2N2880-220M
MECHANICAL DATA
Dimensions in mm (inches)
16.38
16.89
13.39
13.64
10.41
10.92
12.70
19.05
2.54
BSC
10.41
10.67
3.56
3.81Dia.
0.70
0.90
2.65
2.75
0.89
1.14
4.70
5.00
123
TO–220M (TO-257AB) – Metal Package
NPN POWER
SILICON TRANSISTOR
FOR HI–REL
APPLICATIONS
FEATURES
• HERMETICALLY SEALED TO–220 METAL
PACKAGE
• ALL LEADS ISOLATED FROM CASE
• CECC, JAN AND SPACE LEVEL
SCREENING OPTIONS AVAILABLE
Pad 1 – Base Pad 2 – Collector Pad 3 – Emitter
VCBO Collector – Base Maximum Voltage
VCEO Collector – Emitter Maximum Voltage
VEBO Emitter – Base Maximum Voltage
ICMaximum Continious Collector Current
IBMaximum Continious Base Current
PTOT Power Dissipation @ TC= 100°C
Linear Derating Factor > TC= 100°C
TJ, Tstg Operating and Storage Temperature Range
RθJC Thermal Resistance Junction to Case
110V
80V
8.0V
5.0A
500mA
20W
0.2W/°C
–65°C to 200°C
5.0°C/W max.
ABSOLUTE MAXIMUM RATINGS (TC= 25°C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5550
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
2N2880-220M
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Document Number 5550
Issue 2
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Parameter Test Conditions Min. Typ. Max. Unit
Collector – Emitter Cut-off Current
Collector – Base Cut-off Current
Emitter – Base Cut-off Current
Collector – Emitter Breakdown Voltage
Collector – Base Breakdown Voltage
Base – Emitter Breakdown Voltage
Base – Emitter Saturation Voltage
Collector – Emitter Saturation Voltage
DC Current Gain
High Frequency Forward Current Gain
Open Circuit Output Capacitance
Rise Time
Storage Time
Fall Time
VCE = 50V IB= 0
VCE = 80V IE= 0
VEB = 4V IC= 0
IC= 100mA
IC= 10µA
IE= 10µA
IC= 1.0A IB= 0.1A
IC= 1.0A IB= 0.1A
IC= 5.0A IB= 0.5A
IC= 1.0A VCE = 5V
IC= 0.5A VCE = 5V
IC= 1.0A VCE = 10V
f = 10MHz
f = 1MHz VCB = 10V
IC= 1.0A
VCC = 20V
IB1= 100mA
100
0.2
0.2
80
100
8.0 1.2
0.25
2.0
40 120
15
3.0
150
0.3
2.0
0.35
µA
V
—
—
pF
µs
ICEO
ICBO
IEBO
V(BR)CEO
V(BR)CEO
V(BR)EBO
VBE(sat)
VCE(sat)
hFE
hfe
Cobo
tr
ts
tf
ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
*Pulsed : Pulse duration ≤300 µs , duty cycle ≤2.0%
