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Page <2> V1.029/11/12
Bipolar Transistor
Absolute Maximum Ratings (Ta = 25°C unless specied otherwise)
Description Symbol Value Unit
Collector Emitter Voltage Vceo 45 V
Collector Emitter Voltage Vces 50
Emitter Base Voltage Vebo 5
Collector Current Continuous Ic800 mA
Collector Current Peak Icm 1000
Base Current Peak Ibm 200
Base Current Continuous Ib100
Base Current Peak Ibm 200
Power Dissipation at Ta = 25°C
Derate Above 25°C Pd625
5
mW
mW/°C
Operating and Storage Junction Temperature Range Tj, Tstg -65 to +150 °C
Thermal Resistance
Junction to Ambient in Free Air Rth (j-a) 200 °C/W
Electrical Characteristics (Ta = 25°C unless specied otherwise)
Description Symbol Test Condition Minimum Maximum Unit
Collector Emiiter Voltage Vceo Ic = 1mA, Ir = 0 45 -
VCollector Emiiter Voltage Vces Ic = 100µA, Ie = 0 50 -
Emitter Base Voltage Vebo Ie = 10µA, Ic = 0 5.0 -
Collector Cut off Current Icbo Vcb = 20V, Ie = 0
Vcb = 20V, Ie = 0, Tj = 150°C -100
5
nA
µA
Emitter Cut off Current Iebo Veb = 5V, Ic = 0 - 10 µA
Collector Emitter Saturation Voltage *Vce (sat) Ic = 500mA, Ib = 50mA - 0.7
V
Base Emitter On Voltage *Vbe (on) Ic = 500mA, Vce = 1V - 1.2
*Pulse Test: Pulse Width ≤300ms, Duty Cycle ≤2%.