BBY51... Silicon Tuning Diode High Q hyperabrupt tuning diode Designed for low tuning voltage operation For VCO's in mobile communications equipment BBY51 BBY51-02L BBY51-02W BBY51-03W 3 D 2 D 1 1 1 2 2 Type BBY51 BBY51-02L* BBY51-02W BBY51-03W Package SOT23 TSLP-2-1 SCD80 SOD323 Configuration common cathode single, leadless single single LS(nH) 2 0.4 0.6 1.8 Marking S3s II II H * Preliminary Maximum Ratings at TA = 25C, unless otherwise specified Parameter Symbol Diode reverse voltage VR 7 V Forward current IF 20 mA Operating temperature range Top -55 ... 125 C Storage temperature Tstg -55 ... 150 1 Value Unit Jun-16-2003 BBY51... Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. DC Characteristics Reverse current IR nA VR = 6 V - - 10 VR = 6 V, TA = 85 C - - 200 AC Characteristics Diode capacitance pF CT VR = 1 V, f = 1 MHz 4.5 5.3 6.1 VR = 2 V, f = 1 MHz 3.4 4.2 5.2 VR = 3 V, f = 1 MHz 2.7 3.5 4.6 VR = 4 V, f = 1 MHz 2.5 3.1 3.7 CT1 /CT4 1.55 1.75 2.2 C1V -C3V 1.4 1.78 2.2 C3V -C4V 0.3 0.5 0.7 - 0.37 - Capacitance ratio VR = 1 V, VR = 4 V, f = 1 MHz Capacitance difference pF VR = 1 V, f = 1 MHz, VR = 4 V Capacitance difference VR = 3 V, f = 1 MHz, VR = 4 V Series resistance rS VR = 1 V, f = 1 GHz 2 Jun-16-2003 BBY51... Diode capacitance CT = (VR) Temperatur coefficient TCC = (VR ) f = 1MHz EHD07128 10 CT pF EHD07129 10 4 ppa TCC C 8 10 3 6 4 10 2 2 0 0 2 4 V VR 10 1 0 10 6 3 5 10 1 V VR 10 2 Jun-16-2003