25C D) MM 4235605 0004363 4 MMSIEG |: NPN Silicon Epibase Transistors [~33-ll BD 433 BD 435 SIEMENS AKTIENGESELLSCHAF OD BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package (12 A 3 DIN 41 869, sheet 4). The collector is electrically connected ta the metallic mounting area. The transistors are particularly suitable for use in push-pull output stages, driver stages as well as for general AF applications. Their complementary types are the PNP transistors BD 434, BD 436, BD 438, BD 440, and BD 442. Type Ordering code BD 433 Q62702-D201 BD 433/BD 434 paired | Q62702-D217 BD 435 Q62702-D203 BD 435/BD 436 paired | Q62702-D218 BD 437 Q62702-D212 ts BD 437/BD 438 paired | 062702-D219 fers z BD 439 62702-0280 ~ BD 439/BD 440 paired | 062702-D284 Poh BD 441 Q62702-D285 BD 441/BD 442 paired 062702-D325 Approx. weight0.5 g Dimensions in mm Mica washer Q62902-B62 Transistor fixing with M 3 screw Starting Spring. washer ire. ehould housed. spring A3 DIN 137 Q62902-B63 1} ifa 80 u mica washer (ungreased) is used, the thermal resistance increases by 8 KAW and in case of a greased one by 4 K/W. Maximum ratings BD 433 | BD 435 | BD 437| BD 439| BD 441 Collector-emitter voltage Vero | 22 32 45 60 80 Vv Collector-emitter voltage Vets | 22 32 45 60 80 Vv Collector-hase voltage Vepo | 22 32 45 60 80 Vv Emitter-base voltage Veso | 5 5 5 5 5 Vv Collector current In |4 4 4 14 4 A Collector peak current lou 17 7 7 7 7 A Emitter peak current Teng | 7 7 7 7 7 A Base current Ih 1 1 1 1 1 A Junction temperature Tj 150 150 150 {150 150 c Storage temperature range Tetg -5 to+150 C Total power dissipation | | | | (Tease S 25C; Veg 12) Pro | 36 36 36 36 36 Ww Thermal resistance Junction to ambient air Pia $100 |s100 |s100 \eae $100 |K/W Junction to mounting area Rinuctt $3,5 $3,5 33,5 $3,5 $3,5 K/W - 409 1786 8-03 [ wah achat an Tee Ballpen yeBdedin sited le "2e5C D MM 6235605 COO43b4 & mESIEG ~ 25 04364 D BD 433 BD 435 SIEMENS AKTIENGESELLSCHAF BD 437 BD 439 BD 441 Static characteristics (T,4,9 = 25C) BD 433) BD 435; BD 437| BD 439) BD 441 Collector-emitter breakdown voltage (Ig = 1000 mA) Visriceo | > 22 >32 >45 >60 >80 Vv Collector-emitter breakdown voltage (Jc = 100 yA) Vienices | >22 | >32 >45 >60 >80 Vv Collector-base breakdown voltage (Jc = 100 pA) Viericso } > 22 >32 >45 >60 >80 Vv Emitter-base breakdown voltage (Je = 1 mA) Vieryeso | >5 >5 >5 >5 >5 Vv Collector cutoff current (Vcg = 22 V} Tego <100 - - - - pA Collector cutoff current (Veg = 32 V) lego - <100 - - - pA Collector cutoff current (Veg = 45 V) Icpo - - <100 - - pA Collector cutoff current (Veg = 60 Vv) Ieso - - - <100 = BA Collector cutoff current (Veg = 80 V)} Tego - - - ~ <100 pA Collector cutoff current (Vcg = 10 V; Tamb = 150C) Jogo <1 <1 <1 <1 <1 mA Collector cutoff current (Vee = Vee max? Tamb= 150C} Iggo <3 <3 <3 <3 <3 mA Base-emitter forward voltage (lo = 2A; VcE=1V) Vee <i <1 <1.2 <1.5 <1.5 Vv Base-emitter forward voltage (le = 3A: Vee = 1 V) Vee ~ - <1.3 <1.6 <1.6 Vv Collector-emitter saturation voltage (Jp = 2 A)?) Veceat | <0.8 | <O08 | - - - Vv Collector-emitter saturation spannung (Jp =24;Ip=0.2A) Veesat <0.5 <0.5 <0.6 <0.8 <0.8 Vv Collector-emitter saturation voltage (Ic=3A;lp=0.3A) Veesat ~ - <0.7 <0.9 <0.9 Vv DC current gain (Ig = 10 mA; Veg = 5 V) hee >40 >40 >30 >20 >15 - (le = 500 mA; Vee =1 v)2) hee >85 >85 >85 >40 >40 - (Ie = 2 A: Veg = 1 V) hee >50 >50 >40 >25 >15 - 1) For the characteristic which passes through the point /c = 2.2 mA and VcE = 1V at constant base current. 2) Available as matching pairs with BD 434, 8D 436, BD 438, BD 440, and BD 442. Condition for matching pairs hFE1/MFEQ < 1.41. 410 - oe 178? = B=04 - _ 250 043565 SIEMENS AKTIENGESELLSCHAF Dynamic characteristics (Tcase = 25C) _ 25C D m@ 6235605 OO04365 6 MBSIEG , Tt 33-// v. - BD 433 BD 435 BD 437 BD 439 BD 441. | ep 433| BD 436 | BD 437| BD 439| BD 441 | Transition frequency (Up = 0.25 A; Voce =1V: f =1MHz) fr >3 Cutoff frequency in common emitter configuration (Ic = 0.25 A; Voge = 1V) fhte | >20 Total perm. power dissipation versus temperature Prot = f (Tease): Vee = 0 to 12 V BD 433, BD 435, BD 437, W 8D 439, BD 441 Veg 20 fa 12Y 0 50 00 150C Tego 1788 B-05 >3 >20 >3 >3 >3 MHz >20 >20 >20 kHz Permissible pulse load tawe = f (0; = parameter K BD 433, BD 435, BD 437, BD 439, BD 441 2 10 fine i 411 mn Hah aia | a Tagan Ak mee alan aren wines25 D MM 8235605 GOO4abb TmMSIEG 7+ SGF_// SIEMENS AKTIENGESELLSCHAF 04366 D- BD 433 BD 435 Permissible operating range Ie = f (Vee); Tease = 25C, V=O BD 433, BD 435, BD 437 W 500 300 150 100 50 36 30 20 16 10 ,. 10! vy > Vee DC current gain hee = f (ig); Vee = 14; Teasg = parameter BD 433. BD 435, BD 437, , 8D 439, BD 441 10 beg: 10! 10 _rl, AI2 ener 1789 B-06 BD 437 BD 439 BD 441 i ee hand thas Permissible operating range Ig = (Vee): Tease = 25C, v= 0 A 8D 439, BD 441 v to BD 4 BD 441 Ta 108 10! 02v Me Collector cutoff current versus temperature ogg =f (Tease) Veg = Voumax 8D 433, BD 435, BD 437, mA BD 439, 8D 441 Limit value 0 50 100 150C Ieasg[rr o5C D MM 8235605 0004347 1 MESIEG 5 a (04368 . SIEMENS AKTIENGESELLSCHAF . 7~-33-1/ BD 433 BD 435 Collector current fo = f (Vee): Vee = 2.Vi; Tease = 25 8D 433, 8D 435, 8D 437, mA BD 439, BD 441 8 05 1 SY ___ Ver Output characteristics Ic = f (Vce) fg = parameter (common emitter configuration) BD 433, BD 436, 8D 437, A BD 439, BD 441 5 ty 4 3 2 1 0 0 10 20V > Ve "4790 B-07 BD 437 BD 439 BD 441 Collector-emittar saturation voltage Voesae = Ufc); Mee = 10: Tam = 26C 8D 433, BD 435, BD 437, mA BD 439, 8D 441 0 05 : Vv > Kean Transition frequency f; = f (fc) Tease = 25C BD 433, BD 436, 8D 437, Miz BD 439, BD 441 30 a 20 i, 413 4 0 1 10 18 10 OA Vo nek treet prea aren nae dias vt yom 1 etme MEBANE oon at