Vishay General Semiconductor
BYD33DGP thru BYD33MGP
New Product
Document Number 88914
26-Apr-06
www.vishay.com
1
Patented*
DO-204AL (DO-41)
®
* Glass-plastic encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
by Patent No. 3,930,306
Avalanche Glass Passivated Junction Fast Switching Rectifier
FEATURES
• Cavity-free glass-passivated junction
• Avalanche surge capability guaranteed
• Fast reverse recovery time
• Low switching losses, high efficiency
• Low leakage current, typical IR less than 0.1 µA
• High forward surge capability
• Meets environmental standard MIL-S-19500
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification of switching
power supplies, inverters, converters and free-
wheeling applications for consumer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAJOR RATINGS AND CHARACTERISTICS
IF(AV) 1.0 A
VRRM 200 V to 1000 V
IFSM 30 A
ERSM 10 mJ, 7 mJ
trr 150 ns, 250 ns, 300 ns
IR5.0 µA
Tj max. 175 °C
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP UNIT
Device marking code 33DGP 33GGP 33JGP 33KGP 33MGP V
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 1000 V
Maximum DC blocking voltage VDC 200 400 600 800 1000 V
Maximum average forward rectified current
0.375 " (9.5 mm) lead length at TA = 55 °C IF(AV) 1.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 30 A
Non-repetitive peak reverse avalanche
energy at L = 120 mH,
Tj = Tj max. prior to surge
D-J
K-M ERSM 10
7 mJ
Maximum full load reverse current, full cycle
average 0.375" (9.5 mm) lead length TA = 55 °C IR(AV) 100 µA
Operating junction and storage temperature range TJ,TSTG - 65 to + 175 °C
www.vishay.com
2
Document Number 88914
26-Apr-06
Vishay General Semiconductor
BYD33DGP thru BYD33MGP
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
Note:
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, P.C.B. mounted
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP UNIT
Maximum
instantaneous
forward voltage (1)
at 1.0 A VF 1.3 V
Maximum DC reverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 150 °C IR
5.0
200 µA
Maximum reverse
recovery time
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 150 250 300 ns
Typical junction
capacitance at 4.0 V, 1 MHz CJ 15 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL BYD33DGP BYD33GGP BYD33JGP BYD33KGP BYD33MGP UNIT
Typical thermal resistance (1) RθJA 55 °C/W
ORDERING INFORMATION
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
BYD33JGP-E3/54 0.336 54 5500 13" Diameter Paper Tape & Reel
BYD33JGP-E3/73 0.336 73 3000 Ammo Pack Packaging
Figure 1. Forward Current Derating Curve
Ambient Temperature (°C)
Average Forward Rectified Current (A)
25 50 75 100 125 150 175
0
0.25
0.5
0.75
1.0
ResistiveorInductiveLoad
0.375" (9.5 mm) Lead Length
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Number of Cycles at 60 Hz
Forward Surge Current (A)
110 100
0
10
20
30
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
Document Number 88914
26-Apr-06
www.vishay.com
3
BYD33DGP thru BYD33MGP
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 4. Typical Reverse Characteristics
InstantaneousForward Voltage (V)
InstantaneousForward Current (A)
0.4 0.6 0.81.0 1.2 1.4 1.6
0.01
0.1
1
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
Percent of Rated Peak Reverse Voltage (%)
InstantaneousReverse Current (µA)
020 40 60 80100
0.01
0.1
1
10
20
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Figure 5. Typical Junction Capacitance
Figure 6. Typical Transient Thermal Impedance
Reverse Voltage (V)
Junction Capacitance (pF)
110 100
1
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.01 0.1 110 100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028(0.71)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
DIA.
DO-204AL (DO-41)
Legal Disclaimer Notice
Vishay
Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
