COMPLEMENTARY SILICON "PN PNP HIGH-POWER TRANSISTORS .. designed for use in general purpose power amplifier and switching TIP3S TIP36 applications. TIP35A TiP36A F EATURES: ter Susta Volta TIP358 TiP36B * Collector-Emitter Sustaining Voltage - Vezowus 40V(Min}- TIP35, TIP36 TIP3SC_TIP36C 6O0V(Min)- TIP35A, TIPS6A, 80V(Min)- TIP35B, TIP36B 100V(Min)- TIP35C, TIP36C 25 AMPERE * DC Current Gain hFE=25(Min)@I.= 1.5A (NEMO NANSISrOne Current Gain-Bandwidth Product f,=3.0 MHz (Min)@ !,=1.0A 40-100 VOLTS MAXIMUM RATINGS 125 WATTS Characteristic Symbol| TIP35 | TIP3SA | TIP35B | TIP35C | Unit TIP36 | TIP36A | TIPS6B | TIP36C Collector-Emitter Voltage Veeo 40 60 80 100 V ee Collector-Base Voltage Veso | 40 | 60 go | 100 | v LF Emitter-Base Voltage Veso 5.6 Vv Collector Current - Continuous le 25 A TO-247(3P) - Peak 40 Base Current lp 5.0 A Total Power Dissipation@T,, = 25C Pp 125 Ww Derate above 25C 1.0 wrc Operating and Storage Junction Ty .Ts1 c Temperature Range -65 to +150 THERMAL CHARACTERISTICS PIN BASE TOR Characteristic Symbol Max Unit S-EMITTER Thermal Resistance Junction to Case| Rejc 1.0 CCW pim_ MILLIMETERS MIN MAX A 20.63 | 22.38 150 FIGURE -1 POWER DERATING B 1538 16.20 Cc 1.90 2.70 e D 510 | 610 E 128 E | 1481 | 15.22 = F | 11.72 | 1284 Z 100 G 420 | 450 E H 182 | 246 a 75 | 292 | 3.23 g J | 089 | 153 w SO K 5.26 | 5.66 S L | 1850 | 2150 & 2 M 468 | 5.36 o N 2.40 | 280 . 3.65 o5~C~SSCCaSSCSOOSCSSSCS 5 | oe | ose Te , TEMPERATURE(C) :TIP35, TIP35A, TIP35B, TIP35C NPN / TIP36, TIP36A, TIP36B, TIP36C PNP a ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage(1) TIP35,TIP36 VeEo(sus) 40 Vv (1g= 30 mA, Ip= 0) TIP35A,TIP36A 60 TIP35B,TIP36B 80 TIP35C,TIP36C 100 Collector Cutoff Current leeo mA (Veg= 30 V, ip= 0) TIP35, TIP36, TIP35A,TIP36A 1.0 (Vcg= 60 V, 1,= 0) TIP35B, TIP36B, TIP35C, TIPS6C 1.0 Collector Cutoff Current loes mA (Veg= 40 V, V.= 0) TIP35,TIP36 0.7 (Veg= 60 V, V,,= 0) TIP35A,TIP36A 0.7 (V,,= 80 V, V,,= 9) TIP35B,TIP36B 0.7 (Veg= 100 V, V_,= 0) TIP35C,TIP36C 0.7 Emitter Cutoff Current leno mA (Vep= 5.0 V, I= 0) 1.0 ON CHARACTERISTICS (1) DC Current Gain hFE (1, = 1.54, Veg = 4.0 V,) 25 (Ig=15A, Veg = 4.0 V, ) 15 75 Collector-Emitter Saturation Voltage Vce{sat) V (lk = 15A, 1, = 1.5A) 1.8 (I, = 25 A, Ip = 5.0A) 4.0 Base-Emitter On Voltage VE(on) Vv (Ip =15 A, Veg= 4.0 V) 2.0 (Ip #25 A, Veg= 4.0 V) 4.0 DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (2) f, MHz (Ig = 1.0A, Voge = 10V, fregy = 1 MHz ) 3.0 Small Signal Current Gain h, (Ig =1.0A , Veg = 10 V, f = 1 KHZ) 25 (1) Pulse Test: Pulse width = 300 us , Duty Cycle S20% (2) f, =|hy | fresrTIP35, TIP35A, TIP35B, TIP35C NPN / TIP36, TIP36A, TIP36B, TIP36C PNP el FIG-2 DC CURRENT GAIN hre , OC CURRENT GAIN 0.1 0.2 05 1.0 2.0 5.0 10 20 50 le , COLLECTOR CURRENT (AMP) FIG-4 TURN-ON TIME lofla=10 Vec#30V Ty=25C Mpcorr)*2 t, TIME (us) 2 a 03 0.5 1.0 2.0 5.0 10 20 30 fe , COLLECTOR CURRENT (AMP) FIG-6 ACTIVE REGION SAFE OPERATING AREA aa 33 NN 3a = o a - WN o oOo -- Bondng Wire Limit TIP36 Second Breakdown Limit Thermaily Limit T (#28C(Single Puse) TIP35A,TIP36A TIP35B,TIP36B TIP35C, TIP36C IC , COLLECTOR CURRENT (Amp) ai 2 yD ae 1 2 5 10 20 50 100 VCE , COLLECTOR EMITTER VOLTAGE (VOLTS) t, TIME (us) Ic, COLLECTOR CURRENT (Amp.) FIG-3 TURN-OFF TIME Iofla=10 'es=le2 Vec=30V Tya25C 03 05 4.0 2.0 5.0 10 20. 30 ic , COLLECTOR CURRENT (AMP) FIG-5 REVERSE BIASE SAFE OPERATING AREA TIP35C TIP36C. = Oo TIP35 TIP36 0 10 20 30 40 50 60 70 80 90 100 Vce , COLLECTOR EMITTER (VOLTS) There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate Ic-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of FIG-6 is base on T.=25 C:T pig is variable depending on power level. second breakdown pulse limi -ts are valid for duty cycles to 10% but must be derated when T,225C, second breakdown limitations do not der - ate the same as thermal limitation.