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1996, 2006
MOS FIELD EFFECT TRANSISTOR
2SK2858
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DATA SHEET
Document No. D11706EJ4V0DS00 (4th edition)
Date Published February 2006 NS CP(K)
Printed in Japan The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5 V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5 V power source
• Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER PACKAGE
2SK2858 SC-70 (SSP)
Marking: G24
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage VDSS 30 V
Gate to Source Voltage VGSS ±20 V
Drain Current (DC) ID(DC) ±0.1 A
Drain Current (pulse) Note ID(pulse) ±0.4 A
Total Power Dissipation PT 150 mW
Channel Temperature Tch 150 °C
Storage Temperature Tstg –55 to +150 °C
Note PW ≤ 10
μ
s, Duty Cycle ≤ 1%
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
PACKAGE DRAWING (Unit : mm)
2.1±0.1
1.25±0.1
2.0±0.20.9±0.1
3
Marking
2
1
0.3+0.1
−0
0.15+0.1
−0
0.3
0.65
0 to 0.1
0.3 0.65
+0.1
−0
1. Source
2. Gate
3. Drain
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
<R>
<R>
Data Sheet D11706EJ4V0DS
2
2SK2858
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1
μ
A
Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10
μ
A
Gate Cut-off Voltage VGS(off) VDS = 3 V, ID = 10
μ
A 1.0 1.4 1.8 V
Forward Transfer Admittance Note | yfs | VDS = 3 V, ID = 10 m A 20 mS
RDS(on)1 VGS = 2.5 V, ID = 1 m A 8 15
Ω
RDS(on)2 VGS = 4 V, ID = 10 mA 4 8
Ω
Drain to Source On-state Resistance Note
RDS(on)3 VGS = 10 V, ID = 10 mA 3 5
Ω
Input Capacitance Ciss VDS = 3 V 9 pF
Output Capacitance Coss VGS = 0 V 12 pF
Reverse Transfer Capacitance Crss f = 1 MHz 2.1 pF
Turn-on Delay Time td(on) VDD = 3 V, ID = 10 mA 40 ns
Rise Time tr VGS = 4 V 55 ns
Turn-off Delay Time td(off) RG = 10 Ω 68 ns
Fall Time tf 64 ns
Note Pulsed
TEST CIRCUIT SWITCHING TIME
PG. R
G
0
V
GS
D.U.T.
R
L
V
DD
τ = 1 s
μ
Duty Cycle ≤ 1%
V
GS
Wave Form
I
D
Wave Form
V
GS
10%
90%
V
GS
10%
0
I
D
90%
90%
t
d(on)
t
r
t
d(off)
t
f
10%
τ
I
D
0
t
on
t
off
<R>
Data Sheet D11706EJ4V0DS 3
2SK2858
TYPICAL CHARACTERISTICS (TA = 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
P
T
- Total Power Dissipation - mW
T
A
- Ambient Temperature - ˚C
30
30
60
90
120
150
180
0 15012060 18090
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
- Drain Current - mA
2810
46
200
100
0
400
300
2.5 V
3 V
3.5 V
V
GS
= 4 V
1.0
2.0
3.0
1
0.1
0.01
0.001
0.0001
0.00001
0.000001 4.0 5.0
VGS - Gate to Sorce Voltage - V
T
A
= 125˚C
75˚C
25˚C
−25˚C
VDS = 3 V
TRANSFER CHARACTERISTICS
ID - Drain Current - A
1
1
10
100
1000
0.01 0.10.0010.0001
V
DS
= 3 V
ID - Drain Current - A
| yfs | - Forward Transfer Admittance - mS
T
A
= −25˚C
25˚C
75˚C
125˚C
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.0001 0.001 0.1
0.01
ID - Drain Current - A
RDS(on) - Drain to Source On-state Resistance - Ω
10
15
10
20
5
VGS = 2.5 V
TA = 125˚C
25˚C
75˚C
−25˚C
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
0.010.001
0.0001 0.1 1
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
0
5
10
15 V
GS
= 4 V
T
A
= 125˚C
75˚C
25˚C
−25˚C
Data Sheet D11706EJ4V0DS
4
2SK2858
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10.1
0.010.0010.0001
I
D
- Drain Current - A
R
DS(on)
- Drain to Source On-state Resistance - Ω
0
2
8
4
6
10
V
GS
= 10 V
T
A
= 125
˚C
75
˚C
25
˚C
−25
˚C
0
10
20
30
48
12 16 20
RDS (on) - Drain to Source On-state Resistance - Ω
VGS - Gate to Source Voltage - V
ID = 1 mA
10 mA
100 mA
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
1100.01 0.1 100
10
100
1
0.1
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
C
iss
, C
oss
, C
rss
- Capacitance - pF
V
DS
- Drain to Source Voltage - V
C
iss
C
oss
C
rss
f = 1 MHz
V
GS
= 0 V
0.01 0.1 1
I
D
- Drain Current - A
t
d(on)
, t
r
, t
d(off)
, t
f
- Switchig Time - ns
1000
SWITCHING CHARACTERISTICS
V
DD
= 3 V
V
GS(on)
= 4V
R
G
= 10 Ω
100
10
t
d(off)
t
d(on)
t
f
t
r
0.0001
0.001
0.01
1
0.1
0.60.4 0.8 1.0 1.2
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
I
F
- Diode Forward Current - A
V
F(S-D)
- Source to Drain Voltage - V
<R>
2SK2858
The information in this document is current as of February, 2006. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC Electronics data
sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not
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representative for availability and additional information.
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