2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits BVDSS RDS(ON) Max ID Max TA = +25C 60V 7.5 @ VGS = 5V 0.23A * * * * * * * * * * * * Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. "Green" Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found at https://www.diodes.com/products/automotive/automotiveproducts/. This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability. https://www.diodes.com/quality/product-definitions/ An Automotive-Compliant Part is Available Under Separate Datasheet (2N7002DWQ) Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. * * * * * * Motor Control Power Management Functions * * SOT363 Top View Case: SOT363 Case Material: Molded Plastic. "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Lead-Frame (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) D2 G1 S1 S2 G2 D1 Top View Internal Schematic Ordering Information (Note 4) Part Number 2N7002DW-7-F 2N7002DW-13-F Notes: Case SOT363 SOT363 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. 2N7002DW Document number: DS30120 Rev. 20 - 2 1 of 6 www.diodes.com December 2020 (c) Diodes Incorporated 2N7002DW Marking Information YM Month Code YM K72 Date Code Key Year 1998 Code J K72 ... ... Jan 1 2020 H Feb 2 K72 = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: H = 2020) M or M= Month (ex: 9 = September) 2021 I Mar 3 2022 J Apr 4 2023 K May 5 2024 L Jun 6 2025 M Jul 7 2026 N Aug 8 2027 O Sep 9 2028 P 2029 R 2030 S Oct O Nov N Dec D Maximum Ratings (@ TA = +25C, unless otherwise specified.) Symbol Value Unit Drain-Source Voltage Characteristic VDSS 60 V Drain-Gate Voltage RGS 1.0M VDGR 60 V Continuous VGSS 20 V Pulsed VGSS 40 V ID 0.23 0.18 0.14 A IS 0.23 A IDM 0.8 A Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 5V Steady State TA = +25C TA = +70C TA = +100C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) Thermal Characteristics (@ TA = +25C, unless otherwise specified.) Characteristic Symbol Value Total Power Dissipation (Note 5) TA = +70C 0.2 PD Steady State 410 RJA TA = +70C C/W 0.4 TA = +25C Total Power Dissipation (Note 6) W 0.12 TA = +100C Thermal Resistance, Junction to Ambient (Note 5) Unit 0.31 TA = +25C 0.25 PD W 0.15 TA = +100C Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 318 C/W Thermal Resistance, Junction to Case (Note 6) Steady State RJC 135 C/W TJ, TSTG -55 to +150 C Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 2N7002DW Document number: DS30120 Rev. 20 - 2 2 of 6 www.diodes.com December 2020 (c) Diodes Incorporated 2N7002DW Electrical Characteristics (@ TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit BVDSS 60 70 V VGS = 0V, ID = 10A IDSS 1.0 500 A VDS = 60V, VGS = 0V IGSS 10 nA VGS = 20V, VDS = 0V VGS(TH) 1.0 2.0 V VDS = VGS, ID = 250A RDS(ON) 3.2 4.4 7.5 13.5 ID(ON) 0.5 1.0 A Forward Transconductance gFS 80 mS Diode Forward Voltage VSD 0.78 1.5 V Input Capacitance Ciss 22 50 pF Output Capacitance Coss 11 25 pF Reverse Transfer Capacitance pF Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current @ TC = +25C @ TC = +125C Gate-Body Leakage Test Condition ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance @ TJ = +25C @ TJ = +125C On-State Drain Current VGS = 5.0V, ID = 0.05A VGS = 10V, ID = 0.5A VGS = 10V, VDS = 7.5V VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA DYNAMIC CHARACTERISTICS (Note 8) Crss 2.0 5.0 Turn-On Delay Time tD(ON) 7.0 20 Turn-Off Delay Time tD(OFF) 11.0 20 Notes: ns VDS = 25V, VGS = 0V f = 1.0MHz VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2N7002DW Document number: DS30120 Rev. 20 - 2 3 of 6 www.diodes.com December 2020 (c) Diodes Incorporated 2N7002DW 7 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 1.0 0.8 0.6 0.4 0.2 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 On-Region Characteristics 0 5 4 3 2 1 0.4 0.6 0.8 ID, DRAIN CURRENT (A) Figure 2 On-Resistance vs. Drain Current 0.2 1.0 6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.0 1.5 VGS = 5.0V, ID = 0.05A 1.0 0.5 0 -55 -30 -5 20 45 70 95 120 145 TJ, JUNCTION TEMPERATURE ( C) Figure 3 On-Resistance vs. Junction Temperature 1 ID, DRAIN CURRENT (A) 6 0 0 5 TJ = 25C 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4 On-Resistance vs. Gate-Source Voltage RDS(on) Limited DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms 0.01 PW = 100s 100s TJ(max) = 150C 150C TA = 25C 25C Single Pulse 0.001 0.1 2N7002DW 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 5 SOA, Safe Operation Area Document number: DS30120 Rev. 20 - 2 100 4 of 6 www.diodes.com December 2020 (c) Diodes Incorporated 2N7002DW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 0.95 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0 8 -All Dimensions in mm b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions G Y1 Y C G X Y Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 X 2N7002DW Document number: DS30120 Rev. 20 - 2 5 of 6 www.diodes.com December 2020 (c) Diodes Incorporated 2N7002DW IMPORTANT NOTICE 1. DIODES INCORPORATED AND ITS SUBSIDIARIES ("DIODES") MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 2. 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