CREAT BY ART
- Glass passivated chip junction
- Ideal for automated placement
- Low forward voltage drop
- High surge current capability
- Halogen-free according to IEC 61249-2-21 definition
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
with prefix "H" on packing code meet JESD 201 class 2 whisker test
V
RRM
50 100 200 400 600 800 1000 V
V
RMS
35 70 140 280 420 560 700 V
V
DC
50 100 200 400 600 800 1000 V
I
F(AV)
A
Trr μs
Cj pF
T
JO
C
T
STG O
C
Document Number: DS_D1405026 Version: M14
S1A thru S1M
Surface Mount Rectifiers
FEATURES
- Moisture sensitivity level: level 1, per J-STD-020
S1K
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
MECHANICAL DATA
Case: DO-214AC (SMA) DO-214AC (SMA)
Polarity: Indicated by cathode band
Weight: 0.06 g (approximately)
Maximum average forward rectified current 1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T
A
=25℃ unless otherwise noted)
PARAMETER SYMBOL S1A S1B S1D S1G S1J
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load I
FSM
A
Maximum instantaneous forward voltage (Note 1)
@ 1 A V
F
S1M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Typical reverse recovery time (Note 2) 1.5
Typical thermal resistance R
θJL
R
θJA
E
RSM
5
Typical junction capacitance (Note 3) 12
Non-repetitive peak reverse avalanche
energy at 25℃, I
AS
=1A, L=10mH
O
C/W
Operating junction temperature range
Storage temperature range - 55 to +175
Taiwan Semiconductor
40 30
1.1
1
50
V
Maximum reverse current @ rated VR T
J
=25 ℃
T
J
=125 ℃I
R
μA
mJ
27
75
30
85
- 55 to +175
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Note 1: Pulse test with PW=300μs, 1% duty cycle
PART NO.
PART NO.
S1M
S1M
S1M
(TA=25℃ unless otherwise noted)
Document Number: DS_D1405026 Version: M14
S1A thru S1M
ORDERING INFORMATION
AEC-Q101
QUALIFIED
PACKING COD E GREEN COMPOUND
CODE
PACKAGE PACKING
Taiwan Semiconductor
S1x
(Note 1)
Prefix "H"
R3
Suffix "G"
SMA 1,800 / 7" Plastic reel
R2 SMA 7,500 / 13" Paper reel
M2 SMA 7,500 / 13" Plastic reel
F3 Folded SMA 1,800 / 7" Plastic reel
F2 Folded SMA 7,500 / 13" Paper reel
F4 Folded SMA 7,500 / 13" Plastic reel
N/A E3 Clip SMA 1,800 / 7" Plastic reel
E2 Clip SMA 7,500 / 13" Plastic reel
Note 1: "x" defines voltage from 50V (S1A) to 1000V (S1M)
EXAMPLE
PREFERRED P/N AEC-Q101
QUALIFIED PACKING CODE GREEN COMPOUND
CODE DESCRIPTION
S1M R3 R3
S1M R3G R3 G Green compound
S1MHR3 H R3 AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
0
0.2
0.4
0.6
0.8
1
1.2
0 255075100125150175
AVERAGE FORWARD CURRENT (A)
LEAD TEMPERATURE (oC)
FIG.1 FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
1
10
100
1 10 100
PEAK FORWARD SURGE URRENT
(A)
NUMBER OF CYCLES AT 60 Hz
FIG. 3 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
JEDEC Method
S1A-S1K
S1M
0.001
0.01
0.1
1
10
100
0 20 40 60 80 100 120 140
INSTANTANEOUS REVERSE CURRENT
(μA)
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG. 2 TYPICAL REVERSE CHARACTERISTICS
TJ=25℃
TJ=125℃
TJ=75℃
0.1
1
10
100
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD CURRENT
(A)
FORWARD VOLTAGE (V)
FIG. 4 TYPICAL FORWARD CHARACTERISTICS
Pulse Width=300μs
1% Duty Cycle
Min Max Min Max
A 1.27 1.58 0.050 0.062
B 4.06 4.60 0.160 0.181
C 2.29 2.83 0.090 0.111
D 1.99 2.50 0.078 0.098
E 0.90 1.41 0.035 0.056
F 4.95 5.33 0.195 0.210
G 0.10 0.20 0.004 0.008
H 0.15 0.31 0.006 0.012
P/N = Specific Device Code
G = Green Compound
YW = Date Code
F = Factory Code
Document Number: DS_D1405026 Version: M14
S1A thru S1M
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DIM. Unit (mm) Unit (inch)
SUGG ESTED PAD LAYO UT
Symbol Unit (mm) Unit (inch)
A 1.68 0.066
B 1.52 0.060
C 3.93 0.155
MARKING DIAGRAM
D 2.41 0.095
E 5.45 0.215
1
10
100
0.01 0.1 1 10 100
CAPACITANCE (pF)
REVERSE VOLTAGE (V)
FIG. 5 TYPICAL JUNCTION CAPACITANCE
f=1.0MHz
Vsig=50mVp-p
CREAT BY ART
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1405026 Version: M14
S1A thru S1M
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
