ES1A
THRU
ES1M
1 Amp Super Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
Features
x High Temp Soldering: 260qC for 10 Seconds At Terminals
x Superfast Recovery Times For High Efficiency
Maximum Ratings
x Operating Temperature: -50qC to +150qC
x Storage Temperature: -50qC to +150qC
x Maximum Thermal Resistance; 15qC/W Junction To Lead
MCC
Part
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
Maximum
RMS
Voltage
Maximum
DC
Blocking
Voltage
ES1A ES1A 50V 35V 50V
ES1B ES1B 100V 70V 100V
ES1C ES1C 150V 105V 150V
ES1D ES1D 200V 140V 200V
ES1G ES1G 400V 280V 400V
ES1J ES1J 600V 420V 600V
ES1K ES1K 800V 560V 800V
ES1M ES1M 1000V 700V 1000V
Electrical Characteristics @ 25qC Unless Otherwise Specified
Average Forward
Current
IF(AV) 1.0A Ta= 75qC
Peak Forward Surge
Current
IFSM 30A 8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
ES1A-D
ES1G-J
ES1K~M
VF.975V
1.35V
1.70V
IFM = 1.0A;
TJ = 25qC*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
IR5PA
100PA
TJ = 25qC
TJ = 100qC
Maximum Reverse
Recovery Time
ES1A-D
ES1G-K
ES1M
Trr 50ns
75ns
100ns
IF=0.5A, IR=1.0A,
Irr=0.25A
Typical Junction
Capacitance
CJ 45pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 200 Psec, Duty cycle 2%
H
J
E
F
G
A
B
D
C
Cathode Band
0.070”
0.090”
0.085”
SUGGESTED SOLDER
PAD LAYOUT
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .078 .116 1.98 2.95
B .067 .089 1.70 2.25
C .002 .008 .05 .20
D --- .02 --- .51
E .035 .055 .89 1.40
F .065 .096 1.65 2.45
G .205 .224 5.21 5.69
H .160 .180 4.06 4.57
J .100 .112 2.57 2.84
DO-214AC
(HSMA) (High Profile)
omponents
20736 Marilla Street Chatsworth
!"#
$% !"#
MCC
Revision: 7 2007/06/19
TM
Micro Commercial Components
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
www.mccsemi.com
1 of 4
ES1A thru ES1M
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
Figure 2
Forward Derating Curve
015025 50 75 100
0
.2
.4
.6
.8
1.0
1.2
1.4
Single Phase, Half Wave
60Hz Resistive or Inductive Load
Amps
°C
125
1.6
1.8
2.0
2.2
2.4
Figure 3
Junction Capacitance
.1 .2 1.4 2 10 20 404 100 200
1
2
6
10
20
100
Junction Capacitance - pF versus
Reverse Voltage - Volts
pF
Volts
60
40
4
400 1000
TJ=25°C;f=1MHZ
MCC
Revision: 7 2007/06/19
TM
Micro Commercial Components
www.mccsemi.com
2 of 4
Figure 1
Typical Forward Characteristics
0.1
1.0
.01
10
50
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
.6 .8 1.0 1.2 1.4 1.6 1.8 2.0
3.0
ES1A~ES1D
ES1G~ES1J
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
ES1K~ES1M
ES1A thru ES1M
trr
+0.5A
0
-0.25
-1.0
1cm
Set Time Base for 20/100ns/cm
25Vdc
1Ω
50Ω10Ω
Oscilloscope
Note 1
Pulse
Generator
Note 2
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
1 100
4
0
5
10
15
8
Figure 4
Peak Forward Surge Current
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
Amps
Cycles
2610 20 60 80
40
20
25
30
MCC TM
Micro Commercial Components
0.1
1.0
10
100
0 40 80 120
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
T = 100°C
j
T = 25°C
j
Figure 5
Typical Reverse Characteristics
Figure 7
New SMA Assembl
y
Round Lead
Process
Revision: 7 2007/06/19
www.mccsemi.com
3 of 4
MCC
Revision: 7 2007/06/19
TM
Micro Commercial Components
www.mccsemi.com
4 of 4
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***IMPORTANT NOTICE***
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and will agree to hold Micro Commercial Components Corp .and all the companies whose
