DATA SHEET
The information in this document is subject to change without notice.
© 1988
Document No. P11305EJ4V0DS00 (4th edition)
Date Published September 1997 NS
Printed in Japan
PHOTOCOUPLER
PS2506-1,-2,-4, PS2506L-1,-2,-4
HIGH ISOLATION VOLTAGE
AC INPUT, DARLINGTON TRANSISTOR TYPE
MULTI PHOTOCOUPLER SERIES
The mark
shows major revised poi nts.
−NEPOCTM Series−
DESCRIPTION
The PS2506-1, -2, -4 and PS2506L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode
and an NPN silicon darlington connected phototransistor.
The PS2506-1, -2, -4 are in a plastic DIP (Dual In-line Package) and the PS2506L-1, -2, -4 are lead bending type
(Gull-wing) for surface mount.
FEATURES
• AC input response
• High isolation voltage (BV = 5 000 Vr.m.s.)
• High current transfer ratio (CTR = 2 000 % TYP.)
• High-speed switching (tr, tf = 100
µ
s TYP.)
• Taping product number(PS2506L-1-E3, E4, F3, F4)
(PS2506L-2-E3, E4)
• UL approved (File No. E72422 (S) )
APPLICATIONS
• Power supply
• Telephone/FAX.
• FA/OA equipment
• Programmable logic controller
2
PS2506-1,-2,-4,PS2506L-1,-2,-4
PACKAGE DIMENSIONS (in millimeters)
DIP Type
5.1 MAX.
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
7.62
0.50 ± 0.10
0.25
M
43
12
PS2506-1 (New Package)
10.2 MAX.
1.25±0.15
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
7.62
0.50 ± 0.10
0.25
M
87
12
65
34
0 to 15˚
PS2506-2
20.3 MAX.
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
2.54
7.62
0.50 ± 0.10
0.25
M
16 15
12
14 13
34
12 11
56
10 9
78
PS2506-4
0 to 15˚
0 to 15˚
PS2506-1
4.6 ± 0.35
1.25±0.15
6.5
3.8
MAX.
4.55
MAX.
2.8
MIN.
0.65
0.50 ± 0.10
0.25
M
0 to 15˚
7.62
2.54
1.25±0.15 1.25±0.15
43
12
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
1, 3, 5, 7.
Anode,
Cathode
2, 4, 6, 8.
Cathode,
Anode
9,11,13,15. Emitter
10,12,14,16. Collector
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
Caution New package 1-ch only
3
PS2506-1,-2,-4,PS2506L-1,-2,-4
Lead Bending Type
5.1 MAX.
6.5
3.8
MAX.
2.54
7.62
0.25
M
PS2506L-1 (New Package)
10.2 MAX.
1.25±0.15
6.5
3.8
MAX.
2.54
7.62
PS2506L-2
20.3 MAX.
6.5
3.8
MAX.
2.54
7.62
0.25
M
PS2506L-4
PS2506L-1
4.6 ± 0.35
1.25±0.15
6.5
3.8
MAX.
0.25
M
7.62
2.54
1.25±0.15 1.25±0.15
0.05 to 0.2
9.60 ± 0.4
0.90 ± 0.25
0.05 to 0.2
9.60 ± 0.4
0.9 ± 0.25
0.25
M
0.05 to 0.2
9.60 ± 0.4
0.9 ± 0.25
0.05 to 0.2
9.60 ± 0.4
0.9 ± 0.25
43
12
87
12
65
34
16 15
12
14 13
34
12 11
56
10 9
78
43
12
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
1, 3. Anode, Cathode
2, 4. Cathode, Anode
5, 7. Emitter
6, 8. Collector
1, 3, 5, 7.
Anode,
Cathode
2, 4, 6, 8.
Cathode,
Anode
9,11,13,15. Emitter
10,12,14,16. Collector
1. Anode, Cathode
2. Cathode, Anode
3. Emitter
4. Collector
Caution New package 1-ch only
4
PS2506-1,-2,-4,PS2506L-1,-2,-4
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2506-1,
PS2506L-1 PS2506-2,-4
PS2506L-2,-4
Diode Forward Current (DC) IF±80 mA
Power Dissipati on Derating
∆
PD/°C 1.5 1.2 mW/°C
Power Dissipati on PD150 120 mW/ch
Peak Forward Current*1 IFP ±1 A
Transistor Collector to Emitter Voltage VCEO 40 V
Emitter to Collector Voltage VECO 6V
Collector Current IC200 160 mA/ch
Power Dissipati on Derating
∆
PC/°C 2.0 1.6 mW/°C
Power Dissipati on PC200 160 mW/ch
Isolat i on Voltage*2 B V 5 000 Vr.m. s.
Operating Am bi ent Tem perature TA–55 to +100 °C
Storage Temperat ure Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VFIF = ±10 mA 1.17 1.4 V
Terminal Capaci tance CtV = 0 V, f = 1. 0 M Hz 100 pF
Transistor Collector to E m i t ter D ar k
Current ICEO VCE = 40 V, I F = 0 m A 400 nA
Coupled Current Transfer Ratio CTR IF = ±1 mA, VCE = 2 V 200 2 000 %
CTR Ratio *1 CTR1/
CTR2
IF = 1 mA, VCE = 2 V 0.3 1.0 3.0
Collector Saturatio n
Voltage VCE (sat) IF = ±1 mA, IC = 2 mA 1.0 V
Isolat i on Resistance RI-O VI-O = 1.0 kV 1011 Ω
Isolat i on Capacitance CI-O V = 0 V, f = 1. 0 M Hz 0.5 pF
Rise Time *2 trVCC = 10 V, I C = 2 mA, RL = 100 Ω100
µ
s
Fall Time *2 tf100
*1 CTR1 = IC1/IF1, CTR2 = IC2/IF2 *2 Test circuit for switching time
V
CC
V
OUT
R
L
= 100 Ω
50 Ω
I
F
Pulse Input
PW = 1 ms
Duty Cycle = 1/10
I
F1
I
F2
I
C1
I
C2
V
CE
5
PS2506-1,-2,-4,PS2506L-1,-2,-4
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
150
100
50
02550
75 100 125 150
10
1
100
1000
10 000
–50 –25 0 25 50 75 100 0.2
0.5
1
5
10
200
50
0.4
100
0.6 0.8 1.0 1.2 1.4 1.6
10 mA
5 mA
1 mA
0.5 mA
I
F
= 0.1 mA
0.2 mA
1.5 mW/˚C
1.2 mW/˚C
PS2506-1
PS2506L-1
PS2506-2
PS2506L-2
PS2506-4
PS2506L-4
V
CE
= 2 V
5 V
10 V
24 V
40 V
–1.0
80
–1.5
–40
–80
–60
0
–0.5 0.5 1.51.0
0
–20
40
20
60
0.5
0.1
1
5
10
50
100
0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5
0 ˚C
–25 ˚C
–55 ˚C
+60 ˚C
+25 ˚C
T
A
= +100 ˚C
Diode Power Dissipation P
D
(mW)
Transistor Power Dissipation P
C
(mW)
Ambient Temperature T
A
(˚C)
Forward Current I
F
(mA)
Forward Voltage V
F
(V)
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE(sat)
(V)
Ambient Temperature T
A
(˚C)
Ambient Temperature T
A
(˚C)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE TRANSISTOR POWER DISSIPATION
vs. AMBIENT TEMPERATURE
FORWARD CURRENT vs.
FORWARD VOLTAGE
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
Collector Current I
C
(mA) Forward Current I
F
(mA)
Forward Voltage V
F
(V)
FORWARD CURRENT vs.
FORWARD VOLTAGE
150
100
50
02550
75 100 125 150
2 mW/˚C
1.6 mW/˚C
200
PS2506-2
PS2506L-2
PS2506-4
PS2506L-4
PS2506-1
PS2506L-1
6
PS2506-1,-2,-4,PS2506L-1,-2,-4
1.4
25
1.2
1.0
0.8
0.6
0.4
0.2
–50 0–25 50 75 100
8 000
0
1 000
2 000
3 000
4 000
5 000
6 000
7 000
V
CE
= 2 V
0.1 0.5 1 5 10 30
1 000
500
100
50
10
5
2100
50 500 1 k 5 k
V
CC
= 5 V,
I
C
= 2 mA,
CTR = 2 280 %
t
f
500
50
1 k300
10
100
1 000
5 000
10 000
5 k 10 k 50 k
1 500
2 000
2 500
3 000
0
500
1 000
V
CE
= 2 V
50 10010 500
V
CC
= 5 V,
I
F
= 1 mA,
CTR = 2 280 %
t
d
t
s
30 500 100 k
t
f
t
s
t
r
t
d
t
r
0
20
40
60
80
100
120
140
160
246810
10mA
5 mA
1 mA
I
F
= 0.5 mA
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
Forward Current I
F
(mA)
Ambient Temperature T
A
(˚C)
Load Resistance R
L
(Ω)
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Load Resistance R
L
(Ω)
Switching Time t ( s)
µ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE
SWITCHING TIME vs.
LOAD RESISTANCE
Switching Time t ( s)
µ
Forward Current I
F
( A)
Current Transfer Ratio CTR (%)
CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
µ
Collector Current I
C
(mA)
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
7
PS2506-1,-2,-4,PS2506L-1,-2,-4
10 102103104105106
0.6
0
0.2
0.4
0.8
1.0
1.2
T
A
= 25
o
C
T
A
= 60
o
C
510
0.2 0.5 1 2 20 50 100 200
I
F
= 1 mA,
V
CE
= 2 V
–20
–15
–10
–5
0
R
L
= 100 Ω
Time (Hr)
CTR (Relative Value)
LONG TIME CTR DEGRADATION
Frequency f (kHz)
Normalized Gain G
V
FREQUENCY RESPONSE
I
F
= 1 mA (TYP.)
8
PS2506-1,-2,-4,PS2506L-1,-2,-4
TAPING SPECIFICATIONS (in millimeters)
Taping Direction
PS2506L-1-E3
PS2506L-1-F3 PS2506L-1-E4
PS2506L-1-F4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
5.6±0.1
8.0±0.1
Outline and Dimensions (Reel)
Packing: PS2506L-1-E3, E4 1 000 pcs/reel
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
16.4
+2.0
–0.0
PS2506L-1-E3, E4: 250
PS2506L-1-F3, F4: 330
φ
80.0±5.0
φ
φ
PS2506L-1-F3, F4 2 000 pcs/reel
9
PS2506-1,-2,-4,PS2506L-1,-2,-4
Taping Direction
PS2506L-2-E3 PS2506L-2-E4
Outline and Dimensions (Tape)
1.55±0.1
2.0±0.1
4.0±0.1 1.55±0.1
1.75±0.1
4.3±0.2
10.3±0.1
0.3
7.5±0.1
16.0±0.3
10.4±0.1
12.0±0.1
Outline and Dimensions (Reel)
Packing: 1 000 pcs/reel
16.4
+2.0
–0.0
80.0±5.0
φ
330
φ
2.0±0.5
R 1.0
13.0±0.5
φ
21.0±0.8
φ
10
PS2506-1,-2,-4,PS2506L-1,-2,-4
RECOMMENDED SOLDERING CONDITIONS
(1) Infrared reflow soldering
• Peak reflow temperature 235 °C (package surface temperature)
• Time of temperature higher than 210 °C 30 seconds or less
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt % is recommended.)
60 to 90 s
(preheating)
210 ˚C
120 to 160 ˚C
Package Surface Temperature T (˚C)
Time (s)
(heating)
to 10 s
to 30 s
235 ˚C (peak temperature)
Recommended Temperature Profile of Infrared Reflow
Peak temperature 235 ˚C or below
Caution Please avoid to removed the residual flux by water after the first reflow processes.
(2) Dip soldering
• Temperature 260 °C or below (molten solder temperature)
• Time 10 seconds or less
• Number of times One
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine content of
0.2 Wt % is recommended.)
11
PS2506-1,-2,-4,PS2506L-1,-2,-4
[MEMO]
PS2506-1,-2,-4,PS2506L-1,-2,-4
CAUTION
Within this device there exists GaAs (Gallium Arsenide) material which is a
harmful substance if ingested. Please do not under any circumstances break the
hermetic seal.
NEPOC is a trademark of NEC Corporation.
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
