SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Features Applications Any frequency between 1 and 80 MHz accurate to 6 decimal places WiFi, 3G, LTE, SDI, Ethernet, SONET, DSL 100% pin-to-pin drop-in replacement to quartz-based (VC)TCXO Telecom, networking, smart meter, wireless, test instrumentation Frequency stability as low as 5 ppm. Contact SiTime for tighter stability options Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz) Voltage control option with pull range from 12.5 ppm to 50 ppm LVCMOS compatible output with SoftEdgeTM option for EMI reduction Voltage control, standby, output enable or no connect modes Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm Outstanding silicon reliability of 2 FIT, 10 times better than quartz Pb-free, RoHs and REACH compliant Electrical Characteristics Parameter Output Frequency Range Initial Tolerance Symbol Min. Typ. Max. Unit f 1 - 80 MHz Condition F_init -1 - 1 ppm At 25C after two reflows Stability Over Temperature F_stab -5 - +5 ppm Over operating temperature range at rated nominal power supply voltage and load. (see ordering codes on page 6) Supply Voltage F_vdd - 50 - ppb 10% Vdd (5% for Vdd = 1.8V) 15 pF 10% of load Contact SiTime for tighter stability options. Output Load F_load - 0.1 - ppm First year Aging F_aging -2.5 - +2.5 ppm 25C -4.0 - +4.0 ppm 25C 10-year Aging Operating Temperature Range Supply Voltage Pull Range T_use Vdd -20 - +70 C Extended Commercial -40 - +85 C Industrial 1.71 1.8 1.89 V Contact SiTime for any other supply voltage options. 2.25 2.5 2.75 V 2.52 2.8 3.08 V 2.70 3.0 3.3 V 2.97 3.3 3.63 V PR 12.5, 25, 50 ppm Upper Control Voltage VC_U Vdd-0.1 - - V Control Voltage Range VC_L - - 0.1 V Control Voltage Input Impedance Z_vc 100 - - k Frequency Change Polarity Control Voltage -3dB Bandwidth Current Consumption OE Disable Current Standby Current Duty Cycle LVCMOS Rise/Fall Time - Positive slope All Vdds. Voltage at which maximum deviation is guaranteed. - V_BW - - 8 kHz Idd - 31 33 mA No load condition, f = 20 MHz, Vdd = 2.5V, 2.8V or 3.3V. - 29 31 mA No load condition, f = 20 MHz, Vdd = 1.8V. - - 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled Down - - 30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down I_std - - 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled Down. - - 10 A Vdd = 1.8V. ST = GND, output is Weakly Pulled Down. DC 45 - 55 % All Vdds Tr, Tf - 1.5 2 ns LVCMOS option. Default rise/fall time, All Vdds, 10% - 90% Vdd. I_OD SoftEdgeTM Rise/Fall Time SoftEdgeTM Rise/Fall Time Table ns SoftEdgeTM option. Frequency and supply voltage dependent. Output Voltage High VOH 90% - - Vdd Output Voltage Low VOL - - 10% Vdd Input Voltage High VIH 70% - - Vdd Pin 1, OE or ST Input Voltage Low VIL - - 30% Vdd Pin 1, OE or ST Input Pull-up Impedance Z_in - 100 250 k SiTime Corporation Rev. 1.0 990 Almanor Avenue Sunnyvale, CA 94085 OH = -7 mA, IOL = 7 mA, (Vdd = 3.3V, 3.0V) IOH = -4 mA, IOL = 4 mA, (Vdd = 2.8V, 2.5V) IOH = -2 mA, IOL = 2 mA, (Vdd = 1.8V) (408) 328-4400 www.sitime.com Revised November 12, 2015 SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Electrical Characteristics (continued) Parameter Startup Time OE Enable/Disable Time Resume Time Symbol Min. Typ. Max. Unit Condition T_start - - 10 ms Measured from the time Vdd reaches its rated minimum value T_oe - - 150 ns f = 80 MHz. For other frequencies, T_oe = 100 ns + 3 cycles T_resume - 6 10 ms Measured from the time ST pin crosses 50% threshold T_jitt - 1.7 2 ps f = 10 MHz, Vdd = 2.5V, 2.8V or 3.3V - 1.7 2 ps f = 10 MHz, Vdd = 1.8V - 0.5 1 ps f = 10 MHz, Integration bandwidth = 12 kHz to 20 MHz, All Vdds RMS Period Jitter RMS Phase Jitter (random) T_phj Note: 1. All electrical specifications in the above table are measured with 15pF output load, Contact SiTime for higher drive options. Pin Configuration Pin Symbol Functionality V control 1 [2] Output Enable H or Open : specified frequency output L: output is high impedance. Only output driver is disabled. Standby H or Open[2]: specified frequency output L: output is low (weak pull down). Device goes to sleep mode. Supply current reduces to I_std. VC/OE/ST/NC NC 2 Top View Voltage control VC/OE/ST 1 4 VDD GND 2 3 OUT No connect (input receiver off) GND Power Electrical and case ground 3 CLK Output Oscillator output 4 VDD Power Power supply voltage Note: 2. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment when the device operates in OE/ST mode. Absolute Maximum Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual performance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings. Min. Max. Unit Storage Temperature Parameter -65 150 C VDD -0.5 4 V Electrostatic Discharge - 2000 V Soldering Temperature (follow standard Pb free soldering guidelines) - 260 C Environmental Compliance Parameter Condition/Test Method Mechanical Shock MIL-STD-883F, Method 2002 Mechanical Vibration MIL-STD-883F, Method 2007 Temperature Cycle JESD22, Method A104 Solderability MIL-STD-883F, Method 2003 Moisture Sensitivity Level MSL1 @ 260C Rev. 1.0 Page 2 of 7 www.sitime.com SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Timing Diagram 90% Vdd, 2.5/2,8/3.3V devices Vdd 95% Vdd, 1.8V devices Vdd Pin 4 Voltage ST Voltage 50% Vdd T_resume T_start CLK Output CLK Output T_start: Time to start from power-off T_resume: Time to resume from ST (ST/OE Mode) (ST Mode Only) Phase Noise Plot Phase Noise, 10M Hz carrier, 3.3V, LVCM OS output, TCXO -100 Phase Noise (dBc/Hz) -110 Integrated random phase jitter (RM S, 12kHz-5M Hz): 0.52ps -120 -130 -140 -150 -160 -170 3 10 Rev. 1.0 4 10 5 10 Frequency O ffset (Hz) Page 3 of 7 6 10 www.sitime.com SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice SoftEdgeTM Option The SoftEdgeTM output is available as a standard option for the SiT500x family of MEMS (VC)TCXOs. It is typically used for EMI reduction similar to that of the clipped sinewave output common to many quartz based TCXOs. In the SoftEdgeTM mode, the slower rise/fall edges of the output waveform reduce the higher clock harmonics in a digital clock signal, minimizing EMI radiation at these harmonics. The table below show the actual rise/fall time in relation to the desired output frequency and the supply voltage with a 10 k / 10pF load. Rail-to-rail swing of the output is maintained for these supported frequencies. Rise/Fall Time for SoftEdgeTM Option Parameter Symbol Min. Typ. Max. Unit Tr, Tf 4.0 6.5 9.5 ns 1-26 MHz, 1.8V, 3.0 and 3.3V, MHz 10k and 10 pF, 20%-80% Vd 2.5 4.0 6.0 ns 1-26 MHz, 2.5V and 2.8V, MHz 10k and 10 pF, 20%-80% Vdd 1.5 3.5 5.0 ns 26-50 MHz, 1.8V, 3.0V and 3.3V, MHz 10k and 10 pF, 20%-80% Vdd 1.5 2.5 4.5 ns 26-50 MHz, 2.5V and 2.8V, MHz 10k and 10 pF, 20%-80% Vdd Rise/Fall Time Condition SoftEdgeTM Waveform Examples and Corresponding Harmonics Reduction Figures below illustrate the harmonic power reduction as the rise/fall times are slowed from the standard squarewave output to that of the SoftEdgeTM output. In general, the 1.8V device shows the lowest harmonics and provides best EMI performance comparing to devices with higher operating voltages. Odd Harmonic Power Comparison for LVCMOS and SoftEdgeTM Outputs, VDD = 3.3V LVCMOS and SoftEdgeTM Outputs, VDD = 3.3V 3.5 20 SoftEdge LVCMOS 3 Harmonic Power (dbm) 2.5 Amplitude (V) SoftEdge LVCMOS 10 2 1.5 1 -10dBm 0 -10 -20 -24.4dbm -30 0.5 0 -40 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 0 2 4 6 8 10 12 14 16 18 20 Harmonic Number Time (ns) LVCMOS and SoftEdge Outputs, VDD = 1.8V SoftEdge LVCMOS 20 Odd Harmonic Power Comparison for LVCMOS and SoftEdge Outputs, VDD = 1.8V SoftEdge LVCMOS Amplitude ( 0.5V/Div ) Harmonic Power (dbm) 10 0 -17 dBm -10 -20 -22 dBm -30 -40 Time ( 20ns/Div ) 0 2 4 6 8 10 12 14 16 18 20 Harmonic Number LVCMOS and SoftEdge Outputs, VDD = 2.5V 20 Odd Harmonic Power Comparison for LVCMOS and SoftEdge Outputs, VDD = 2.5V SoftEdge LVCMOS SoftEdge LVCMOS Amplitude( 0.5V/Div) Harmonic Power (dbm) 10 0 -11 dBm -10 -20 -20 dBm -30 -40 Time (20 ns/Div) Rev. 1.0 0 2 4 6 8 10 12 14 16 18 20 Harmonic Number Page 4 of 7 www.sitime.com SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Dimensions and Patterns Package Size - Dimensions (Unit: mm) [3] Recommended Land Pattern (Unit: mm) [4] 2.7 x 2.4 x 0.75 mm (100% compatible with 2.5 x 2. 0 mm footprint) YXXXX 3.2 x 2.5 x 0.75 mm 3.2 0.05 #3 1.9 0.9 #4 #2 #1 0.9 0.75 0.05 #2 1.2 0.7 YXXXX #1 2.2 2.1 #3 2.5 0.05 #4 1.4 5.0 x 3.2 x 0.75 mm 2.54 5.0 0.05 #2 #1 2.2 1.6 #2 0.75 0.05 #1 #4 1.1 YXXXX #3 0.8 #3 3.2 0.05 #4 2.39 1.15 1.5 7.0 x 5.0 x 0.90 mm 0.90 0.10 2.0 1.1 3.81 2.6 5.0 0.05 YXXXX 5.08 5.08 7.0 0.05 1.4 2.2 Notes: 3. Top marking: Y denotes manufacturing origin and XXXX denotes manufacturing lot number. The value of "Y" will depend on the assembly location of the device. 4. A capacitor of value 0.1 F between Vdd and GND is recommended. Rev. 1.0 Page 5 of 7 www.sitime.com SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Ordering Information The Part No. Guide is for reference only. To customize and build an exact part number, use the SiTime Part Number Generator. SiT5001AC -2E-18VQ-1 9 .200000T Packaging "T": Tape & Reel, 3K reel "Y": Tape & Reel, 1K reel Blank for Bulk Part Family SiT5001 Revision Letter Frequency 1.000000 to 80.000000 MHz "A" is the revision "0" for fixed frequency (Pin1 = "E", "S" or "N" options) Temperature Range "C" Commercial, -20 to 70C "I" Industrial, -40 to 85C Pull Range Options (Pin1 = "V" option only) Output Waveform "Q" for 12.5 ppm "M" for 25 ppm "B" for 50 ppm "-" Default "C" SoftEdgeTM Option[5] Feature Pin (pin 1) Package Size "G" "2" "3" "8" "V" for Voltage Control "E" for Output Enable "S" for Standby "N" for No Connect 2.5 x 2.0 mm 3.2 x 2.5 mm 5.0 x 3.2 mm 7.0 x 5.0 mm Supply Voltage "18" for 1.8 V 5% "25" for 2.5 V 10% "28" for 2.8 V 10% "30" for 3.0 V 10% "33" for 3.3 V 10% Frequency Stability[6] "E" for 5 ppm Notes: 5. SiTime's SoftEdgeTM output waveform with 6 ns rise/fall time reduces EMI and is similar to clipped sine wave in functionality. 6. Contact SiTime for tighter stability options. Rev. 1.0 Page 6 of 7 www.sitime.com SiT5001 1-80 MHz MEMS TCXO and VCTCXO The Smart Timing Choice The Smart Timing Choice Additional Information Description Download Link Manufacturing Notes Document Tape & Reel dimension, reflow profile and other manufacturing related info http://www.sitime.com/component/docman/doc_download/85-manufacturing-notes-for-sitime-oscillators Qualification Reports RoHS report, reliability reports, composition reports http://www.sitime.com/support/quality-and-reliability Performance Reports Additional performance data such as phase noise, current consumption and jitter for selected frequencies http://www.sitime.com/support/performance-measurement-report Termination Techniques Termination design recommendations http://www.sitime.com/support/application-notes Layout Techniques Layout recommendations http://www.sitime.com/support/application-notes Revision History Version Release Date 1.0 11/12/15 Change Summary Final production release * Revised initial tolerance, stability over temperature and first/10 year aging values in the electrical characteristics table * Revised frequency stability option (c) SiTime Corporation 2015. The information contained herein is subject to change at any time without notice. SiTime assumes no responsibility or liability for any loss, damage or defect of a Product which is caused in whole or in part by (i) use of any circuitry other than circuitry embodied in a SiTime product, (ii) misuse or abuse including static discharge, neglect or accident, (iii) unauthorized modification or repairs which have been soldered or altered during assembly and are not capable of being tested by SiTime under its normal test conditions, or (iv) improper installation, storage, handling, warehousing or transportation, or (v) being subjected to unusual physical, thermal, or electrical stress. Disclaimer: SiTime makes no warranty of any kind, express or implied, with regard to this material, and specifically disclaims any and all express or implied warranties, either in fact or by operation of law, statutory or otherwise, including the implied warranties of merchantability and fitness for use or a particular purpose, and any implied warranty arising from course of dealing or usage of trade, as well as any common-law duties relating to accuracy or lack of negligence, with respect to this material, any SiTime product and any product documentation. Products sold by SiTime are not suitable or intended to be used in a life support application or component, to operate nuclear facilities, or in other mission critical applications where human life may be involved or at stake. All sales are made conditioned upon compliance with the critical uses policy set forth below. CRITICAL USE EXCLUSION POLICY BUYER AGREES NOT TO USE SITIME'S PRODUCTS FOR ANY APPLICATION OR IN ANY COMPONENTS USED IN LIFE SUPPORT DEVICES OR TO OPERATE NUCLEAR FACILITIES OR FOR USE IN OTHER MISSION-CRITICAL APPLICATIONS OR COMPONENTS WHERE HUMAN LIFE OR PROPERTY MAY BE AT STAKE. SiTime owns all rights, title and interest to the intellectual property related to SiTime's products, including any software, firmware, copyright, patent, or trademark. The sale of SiTime products does not convey or imply any license under patent or other rights. SiTime retains the copyright and trademark rights in all documents, catalogs and plans supplied pursuant to or ancillary to the sale of products or services by SiTime. Unless otherwise agreed to in writing by SiTime, any reproduction, modification, translation, compilation, or representation of this material shall be strictly prohibited. Rev. 1.0 Page 7 of 7 www.sitime.com The Smart Timing Choice The Smart Timing Choice Supplemental Information The Supplemental Information section is not part of the datasheet and is for informational purposes only. SiTime Corporation 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com The Smart Timing Choice The Smart Timing Choice Silicon MEMS Outperforms Quartz SiTime Corporation Silicon MEMS Outperforms Quartz Rev. 1.2 990 Almanor Avenue, Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com Revised November 13, 2015 Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Reliability Best Electro Magnetic Susceptibility (EMS) Silicon is inherently more reliable than quartz. Unlike quartz suppliers, SiTime has in-house MEMS and analog CMOS expertise, which allows SiTime to develop the most reliable products. Figure 1 shows a comparison with quartz technology. SiTime's oscillators in plastic packages are up to 54 times more immune to external electromagnetic fields than quartz oscillators as shown in Figure 3. Why is SiTime Best in Class: * SiTime's MEMS resonators are vacuum sealed using an advanced EpiSealTM process, which eliminates foreign particles and improves long term aging and reliability * World-class MEMS and CMOS design expertise Why is SiTime Best in Class: * Internal differential architecture for best common mode noise rejection * Electrostatically driven MEMS resonator is more immune to EMS SiTime vs Quartz Electro Magnetic Susceptibility (EMS) Reliability (Million Hours) - 30 IDT Epson 1,140 38 28 Average Spurs (dB) - 39 SiTime - 40 - 40 - 42 - 43 - 45 - 50 - 60 SiTime 54X Better - 70 - 73 - 80 - 90 Kyocera Figure 1. Reliability Comparison[1] Epson TXC CW SiLabs SiTime Figure 3. Electro Magnetic Susceptibility (EMS)[3] Best Aging Best Power Supply Noise Rejection Unlike quartz, MEMS oscillators have excellent long term aging performance which is why every new SiTime product specifies 10-year aging. A comparison is shown in Figure 2. SiTime's MEMS oscillators are more resilient against noise on the power supply. A comparison is shown in Figure 4. * SiTime's MEMS resonators are vacuum sealed using an advanced EpiSeal process, which eliminates foreign particles and improves long term aging and reliability * Inherently better immunity of electrostatically driven MEMS resonator SiTime MEMS vs. Quartz Aging 10 SiTime MEMS Oscillator Quartz Oscillator 8.0 Aging (PPM) 8 SiTime 2X Better 6 4 2 0 3.0 3.5 1.5 1-Year 10-Year Figure 2. Aging Comparison[2] Silicon MEMS Outperforms Quartz Rev. 1.2 Why is SiTime Best in Class: * On-chip regulators and internal differential architecture for common mode noise rejection * Best analog CMOS design expertise Additive Integrated Phase Jitter per mVp-p Injected Noise (ps/mv) Why is SiTime Best in Class: Power Supply Noise Rejection SiTIme 5.0 NDK Epson Kyocera 4.0 3.0 2.0 SiTime SiTime 3X Better 1.0 0.0 10 100 1,000 Power Supply Noise Frequency (kHz) 10,000 Figure 4. Power Supply Noise Rejection[4] www.sitime.com Silicon MEMS Outperforms Quartz The Smart Timing Choice The Smart Timing Choice Best Vibration Robustness Best Shock Robustness High-vibration environments are all around us. All electronics, from handheld devices to enterprise servers and storage systems are subject to vibration. Figure 5 shows a comparison of vibration robustness. SiTime's oscillators can withstand at least 50,000 g shock. They all maintain their electrical performance in operation during shock events. A comparison with quartz devices is shown in Figure 6. Why is SiTime Best in Class: Why is SiTime Best in Class: * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design * The moving mass of SiTime's MEMS resonators is up to 3000 times smaller than quartz * Center-anchored MEMS resonator is the most robust design Vibration Sensitivity (ppb/g) TXC Epson Connor Winfield Kyocera SiLabs 100.00 10.00 1.00 SiTime Up to 30x Better 0.10 10 100 Vibration Frequency (Hz) Figure 5. Vibration Robustness[5] 1000 Peak Frequency Deviation (PPM) Vibration Sensitivity vs. Frequency SiTime 16 14 Differential XO Shock Robustness - 500 g 14.3 12.6 12 10 8 SiTime Up to 25x Better 6 3.9 4 2.9 2.5 2 0.6 0 Kyocera Epson TXC CW SiLabs SiTime Figure 6. Shock Robustness[6] Notes: 1. Data Source: Reliability documents of named companies. 2. Data source: SiTime and quartz oscillator devices datasheets. 3. Test conditions for Electro Magnetic Susceptibility (EMS): * According to IEC EN61000-4.3 (Electromagnetic compatibility standard) * Field strength: 3V/m * Radiated signal modulation: AM 1 kHz at 80% depth * Carrier frequency scan: 80 MHz - 1 GHz in 1% steps * Antenna polarization: Vertical * DUT position: Center aligned to antenna Devices used in this test: SiTime, SiT9120AC-1D2-33E156.250000 - MEMS based - 156.25 MHz Epson, EG-2102CA 156.2500M-PHPAL3 - SAW based - 156.25 MHz TXC, BB-156.250MBE-T - 3rd Overtone quartz based - 156.25 MHz Kyocera, KC7050T156.250P30E00 - SAW based - 156.25 MHz Connor Winfield (CW), P123-156.25M - 3rd overtone quartz based - 156.25 MHz SiLabs, Si590AB-BDG - 3rd overtone quartz based - 156.25 MHz 4. 50 mV pk-pk Sinusoidal voltage. Devices used in this test: SiTime, SiT8208AI-33-33E-25.000000, MEMS based - 25 MHz NDK, NZ2523SB-25.6M - quartz based - 25.6 MHz Kyocera, KC2016B25M0C1GE00 - quartz based - 25 MHz Epson, SG-310SCF-25M0-MB3 - quartz based - 25 MHz 5. Devices used in this test: same as EMS test stated in Note 3. 6. Test conditions for shock test: * MIL-STD-883F Method 2002 * Condition A: half sine wave shock pulse, 500-g, 1ms * Continuous frequency measurement in 100 s gate time for 10 seconds Devices used in this test: same as EMS test stated in Note 3 7. Additional data, including setup and detailed results, is available upon request to qualified customers. Please contact productsupport@sitime.com. Silicon MEMS Outperforms Quartz Rev. 1.2 www.sitime.com Document Feedback Form The Smart Timing Choice The Smart Timing Choice SiTime values your input in improving our documentation. Click here for our online feedback form or fill out and email the form below to productsupport@sitime.com. 1. Does the Electrical Characteristics table provide complete information? Yes No If No, what parameters are missing? _________________________________________________________________________________________________ 2. Is the organization of this document easy to follow? Yes No If "No," please suggest improvements that we can make: _________________________________________________________________________________________________ 3. Is there any application specific information that you would like to see in this document? (Check all that apply) EMI Termination recommendations Shock and vibration performance Other If "Other," please specify: _________________________________________________________________________________________________ 4. Are there any errors in this document? Yes No If "Yes", please specify (what and where): _________________________________________________________________________________________________ 5. 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