RB751V-40 Diode, Schottky barrier, surface mount These mold-type diodes are suitable for high density surface mounting on printed circuit boards. Dimensions (Units : mm) CATHODE MARK / f Features _p/ * available in UMD2 (USM, SOD-323) 5| 3 package lor part marking, number 14 | Applications ato, | 0.2+0.2 * low power rectifying 1.2540.2 0.9+0.2 0.9 Min. O8Min/= "7 7 7 21 Absolute maximum ratings (T, = 25C) Parameter Symbol Limits Unit Conditions Peak reverse voltage Vam 40 Vv DC reverse voltage Vr 30 Vv Mean rectifying current lo 30 mA Peak forward surge current lesm 200 mA |At 60 Hz for 1 cycle Junction temperature Tj 125 C Storage temperature Tstg A0 ~ +125 C Electrical characteristics (unless otherwise noted, T, = 25C) Parameter Symbol| Min |Typical| Max Unit Conditions Forward voltage Vey 0.26 0.37 Vv IrF=1mA Reverse current In 0.20 0.5 HA |V_=10V Capacitance between _ _ terminals Cy 2.0 pF Va= 1 V,f= 1 MHz Diodes ReMiRB751V-40 Schottky barrier diodes Electrical characteristic curves Typ. pulse measurement Ia: Ide E 5 aa or & ac S 2D 3 3S 100 Ww yy) & og = Ww = > 5 # 10n Le Tn 0.6 0.8 1.0 12 FORWARD VOLTAGE = Vr iv: REVERSE VOLTAGE : Va iV: Figure 1 Figure 2 0 2 4 6 8 10 1 14 REVERSE VOLTAGE : Va (Vv) Figure 3 CAPACITANCE. BETWEEN TERMINALS : Cr (pF) 190 ROM Diodes