IPB100N06S2L-05
IPP100N06S2L-05
OptiMOS® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25 °C, VGS=10 V 100 A
TC=100 °C,
VGS=10 V2) 100
Pulsed drain current2) ID,pulse TC=25 °C 400
Avalanche energy, single pulse2) EAS ID= 80 A 810 mJ
Gate source voltage4) VGS ±20 V
Power dissipation Ptot TC=25 °C 300 W
Operating and storage temperature Tj, Tstg -55 ... +175 °C
Value
VDS 55 V
RDS(on),max (SMD version) 4.4 mΩ
ID100 A
Product Summary
Type Package Ordering Code Marking
IPB100N06S2L-05 PG-TO263-3-2 SP0002-19003 PN06L05
IPP100N06S2L-05 PG-TO220-3-1 SP0002-18879 PN06L05
PG-TO220-3-1PG-TO263-3-2
Rev. 1.0 page 1 2006-03-13
IPB100N06S2L-05
IPP100N06S2L-05
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case RthJC - - 0.5 K/W
Thermal resistance, junction -
ambient, leaded RthJA --62
SMD version, device on PCB RthJA minimal footprint - - 62
6 cm2 cooling area5) --40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID= 1 mA 55 - - V
Gate threshold voltage VGS(th) VDS=VGS, ID=250 µA 1.2 1.6 2.0
Zero gate voltage drain current IDSS
VDS=55 V, VGS=0 V,
Tj=25 °C - 0.01 1 µA
VDS=55 V, VGS=0 V,
Tj=125 °C2) - 1 100
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - 1 100 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=80 A - 4.3 5.9 mΩ
VGS=4.5 V, ID=80 A,
SMD version - 4.0 5.6
Drain-source on-state resistance RDS(on) VGS=10 V, ID=80 A - 3.5 4.7 mΩ
VGS=10 V, ID=80 A,
SMD version - 3.2 4.4
Values
Rev. 1.0 page 2 2006-03-13
IPB100N06S2L-05
IPP100N06S2L-05
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics2)
Input capacitance Ciss - 5660 - pF
Output capacitance Coss - 1330 -
Reverse transfer capacitance Crss - 360 -
Turn-on delay time td(on) -18-ns
Rise time tr-25-
Turn-off delay time td(off) -98-
Fall time tf-24-
Gate Char
g
e Characteristics2)
Gate to source charge Qgs -1925nC
Gate to drain charge Qgd -5790
Gate charge total Qg- 170 230
Gate plateau voltage Vplateau - 3.3 - V
Reverse Diode
Diode continous forward current2) IS- - 100 A
Diode pulse current2) IS,pulse - - 400
Diode forward voltage VSD
VGS=0 V, IF=80 A,
Tj=25 °C - 0.9 1.3 V
Reverse recovery time2) trr
VR=30 V, IF=IS,
diF/dt=100 A/µs -6580ns
Reverse recovery charge2) Qrr - 125 160 nC
1) Current is limited by bondwire; with an RthJC = 0.5 K/W the chip is able to carry 185 A at 25°C. For detailed
information see Application Note ANPS071E at www.infineon.com/optimos
TC=25 °C
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=30 V, VGS=4.5 V,
ID=100 A, RG=1.3 Ω
VDD=44 V, ID=100 A,
VGS=0 to 10 V
2) Defined by design. Not subject to production test.
3) See diagram 13
4) Qualified at -20V and +20V.
5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0 page 3 2006-03-13
IPB100N06S2L-05
IPP100N06S2L-05
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≥ 4 V ID = f(TC); VGS ≥ 10 V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.05
0.1
0.5
100
10-1
10-2
10-3
10-4
10-5
10-6
10-7
100
10-1
10-2
10-3
tp [s]
ZthJC [K/W]
0
50
100
150
200
250
300
350
0 50 100 150 200
TC [°C]
Ptot [W]
0
20
40
60
80
100
120
0 50 100 150 200
TC [°C]
ID [A]
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
VDS [V]
ID [A]
Rev. 1.0 page 4 2006-03-13
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5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = (ID); Tj = 25 °C
parameter: VGS parameter: VGS
7 Typ. transfer characteristics 8 Typ. Forward transconductance
ID = f(VGS); VDS = 6V gfs = f(ID); Tj = 25°C
parameter: Tjparameter: gfs
2.5 V
3 V
3.5 V
4 V
10 V
0
50
100
150
200
250
300
0246810
VDS [V]
ID [A]
-55 °C
25 °C
175 °C
0
20
40
60
80
100
120
140
160
180
200
1234
VGS [V]
ID [A]
0
50
100
150
200
250
300
0 50 100 150 200
ID [A]
gfs [S]
3 V
3.5 V
4 V
4.5 V
10 V
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120
ID [A]
RDS(on) [mΩ]
Rev. 1.0 page 5 2006-03-13
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9 Typ. Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(ON) = f(Tj)VGS(th) = f(Tj); VGS = VDS
parameter: ID = 80 A; VGS = 10 V parameter: ID
11 Typ. capacitances 12 Typical forward diode characteristicis
C= f(VDS); VGS = 0 V; f = 1 MHz IF = f(VSD)
parameter: Tj
25 °C
175 °C
103
102
101
100
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSD [V]
IF [A]
Ciss
Coss
Crss
104
103
102
0 5 10 15 20 25 30
VDS [V]
C [pF]
270 µA
1350 µA
0
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
Tj [°C]
VGS(th) [V]
0
2
4
6
8
10
-60 -20 20 60 100 140 180
Tj [°C]
RDS(on) [mΩ]
Rev. 1.0 page 6 2006-03-13
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13 Typical avalanche energy 14 Typ. gate charge
EAS = f(Tj)VGS = f(Qgate); ID = 100 A pulsed
parameter: ID
15 Typ. drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS) = f(Tj); ID = 1 mA
50 A
60 A
80 A
0
200
400
600
800
1000
1200
1400
0 50 100 150 200
Tj [°C]
EAS [mJ]
V
GS
Q
gate
Q
gs
Q
gd
Q
g
V
GS
Q
gate
Q
gs
Q
gd
Q
g
11 V 44 V
0
2
4
6
8
10
12
0 50 100 150 200
Qgate [nC]
VGS [V]
46
48
50
52
54
56
58
60
62
64
66
-60 -20 20 60 100 140 180
Tj [°C]
VBR(DSS) [V]
Rev. 1.0 page 7 2006-03-13
IPB100N06S2L-05
IPP100N06S2L-05
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
©
Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0 page 8 2006-03-13
