DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2858 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION PACKAGE DRAWING (Unit : mm) <R> The 2SK2858 is a switching device which can be driven directly by a 2.10.1 2.5 V power source. 1.250.1 The 2SK2858 has excellent switching characteristics, and is suitable for 0.65 2 3 1 0.3+0.1 -0 * Can be driven by a 2.5 V power source 0.65 FEATURES 0.3+0.1 -0 2.00.2 use as a high-speed switching device in digital circuits. * Low gate cut-off voltage 0.90.1 0.15+0.1 -0 0.3 Marking PART NUMBER PACKAGE 2SK2858 SC-70 (SSP) 0 to 0.1 ORDERING INFORMATION Marking: G24 1. Source 2. Gate 3. Drain ABSOLUTE MAXIMUM RATINGS (TA = 25C) Drain to Source Voltage VDSS 30 V Gate to Source Voltage VGSS 20 V Drain Current (DC) ID(DC) 0.1 A ID(pulse) 0.4 A PT 150 mW Drain Current (pulse) Note Total Power Dissipation Channel Temperature Tch 150 C Storage Temperature Tstg -55 to +150 C Note PW 10 s, Duty Cycle 1% Remark <R> EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D11706EJ4V0DS00 (4th edition) Date Published February 2006 NS CP(K) Printed in Japan 1996, 2006 The mark <R> shows major revised points. The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field. 2SK2858 ELECTRICAL CHARACTERISTICS (TA = 25C) CHARACTERISTICS SYMBOL MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 A Gate Leakage Current IGSS VGS = 20 V, VDS = 0 V 10 A 1.8 V Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note VGS(off) VDS = 3 V, ID = 10 A 1.0 | yfs | VDS = 3 V, ID = 10 m A 20 RDS(on)1 VGS = 2.5 V, ID = 1 m A 8 15 RDS(on)2 VGS = 4 V, ID = 10 mA 4 8 RDS(on)3 VGS = 10 V, ID = 10 mA 3 5 1.4 mS Input Capacitance Ciss VDS = 3 V 9 pF Output Capacitance Coss VGS = 0 V 12 pF Reverse Transfer Capacitance Crss f = 1 MHz 2.1 pF Turn-on Delay Time td(on) VDD = 3 V, ID = 10 mA 40 ns tr VGS = 4 V 55 ns td(off) RG = 10 68 ns 64 ns Rise Time Turn-off Delay Time Fall Time <R> TEST CONDITIONS tf Note Pulsed TEST CIRCUIT SWITCHING TIME D.U.T. RL RG PG. VGS VGS Wave Form 0 90% VDD 90% ID 90% ID VGS 0 ID 0 10% 10% Wave Form = 1 s Duty Cycle 1% 2 VGS 10% td(on) tr ton td(off) tf toff Data Sheet D11706EJ4V0DS 2SK2858 TYPICAL CHARACTERISTICS (TA = 25C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 400 150 ID - Drain Current - mA PT - Total Power Dissipation - mW 180 120 90 60 VGS = 4 V 300 3.5 V 200 3V 100 30 2.5 V 0 60 90 120 150 30 TA - Ambient Temperature - C 0 180 2 | yfs | - Forward Transfer Admittance - mS 0.01 TA = 125C 75C 25C -25C 0.00001 RDS(on) - Drain to Source On-state Resistance - 0.000001 1.0 4.0 2.0 3.0 VGS - Gate to Sorce Voltage - V 20 VGS = 2.5 V 15 TA = 125C 75C 25C -25C 5 10 0.0001 0.001 0.01 ID - Drain Current - A 100 0.1 TA = -25C 25C 75C 125C 10 1 0.0001 5.0 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 10 VDS = 3 V 0.001 0.01 0.1 1 ID - Drain Current - A RDS(on) - Drain to Source On-state Resistance - ID - Drain Current - A 0.1 0.0001 10 1000 VDS = 3 V 0.001 8 FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT TRANSFER CHARACTERISTICS 1 6 4 VDS - Drain to Source Voltage - V DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 15 VGS = 4 V 10 5 0 0.0001 Data Sheet D11706EJ4V0DS TA = 125C 75C 25C -25C 0.001 0.01 0.1 ID - Drain Current - A 1 3 10 VGS = 10 V 8 6 TA = 125C 75C 25C -25C 4 2 0 0.0001 0.1 0.001 0.01 ID - Drain Current - A 1 100 30 ID = 1 mA 10 0 Ciss Coss 1 16 20 Crss 0.1 1 10 100 tf td(on) td(off) VDD = 3 V VGS(on) = 4V RG = 10 10 0.01 0.01 0.001 0.8 0.1 ID - Drain Current - A 0.1 0.6 tr 100 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1 IF - Diode Forward Current - A 12 8 SWITCHING CHARACTERISTICS VDS - Drain to Source Voltage - V 1.2 1.0 VF(S-D) - Source to Drain Voltage - V 4 4 1000 10 0.0001 0.4 10 mA 100 mA 20 <R> f = 1 MHz VGS = 0 V 0.1 0.01 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE VGS - Gate to Source Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE Ciss, Coss, Crss - Capacitance - pF RDS (on) - Drain to Source On-state Resistance - DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT td(on), tr, td(off), tf - Switchig Time - ns RDS(on) - Drain to Source On-state Resistance - 2SK2858 Data Sheet D11706EJ4V0DS 1 2SK2858 * The information in this document is current as of February, 2006. 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