G E SOLID STATE Optoelectronic Specifications O1 pe fse7soa1 o019b7a 4 T-41-83 AC Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor The GE Solid State HILAAI HIIAA4 consist of two gallium arsenide infrared emitting diodes connected in inverse parallel and coupled with asilicon photo-transistor in a dual in-line package. These devices are also available in Surface-Mount packaging. FEATURES: @ AC or polarity insensitive inputs Fast switching speeds Built-in reverse polarity input protection @ High isolation voltage @ High isolation resistance 1/0 compatible with integrated circuits q Covered under U.L. component recognition program, reference file E51868 Ee, : jal absolute maximum ratings: (25C) (unless otherwise specified) > Ls| qa aa 3 1 INFRARED EMITTING DIODE 8 Mm 8 Power Dissipation T, = 25C #100 milliwatts al. L Power Dissipation To=25C *100 _ milliwatts e (Tg indicates collector lead temperature 1/32 from case) Input Current (RMS) 60 milliamps Input Current (Peak) +1 = ampere (Pulse width 1ysec, 300 pps) *Derate 1.33mW/C above 25C MILLIMETERS INCHES Pow MAX t MN. | Max. |" a! 538 a ee: .330 | .360 B . Fy . PHOTO-TRANSISTOR 8 | i irae sooner, | Power Dissipation Ta= 25C #300 milliwatts Dp 406; eee OF | ooo | 3 Power Dissipation Tc = 25C ***500 milliwatts , aa. geo | 00 | 110 (Tc indicates collector lead temperature | /32 from case) Rj 7} ae; | Oe) 4 VcEo 30 volts oe 305; 008 | 012 Vcso 70 volts mie. we foe | 16 EBO 5 volts PL oss | a | ov Collector Current (Continuous) 100 milliamps rR | 292: 343 | 116 | 196 s 6.10 | 683 | -240 | 270 aan erate domi oe above 350C TO NSTALLED POSITION LEAD CENTERS : 2. OVERALL INSTALLED DIMENSION. 9. THESE MEASUREMENTS ARE MADE FROM THE SEATING PLANE. 4, FOUR PLACES. TOTAL DEVICE Storage Temperature -55 to 150C Operating Temperature -55 to 100C Lead Soldering Time (at 260C) 10 seconds Surge Isolation Voltage (Input to Output) . 2500V (peak) 1770V ps) Steady-State Isolation Voltage (Input to Output) 1500 (peak) 1060V pas)SOLID STATE ou peWaazsoaa coisas H11AA1-H11AA4 Optoelectronic Specifications T'4-F3 individual electrical characteristics (25C) (untess otherwise specified) INFRARED EMITTING | syMBOL|MAX] UNITS | PHOTO-TRANSISTOR | SYMBOL | MIN.|MAX. | UNITS Input Voltage Ve Breakdown Voltage VpRyCEO 30 volts (Ip =+ 10 mA) (Uc = 10mA, Ip = 0) H11AAI1,3,4 1.5 | volts H11AA2 1.8 | volts Breakdown Voltage Viprycso 70 volts (Ig = 100K, Ip = 0) Capacitance Cy 100 | picofarads | Breakdown Voltage Vipr)EBO 5 volts (V = 0, F = 1 MHz) (ip = 100A, Ip = 0) . Collector Dark Current IcEo (Vcg = 10V, Ip = 0) H1fLAA1, 3,4 100 nanoamps HIIAA2 200 nanoamps coupled electrical characteristics (25C) (unless otherwise specified) MIN. | MAX. UNITS j = =t HI1AA4 100 percent Current Transfer Ratio (Vog = 10V, Ip == 10mA) HLIAAS 50 percent HIIAAI 20 percent Hi1AA2 10 percent Saturation Voltage - Collector to Emitter (Iggg70.5mA, Ip= t10mA) 0.4 volts Current Transfer Ratio Symmetry: Iopg9(Vog7!0V, Ip=l OmA) Note 2 : EON CE Tono(Vcp=10V, Ip=10mA) HII1AAI, 3, 4 0.33} 3.0 Isolation Resistance (Input to Output Voltage = 500Vpc. See Note 1) 100 gigaohms Note 1: Tests of input to output isolation current resistance, and capacitance are performed with the input terminals {diode} shorted together and the output terminals {transistor} shorted together PEAK OUTPUT i Th all ies [tomal ot . a z I 44 @ = fg = [toma] a tg MINIMUM e PEAK OUTPUT zg 3 2 io gt & a a ceqhOUTPUT WAVE FORM (SEE NOTE 2) u AT Vope5 Zz cE es Qo = 03 aor a1 1 10 10 Vog - COLLECTOR TO EMITTER VOLTAGE - VOLTS Note 2: The H11AA1 specification guarantees the maximum peak output current will be no more than three times the minimum peak output current at Ip = 10mA Tp INPUT WAVE FORM 223G E SoLID STATE Optoelectronic Specifications on Wj 3a7soa1 oo1s7oo 9 Wl H11AA1-H11AA4 TYPICAL CHARACTERISTICS V -OaPUT VOLTADE VOR 1. INPUT CHARACTERISTICS NORMALIZED TO: Von =10 Ta =25C ip =o ICEO ~ NORMALIZEO DARK CURRENT 7S Ta- AMBIENT TEMPERATURE C 9. DARK Ice CURRENT VS TEMPERATURE Igg(ON) ~ NORMALIZED OUTPUT CURRENT . 1 7 You - COLLECTOR TO EMITTER VOLTAGE ~ VOLTS ~ y : 65. OUTPUT CHARACTERISTICS 224 T'4/:%3 ~ 10.0 z uw zc 5 10) a 4 Bo a c 8 3 $0.01 & 9 z i O g 0.004 NORMALIZED TO: yg eerie Vcg= 10 VOLTS a ear FH = 10 mA 0.0001 CP [Pililta =25 2 ee 4 68 2 4 68 on 10 10 100 Ip- INPUT CURRENT~ mA 2. OUTPUT CURRENT VS INPUT CURRENT IcEO NORMALIZED OUTPUT CURRENT NORMALIZED TO: Veg =10V ip = -50 -25 oO 25 50 TS 100 Ta- AMBIENT TEMPERATURE - C 4, OUTPUT CURRENT VS TEMPERATURE NORMALIZED TO:: Vog=10V ip =10 Rpe= igen NORMALIZED OUTPUT CUARENT 10K 100 K RgE-SASE RESISTOR - KO 6. OUTPUT CURRENT VS BASE EMITTER RESISTANCEG E SOLID STATE ol pesarsoa1 ao1s7o1 0 & HITAA1-H11AA4 ptoelectronic Specifications fe . H11AA APPLICATIONS T'4)-&3 LOAD MONITOR AND ALARM POWER SWITCH | . MONITOR In many computer controlled systems where 120 VAC 10 A AC power is controlled, load dropout due to " LOAD filament burnout, fusing, etc. or the opposite situation - load power when uncalled for due to switch failure can cause serious systems or safety problems. This circuit provides a simple 033 n AC power monitor which lights an alarm lamp , and provides a 1 input to the computer control in either of these situations while +5V . THIIAA maintaining complete electrical isolation be- tween the logic and the power system. Note that for other than resistive loads, phase angle correction of the monitoring voltage - LED divider is required. LIGHT RING DETECTOR O.2uf IK pocccco 4 oeVWv | + In many telecommunications applications it is desirable to detect the presence of a ring | signal in a system without any direct electrical 86 Vac = C contact with the system. When the 86 Vae ring signal is applied, the output transistor of | the HIIAA is turned on indicating the presence | of a ring signal in the isolated telecommuni- oo . 2 cations system. UPS SOLID STATE TURN-ON SWITCH BATTERY Interruption of the 120 VAC power line turns off the H11AA, allowing C to charge and turn on the 2N5308-D45H8 combination which activates the auxiliary power supply. on NORE This system features low standby drain, isola- 2N5308 STARTER tion to prevent ground loop problems and the capability of ignoring a fixed number of drop- ped cycles by choice of the value of C. D45H8 225