SHINDENGEN
2SK3012
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
OUTLINE DIMENSIONS
RATINGS
(F16W60VX2)
600V 12A
Case : E-pack
VX-2 Series Power MOSFET N-Channel Enhancement type
(Unit : mm)
Case : MTO-3P
●Switching power supply of
AC 100-200V input
●Inverter
●Power Factor Control Circuit
APPLICATION
●Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
●The static Rds(on) is small.
●The switching time is fast.
●Avalanche resistance guaranteed.
FEATURES
●Absolute Maximum Ratings （Tc = 25℃）
Item Symbol Conditions Ratings Unit
Storage Temperature Tstg -55～150 ℃
Channel Temperature Tch 150
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS ±30
Continuous Drain Current（DC）ID16
Continuous Drain Current（Peak) IDP 48 A
Continuous Source Current（DC）IS16
Total Power Dissipation PT125 W
Single Pulse Avalanche Current IAS Tch = 25℃16A
Mounting Torpue TOR (Recommended torque : 0.5N･m）0.8 N･m
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
2SK3012( F16W60VX2 )
VX-2 Series Power MOSFET
●Electrical Characteristics Tc = 25℃
Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS ID = 1mA, VGS = 0V 600 V
Zero Gate Voltage Drain Current IDSS VDS = 600V, VGS = 0V 250 μA
Gate-Source Leakage Current IGSS VGS = ±30V, VDS = 0V ±0.1
Forward Tranｓconductance gfs ID = 8A, VDS = 10V 6.2 10.0 S
Static Drain-Source On-ｓtate Resistance RDS(ON) ID = 8A, VGS = 10V 0.45 0.6 Ω
Gate Threshold Voltage VTH ID = 1mA, VDS = 10V 2.5 3 3.5 V
Source-Drain Diode Forward Voltage VSD IS = 8A, VGS = 0V 1.5
Thermal Resistance θjc junction to case 1℃/Ｗ
Total Gate Charge Qg VGS = 10V, ID = 16A, VDD = 400V 85 nC
Input Capacitance Ciss 2300
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ180 pF
Output Capacitance Coss 480
Turn-On Time ton ID = 8A, VGS = 10V, RL = 19Ω130 280 ns
Turn-Off Time toff 260 500
0 5 10 15 20
0
4
8
12
16
20
24
28
32
2SK3012 Transfer Characteristics
VDS = 25V
pulse test
TYP
Tc = −55°C25°C
100°C
150°C
Gate-Source Voltage VGS [V]
Drain Current ID [A]
Static Drain-Source On-state Resistance
0.01
0.1
1
10
-50 0 50 100 150
2SK3012
VGS = 10V
pulse test
TYP
ID = 8A
Case Temperature Tc [°C]
Static Drain-Source On-state Resistance RDS(ON)
[Ω]
Gate Threshold Voltage
0
1
2
3
4
5
6
-50 0 50 100 150
2SK3012
VDS = 10V
ID = 1mA
TYP
Case Temperature Tc [°C]
Gate Threshold Voltage VTH
[V]
Safe Operating Area
0.01
0.1
1
10
100
110 100 1000
2SK3012
100µs
Tc = 25°C
Single Pulse
200µs
1ms
10ms
DC
Drain-Source Voltage VDS [V]
Drain Current ID [A]
RDS(ON)
limit
Transient Thermal Impedance
0.01
0.1
1
10
2SK3012
10-4 10-3 10-2 10-1 100101102
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
Time t [s]
Transient Thermal Impedance θjc(t) [°C/W]
0
20
40
60
80
100
050 100 150
2SK3012
Single Avalanche Energy Derating [%]
Starting Channel Temperature Tch [°C]
Single Avalanche Energy Derating
Capacitance
10
100
1000
10000
020 40 60 80 100
2SK3012
0.005
f=1MHz
Tc=25°C
TYP
Ciss
Coss
Crss
Drain-Source Voltage VDS [V]
Capacitance Ciss Coss Crss [pF]
Single Avalanche Current - Inductive Load
0.1
1
10
100
2SK3012
0.1 1 10 100
0.05 0.50.2 20 5052 200 500 2000 5000
0.02 0.05 0.50.2 20520.0050.002
VDD = 90V
VGS = 15V → 0V
Rg = 15Ω
IAS = 16A
EAS = 500mJEAR = 50mJ
Inductance L [mH]
Single Avalanche Current IAS [A]
0
20
40
60
80
100
050 100 150
2SK3012 Power Derating
Power Derating [%]
Case Temperature Tc [°C]
050 100 150 200
0
100
200
300
400
500
2SK3012
0
5
10
15
20
200V
Gate Charge Characteristics
ID = 16A
TYP
100V
VDD = 400V VGS
VDS
Gate Charge Qg [nC]
Drain-Source Voltage VDS [V]
Gate-Source Voltage VGS [V]
