MBR20100CT — Dual High Voltage Schottky Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20100CT Rev. A0 1
October 2010
MBR20100CT
Dual High Voltage Schottky Rectifier
Features
Low Forward Voltage Drop
Low Power Loss and High Efficiency
High Surge Capability
Rohs Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Cor rosion Resi stant
and can withstand to 260°C
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics* Ta = 25°C unless otherwise noted
* JESD51-10
Electrical Characteristics* Ta = 25°C unless otherwise noted
* DC Item are tested by Pulse Test : Pulse Width300μs, Duty Cycle2%
Symbol Parameter Value Unit
VRRM Maximum Repetiti ve Revers e Voltage 100 V
VRMaximum DC Reverse Voltage 100 V
IF(AV) Average Rectifi ed Forward Curre nt, Tc= 120°C10 (Per Leg)
20 (Per Device) A
IFSM Peak Forward Surge Current, 8.3mS Half Sine wave 150 A
TSTG Storage Temperature Range -55 to 150 °C
TJOperating Junction Temperature 150 °C
Symbol Parameter Max. Unit
RθJCThermal Resistance, Junction to Case per Leg 1.5 °C/W
RθJAThermal Resistance, Junction to Ambient per Leg 62.5 °C/W
Symbol Parameter Test Condition Min. Max. Unit
IRReverse Current VR
= 1 0 0 V
VR
= 1 0 0 V Tc = 25 °C
Tc = 125 °C0.2
5mA
VFForward Voltage
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
Tc = 25 °C
Tc = 125 °C
Tc = 25 °C
Tc = 125 °C
0.8
0.7
0.9
0.8
V
Mark : MBR20100CT
1 TO-220 PIN3
PIN1
PIN2
_
+
MBR20100CT — Dual High Voltage Schottky Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20100CT Rev. A0 2
Typical Performance Characteristics
Figure 1. Forward Current Cha racteristics Figure 2. Reverse Leakage Current
Figure 3.Junction Capacitance Figure 4. Power Derating
0.01
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TJ=125 oC
TJ=75 oC
TJ=25 oC
Forward Voltage Drop, VF[V]
Forward Current, IF[A]
20 40 60 80 100
0.01
0.1
1
10
100
1000
TJ=25 oC
TJ=75 oC
TJ=125 oC
Reverse Current, IR[uA]
Reverse Voltage, VR[V]
0246810
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
2
f=1mhz
Juntion Capacitance, C J[nF]
Reverse Voltage, VR[V]
0 25 50 75 100 125 150
0
5
10
15
20
25
30
DC
Average Forward Current, I F(AV)[A]
Case Temp erature, TC[oC]
MBR20100CT — Dual High Voltage Schottky Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
MBR20100CT Rev. A0 3
Phisical Dimensions
TO-220 [ DUAL GAUGE ]
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I50