DATA SH EET
Product specification
Supersedes data of 1998 Aug 06 1999 Apr 08
DISCRETE SEMICONDUCTORS
BC849; BC850
NPN general purpose transistors
b
ook, halfpage
M3D088
1999 Apr 08 2
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
FEATURES
•Low current (max. 100 mA)
•Low voltage (max. 45 V).
APPLICATIONS
•General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complements: BC859 and BC860.
MARKING
Note
1. ∗= p : Made in Hong Kong.
∗= t : Made in Malaysia.
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
BC849B 2B∗BC850B 2F∗
BC849C 2C∗BC850C 2G∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BC849 −30 V
BC850 −50 V
VCEO collector-emitter voltage open base
BC849 −30 V
BC850 −45 V
VEBO emitter-base voltage open collector −5V
I
Ccollector current (DC) −100 mA
ICM peak collector current −200 mA
IBM peak base current −200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 08 3
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =30V −−15 nA
IE= 0; VCB =30V; T
j= 150 °C−−5µA
I
EBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain IC=10µA; VCE =5V;
see Figs 2 and 3
BC849B; BC850B −240 −
BC849C; BC850C −450 −
DC current gain IC= 2 mA; VCE =5V;
see Figs 2 and 3
BC849B; BC850B 200 290 450
BC849C; BC850C 420 520 800
VCEsat collector-emitter saturation
voltage IC= 10 mA; IB= 0.5 mA −90 250 mV
IC= 100 mA; IB=5mA −200 600 mV
VBEsat base-emitter saturation voltage IC= 10 mA; IB= 0.5 mA; note 1 −700 −mV
IC= 100 mA; IB= 5 mA; note 1 −900 −mV
VBE base-emitter voltage IC= 2 mA; VCE = 5 V; note 2 580 660 700 mV
IC= 10 mA; VCE = 5 V; note 2 −−770 mV
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz −2.5 −pF
Ceemitter capacitance IC=i
c= 0; VEB = 500 mV; f = 1 MHz −11 −pF
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz 100 −−MHz
F noise figure IC= 200 µA; VCE =5V; R
S=2kΩ;
f = 10 Hz to 15.7 kHz −−4dB
I
C
= 200 µA; VCE =5V; R
S=2kΩ;
f = 1 kHz; B = 200 Hz −−4dB
1999 Apr 08 4
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
300
100
200
MBH724
10−210−1
hFE
1IC (mA)
10 103
102
VCE = 5 V
BC849B; BC850B.
Fig.3 DC current gain; typical values.
handbook, full pagewidth
0
600
200
400
MBH725
10−210−1
hFE
1IC (mA)
10 103
102
VCE = 5 V
BC849C; BC850C.
1999 Apr 08 5
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 Apr 08 6
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 08 7
Philips Semiconductors Product specification
NPN general purpose transistors BC849; BC850
NOTES
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Printed in The Netherlands 115002/00/05/pp8 Date of release: 1999 Apr 08 Document order number: 9397 750 05529
