Semiconductor Components Industries, LLC, 2002
June, 2002 – Rev. 2 1Publication Order Number:
1N6373/D
1N6373 - 1N6381 Series
(ICTE-5 - ICTE-36,
MPTE-5 - MPTE-45)
1500 Watt Peak Power
Mosorb Zener Transient
Voltage Suppressors
Unidirectional*
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
•Working Peak Reverse Voltage Range – 5 V to 45 V
•Peak Power – 1500 Watts @ 1 ms
•ESD Rating of Class 3 (>16 KV) per Human Body Model
•Maximum Clamp Voltage @ Peak Pulse Current
•Low Leakage < 5 A Above 10 V
•Response Time is Typically < 1 ns
Mechanical Characteristics:
CASE: Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1.)
@ TL ≤ 25°CPPK 1500 Watts
Steady State Power Dissipation
@ TL ≤ 75°C, Lead Length = 3/8″
Derated above TL = 75°C
PD5.0
20
Watts
mW/°C
Thermal Resistance, Junction–to–Lead RJL 20 °C/W
Forward Surge Current (Note 2.)
@ TA = 25°CIFSM 200 Amps
Operating and Storage
Temperature Range TJ, Tstg – 65 to
+175 °C
*Please see 1N6382 – 1N6389 (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
for Bidirectional Devices
AXIAL LEAD
CASE 41A
PLASTIC
L = Assembly Location
MPTE–xx = ON Device Code
ICTE–xx = ON Device Code
1N63xx = JEDEC Device Code
YY = Year
WW = Work Week
Cathode Anode
Device Package Shipping
ORDERING INFORMATION
MPTE–xx Axial Lead 500 Units/Box
MPTE–xxRL4 Axial Lead 1500/Tape & Reel
ICTE–xx Axial Lead 500 Units/Box
ICTE–xxRL4 Axial Lead 1500/Tape & Reel
NOTES:
L
ICTE
–xx
YYWW
1N63xx Axial Lead 500 Units/Box
1N63xxRL4* Axial Lead 1500/Tape & Reel
L
MPTE
–xx
1N
63xx
YYWW
1. Nonrepetitive current pulse per Figure 5 and der-
ated above TA = 25°C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW =
8.3 ms, duty cycle = 4 pulses per minute maxi-
mum.
http://onsemi.com
*1N6378 Not Available in 1500/Tape & Reel
Uni–Directional TVS
IPP
IF
V
I
IR
IT
VRWM
VCVBR VF
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
Symbol Parameter
IPP Maximum Reverse Peak Pulse Current
VCClamping Voltage @ IPP
VRWM Working Peak Reverse Voltage
IRMaximum Reverse Leakage Current @ VRWM
VBR Breakdown Voltage @ IT
ITTest Current
VBR Maximum Temperature Variation of VBR
IFForward Current
VFForward Voltage @ IF
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 3.5 V Max. @ IF (Note 3.) = 100 A)
VRWM
IR@
Breakdown Voltage VC @ IPP (Note 6.) VC (Volts) (Note 6.)
JEDEC
Device
Device
V
RWM
(Note 4.)
I
R
@
VRWM VBR (Note 5.) (Volts) @ ITVCIPP
@I
PP =
@I
PP =
VBR
D
ev
i
ce
(ON Device)
D
ev
i
ce
Marking (Volts) (A) Min Nom Max (mA) (Volts) (A)
@
I
PP =
1 A
@
I
PP =
10 A (mV/°C)
1N6373
(MPTE–5) 1N6373
MPTE–5 5.0 300 6.0 – – 1.0 9.4 160 7.1 7.5 4.0
1N6374
(MPTE–8) 1N6374
MPTE–8 8.0 25 9.4 – – 1.0 15 100 11.3 11.5 8.0
1N6375
(MPTE–10) 1N6375
MPTE–10 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 12
1N6376
(MPTE–12) 1N6376
MPTE–12 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 14
1N6377
(MPTE–15) 1N6377
MPTE–15 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 18
1N6378*
(MPTE–18) 1N6378*
MPTE–18 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 21
1N6379
(MPTE–22) 1N6379
MPTE–22 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 26
1N6380
(MPTE–36) 1N6380
MPTE–36 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 50
1N6381
(MPTE–45) 1N6381
MPTE–45 45 2.0 52.9 – – 1.0 78.9 19 63.3 70 60
ICTE–5 ICTE–5 5.0 300 6.0 – – 1.0 9.4 160 7.1 7.5 4.0
ICTE–10 ICTE–10 10 2.0 11.7 – – 1.0 16.7 90 13.7 14.1 8.0
ICTE–12 ICTE–12 12 2.0 14.1 – – 1.0 21.2 70 16.1 16.5 12
ICTE–15 ICTE–15 15 2.0 17.6 – – 1.0 25 60 20.1 20.6 14
ICTE–18 ICTE–18 18 2.0 21.2 – – 1.0 30 50 24.2 25.2 18
ICTE–22 ICTE–22 22 2.0 25.9 – – 1.0 37.5 40 29.8 32 21
ICTE–36 ICTE–36 36 2.0 42.4 – – 1.0 65.2 23 50.6 54.3 26
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
5. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
http://onsemi.com
3
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0 25 50 75 100 125 150 175 200
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT @ T
A= 25 C°
TA, AMBIENT TEMPERATURE (°C)
Figure 2. Pulse Derating Curve
5
4
3
2
1
25 50 75 100 125 150 175 200
PD, STEADY STATE POWER DISSIPATION (WATTS)
TL, LEAD TEMPERATURE (°C)
3/8″
3/8″
0
0
100
50
001 2 3 4
t, TIME (ms)
, VALUE (%)
tr ≤ 10 s
tP
PEAK VALUE - IPP
HALF VALUE - IPP
2
PULSE WIDTH (tP) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF IPP
.
1s 10s 100s 1 ms 10 ms
100
10
1
tP
, PULSE WIDTH
PPK, PEAK POWER (kW)
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1s
IPP
Figure 3. Capacitance versus Breakdown Voltage
Figure 4. Steady State Power Derating Figure 5. Pulse Waveform
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
VBR, BREAKDOWN VOLTAGE (VOLTS)
1 10 100 1000
10,000
1000
100
10
C, CAPACITANCE (pF)
MEASURED @
ZERO BIAS
MEASURED @ VRWM
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
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4
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
1.5KE6.8CA
through
1.5KE200CA
Figure 6. Dynamic Impedance
1000
500
200
100
50
20
10
5
2
1
1000
500
200
100
50
20
10
5
2
1
0.3 0.5 0.7 1 2 3 5 7 10 20 30
VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
0.3 0.5 0.7 1 2 3 5 7 10 20 30
VBR, INSTANTANEOUS INCREASE IN VBR ABOVE VBR(NOM) (VOLTS)
IT, TEST CURRENT (AMPS)
VBR(MIN)=6.0 to 11.7V
TL=25°C
tP=10s
VBR(NOM)=6.8 to 13V
20V
24V 43V
75V
180V
120V
19V
21.2V 42.4V
Figure 7. Typical Derating Factor for Duty Cycle
DERATING FACTOR
1 ms
10 s
1
0.7
0.5
0.3
0.05
0.1
0.2
0.01
0.02
0.03
0.07
100 s
0.1 0.2 0.5 2 5 10 501 20 100
D, DUTY CYCLE (%)
PULSE WIDTH
10 ms
TL=25°C
tP=10s
IT, TEST CURRENT (AMPS)
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
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5
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is
placed in parallel with the equipment or component to be
protected. In this situation, there is a time delay associated
with the capacitance of the device and an overshoot
condition associated with the inductance of the device and
the inductance of the connection method. The capacitance
effect is of minor importance in the parallel protection
scheme because it only produces a time delay in the
transition from the operating voltage to the clamp voltage as
shown in Figure 8.
The inductive effects in the device are due to actual
turn-on time (time required for the device to go from zero
current to full current) and lead inductance. This inductive
effect produces an overshoot in the voltage across the
equipment or component being protected as shown in
Figure 9. Minimizing this overshoot is very important in the
application, since the main purpose for adding a transient
suppressor is to clamp voltage spikes. These devices have
excellent response time, typically in the picosecond range
and negligible inductance. However, external inductive
effects could produce unacceptable overshoot. Proper
circuit layout, minimum lead lengths and placing the
suppressor device as close as possible to the equipment or
components to be protected will minimize this overshoot.
Some input impedance represented by Zin is essential to
prevent overstress of the protection device. This impedance
should be as high as possible, without restricting the circuit
operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions
and at a lead temperature of 25°C. If the duty cycle increases,
the peak power must be reduced as indicated by the curves
of Figure 7. Average power must be derated as the lead or
ambient temperature rises above 25°C. The average power
derating curve normally given on data sheets may be
normalized and used for this purpose.
At first glance the derating curves of Figure 7 appear to b e
in error as the 10 ms pulse has a higher derating factor than
the 10 s pulse. However, when the derating factor for a
given pulse of Figure 7 is multiplied by the peak power value
of Figure 1 for the same pulse, the results follow the
expected trend.
TYPICAL PROTECTION CIRCUIT
Vin
VL
V
Vin
Vin (TRANSIENT)
VL
td
V
VL
Vin (TRANSIENT)
Zin
LOAD
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
tD = TIME DELAY DUE TO CAPACITIVE EFFECT
tt
Figure 8. Figure 9.
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
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6
OUTLINE DIMENSIONS
1500 Watt Mosorb
Transient Voltage Suppressors – Axial Leaded
MOSORB
CASE 41A–04
ISSUE D
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.335 0.374 8.50 9.50
INCHES
B0.189 0.209 4.80 5.30
D0.038 0.042 0.96 1.06
K1.000 --- 25.40 ---
P--- 0.050 --- 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. LEAD FINISH AND DIAMETER UNCONTROLLED
IN DIMENSION P.
4. 041A-01 THRU 041A-03 OBSOLETE, NEW
STANDARD 041A-04.
D
K
P
PA
K
B
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
http://onsemi.com
7
Notes
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
http://onsemi.com
8
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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
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For additional information, please contact your local
Sales Representative.
1N6373/D
Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC.
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