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FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
1
July 2013
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
Bottom Top
Pin 1
D
DDD
G
SSS
Power 56
FDMS8570SDC
N-Channel PowerTrench® SyncFETTM
25 V, 60 A, 2.8 mΩ
Features
Dual CoolTM PQFN package
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 28 A
Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 25 A
High performance technology for extremely low rDS(on)
SyncFETTM Schottky Body Diode
RoHS Compliant
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and package technologies have
been combined to offer the lowest rDS(on) while maintaining
excellent switching performance by extremely low Junction-to-
Ambient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol Parameter Ratings Units
VDS Drain to Source Voltage 25 V
VGS Gate to Source Voltage 12 V
ID
Drain Current -Continuous (Package limited) TC = 25 °C 60 A -Continuous TA = 25 °C (Note 1a) 28
-Pulsed 100
EAS Single Pulse Avalanche Energy (Note 3) 45 mJ
PDPower Dissipation TC = 25 °C 59 W
Power Dissipation TA = 25 °C (Note 1a) 3.3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
RθJC Thermal Resistance, Junction to Case (Top Source) 4.4
RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81
RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16
RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23
RθJA Thermal Resistance, Junction to Ambient (Note 1k) 11
Device Marking Device Package Reel Size Tape Width Quantity
10DC FDMS8570SDC Power 56 13’’ 12 mm 3000 units
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
2
Electrical Characteristics TJ = 25 °C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Charac teristics
Symbol Parameter Test Conditions Min Typ Max Units
BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient ID = 10 mA, referenced to 25 °C 23 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA
IGSS Gate to Source Leakage Current VGS = +12 V/-8 V, VDS = 0 V ±100 nA
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.5 2.2 V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient ID = 10 mA, referenced to 25 °C -3 mV/°C
rDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 28 A 2.1 2.8 mΩVGS = 4.5 V, ID = 25 A 2.4 3.3
VGS = 10 V, ID = 28 A, TJ = 125 °C 2.9 3.9
gFS Forward Transconductance VDS = 5 V, ID = 28 A 215 S
Ciss Input Capacitance VDS = 13 V, VGS = 0 V,
f = 1 MHz
2825 pF
Coss Output Capacitance 662 pF
Crss Reverse Transfer Capacitance 94 pF
RgGate Resistance 0.8 Ω
td(on) Turn-On Delay Time VDD = 13 V, ID = 28 A,
VGS = 10 V, RGEN = 6 Ω
11 ns
trRise Time 4ns
td(off) Turn-Off Delay Time 33 ns
tfFall Time 3ns
QgTotal Gate Charge VGS = 0 V to 10 V VDD = 13 V,
ID = 28 A
42 nC
QgTotal Gate Charge VGS = 0 V to 4.5 V 22 nC
Qgs Gate to Source Gate Charge 6.4 nC
Qgd Gate to Drain “Miller” Charge 4.4 nC
VSD Source to Drain Diode Forward Voltage VGS = 0 V, IS = 2 A (Note 2) 0.6 0.8 V
VGS = 0 V, IS = 28 A (Note 2) 0.8 1.2
trr Reverse Recovery Time IF = 28 A, di/dt = 300 A/μs 22 ns
Qrr Reverse Recovery Charge 19 nC
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
3
Thermal Characteristics
RθJC Thermal Resistance, Junction to Case (Top Source) 4.4
°C/W
RθJC Thermal Resistance, Junction to Case (Bottom Drain) 2.1
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 38
RθJA Thermal Resistance, Junction to Ambient (Note 1b) 81
RθJA Thermal Resistance, Junction to Ambient (Note 1c) 27
RθJA Thermal Resistance, Junction to Ambient (Note 1d) 34
RθJA Thermal Resistance, Junction to Ambient (Note 1e) 16
RθJA Thermal Resistance, Junction to Ambient (Note 1f) 19
RθJA Thermal Resistance, Junction to Ambient (Note 1g) 26
RθJA Thermal Resistance, Junction to Ambient (Note 1h) 61
RθJA Thermal Resistance, Junction to Ambient (Note 1i) 16
RθJA Thermal Resistance, Junction to Ambient (Note 1j) 23
RθJA Thermal Resistance, Junction to Ambient (Note 1k) 1 1
RθJA Thermal Resistance, Junction to Ambient (Note 1l) 13
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminu m Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 45 mJ is based on starting TJ = 25 °C, L = 0.4 mH, IAS = 15 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 23.8 A.
a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
G
DF
DS
SF
SS
G
DF
DS
SF
SS
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
4
Typical Characteristics TJ = 25 °C unless otherwise noted
Figure 1.
0 0.3 0.6 0.9 1.2 1.5
0
20
40
60
80
100
VGS = 3.5 V
VGS = 3 V
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 2.5 V
VGS = 10V
PULSE DU R ATION = 80 μs
DUTY CYCLE = 0.5% MAX
On Region Characteristics Figure 2.
020406080100
0.5
0.9
1.8
2.7
3.6
4.5
VGS = 2.5 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOU RC E ON-RESISTANC E
ID, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
VGS = 10 V
Normalized On-Resistance
vs Drain Current and Gate Voltage
Figure 3. Normalized On Resistance
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 28 A
VGS = 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
TJ, JUNCTION TEMPER ATURE (oC)
vs Junction Te mperature Figure 4.
2345678910
1
2
3
4
5
6
7
8
9
TJ = 125 oC
ID = 28 A
TJ = 25 oC
VGS, GA TE TO SOU RC E VO LTA G E (V)
rDS(on), DRAIN T O
SOURCE ON-RESISTANCE (mΩ)
PULSE D U RATION = 80 μs
DUTY CYCLE = 0.5% MA X
On-Resistance vs Gate to
Source Voltage
Figure 5. Transfer Characteristics
1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
TJ = 150 oC
VDS = 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% M A X
TJ = -55 oC
TJ = 25 oC
ID, DRAIN CURRENT (A)
VGS, GATE TO S O URC E VOLTAGE (V)
Figure 6.
0.00.20.40.60.81.01.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
VGS = 0 V
IS, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORW ARD VOLTA G E (V)
Source to Drain Diode
Forward Voltage vs Source Current
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
5
Figure 7.
0 1020304050
0
2
4
6
8
10 ID = 28 A
VDD = 15 V
VDD = 10 V
VGS, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 13 V
Gate Charge Characteristics Figure 8.
0.1 1 10 30
10
100
1000
10000
f = 1 MHz
VGS = 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
Coss
Ciss
Capacitance vs Drain
to Source Voltage
Figure 9.
0.001 0.01 0.1 1 10 100 1000
1
10
100
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE (ms)
IAS, AVALANCHE CURRENT (A)
Unclam pe d I nd uc ti ve
Switching Capability Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
25 50 75 100 125 150
0
20
40
60
80
100
120
Limited by Package
VGS = 4.5 V
RθJC = 2.1 oC/W
VGS = 10 V
ID, DRAIN CURRENT (A)
TC, CASE TEMPERATURE (oC)
Figure 11. Forward Bias Safe
Operating Area
0.01 0.1 1 10 100
0.01
0.1
1
10
100
200
100 us
1 ms
1 s
10 ms
DC
10 s
100 ms
ID, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
TH IS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 81 oC/W
TA = 25 oC
Figure 12.
10-4 10-3 10-2 10-1 110
100 1000
0.1
1
10
100
1000
10000
SINGLE PULSE
RθJA = 81 oC/W
TA = 25 oC
P(PK), PEAK TRANSIENT POW ER (W )
t, PULSE WIDTH (s)
Single Pulse Maximum
Power Dissipation
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
6
Figure 13. Junction-to-Ambient Transient Thermal Respon se Curve
10-4 10-3 10-2 10-1 110
100 1000
0.0001
0.001
0.01
0.1
1
SINGLE PULSE
RθJA = 8 1 oC/W
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
t, RECTANGULAR PULSE DURA TION (s)
D = 0.5
0.2
0.1
0.0 5
0.0 2
0.0 1
2
PDM
t1t2
NOTES:
DUTY FA CTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
7
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8570SDC.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0 50 100 150 200 250
-5
0
5
10
15
20
25
30
di/dt = 300 A/μs
CURRENT (A)
TIME (ns)
0 5 10 15 20 25
10-6
10-5
10-4
10-3
10-2
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
IDSS, REVERSE LEAKAGE CURRENT (A)
VDS, REVER SE VO LTA G E (V)
Typical Characteristics (continued)
Figure 14. FDMS85 70SDC SyncFETTM body
diode reverse recovery ch aracteristic Figure 15. SyncFETTM body diode reverse
leakage versus drain-source voltage
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
8
Dimensional Outline and Pad Layout
FDMS8570SDC N-Channel PowerTrench® SyncFETTM
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C2 www.fairchildsemi.com
9
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intended to be an exhaustive list of all such trademarks.
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
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THEREIN, WHICH COVERS THESE PRODUCTS.
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As used here in:
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2. A critical component in any component of a life support, device, or
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the failure of the life support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
2Cool™
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
Green Bridge™
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speaker s Sound L ouder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver™
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC®
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
™
Datasheet Identifi cation Product Status Definition
Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary F irst Production Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconduct or reserves the right to make changes at any time without
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make changes at any time without notice to improve the design.
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Rev. I64
tm
®
