Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Lower Gate Charge BVDSS -100V
▼ Simple Drive Requirement RDS(ON) 180mΩ
▼ Fast Switching Characteristic ID-2.7A
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient350 ℃/W
Data and specifications subject to change without notice
Thermal Data
Parameter
Continuous Drain Current3, VGS @ 10V -2.1
Pulsed Drain Current1-10
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
AP18P10GM-HF
Rating
201007221
Halogen-Free Product
1
-100
+20
-2.7
2.5
-55 to 150
-55 to 150
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The SO-8 package is widely preferred for commercial-industrial surface
mount applications and suited for low voltage applications such as DC/DC
converters.
SSSG
DDDD
SO-8
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -100 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-2A - - 180 mΩ
VGS=-4.5V, ID=-1A - - 210 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-2A - 8.4 - S
IDSS Drain-Source Leakage Current VDS=-80V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=-2A - 14 22.4 nC
Qgs Gate-Source Charge VDS=-50V - 4 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 7 - nC
td(on) Turn-on Delay Time2VDS=-50V - 10 - ns
trRise Time ID=-1A - 5 - ns
td(off) Turn-off Delay Time RG=3.3Ω-55-ns
tfFall Time VGS=-10V - 22 - ns
Ciss Input Capacitance VGS=0V - 1500 2400 pF
Coss Output Capacitance VDS=-25V - 120 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 70 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-2A, VGS=0V - - -1.3 V
trr Reverse Recovery Time2IS=-2A, VGS=0V, - 40 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 75 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP18P10GM-HF
2
A
P18P10GM-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
10
20
30
40
0 4 8 12 16 20 24
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TA=25oC-10V
-7.0V
-5.0V
-4.5V
VG=- 3.0V
0
4
8
12
16
20
024681012
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
-10V
-7.0V
-5.0V
-4.5V
VG=- 3.0V
TA=150oC
120
130
140
150
160
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-2A
TA=25
℃
0.4
0.8
1.2
1.6
2.0
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=-2A
VG=-10V
0
2
4
6
8
0 0.2 0.4 0.6 0.8 1 1.2 1.4
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25oCTj=150oC
0.4
0.6
0.8
1
1.2
1.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
AP18P10GM-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
-4.5V
QGS QGD
QG
Charge
0
2
4
6
8
10
0 10203040
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
I
D= -2A
VDS = -50V
0
400
800
1200
1600
2000
2400
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
10
100
0.01 0.1 1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
TA=25 oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this area
limited by RDS(ON)
