NTE2345 (NPN) & NTE2346 (PNP)
Silicon Complementary Transistors
General Purpose Darlington, Power Amplifier
Description:
The NTE2345 (NPN) and NTE2346 (PNP) are silicon complementary Darlington transistors in an
SOT−82 type package designed for use in audio output stages and general amplifier and switching
applications..
Features:
DHigh DC Current Gain: hFE = 750 (Min) @ IC = 3A, VCE = 3V
DJunction Temperature to +150°C
Absolute Maximum Ratings:
Collector−Emitter Voltage, VCEO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector−Base Voltage, VCBO 120V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter−Base Voltage, VEBO 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 6A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (tp ≤ 10ms, δ ≤ 0.1) 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD60W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, TJ+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg −65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction−to−Case, RthJC 2.08K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction−to−Ambient, RthJA 100K/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. NTE2346 is a discontinued device and no longer available.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO IE = 0, VCBO = 120V − − 0.2 mA
IE = 0, VCBO = 120V, TJ = +150°C− − 2mA mA
ICEO IB = 0, VCEO = 60V − − 0.5 mA
Emitter Cutoff Current IEBO IC = 0, VEBO = 5V − − 5 mA
DC Current Gain hFE IC = 500mA, VCEO = 3V, Note 1 −2700 −
IC = 3A, VCEO = 3V, Note 2 750 − −
IC = 6A, VCEO = 3V, Note 2 −400 −
Note 2. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.