°C
RG=2.7 Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
IGBT
APTGT200SK120G
APTGT200SK120G – Rev 1 July, 2006
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Forward Characteristic of diode
TJ=25°C
TJ=125°C
TJ=125°C
0
50
100
150
200
250
300
350
400
0 0.4 0.8 1.2 1.6 2 2.4
VF (V)
IF (A)
Hard
switching
ZCS
ZVS
0
10
20
30
40
50
60
0 40 80 120 160 200 240 280
IC (A)
Fmax, Operating Frequency (kHz)
VCE=600V
D= 50%
RG=2.7Ω
TJ=125°C
Tc=75°C
Operating Frequency vs Collector Curren
t
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.9
0.7
0.5
0.3
0.1
0.05 Single Pulse
0
0.05
0.1
0.15
0.2
0.25
0.3
0.00001 0.0001 0.001 0.01 0.1 1 10
rectangular Pulse Duration (Seconds)
Thermal Impedance (°C/W)
Diode
M icros e mi re se rve s the rig ht to c ha nge , witho ut notice , the spe cificatio ns and i nfo rmatio n co nta ine d he rein
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