MBR20100CT Dual High Voltage Schottky Rectifier Features * * * * * * Low Forward Voltage Drop Low Power Loss and High Efficiency High Surge Capability Rohs Compliant Matte Tin(Sn) Lead Finish Terminal Leads Surface is Corrosion Resistant and can withstand to 260C Absolute Maximum Ratings* Symbol VRRM VR + TO-220 PIN1 _ PIN3 PIN2 1 Mark : MBR20100CT Ta = 25C unless otherwise noted Parameter Value Unit Maximum Repetitive Reverse Voltage 100 V Maximum DC Reverse Voltage 100 V 10 (Per Leg) 20 (Per Device) A 150 A -55 to 150 C IF(AV) Average Rectified Forward Current, Tc= 120C IFSM Peak Forward Surge Current, 8.3mS Half Sine wave TSTG Storage Temperature Range Operating Junction Temperature 150 C TJ * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics* Ta = 25C unless otherwise noted Symbol Max. Unit RJC Thermal Resistance, Junction to Case per Leg Parameter 1.5 C/W RJA Thermal Resistance, Junction to Ambient per Leg 62.5 C/W * JESD51-10 Electrical Characteristics* Symbol IR VF Parameter Ta = 25C unless otherwise noted Test Condition Min. Max. Unit Reverse Current VR = 100V VR = 100V Tc = 25 C Tc = 125 C 0.2 5 mA Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Tc = 25 C Tc = 125 C Tc = 25 C Tc = 125 C 0.8 0.7 0.9 0.8 V * DC Item are tested by Pulse Test : Pulse Width300s, Duty Cycle2% (c) 2010 Fairchild Semiconductor Corporation MBR20100CT Rev. A0 www.fairchildsemi.com 1 MBR20100CT -- Dual High Voltage Schottky Rectifier October 2010 Figure 1. Forward Current Characteristics Figure 2. Reverse Leakage Current o Reverse Current, IR[uA] Forward Current, IF[A] 1000 10 o TJ=125 C 1 o TJ=75 C o TJ=25 C 0.1 TJ=125 C 100 10 o TJ=75 C 1 o 0.1 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 TJ=25 C 0.01 1.0 20 40 Forward Voltage Drop, VF[V] Figure 3.Junction Capacitance 80 100 Figure 4. Power Derating 2 F(AV) [A] 30 1 0.9 0.8 0.7 0.6 0.5 f=1mhz Average Forward Current, I Juntion Capacitance, CJ[nF] 60 Reverse Voltage, VR[V] 0.4 0.3 0.2 0.1 0 2 4 6 8 10 DC 20 15 10 5 0 0 Reverse Voltage, VR[V] 25 50 75 100 125 150 o Case Temperature, TC[ C] (c) 2010 Fairchild Semiconductor Corporation MBR20100CT Rev. A0 25 www.fairchildsemi.com 2 MBR20100CT -- Dual High Voltage Schottky Rectifier Typical Performance Characteristics MBR20100CT -- Dual High Voltage Schottky Rectifier Phisical Dimensions TO-220 [ DUAL GAUGE ] Dimensions in Millimeters (c) 2010 Fairchild Semiconductor Corporation MBR20100CT Rev. A0 www.fairchildsemi.com 3 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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